BSC094N06LS5 [INFINEON]
英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低,降低开关损耗,而不影响导通损耗。改进品质因数,支持在高开关频率下运行。此外,逻辑电平驱动提供低栅极阈值电压 (V GS(th)),使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。;型号: | BSC094N06LS5 |
厂家: | Infineon |
描述: | 英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低,降低开关损耗,而不影响导通损耗。改进品质因数,支持在高开关频率下运行。此外,逻辑电平驱动提供低栅极阈值电压 (V GS(th)),使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。 开关 无线 栅 驱动 控制器 电信 微控制器 栅极 |
文件: | 总13页 (文件大小:1442K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSC094N06LS5
MOSFET
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 5-8
Parameter
Value
Unit
VDS
60
V
*1
Gate
Pin 4
RDS(on),max
ID
9.4
47
mΩ
A
Source
Pin 1-3
*1: Internal body diode
QOSS
13
nC
nC
QG(0V..4.5V)
7
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
094N06LS
RelatedꢀLinks
BSC094N06LS5
PG-TDSON-8
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
47
30
11
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJAꢀ=50K/W1)
Pulsed drain current2)
Avalanche energy, single pulse3)
ID,pulse
EAS
-
-
-
-
188
13
A
TC=25ꢀ°C
-
mJ
V
ID=30ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
20
-
-
-
-
-
36
2.1
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJA
-
2.1
-
3.5
K/W
K/W
-
-
Device on PCB,
-
50
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=14ꢀµA
1.1
1.7
2.3
-
-
0.1
10
1
100
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=60ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
7.7
11
9.4
13.4
VGS=10ꢀV,ꢀID=24ꢀA
VGS=4.5ꢀV,ꢀID=12ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.1
45
1.65
-
Ω
-
22
S
|VDS|>2|ID|RDS(on)max,ꢀID=24ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics1)ꢀ
Values
Typ.
970
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
1300 pF
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=30ꢀV,ꢀf=1ꢀMHz
Output capacitance
210
280
21
pF
pF
Reverse transfer capacitance
12
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=24ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=24ꢀA,
RG,ext=1.6ꢀΩ
3
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=24ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
14
3
VDD=30ꢀV,ꢀVGS=10ꢀV,ꢀID=24ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
3
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=30ꢀV,ꢀID=24ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=24ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=24ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=24ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=24ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=30ꢀV,ꢀID=24ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
2
-
2
3.5
-
Qsw
4
Gate charge total1)
Qg
7
9.4
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
3.1
12
13
-
nC
nC
18
VDD=30ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
30
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
188
1.2
36
A
TC=25ꢀ°C
Diode forward voltage
0.9
18
6
V
VGS=0ꢀV,ꢀIF=24ꢀA,ꢀTj=25ꢀ°C
VR=30ꢀV,ꢀIF=24ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=30ꢀV,ꢀIF=24ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
12
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
50
40
30
20
10
0
30
20
10
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
0.5
102
101
100
10-1
100
0.2
10 µs
0.1
0.05
100 µs
0.02
10-1
0.01
single pulse
1 ms
DC
10 ms
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
20
10 V
140
4 V
5 V
120
15
4.5 V
4.5 V
5 V
100
5.5 V
80
10
6 V
7 V
4 V
60
10 V
40
5
3.5 V
3.2 V
20
3 V
2.8 V
0
0
0.0
0.5
1.0
1.5
2.0
0
40
80
120
160
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
80
80
70
60
50
40
30
20
60
40
20
0
10
150 °C
25 °C
0
0
1
2
3
4
5
6
0
20
40
60
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
18
3
16
14
12
2
max
140 µA
10
typ
14 µA
8
6
4
2
0
1
0
-60
-60
-20
20
60
100
140
180
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=24ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
150 °C
25°C max
150°C max
Ciss
103
102
101
100
102
101
100
Coss
Crss
0
20
40
60
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
9
8
7
6
30 V
25 °C
48 V
101
5
12 V
4
3
2
1
0
100 °C
125 °C
100
100
101
102
103
0
5
10
15
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=24ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
70
66
62
58
54
50
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.03
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
06.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTMꢀPower-Transistor,ꢀ60ꢀV
BSC094N06LS5
PG-TDSON-8: Recommended Boardpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2023-01-13
OptiMOSTM Power-Transistor , 60 V
BSC094N06LS5
Dimension in mm
Figure 3 Outline Tape (TDSON-8)
Final Data Sheet
12
Rev. 2.2, 2023-01-13
OptiMOSTM Power-Transistor , 60 V
BSC094N06LS5
Revision History
BSC094N06LS5
Revision: 2023-01-13, Rev. 2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2016-09-23
Release of final version
Update package drawings
Update Marking
2020-05-15
2023-01-13
Trademarks
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Final Data Sheet
13
Rev. 2.2, 2023-01-13
相关型号:
BSC096N10LS5
逻辑电平 OptiMOS™ 5 100V 功率 MOSFET提供低栅极电荷,可在不影响导通损耗的情况下减少开关损耗。采用 SuperS08 封装的 OptiMOS™ 5(BSC096N10LS5)功率 MOSFET 可在高开关频率下运作,并且其栅极阈值电压低,因此 MOSFET 可直接由微控制器驱动。它可用于 充电器、 适配器 和 电信等应用
INFINEON
BSC098N10NS5
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
INFINEON
BSC0993NDATMA1
Power Field-Effect Transistor, 17A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON-8
INFINEON
BSC100N03LSGATMA1
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC100N03MSGATMA1
Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC100N06LS3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机以及平板电脑充电器中的电源。此外,这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
BSC100N06LS3GATMA1
Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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