BSC146N10LS5 [INFINEON]
逻辑电平 OptiMOS™ 5 100V 功率 MOSFET提供低栅极电荷，可在不影响导通损耗的情况下减少开关损耗。采用 SuperS08 封装的 OptiMOS™ 5（BSC146N10LS5）功率 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。它可用于 充电器、 适配器 和 电信等应用;
| 型号： | BSC146N10LS5 |
| 厂家： | 
Infineon |
| 描述： | 逻辑电平 OptiMOS™ 5 100V 功率 MOSFET提供低栅极电荷，可在不影响导通损耗的情况下减少开关损耗。采用 SuperS08 封装的 OptiMOS™ 5（BSC146N10LS5）功率 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。它可用于 充电器、 适配器 和 电信等应用 开关 栅 驱动 控制器 电信 微控制器 栅极 |
| 文件： | 总12页 (文件大小：1202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC146N10LS5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀRec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
S 1
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 2
S 3
G 4
Parameter
Value
100
14.6
44
Unit
6 D
5 D
VDS
V
RDS(on),max
ID
mΩ
A
Qoss
20
nC
nC
QG(0V..4.5V)
7.6
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC146N10LS5
PG-TDSON-8
146N10LS
-
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
-
-
-
-
-
-
44
28
10
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=50ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
176
30
A
TA=25ꢀ°C
-
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
20
-
-
-
-
-
52
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=50ꢀ°C/W3)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
1.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
2.4
°C/W -
°C/W -
Device on PCB,
-
-
50
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
1.1
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=23ꢀµA
1.7
2.3
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
12.2
15.8
14.6
20.8
VGS=10ꢀV,ꢀID=22ꢀA
VGS=4.5ꢀV,ꢀID=11ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1
1.5
-
Ω
-
19
38
S
|VDS|≥2|ID|RDS(on)max,ꢀID=22ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
1000 1300 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
170
9
220
15
pF
pF
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=22ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
5
-
-
-
-
ns
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=22ꢀA,
RG,ext=3ꢀΩ
3
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=22ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
14
3
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=22ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
3.3
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=22ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
1.7
-
2.8
4.2
-
Qsw
4.4
Gate charge total1)
Qg
7.6
10
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
3.3
13
-
nC
nC
20
27
VDS=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
44
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
176
1.1
52
A
TC=25ꢀ°C
Diode forward voltage
0.9
26
19
V
VGS=0ꢀV,ꢀIF=22ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=22ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=22ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
38
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
60
50
50
40
30
20
10
0
40
30
20
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
102
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
102
10 µs
101
100 µs
1 ms
101
100
10 ms
100
10-1
10-2
DC
10-1
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
175
40
7 V
10 V
35
150
3 V
30
25
20
15
10
5
5 V
125
100
75
50
25
0
3.2 V
3.5 V
4 V
4.5 V
4.5 V
4 V
5 V
7 V
10 V
3.5 V
3.2 V
2.8 V
3 V
0
0
1
2
3
4
5
0
20
40
60
80
100
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
80
40
35
30
25
20
60
25 °C
150 °C
150 °C
40
20
0
15
25 °C
10
5
0
0
1
2
3
4
5
6
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=22ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
2.4
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
0.0
230 µA
23 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=22ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
150 °C, max
103
102
101
100
Ciss
102
101
100
Coss
Crss
0
20
40
60
80
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
20 V
50 V
80 V
8
6
4
2
0
101
25 °C
100 °C
125 °C
100
10-1
100
101
102
103
0.0
2.5
5.0
7.5
10.0
12.5
15.0
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=22ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
94
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC146N10LS5
PG-TDSON-8: Recommended Boardpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2020-08-06
OptiMOSTM 5 Power-Transistor , 100 V
BSC146N10LS5
Revision History
BSC146N10LS5
Revision: 2020-08-06, Rev. 2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
Release of final version
2016-09-30
2019-05-10
2019-05-20
2020-08-06
Update Rg, trr, Qrr, Diagrams 5, 8 and 9
Update Id pulse, Diagrams 2, 3, 12
Update Max Current Rating
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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please contact the nearest Infineon Technologies Office.
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Final Data Sheet
12
Rev. 2.3, 2020-08-06
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Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0159ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC160N10NS3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
BSC160N10NS3GATMA1
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC160N10NS3GXT
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC160N10NSG
Power Field-Effect Transistor, 8.8A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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