BSC160N10NS3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。;型号: | BSC160N10NS3 G |
厂家: | Infineon |
描述: | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比,该系列在 R Ds(on)和 FOM(品质因数)方面均降低了30%。 |
文件: | 总10页 (文件大小:545K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSC160N10NS3 G
$(*'#$%TM3 Power-Transistor
Product Summary
VDS
100
16
V
9 ꢀ .1)+ )7% $ &- / $ # ꢁ$ # # - ,3% /0)- ,
9 ꢂ ꢁ# (!,,% *ꢃ ,- /+ !* *% 3% *
RDS(on),max
ID
m#
A
42
9 ꢄ 5# % **% ,1 '!1% # (!/'% 5 R DS(on) product (FOM)
9 % /6 *- 4 - ,ꢁ/% 0)01!,# % R DS(on)
PG-TDSON-8
9 ꢅ ꢆ ꢇ 8ꢈ - .% /!1),' 1% + .% /!12 /%
9 ꢉ " ꢁ&/% % *% !$ .*!1),'ꢊ ꢋ - ꢌ ꢍ # - + .*)!,1
9 ꢎ 2 !*)&)% $ !# # - /$ ),' 1- ꢏ ꢄ ꢐ ꢄ ꢈ 1) for target application
9 ꢌ !*- '% ,ꢁ&/% % !## - /$ ),' 1- ꢑꢄ ꢈ ꢒ ꢅ ꢓ ꢔ ꢕ ꢁꢓ ꢁꢓ ꢅ
Type
Package
Marking
BSC160N10NS3 G
PG-TDSON-8
160N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
Continuous drain current
42
27
A
T C=100 °C
T A=25 °C,
R thJA=50 K/W2)
8.8
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
168
50
I D=33 A, R GS=25 #
Avalanche energy, single pulse
Gate source voltage
mJ
V
V GS
±20
P tot
T C=25 °C
Power dissipation
60
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
Rev. 2.4
page 1
2009-10-30
BSC160N10NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
R thJA
Thermal resistance, junction - case
-
-
-
-
2.1
50
K/W
Thermal resistance,
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=33 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
2.7
3.5
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.01
10
1
µA
V DS=100 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=33 A
V GS=6 V, I D=16 A
R G
Drain-source on-state resistance
13.9
17.6
1.4
16
33
-
m#
Gate resistance
#
|V DS|>2|I D|R DS(on)max
I D=33 A
,
g fs
Transconductance
21
42
-
S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 2.4
page 2
2009-10-30
BSC160N10NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
1300
240
11
1700 pF
V GS=0 V, V DS=50 V,
f =1 MHz
C oss
C rss
t d(on)
t r
320
-
13
-
-
-
-
ns
15
V DD=50 V, V GS=10 V,
I D=16 A, R G=1.6 #
t d(off)
t f
Turn-off delay time
Fall time
22
5
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
6
3
-
-
nC
Q gd
V DD=50 V, I D=16 A,
V GS=0 to 10 V
Q sw
Q g
5
-
Gate charge total
19
4.4
25
25
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=50 V, V GS=0 V
33
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
42
A
T C=25 °C
I S,pulse
168
V GS=0 V, I F=33 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
-
V
t rr
Reverse recovery time
-
-
53
83
ns
V R=50 V, I F=16A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.4
page 3
2009-10-30
BSC160N10NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS: ꢅ ꢇ
70
60
50
40
30
20
10
0
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
102
101
100
10-1
101
100 ns
1 µs
0.5
10 µs
100
0.2
0.1
100 µs
0.05
1 ms
0.02
DC
10-1
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.4
page 4
2009-10-30
BSC160N10NS3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
120
30
4.5 V
10 V
5 V
100
80
60
40
20
0
25
7 V
5.5 V
6 V
6 V
20
15
10
5
7 V
10 V
5.5 V
5 V
4.5 V
0
0
1
2
3
0
20
40
60
80
100
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
60
40
20
80
60
40
20
0
150 °C
25 °C
0
0
1
2
3
4
5
6
7
0
20
40
60
80
100
VGS [V]
ID [A]
Rev. 2.4
page 5
2009-10-30
BSC160N10NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R DS(on)=f(T j); I D=33 A; V GS=10 V
35
30
25
4
3.5
3
330 µA
2.5
2
33 µA
20
98 %
typ
15
1.5
1
10
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
Tj [°C]
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
102
101
100
100
Coss
25 °C
150 °C, 98%
10
Crss
150 °C
25 °C, 98%
1
0
0
20
40
VDS [V]
60
80
0.5
1
1.5
2
VSD [V]
Rev. 2.4
page 6
2009-10-30
BSC160N10NS3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=16 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 #
parameter: T j(start)
10
80 V
8
50 V
6
20 V
4
2
0
0
5
10
15
20
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
105
100
95
90
-60
-20
20
60
100
140
180
Tj [°C]
BSC160N10NS3 G
Package Outline: PG-TDSON-8
Rev. 2.4
page 8
2009-10-30
BSC160N10NS3 G
Dimensions in mm
Rev. 2.4
page 9
2009-10-30
BSC160N10NS3 G
Rev. 2.4
page 10
2009-10-30
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