首页 |元器件品牌

BSC430N25NSFD [INFINEON]

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.;
BSC430N25NSFD
型号： BSC430N25NSFD
厂家： Infineon    Infineon
描述：

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
文件： 总11页 (文件大小：938K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BSC430N25NSFD  
MOSFET  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
TSON-8-3  
8
7
6
5
5
6
Features  
7
8
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
Pin 1  
2
4
3
3
2
4
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
•ꢀ175°Cꢀrated  
ProductꢀValidation:  
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtestsꢀof  
JEDEC47/20/22  
S 1  
8 D  
7 D  
S 2  
S 3  
G 4  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
250  
43  
Unit  
6 D  
5 D  
VDS  
V
RDS(on),max  
ID  
mΩ  
A
36  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSC430N25NSFD  
TSON-8-3  
430N25F  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
36  
26  
TC=25ꢀ°C  
A
Continuous drain current  
ID  
TC=100ꢀ°C  
Pulsed drain current1)  
ID,pulse  
EAS  
-
-
-
-
144  
159  
A
TC=25ꢀ°C  
Avalanche energy, single pulse  
mJ  
ID=23ꢀA,ꢀRGS=25ꢀΩ  
ID=36ꢀA,ꢀVDS=125ꢀV,  
di/dt=1500ꢀA/µs,ꢀTj,max=175ꢀ°C  
Reverseꢀdiodeꢀdv/dt  
dv/dt  
-
-
60  
kV/µs  
Gate source voltage  
Power dissipation  
VGS  
Ptot  
-20  
-
-
-
20  
V
-
214  
W
TC=25ꢀ°C  
IEC climatic category;  
DIN IEC 68-1: 55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
at Tj=25 °C, unless otherwise specified  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
0.4  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
0.7  
K/W  
K/W  
-
-
Thermal resistance, junction - ambient,  
minimal footprint  
-
-
-
-
75  
50  
Thermal resistance, junction - ambient,  
6 cm2 cooling area2)  
RthJA  
K/W  
-
1) See Diagram 3  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
250  
2
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
3
4
VDS=VGS,ꢀID=137ꢀµA  
-
-
0.1  
10  
1
100  
VDS=200ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=200ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance1)  
IGSS  
RDS(on)  
RG  
-
1
100  
43  
5.4  
-
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
34  
3.6  
73  
mΩ VGS=10ꢀV,ꢀID=36ꢀA  
-
Ω
-
Transconductance  
gfs  
37  
S
|VDS|>2|ID|RDS(on)max,ꢀID=36ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
2770 3680 pF  
VGS=0ꢀV,ꢀVDS=125ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=125ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=125ꢀV,ꢀf=1ꢀMHz  
157  
6
209  
10  
pF  
pF  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=16.5ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
8
-
-
-
-
ns  
ns  
ns  
ns  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=16.5ꢀA,  
RG,ext=1.6ꢀΩ  
6
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=16.5ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
29  
10  
VDD=125ꢀV,ꢀVGS=10ꢀV,ꢀID=16.5ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
13  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge1)  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Output charge1)  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=125ꢀV,ꢀID=36ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=36ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=36ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=36ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀID=36ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=125ꢀV,ꢀVGS=0ꢀV  
Qgd  
4.1  
-
Qsw  
Qg  
8.3  
-
34  
42  
-
Vplateau  
Qoss  
4.5  
74  
99  
nC  
1) Defined by design. Not subject to production test  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
36  
Diode continous forward current  
Diode pulse current1)  
Diode hard commutation current2)  
IS  
-
-
-
-
-
A
A
A
V
TC=25ꢀ°C  
IS,pulse  
IS,hard  
VSD  
-
144  
36  
TC=25ꢀ°C  
-
TC=25ꢀ°C,ꢀdi/dt=1500ꢀA/µs  
VGS=0ꢀV,ꢀIF=36ꢀA,ꢀTj=25ꢀ°C  
Diode forward voltage  
0.9  
1.2  
VR=125ꢀV,ꢀIF=12.5ꢀA,  
diF/dt=100ꢀA/µs  
Reverse recovery time3)  
trr  
-
-
96  
-
-
ns  
VR=125ꢀV,ꢀIF=12.5ꢀA,  
diF/dt=100ꢀA/µs  
Reverse recovery charge3)  
Qrr  
227  
nC  
1) Diode pulse current is defined by thermal and/or package limits  
2) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs  
3) Defined by design. Not subject to production test  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
240  
40  
200  
160  
120  
80  
30  
20  
10  
0
40  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
50  
100  
150  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS>=10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
100  
1 µs  
0.5  
0.2  
102  
101  
100  
10-1  
10 µs  
100 µs  
1 ms  
10-1  
0.1  
0.05  
0.02  
10 ms  
DC  
0.01  
single pulse  
10-2  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
120  
100  
100  
80  
60  
10 V  
7 V  
80  
5 V  
60  
4.5 V  
5 V  
40  
7 V  
40  
10 V  
4.5 V  
20  
0
20  
0
0
1
2
3
4
5
0
10  
20  
30  
40  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
60  
80  
70  
60  
50  
40  
30  
20  
10  
0
40  
20  
175 °C  
25 °C  
0
0
2
4
6
0
10  
20  
30  
40  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
120  
4.0  
3.5  
100  
80  
1370 µA  
3.0  
137 µA  
2.5  
60  
2.0  
1.5  
1.0  
0.5  
0.0  
max  
40  
20  
0
typ  
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=37ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
175 °C  
25°C, 98%  
175°C, 98%  
Ciss  
103  
102  
101  
100  
Coss  
102  
Crss  
101  
100  
0
40  
80  
120  
160  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
8
6
200 V  
25 °C  
125 V  
50 V  
101  
100 °C  
4
2
0
150 °C  
100  
100  
101  
102  
103  
0
10  
20  
30  
40  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=37ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
280  
270  
260  
250  
240  
230  
220  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00187559  
MILLIMETERS  
DIMENSION  
REVISION  
MIN.  
MAX.  
1.10  
0.54  
0.05  
01  
A
b
-
0.34  
-
SCALE 10:1  
b1  
c
0.20  
0
1
2mm  
D
4.90  
4.25  
5.90  
4.00  
3.14  
0.20  
5.10  
4.45  
6.10  
4.20  
3.34  
0.40  
D1  
E
EUROPEAN PROJECTION  
E1  
E2  
E3  
e
1.27  
(0.37)  
K2  
L
0.60  
0.43  
0.80  
0.63  
ISSUE DATE  
14.12.2017  
L1  
L2  
(0.25)  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTSON-8-3,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2018-05-14  
OptiMOSTMFDꢀPower-Transistor,ꢀ250ꢀV  
BSC430N25NSFD  
RevisionꢀHistory  
BSC430N25NSFD  
Revision:ꢀ2018-05-14,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
Insert Rg max  
2018-03-14  
2018-05-14  
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  
TrademarksꢀupdatedꢀAugustꢀ2015  
OtherꢀTrademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  
erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2018-05-14  

相关型号：

BSC440N10NS3 G

 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON

BSC440N10NS3G

 OptiMOS3 Power-Transistor
INFINEON

BSC440N10NS3GATMA1

 Power Field-Effect Transistor, 5.3A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON

BSC500N20NS3 G

 英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
INFINEON

BSC520N15NS3G

 OptiMOS™3 Power-Transistor
INFINEON

BSC520N15NS3GATMA1

 Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON

BSC520N15NS3GXT

 Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON

BSC600N25NS3 G

 英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
INFINEON

BSC600N25NS3G

 OptiMOS3 Power-Transistor
INFINEON

BSC750N10NDG

 OptiMOSTM2 Power-Transistor
INFINEON

BSC882N03MSG

 Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON

BSC882N03MSGATMA1

 Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
©2020 ICPDF网 联系我们和版权申明