BSC900N20NS3 G [INFINEON]
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。;
| 型号： | BSC900N20NS3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。 电机 驱动 转换器 |
| 文件： | 总9页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC900N20NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
V DS
200
90
V
• Optimized for dc-dc conversion
• N-channel, normal level
R DS(on),max
I D
mΩ
A
15.2
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance R DS(on)
PG-TDSON-8
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC900N20NS3 G
PG-TDSON-8
900N20NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T C=25 °C
T C=100 °C
T C=25 °C
Continuous drain current
15.2
10.7
61
A
Pulsed drain current2)
I D,pulse
E AS
I D=7.6 A, R GS=25 Ω
Avalanche energy, single pulse
100
mJ
Reverse diode dv /dt
dv /dt
10
kV/µs
V GS
Gate source voltage
±20
V
P tot
T C=25 °C
Power dissipation
62.5
W
°C
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
1)J-STD20 and JESD22
2) see figure 3
Rev. 2.2
page 1
2011-05-20
BSC900N20NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
2
K/W
Thermal resistance,
junction - ambient
6 cm2 cooling area3)
R thJA
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
Drain-source breakdown voltage
Gate threshold voltage
200
2
-
-
V
V GS(th)
V DS=V GS, I D=30 µA
3
4
V DS=160 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V
DS=160 V, V GS=0 V,
100
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
1
100 nA
R DS(on) V GS=10 V, I D=7.6 A
77
2.2
90
-
mΩ
R G
Ω
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
8
16
-
S
I D=7.6 A
2
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2011-05-20
BSC900N20NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
690
52
5.2
5
920 pF
V GS=0 V, V DS=100 V,
C oss
C rss
t d(on)
t r
69
-
f =1 MHz
-
-
-
-
ns
V DD=100 V,
4
V
GS=10 V, I D=7.6 A,
t d(off)
t f
Turn-off delay time
Fall time
10
3
R G=1.6 Ω
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
3.1
1.3
2.4
9
-
nC
Q gd
-
-
V DD=100 V, I D=7.6 A,
Q sw
Q g
V
GS=0 to 10 V
Gate charge total
11.6
-
V plateau
Q oss
Gate plateau voltage
Output charge
4.5
20
V
V DD=100 V, V GS=0 V
26
nC
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
15.2
61
A
T C=25 °C
I S,pulse
V GS=0 V, I F=15.2 A,
T j=25 °C
V SD
Diode forward voltage
-
1
1.2
V
t rr
Reverse recovery time
-
-
86
-
-
ns
V R=100 V, I F=I S,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
309
nC
4) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2011-05-20
BSC900N20NS3 G
1 Power dissipation
2 Drain current
P
tot=f(T C)
I D=f(T C); V GS≥10 V
16
14
12
10
8
70
60
50
40
30
20
10
6
4
2
0
0
0
0
40
80
120
160
40
80
120
160
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
102
101
100
10-1
101
1 µs
10 µs
100 µs
1 ms
100
0.5
10 ms
DC
0.2
0.1
0.05
0.02
0.01
single pulse
10-1
10-5
10-1
100
101
102
103
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 2.2
page 4
2011-05-20
BSC900N20NS3 G
6 Typ. drain-source on resistance
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
30
160
120
5.5 V
6 V
10 V
25
7 V
20
5 V
5.5 V
5 V
6 V
8 V
15
10
5
80
10 V
40
4.5 V
0
0
0
1
2
3
4
5
0
4
8
12
16
V DS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
40
35
30
25
20
15
10
32
28
24
20
16
12
8
150 °C
5
4
25 °C
0
0
0
2
4
6
8
0
5
10
15
20
25
30
I D [A]
V GS [V]
Rev. 2.2
page 5
2011-05-20
BSC900N20NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
R
DS(on)=f(T j); I D=7.6 A; V GS=10 V
250
4
3.5
200
300 µA
3
30 µA
2.5
150
2
1.5
1
98 %
100
typ
50
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
103
100
Ciss
25 °C
102
101
100
10
150 °C, 98%
Coss
150 °C
25 °C, 98%
1
Crss
0.1
0
0
40
80
120
160
0.5
1
1.5
2
V DS [V]
V SD [V]
Rev. 2.2
page 6
2011-05-20
BSC900N20NS3 G
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=7.6 A pulsed
V
I
parameter: T j(start)
parameter: V DD
10
10
25 °C
100 °C
8
6
4
2
0
125 °C
100 V
40 V
160 V
1
0.1
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
t AV [µs]
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=1 mA
230
V GS
Q g
220
210
200
190
180
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 2.2
page 7
2011-05-20
BSC900N20NS3 G
Package Outline:PG-TDSON-8
Rev. 2.2
page 8
2011-05-20
BSC900N20NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
Rev. 2.2
page 9
2011-05-20
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