BSM05GD100DN1 [INFINEON]
Insulated Gate Bipolar Transistor, 5A I(C), 1000V V(BR)CES, N-Channel;
| 型号： | BSM05GD100DN1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 5A I(C), 1000V V(BR)CES, N-Channel 栅 |
| 文件： | 总1页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
BSM100GAL120DN2
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)
INFINEON
BSM100GB100D
Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7
INFINEON
BSM100GB120DN2
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
INFINEON
BSM100GB120DN2K
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
INFINEON
©2020 ICPDF网 联系我们和版权申明