BSO301SP H [INFINEON]
英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。;
| 型号： | BSO301SP H |
| 厂家： | 
Infineon |
| 描述： | 英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。 |
| 文件： | 总9页 (文件大小：325K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSO301SP H
OptiMOS®-P Power-Transistor
Product Summary
V DS
Features
-30
8.0
V
• P-Channel
R DS(on),max
mΩ
A
V
GS= 10 V
• Enhancement mode
VGS= 4.5 V
12.0
-14.9
• Logic level
I D
A
• 150°C operating temperature
• Avalanche rated
PG-DSO-8
• Qualified according JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
Leadfree
Halogen free
packing
dry
BSO301SP H
PG-DSO-8
301SP
Yes
Yes
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
≤10 secs steady state
T A=25 °C1)
I D
Continuous drain current
-14.9
-11.9
-12.6
-10
A
T A=70 °C1)
T A=25 °C2)
I D,pulse
-60
248
±20
Pulsed drain current
E AS
I D=-14.9 A, R GS=25 Ω
Avalanche energy, single pulse
mJ
V GS
Gate source voltage
V
T A=25 °C1)
P tot
Power dissipation
2.5
1.79
W
°C
T j, T stg
-55 ... 150
1C (1kV - 2kV)
260
Operating and storage temperature
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
°C
55/150/56
Rev. 1.32
page 1
2010-05-12
BSO301SP H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
Thermal resistance,
R thJS
-
-
-
-
-
-
-
-
-
-
35
110
150
50
K/W
junction - soldering point
minimal footprint,
Thermal resistance,
junction - ambient
R thJA
t p≤10 s
minimal footprint,
steady state
6 cm2 cooling area1),
t p≤10 s
6 cm2 cooling area1),
steady state
80
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V
V
GS=0 V, I D=-250µA
DS=V GS
Drain-source breakdown voltage
Gate threshold voltage
-30
-1
-
-
V
,
V GS(th)
-1.5
-2
I D=-250 µA
V
DS=-30 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
-0.1
-10
-1
µA
T j=25 °C
V
DS=-30 V, V GS=0 V,
-100
T j=125 °C
I GSS
V
V
GS=-20 V, V DS=0 V
GS=-4.5 V, I D=-12 A
Gate-source leakage current
-
-
-10
8.8
-100 nA
R DS(on)
Drain-source on-state resistance
12
mΩ
R DS(on)
V
GS=-10 V, I D=-14.9 A
Drain-source on-state resistance
Transconductance
-
6.3
44
8.0
|V DS|>2|I D|R DS(on)max
I D=-14.9 A
,
g fs
22
-
S
2
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.32
page 2
2010-05-12
BSO301SP H
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
4430
1180
970
15
5890 pF
1570
V
V
GS=0 V,
C oss
C rss
t d(on)
t r
DS=-25 V, f =1 MHz
1500
23
33
ns
V
V
DD=-15 V,
GS=-10 V,
22
t d(off)
t f
Turn-off delay time
Fall time
130
110
195
165
I D=-1 A, R G=6 Ω
Gate Charge Characteristics3)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
-11
-7.1
-35
-15
nC
Q g(th)
Q gd
-9.5
V
DD=-24 V,
I D=-14.9 A,
Q sw
-40
-59
-136
-
V
GS=0 to -10 V
Q g
Gate charge total
-102
-2.5
-36
V plateau
Q oss
Gate plateau voltage
Output charge
V
A
V
DD=-15 V, V GS=0 V
-48
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
-2.1
-60
T A=25 °C
I S,pulse
V
GS=0 V, I F=-14.9 A,
V SD
Diode forward voltage
Reverse recovery time
-
-
-
-0.82
32
-1.2
40
V
T j=25 °C
V R=15 V, I F=-14.9A,
di F/dt =100 A/µs
t rr
ns
nC
Q rr
Reverse recovery charge
2) See figure 3
-20
-25
3) See figure 16 for gate charge parameter definition
Rev. 1.32
page 3
2010-05-12
BSO301SP H
1 Power dissipation
2 Drain current
P
tot=f(T A); t p≤10 s
I D=f(T A); |V GS|≥10 V; t p≤10 s
3
2.5
2
16
12
8
1.5
1
4
0.5
0
0
0
40
80
120
160
0
40
80
120
160
T
A [°C]
T
A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C1); D =0
4 Max. transient thermal impedance
thJS=f(t p)
Z
parameter: t p
parameter: D =t p/T
102
102
100
100
10 µs
100 µs
0.5
0.2
1 ms
101
101
10
10
limited by on-state
resistance
0.1
0.05
10 ms
0.02
100
10-1
10-2
100
1
1
0.01
10-1
0.1
DC
0.1
single pulse
10-2
0.01
0.1
0.01
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
-V DS [V]
t
p [s]
Rev. 1.32
page 4
2010-05-12
BSO301SP H
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
60
25
-10 V
-3.5 V
-4.5 V
3.0
2.5
2.7
-3.2 V
-3 V
50
40
30
20
10
0
20
15
10
5
3.2
3.5
4.5
10
-2.7 V
-2.5 V
-2.3 V
0
0
0
1
2
3
10
20
30
40
-V DS [V]
-ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
60
50
40
30
20
60
40
20
0
C °25
C °150
10
0
0
1
2
3
4
0
10
20
30
-ID [A]
-V GS [V]
Rev. 1.32
page 5
2010-05-12
BSO301SP H
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)=f(T j); I D=-14.9 A; V GS=-10 V
V
GS(th)=f(T j); V GS=V DS; I D=-250 µA
12
10
2.5
2
max.
98 %
8
typ.
1.5
typ.
6
min.
1
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
10000
100
Ciss
25 °C, typ
150 °C, typ
10
Coss
25 °C, 98%
150 °C, 98%
103
1000
Crss
1
102
100
0.1
0
0
5
10
15
20
25
30
0.5
1
1.5
-V SD [V]
-V DS [V]
Rev. 1.32
page 6
2010-05-12
BSO301SP H
13 Avalanche characteristics
AS=f(t AV); R GS=25 Ω
14 Typ. gate charge
GS=f(Q gate); I D=-14.9 A pulsed
V
I
parameter: T j(start)
parameter: V DD
100
10
9
8
7
6
5
4
3
2
1
0
6
15
24
C °25
10
C °100
C °125
1
1
10
100
1000
0
20
40
60
80
100
120
-Q gate [nC]
t
AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)=f(T j); I D=-250 µA
36
34
32
30
28
26
24
22
20
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.32
page 7
2010-05-12
BSO301SP H
Package Outline
P-DSO-8: Outline
Rev. 1.32
page 8
2010-05-12
BSO301SP H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.32
page 9
2010-05-12
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