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BSP300L6433 [INFINEON]

Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4;
BSP300L6433
型号： BSP300L6433
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
文件： 总8页 (文件大小：2586K)
中文：  中文翻译
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BSP 300  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Avalanche rated  
• V  
= 2.0... 4.0 V  
GS(th)  
Pb-free lead plating; RoHS compliant available  
•
Pin 1  
G
Pin 2  
D
Pin 3  
Pin 4  
D
S
Type  
Package  
PG-SOT-223  
Marking  
VDS  
ID  
RDS(on)  
20  
BSP 300  
800 V  
0.19 A  
W
BSP 300  
Type  
RoHS compliant  
Tape and Reel Information  
BSP 300  
BSP 300  
BSP 300  
BSP 300  
No  
No  
E6433  
E6327  
L6433  
L6327  
Yes  
Yes  
Maximum Ratings  
Parameter  
Symbol  
Values  
0.19  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
A
DC drain current, pulsed  
I
Dpuls  
T = 25 °C  
0.76  
A
Avalanche energy, single pulse  
E
mJ  
AS  
W
= 25  
I = 0.8 A, V = 50 V, R  
GS  
D
DD  
L = 105 mH, T = 25 °C  
36  
j
Gate source voltage  
Power dissipation  
V
±
20  
V
GS  
P
W
tot  
T = 25 °C  
1.8  
A
Rev 1.0  
Page 1  
2005-10-27  
BSP 300  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Chip or operating temperature  
Storage temperature  
T
-55 ... + 150  
-55 ... + 150  
°C  
j
T
stg  
1)  
Thermal resistance, chip to ambient air  
R
£
£
70  
14  
K/W  
thJA  
Thermal resistance, junction-soldering point 1)  
DIN humidity category, DIN 40 040  
R
thJS  
E
IEC climatic category, DIN IEC 68-1  
55 / 150 / 56  
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 °C  
V
V
I
V
(BR)DSS  
V
800  
2
-
-
GS  
D
j
Gate threshold voltage  
I = 1 mA  
GS(th)  
V
=V  
3
4
GS DS, D  
Zero gate voltage drain current  
µA  
DSS  
V
V
= 800 V, V = 0 V, T = 25 °C  
-
0.1  
10  
1
DS  
DS  
GS  
j
= 800 V, V = 0 V, T = 125 °C  
-
-
-
100  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
10  
15  
100  
20  
GS  
DS  
W
Drain-Source on-state resistance  
= 10 V, I = 0.19 A  
R
DS(on)  
V
GS  
D
Rev 1.0  
Page 2  
2005-10-27  
BSP 300  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
V
³
2 I  
R I = 0.19 A  
0.06  
0.27  
170  
20  
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
t
pF  
iss  
V
-
230  
30  
15  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
rss  
V
-
-
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
10  
GS  
DS  
Turn-on delay time  
ns  
d(on)  
V
= 30 V, V = 10 V, I = 0.25 A  
GS D  
DD  
GS  
R
= 50  
W
-
-
-
-
7
11  
24  
36  
28  
Rise time  
t
t
t
r
V
= 30 V, V = 10 V, I = 0.25 A  
GS D  
DD  
GS  
R
= 50  
W
16  
27  
21  
Turn-off delay time  
d(off)  
V
= 30 V, V = 10 V, I = 0.25 A  
GS D  
DD  
GS  
R
= 50  
W
Fall time  
f
V
= 30 V, V = 10 V, I = 0.25 A  
GS D  
DD  
GS  
R
= 50  
W
Rev 1.0  
Page 3  
2005-10-27  
BSP 300  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Reverse Diode  
Inverse diode continuous forward current  
I
A
S
T = 25 °C  
-
-
-
-
-
-
0.19  
0.76  
1.4  
-
A
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
-
A
Inverse diode forward voltage  
V
V
SD  
V
= 0 V, I = 0.38 A, T = 25 °C  
1
GS  
F
j
Reverse recovery time  
V = 30 V, I =l = 0 , di /dt = 100 A/µs  
t
ns  
µC  
rr  
95  
0.25  
R
F
S
F
Reverse recovery charge  
Q
rr  
V = 30 V, I l = 0 , di /dt = 100 A/µs  
-
=
R
F
S
F
Rev 1.0  
Page 4  
2005-10-27  
BSP 300  
Power dissipation  
Drain current  
¦
¦
I = (T )  
D A  
P
= (T )  
tot  
A
³
parameter: V  
10 V  
GS  
2.0  
W
0.20  
A
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.16  
Ptot  
ID  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
0.0  
0
20  
40  
60  
80 100 120  
°C 160  
0
20  
40  
60  
80 100 120  
°C 160  
TA  
TA  
Safe operating area  
Transient thermal impedance  
¦
¦
= (t )  
th JA p  
I = (V  
)
Z
D
DS  
parameter: D = 0.01, T = 25°C  
parameter: D = t / T  
C
p
10 0  
10 2  
K/W  
t
= 760.0µs  
p
1 ms  
10 1  
A
ID  
ZthJC  
10 ms  
10 0  
10 -1  
10 -2  
10 -3  
10 -1  
10 -2  
10 -3  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
single pulse  
10 -4  
DC  
10 -5  
10 0  
10 1  
10 2  
V 10 3  
VDS  
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
Rev 1.0  
Page 5  
2005-10-27  
BSP 300  
Typ. output characteristics  
Typ. drain-source on-resistance  
¦ (  
¦ (  
I = V  
)
R
= I )  
D
DS  
DS (on)  
D
parameter: t = 80 µs , T = 25 °C  
parameter: t = 80 µs, T = 25 °C  
p
j
p
j
l
0.45  
A
65  
P
tot = 2W  
W
a
b
g
f
i
e
k
h
j
d
V
[V]  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
GS  
a
4.0  
ID  
RDS (on)  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
b
c
d
e
f
4.5  
5.0  
c
5.5  
6.0  
6.5  
g
h
i
7.0  
7.5  
c
8.0  
j
9.0  
k
l
10.0  
20.0  
d
e
b
f
g
h
i
j
k
a
V
[V] =  
b
GS  
a
0.05  
0.00  
c
d
e
f
g
h
i
j
k
5
0
4.5 5.0 5.5 6.0 6.5 7.0  
7.5 8.0 9.0 10.0 20.0  
0
4
8
12  
16  
V
24  
0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34  
VDS  
ID  
Typ. transfer characteristics  
Typ. forward transconductance  
g = f (I )  
fs  
I = f(V  
)
D
GS  
D
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
³
V
³
2 x I x R  
V
2 x I x R  
DS  
D
DS(on)max  
DS  
D
DS(on)max  
1.0  
A
0.50  
S
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
ID  
gfs  
0.1  
0.0  
0.05  
0.00  
0
1
2
3
4
5
6
7
8
V
VGS  
10  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
A
ID  
0.8  
Rev 1.0  
Page 16  
2005-10-27  
BSP 300  
Drain-source on-resistance  
Gate threshold voltage  
¦
¦
= (T )  
GS (th) j  
R
= (T )  
V
DS (on)  
j
parameter: I = 0.19 A, V = 10 V  
parameter: V = V , I = 1 mA  
GS DS D  
D
GS  
50  
4.6  
V
W
98%  
typ  
4.0  
40  
35  
30  
25  
20  
15  
10  
RDS (on)  
VGS(th)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
98%  
typ  
2%  
5
0
0.4  
0.0  
-60  
-20  
20  
60  
100  
°C  
160  
-60  
-20  
20  
60  
100  
°C  
160  
Tj  
Tj  
Typ. capacitances  
C = f (V  
Forward characteristics of reverse diode  
¦
)
I = (V  
)
SD  
DS  
F
parameter: T , t = 80 µs  
parameter:V =0V, f = 1 MHz  
j
p
GS  
10 3  
10 0  
pF  
A
C
IF  
Ciss  
10 2  
10 1  
10 0  
10 -1  
10 -2  
10 -3  
Coss  
Crss  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
0
5
10  
15  
20  
25  
30  
V
VDS  
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
VSD  
3.0  
Rev 1.0  
Page 7  
2005-10-27  
BSP 300  
¦
Avalanche energy E = (T )  
Drain-source breakdown voltage  
AS  
j
parameter: I = 0.8 A, V = 50 V  
¦
= (T )  
j
V
D
DD  
(BR)DSS  
W
R
= 25 , L = 105 mH  
GS  
38  
mJ  
32  
960  
V
920  
EAS  
V(BR)DSS  
900  
28  
24  
20  
16  
12  
8
880  
860  
840  
820  
800  
780  
760  
4
0
740  
720  
20  
40  
60  
80  
100  
120  
°C  
160  
-60  
-20  
20  
60  
100  
°C  
160  
Tj  
Tj  
Rev 1.0  
Page 8  
2005-10-27  

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