BSP315E6327 [INFINEON]
Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN;
| 型号： | BSP315E6327 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN |
| 文件： | 总9页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP 315
®
SIPMOS Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
= -0.8...-2.0 V
GS(th)
Pin 1 Pin 2 Pin 3 Pin 4
G
D
S
D
Type
V
I
R
Package
Marking
DS
D
DS(on)
Ω
BSP 315
-50 V
-1.1 A
0.8
SOT-223
BSP 315
Type
BSP 315
BSP 315
Ordering Code
Q67000-S75
Q67000-S249
Tape and Reel Information
E6327
E6433
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
V
-50
V
DS
DGR
R
= 20 kΩ
-50
GS
±
20
Gate source voltage
V
GS
Continuous drain current
I
A
D
T = 39 °C
-1.1
-4.4
1.8
A
DC drain current, pulsed
I
Dpuls
T = 25 °C
A
Power dissipation
P
W
tot
T = 25 °C
A
Semiconductor Group
1
Sep-12-1996
BSP 315
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤ 70
K/W
thJA
thJS
≤
R
10
E
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
= 0 V, I = -0.25 mA, T = 25 °C
-50
-
-
GS
D
j
Gate threshold voltage
=
V
V
I = -1 mA
-0.8
-1.1
-2
GS DS, D
Zero gate voltage drain current
I
V
V
V
= -50 V, V = 0 V, T = 25 °C
-
-
-
-0.1
-10
-
-1
µA
DS
DS
DS
GS
j
= -50 V, V = 0 V, T = 125 °C
-100
-100
GS
j
= -30 V, V = 0 V, T = 25 °C
nA
nA
GS
j
Gate-source leakage current
= -20 V, V = 0 V
I
GSS
V
-
-
-10
-100
0.8
GS
DS
Ω
Drain-Source on-state resistance
= -10 V, I = -1.1 A
R
DS(on)
V
0.65
GS
D
Semiconductor Group
2
Sep-12-1996
BSP 315
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = -1.1 A
0.25
0.7
300
150
85
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
V
-
-
-
400
230
130
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
GS
DS
Turn-on delay time
= -30 V, V = -10 V, I = -0.29 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
= 50
-
-
-
-
8
12
GS
Rise time
= -30 V, V = -10 V, I = -0.29 A
r
V
DD
GS
D
Ω
R
= 50
35
80
140
55
GS
Turn-off delay time
= -30 V, V = -10 V, I = -0.29 A
d(off)
V
DD
GS
D
R
= 50 Ω
110
190
GS
Fall time
= -30 V, V = -10 V, I = -0.29 A
f
V
DD
GS
D
R
= 50 Ω
GS
Semiconductor Group
3
Sep-12-1996
BSP 315
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-1.1
-4.4
-1.5
A
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = -2.2 A, T = 25 °C
-1.2
GS
F
j
Semiconductor Group
4
Sep-12-1996
BSP 315
Power dissipation
Drain current
ƒ
ƒ
I = (T )
D A
P
= (T )
tot
A
≥
parameter: V
-10 V
GS
2.0
W
-1.2
A
-1.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Ptot
ID
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.0
0
20
40
60
80 100 120
°C 160
TA
0
20
40
60
80 100 120
°C 160
TA
Safe operating area I =f(V
)
DS
Transient thermal impedance
D
ƒ
parameter : D = 0, T =25°C
Z
= (t )
C
th JA
p
parameter: D = t / T
p
10 2
K/W
10 1
ZthJC
10 0
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
single pulse
10 -3
0.01
10 -4
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
5
Sep-12-1996
BSP 315
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: t = 80 µs, T = 25 °C
p j
p
-2.6
2.6
P
tot = 2W
Ω
A
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
a
b
c
d
e
f
l
h
k
j
i
V
[V]
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
g
GS
a
b
c
d
e
f
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
-7.0
-8.0
-9.0
ID
RDS (on)
f
g
h
i
e
g
j
h
i
d
b
k
j
k
l -10.0
c
a
V
[V] =
GS
a
b
c
d
e
f
g
h
i
j
k
-0.2
0.0
0.2
0.0
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0.0
-1.0
-2.0
-3.0
-4.0
V
-6.0
0.0
-0.4
-0.8
-1.2
-1.6
A
-2.4
VDS
ID
Typ. transfer characteristics I = f(V
)
Typ. forward transconductance g = f (I )
D
GS
fs
D
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
-6.0
A
1.1
S
-5.0
0.9
gfs
ID
-4.5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
0.1
0.0
-0.5
0.0
0
-1 -2 -3 -4 -5 -6 -7 -8
V
VGS
-10
0.0
-1.0
-2.0
-3.0
-4.0
A
ID
-5.5
Semiconductor Group
6
Sep-12-1996
BSP 315
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = -1.1 A, V = -10 V
parameter: V = V , I = -1 mA
GS DS D
D
GS
2.4
-4.6
V
Ω
-4.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
RDS (on)
VGS(th)
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
98%
98%
typ
typ
2%
-0.4
0.0
0.2
0.0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
ƒ
C = f (V )
I = (V
)
DS
F
SD
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 4
-10 1
pF
A
C
IF
10 3
10 2
10 1
-10 0
-10 -1
-10 -2
Ciss
Coss
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
-5
-10 -15 -20 -25 -30
V
VDS
-40
0.0
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
V
-3.0
VSD
7
Sep-12-1996
Semiconductor Group
BSP 315
Safe operating area I =f(V
)
DS
Drain-source breakdown voltage
D
ƒ
parameter : D = 0.01, T =25°C
V
= (T )
C
(BR)DSS
j
-60
V
-58
-57
V(BR)DSS
-56
-55
-54
-53
-52
-51
-50
-49
-48
-47
-46
-45
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
8
Sep-12-1996
BSP 315
Package outlines
SOT-223
Dimensions in mm
Semiconductor Group
9
Sep-12-1996
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