BSS127H6327XTSA2 [INFINEON]
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3;
| 型号： | BSS127H6327XTSA2 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 |
| 文件： | 总9页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS127
SIPMOS® Small-Signal-Transistor
Features
Product Summary
V DS
600
V
Ω
A
• n-channel
R DS(on),max
I D
500
• enhancement mode
0.021
• Logic level (4.5V rated)
• dv /dt rated
PG-SOT-23
• 100%lead-free; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Type
Package
Pb-free
Halogen-free Tape and Reel Information
Yes H6327: 3000PCS/reel
Marking
BSS127
PG-SOT-23 Yes
SIs
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
I D=0.021 A,
Continuous drain current
0.021
0.017
0.09
A
I D,pulse
dv /dt
V GS
Pulsed drain current
V
DS=480 V,
di /dt =200 A/µs,
j,max=150 °C
Reverse diode dv /dt
6
kV/µs
V
T
Gate source voltage
±20
ESD class (JESD22-A114-HBM)
Power dissipation
0 (<250)
0.50
P tot
T A=25 °C
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Rev. 2.01
page 1
2010-05-07
BSS127
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=0 V, I D=250 µA
DS=VGS, I D=8 µA
Drain-source breakdown voltage
Gate threshold voltage
600
1.4
-
-
V
2.0
2.6
V
DS=600 V, V GS=0 V,
I D (off)
Drain-source leakage current
-
-
0.1
10
µA
T j=25 °C
V
DS=600 V, V GS=0 V,
-
-
-
-
T j=150 °C
I GSS
V
V
GS=20 V, V DS=0 V
Gate-source leakage current
10
100 nA
GS=4.5 V,
R DS(on)
Drain-source on-state resistance
330
600
Ω
I D=0.016 A
V
GS=10 V, I D=0.016 A
-
310
500
|V DS|>2|I D|R DS(on)max
I D=0.01 A
,
g fs
Transconductance
0.007
0.015
-
S
Rev. 2.01
page 2
2010-05-07
BSS127
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
21
2.4
1.0
6.1
9.7
14
28
3
pF
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
1.5
19.0 ns
14.5
V
V
DD=300 V,
GS=10 V, I D=0.01 A,
t d(off)
t f
Turn-off delay time
Fall time
21
R G=6 Ω
115
170
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.07
0.31
0.65
3.56
0.10 nC
0.5
V
DD=300 V,
I D=0.01 A,
GS=0 to 10 V
Q gd
Q g
1.0
V
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.016
0.09
T A=25 °C
I S,pulse
V
GS=0 V, I F=0.016 A,
V SD
Diode forward voltage
-
0.82
1.2
V
T j=25 °C
V R=300 V,
t rr
Reverse recovery time
-
-
160
240 ns
19.8 nC
I F=0.016 A,
Q rr
Reverse recovery charge
13.2
di F/dt =100 A/µs
Rev. 2.01
page 3
2010-05-07
BSS127
1 Power dissipation
2 Drain current
P
tot=f(T A)
I D=f(T A); V GS≥10 V
0.03
0.025
0.02
0.015
0.01
0.005
0
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
40
80
120
160
40
80
120
160
T
A [°C]
T
A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
thJA=f(t p)
Z
parameter: D =t p/T
10-1
103
10 µs
0.5
100 µs
1 ms
limited by on-state
resistance
102
0.2
10 ms
10-2
10-3
10-4
0.1
0.05
100 ms
DC
0.02
101
0.01
single pulse
100
10-1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
V
DS [V]
100
101
102
103
t
p [s]
Rev. 2.01
page 4
2010-05-07
BSS127
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
0.03
0.025
0.02
0.015
0.01
0.005
0
1000
4 V
2.6 V
3.2 V
10 V
3.6 V
3 V
3.8 V
5 V
800
4 V
600
400
200
0
3.8 V
3.6 V
5 V
10 V
3.2 V
3 V
2.6 V
0
2
4
6
8
10
0
0.005
0.01
0.015
0.02
0.025
V
DS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.025
0.02
0.015
0.01
0.005
0
0.025
0.02
0.015
0.01
0.005
0
0
1
2
3
4
0.000
0.005
0.010
D [A]
0.015
0.020
V
GS [V]
I
Rev. 2.01
page 5
2010-05-07
BSS127
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V DS=VGS; I D=8 µA
R
DS(on)=f(T j); I D=0.016 A; V GS=10 V
V
parameter: I D
1000
900
800
700
3.5
3
2.5
2
max
600
max
typ
500
400
1.5
1
min
typ
300
200
100
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
102
10-1
150 °C, 98%
25 °C, 98%
Ciss
150 °C
25 °C
101
Coss
10-2
Crss
100
10-1
10-3
0
0
5
10
15
DS [V]
20
25
0.4
0.8
1.2
1.6
2
2.4
2.8
V
SD [V]
V
Rev. 2.01
page 6
2010-05-07
BSS127
13 Typ. gate charge
GS=f(Q gate); I D=0.01 A pulsed
14 Drain-source breakdown voltage
V
V
BR(DSS)=f(T j); I D=250 µA
parameter: V DD
700
680
660
640
620
600
580
560
540
520
500
10
9
8
7
6
5
4
3
2
1
0
300 V
120 V
480 V
-60
-20
20
60
100
140
180
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Q
gate [nC]
T j [°C]
15 Gate charge waveforms
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
Rev. 2.01
page 7
2010-05-07
BSS127
SOT-23
Package Outline:
Footprint:
Packaging:
Rev. 2.01
page 8
2010-05-07
BSS127
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.01
page 9
2010-05-07
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