BSS138E-6327 [INFINEON]
Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN;
| 型号： | BSS138E-6327 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN |
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS 138
®
SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
= 0.8...2.0V
GS(th)
Pin 1
G
Pin 2
S
Pin 3
D
Type
Package
Marking
VDS
50 V
ID
RDS(on)
Ω
BSS 138
0.22 A
3.5
SOT-23
SSs
Type
Ordering Code
Q67000-S566
Q67000-S216
Tape and Reel Information
BSS 138
BSS 138
E6327
E6433
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
50
V
DS
V
DGR
Ω
= 20 k
R
50
GS
Gate source voltage
V
± 20
GS
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current
Class 1
I
A
D
T = 31 ˚C
0.22
A
DC drain current, pulsed
I
Dpuls
T = 25 ˚C
0.88
A
Power dissipation
P
W
tot
T = 25 ˚C
0.36
A
Data Sheet
1
05.99
BSS 138
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150
-55 ... + 150
˚C
j
T
stg
Thermal resistance, chip to ambient air
Therminal resistance, chip-substrate- reverse side
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤
≤
350
285
K/W
thJA
1)
R
thJSR
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 ˚C
V
V
I
V
(BR)DSS
GS(th)
V
50
-
-
GS
D
j
Gate threshold voltage
I = 1 mA
V
V
0.8
1.2
1.6
=
GS DS, D
Zero gate voltage drain current
DSS
V
V
V
= 50 V, V = 0 V, T = 25 ˚C
-
0.05
0.5
5
µA
DS
DS
DS
GS
j
= 50 V, V = 0 V, T = 125 ˚C
-
-
-
-
GS
j
= 30 V, V = 0 V, T = 25 ˚C
100
nA
nA
GS
j
Gate-source leakage current
= 20 V, V = 0 V
I
GSS
V
-
10
100
GS
DS
Drain-Source on-state resistance
R
Ω
DS(on)
V
V
= 10 V, I = 0.22 A
-
-
1.8
2.8
3.5
6
GS
GS
D
= 4.5 V, I = 0.22 A
D
Data Sheet
2
05.99
BSS 138
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Dynamic Characteristics
Transconductance
g
S
fs
V
≥
2 I
R I = 0.22 A
0.12
0.2
40
15
5
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
t
pF
iss
V
-
55
25
8
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
rss
V
-
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Turn-on delay time
ns
d(on)
V
R
= 30 V, V = 10 V, I = 0.29 A
GS D
DD
= 50
Ω
-
-
-
-
5
8
GS
Rise time
t
t
t
r
V
= 30 V, V = 10 V, I = 0.29 A
GS D
DD
GS
R
= 50
Ω
6
9
Turn-off delay time
d(off)
V
R
= 30 V, V = 10 V, I = 0.29 A
GS D
DD
= 50
Ω
12
15
16
20
GS
Fall time
f
V
R
= 30 V, V = 10 V, I = 0.29 A
GS D
DD
= 50
Ω
GS
Data Sheet
3
05.99
BSS 138
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
I
I
A
S
T = 25 ˚C
-
-
-
-
0.22
0.88
1.4
A
Inverse diode direct current,pulsed
SM
T = 25 ˚C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = 0.44 A, T = 25 ˚C
0.9
GS
F
j
Data Sheet
4
05.99
BSS 138
Power dissipation
Drain current
ƒ
ƒ
I = (T )
D A
P
= (T )
tot
A
≥
parameter: V
10 V
GS
0.40
W
0.24
A
0.20
ID
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
Ptot
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00
0
20
40
60
80 100 120
˚C
160
0
20
40
60
80 100 120
˚C
160
TA
TA
Safe operating area ID=f(VDS
)
Drain-source breakdown voltage
ƒ
parameter : D = 0.01, TC=25˚C
V
= (T )
(BR)DSS
j
60
V
58
57
56
55
54
53
52
51
50
49
48
47
V(BR)DSS
46
45
-60
-20
20
60
100
˚C
Tj
160
Data Sheet
5
05.99
BSS 138
Typ. output characteristics
Typ. drain-source on-resistance
ƒ(
ƒ(
I = V
)
R
= I )
D
DS
DS (on)
D
parameter: t = 80 µs , T = 25 ˚C
parameter: t = 80 µs, T = 25 ˚C
p j
p
j
0.50
A
11
Ptot
= 0W
l
k
j
a
b
c
d
e
i
g
h
f
Ω
V
[V]
GS
a
9
8
7
6
5
4
3
2
0.40
0.35
0.30
0.25
0.20
0.15
0.10
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
7.0
8.0
9.0
10.0
ID
RDS (on)
e
b
c
d
e
f
d
g
h
i
j
c
a
k
l
f
g
h
i
j
k
l
b
V
[V] =
b
GS
a
0.05
0.00
c
d
e
f
g
h
i
j
k
l
1
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
5.0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35
A
0.45
VDS
ID
Typ. transfer characteristics I = f(V
)
Typ. forward transconductance g = f (I )
fs D
D
GS
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
0.65
A
0.30
S
0.26
0.55
ID
gfs
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.02
0.00
0
1
2
3
4
5
6
7
8
V
VGS
10
0.00
0.10
0.20
0.30
0.40
A
ID
0.55
Data Sheet
6
05.99
BSS 138
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = 0.22 A, V = 10 V
parameter: V = V , I = 1 mA
GS DS D
D
GS
9
2.6
V
Ω
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
RDS (on)
VGS(th)
7
6
5
4
3
2
98%
typ
98%
typ
2%
1
0
0.2
0.0
-60
-20
20
60
100
˚C
Tj
160
-60
-20
20
60
100
˚C
Tj
160
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
ƒ
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 3
10 0
pF
A
C
IF
10 2
10 1
10 0
10 -1
10 -2
10 -3
Ciss
Coss
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
Crss
0
5
10
15
20
25
30
V
VDS
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
Data Sheet
7
05.99
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明