BSS159L6906 [INFINEON]

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3;


型号：	BSS159L6906
厂家：	Infineon
描述：	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3
文件：	总9页 (文件大小：308K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSS159N

SIPMOS^®Small-Signal-Transistor

Product Summary

V _DS

Features

Ω

• N-channel

• Depletion mode

R _DS(on),max

I _DSS,min

0.13

• dv /dt rated

• Available with V _GS(th)indicator on reel

• Pb-free lead-plating; RoHS compliant

SOT-23

Type

Package

Pb-free Tape and Reel Information

Marking

SGs

BSS159

PG-SOT-23 Yes

L6327: 3000 pcs/reel

L6906: 3000 pcs/reel sorted in V _GS(th)bands¹⁾

SGs

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

Continuous drain current

0.23

0.18

0.92

I _D,pulse

dv /dt

V _GS

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

I _D=0.23 A, V _DS=60 V,

di /dt =200 A/µs,

kV/µs

_j,max=150 °C

±20

Class 0

0.36

ESD sensitivity (HBM) as per

MIL-STD 883

P _tot

T _A=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

¹⁾see table on next page and diagram 11

Rev. 1.32

page 1

2006-12-11

BSS159N

Unit

Values

typ.

Parameter

Symbol Conditions

min.

max.

Thermal characteristics

R _thJA

minimal footprint

350 K/W

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSS

V _GS(th)

I _D(off)

_GS=-10 V, I _D=250 µA

_DS=3 V, I _D=26 µA

Drain-source breakdown voltage

Gate threshold voltage

-3.5

-2.8

-2.4

0.1

_DS=60 V,

_GS=-10 V, T _j=25 °C

Drain-source cutoff current

µA

_DS=60 V,

_GS=-10 V, T _j=125 °C

I _GSS

_GS=20 V, V _DS=0 V

_GS=0 V, V _DS=10 V

_GS=0 V, I _D=0.07 A

_GS=10 V, I _D=0.16 A

Gate-source leakage current

On-state drain current

Ω

I _DSS

130

R _DS(on)

Drain-source on-state resistance

3.9

1.7

3.5

|V _DS|>2|I _D|R _DS(on)max

I _D=0.16 A

g _fs

Transconductance

0.1

0.19

Threshold voltage V _GS(th)sorted in bands²⁾

V _GS(th)

V _DS=3 V, I _D=26 µA

-2.6

-2.75

-2.9

-2.4

-2.55

-2.7

-2.85

-3

-3.05

-3.2

²⁾Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific

band cannot be ordered separately.

Rev. 1.32

page 2

2006-12-11

BSS159N

Unit

Values

typ.

Parameter

Symbol Conditions

min.

max.

Dynamic characteristics

Input capacitance

Dynamic characteristics

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

8.3

3.9

3.1

2.9

_GS=-10 V, V _DS=25 V,

C _oss

C_rss

t _d(on)

t _r

f =1 MHz

5.9

4.7

4.4

_DD=25 V,

_GS=-3…7 V,

t _d(off)

t _f

Turn-off delay time

Fall time

I _D=0.16 A, R _G=6 Ω

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q _gs

0.14

0.7

0.21 nC

1.1

Q _gd

_DD=40 V, I _D=0.16 A,

_GS=-3 to 5 V

Q _g

2.2

2.9

V _plateau

Gate plateau voltage

-0.14

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

0.20

0.81

T _A=25 °C

I _S,pulse

_GS=-3 V, I _F=0.16 A,

V _SD

Diode forward voltage

0.79

1.2

T _j=25 °C

t _rr

Reverse recovery time

10.4

3.3

V _R=30 V, I _F=0.16 A,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

4.1

Rev. 1.32

page 3

2006-12-11

BSS159N

1 Power dissipation

2 Drain current

_tot=f(T _A)

I _D=f(T _A); V _GS≥10 V

0.4

0.24

0.2

0.3

0.2

0.1

0.16

0.12

0.08

0.04

120

160

120

160

_A[°C]

3 Safe operating area

4 Max. transient thermal impedance

_thJA=f(t _p)

I _D=f(V _DS); T _A=25 °C; D =0

parameter: D =t _p/T

10¹

10³

limited by on-state

resistance

0.5

10⁰

10^-1

10^-2

10²

100 µs

0.2

0.1

1 ms

0.05

0.02

10 ms

single pulse

0.01

100 ms

10¹

10^-3

10⁰

10¹

10²

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

10²

_DS[V]

_p[s]

Rev. 1.32

page 4

2006-12-11

BSS159N

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

_DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

-0.2 V

0.6

0.5

0 V

-0.1 V

0.2 V

0.5 V

0.1 V

10 V

1 V

0.5 V

0.4

0.3

0.2

0.1

0.2 V

0.1 V

0 V

-0.1 V

-0.2 V

1 V

10 V

0.1

0.2

0.3

_D[A]

0.4

0.5

0.6

_DS[V]

7 Typ. transfer characteristics

8 Typ. forward transconductance

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

g _fs=f(I _D); T _j=25 °C

0.6

0.5

0.4

0.3

0.2

0.1

0.3

0.25

0.2

0.15

0.1

0.05

-4

-3

-2

-1

_GS[V]

0.00

0.10

0.20

0.30

I_D[A]

Rev. 1.32

page 5

2006-12-11

BSS159N

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_GS(th)=f(T _j); V _DS=3 V; I _D=26 µA

_DS(on)=f(T _j); I _D=0.07 A; V _GS=0 V

parameter: I _D

-2

-2.4

-2.8

-3.2

-3.6

98 %

typ

98 %

2 %

typ

-4

-60

-20

100

140

180

-60

-20

T _j[°C]

100

140

180

T _j[°C]

11 Threshold voltage bands

12 Typ. capacitances

I _D=f(V _GS); V _DS=3 V; T _j=25 °C

C =f(V _DS); V _GS=-10 V; f =1 MHz

10²

Ciss

0.1

10¹

26 µA

Coss

0.01

Crss

10⁰

0.001

-3.5

-3

-2.5

-2

_GS[V]

_DS[V]

Rev. 1.32

page 6

2006-12-11

BSS159N

13 Forward characteristics of reverse diode

I _F=f(V _SD

15 Typ. gate charge

_GS=f(Q _gate); I _D=0.16 A pulsed

)

parameter: T _j

parameter: V _DD

0.2 VDS(max) 0.5 VDS(max)

150 °C, 98%

25 °C, 98%

25 °C

0.8 VDS(max)

150 °C

0.1

0.01

-1

-2

-3

-4

0.001

0.4

0.8

_SD[V]

1.2

_gate[nC]

16 Drain-source breakdown voltage

_BR(DSS)=f(T _j); I _D=250 µA

-60

-20

100

140

180

T _j[°C]

Rev. 1.32

page 7

2006-12-11

BSS159N

Package Outline:

Footprint:

Packaging:

Dimensions in mm

Rev. 1.32

page 8

2006-12-11

BSS159N

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions o

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values

stated herein and/or any information regarding the application of the device, Infineon Technologies hereby

disclaims any and all warranties and liabilities of any kind, including without limitation warranties o

non-infringement of intellectual property rights of any third party

Information

For further information on technology, delivery terms and conditions and prices please contact your neares

Infineon Technologies Office (www.infineon.com ).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in

question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

Rev. 1.32

page 9

2006-12-11

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