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BSZ028N04LS [INFINEON]

OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;
BSZ028N04LS
型号： BSZ028N04LS
厂家： Infineon    Infineon
描述：

OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。

开关 电机 服务器 转换器
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BSZ028N04LS  
MOSFET  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
TSDSON-8ꢀFLꢀ(S3O8)  
Features  
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
•ꢀN-channel  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀHigherꢀsolderꢀjointꢀreliabilityꢀwithꢀenlargedꢀsourceꢀinterconnection  
S 1  
S 2  
S 3  
G 4  
8 D  
7 D  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
6 D  
5 D  
VDS  
40  
V
RDS(on),max  
ID  
2.8  
114  
28  
mΩ  
A
QOSS  
nC  
nC  
QG(0V..10V)  
32  
Typeꢀ/ꢀOrderingꢀCode  
Package  
PG-TSDSON-8 FL  
Marking  
RelatedꢀLinks  
BSZ028N04LS  
028N04L  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
-
-
114  
72  
98  
62  
21  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=4.5ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=4.5V,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=60K/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
456  
100  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=20ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
63  
2.1  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=60ꢀK/W2)  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
1.2  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
2
K/W  
K/W  
-
-
Device on PCB,  
-
-
60  
6 cm2 cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
40  
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
1.2  
2
VGS=4.5V,ꢀTC=100ꢀ°C  
-
-
0.1  
10  
1
100  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
2.2  
2.7  
2.8  
3.8  
VGS=10ꢀV,ꢀID=20ꢀA  
VGS=4.5ꢀV,ꢀID=20ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
0.9  
1.8  
-
Ω
-
50  
100  
S
|VDS|>2|ID|RDS(on)max,ꢀID=20ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
2300 3220 pF  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
640  
52  
900  
104  
pF  
pF  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
5
-
-
-
-
ns  
ns  
ns  
ns  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
4
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
37  
4
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
5.5  
3.6  
5.1  
6.9  
32  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
-
7.1  
-
Qsw  
Gate charge total1)  
Qg  
45  
-
Gate plateau voltage  
Gate charge total1)  
Vplateau  
Qg  
2.4  
16  
22  
-
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge1)  
Qg(sync)  
Qoss  
13  
28  
39  
VDD=20ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
63  
456  
1
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
Reverse recovery time1)  
0.81  
24  
57  
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C  
VR=20ꢀV,ꢀIF=20A,ꢀdiF/dt=400ꢀA/µs  
VR=20ꢀV,ꢀIF=20A,ꢀdiF/dt=400ꢀA/µs  
48  
-
ns  
nC  
Reverse recovery charge  
Qrr  
1) Defined by design. Not subject to production test  
Final Data Sheet  
5
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
70  
120  
60  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
0
40  
80  
120  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
0.5  
102  
101  
100  
10-1  
100  
1 µs  
10 µs  
0.2  
0.1  
100 µs  
0.05  
1 ms  
10 ms  
DC  
10-1  
0.02  
0.01  
single pulse  
10-2  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
160  
7
5 V  
10 V  
4 V  
140  
120  
100  
80  
6
4.5 V  
3.5 V  
2.8 V  
3 V  
3.2 V  
3.2 V  
5
4
3
2
1
0
3 V  
3.5 V  
4 V  
5 V  
4.5 V  
60  
2.8 V  
10 V  
40  
20  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0
40  
80  
120  
160  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
160  
160  
120  
80  
120  
80  
40  
0
40  
25 °C  
150 °C  
0
0
1
2
3
4
0
10  
20  
30  
40  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
6
2.5  
5
4
2.0  
1.5  
1.0  
0.5  
0.0  
max  
3
typ  
2
1
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=20ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
150 °C  
150 °C, max  
Ciss  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
0
10  
20  
30  
40  
0.0  
0.5  
1.0  
1.5  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
20 V  
10  
8
8 V  
32 V  
25 °C  
101  
6
100 °C  
125 °C  
4
2
100  
0
100  
101  
102  
103  
0
10  
20  
30  
40  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=20ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
46  
44  
42  
40  
38  
36  
34  
32  
30  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TSDSON-8-U03  
REVISION: 03  
DATE: 20.10.2020  
MILLIMETERS  
DIMENSIONS  
MIN.  
MAX.  
1.10  
0.44  
A
b
0.90  
0.24  
c
(0.20)  
D
3.20  
2.19  
1.54  
3.20  
2.01  
0.10  
3.40  
2.39  
1.74  
3.40  
2.21  
0.30  
D1  
D2  
E
E1  
E2  
e
0.65  
0.06  
L
0.30  
0.40  
0.50  
0.50  
0.60  
0.70  
L1  
L2  
aaa  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.3,ꢀꢀ2020-12-23  
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV  
BSZ028N04LS  
RevisionꢀHistory  
BSZ028N04LS  
Revision:ꢀ2020-12-23,ꢀRev.ꢀ2.3  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.1  
2.2  
2.3  
Insert max values and update footnotes  
Update current rating  
2016-06-09  
2020-08-14  
2020-12-23  
Update package drawing  
Trademarks  
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Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG  
AllꢀRightsꢀReserved.  
LegalꢀDisclaimer  
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  
(“Beschaffenheitsgarantie”)ꢀ.  
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.3,ꢀꢀ2020-12-23  

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