BSZ12DN20NS3 G [INFINEON]

英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。;


型号：	BSZ12DN20NS3 G
厂家：	Infineon
描述：	英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。电机驱动转换器
文件：	总9页 (文件大小：571K)
中文：	中文翻译
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Type

BSZ12DN20NS3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V_DS

200

125

11.3

• Optimized for dc-dc conversion

• N-channel, normal level

R_DS(on),max

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Low on-resistance R _DS(on)

PG-TSDSON-8

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSZ12DN20NS3 G

PG-TSDSON-8

12DN20N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

11.3

8.0

Pulsed drain current²⁾

I _D,pulse

E _AS

I _D=5.7 A, R _GS=25 W

Avalanche energy, single pulse

kV/µs

Reverse diode dv /dt

dv /dt

V _GS

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

¹⁾J-STD20 and JESD22

²⁾see figure 3

Rev. 2.2

page 1

2011-07-14

BSZ12DN20NS3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

2.5

K/W

Thermal resistance,

junction - ambient

6 cm²cooling area³⁾

R _thJA

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=25 µA

Drain-source breakdown voltage

Gate threshold voltage

200

V _DS=160 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

V _DS=160 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

100 nA

R _DS(on)V _GS=10 V, I _D=5.7 A

108

1.9

125

R _G

|V _DS|>2|I _D|R _DS(on)max

I _D=5.7 A

g _fs

Transconductance

³⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 2.2

page 2

2011-07-14

BSZ12DN20NS3 G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C _iss

510

5.1

680 pF

V _GS=0 V, V _DS=100 V,

f =1 MHz

C _oss

C _rss

t _d(on)

t _r

V _DD=100 V,

V _GS=10 V, I _D=5.7 A,

R _G=1.6 W

t _d(off)

t _f

Turn-off delay time

Fall time

Gate Charge Characteristics⁴⁾

Gate to source charge

Gate to drain charge

Switching charge

Q _gs

2.3

1.1

1.8

6.5

4.5

Q _gd

V _DD=100 V, I _D=5.7 A,

V _GS=0 to 10 V

Q _sw

Q _g

Gate charge total

8.7

V _plateau

Q _oss

Gate plateau voltage

Output charge

V _DD=100 V, V _GS=0 V

Reverse Diode

I _S

Diode continous forward current

Diode pulse current

11.3

T _C=25 °C

I _S,pulse

V _GS=0 V, I _F=11.3 A,

T _j=25 °C

V _SD

Diode forward voltage

1.2

t _rr

Reverse recovery time

V _R=100 V, I _F=I _S,

di _F/dt =100 A/µs

Q _rr

Reverse recovery charge

212

⁴⁾See figure 16 for gate charge parameter definition

Rev. 2.2

page 3

2011-07-14

BSZ12DN20NS3 G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

120

160

120

160

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10²

10¹

10⁰

10^-1

10¹

1 µs

10 µs

100 µs

0.5

10⁰

1 ms

0.2

0.1

10 ms

0.05

0.02

0.01

single pulse

10^-1

10⁰

10¹

10²

10³

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

Rev. 2.2

page 4

2011-07-14

BSZ12DN20NS3 G

5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

200

160

120

10 V

6 V

5.5 V

7 V

5 V

5.5 V

10 V

6 V

8 V

5 V

4.5 V

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

150 °C

25 °C

I_D[A]

V_GS[V]

Rev. 2.2

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2011-07-14

BSZ12DN20NS3 G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

V _GS(th)=f(T _j); V _GS=V _DS

parameter: I _D

R _DS(on)=f(T _j); I _D=5.7 A; V _GS=10 V

350

300

250

200

3.5

250 µA

2.5

25 µA

98 %

150

1.5

typ

100

0.5

-60

-20

100

140

180

-60

-20

T_j[°C]

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10³

100

Ciss

25 °C

Coss

10²

150 °C, 98%

150 °C

25 °C, 98%

10¹

Crss

10⁰

0.1

V_DS[V]

120

160

0.5

1.5

V_SD[V]

Rev. 2.2

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2011-07-14

BSZ12DN20NS3 G

13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=5.7 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 W

parameter: T _j(start)

160 V

25 °C

100 V

100 °C

125 °C

40 V

0.1

100

1000

Q_gate[nC]

t_AV[µs]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

230

220

210

200

190

180

V _GS

Q_g

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

-60

-20

100

140

180

T_j[°C]

Rev. 2.2

page 7

2011-07-14

BSZ12DN20NS3 G

Package Outline:PG-TSDSON-8

Rev. 2.2

page 8

2011-07-14

BSZ12DN20NS3 G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

Rev. 2.2

page 9

2011-07-14

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