BSZ340N08NS3 G [INFINEON]
OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;
| 型号： | BSZ340N08NS3 G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。 通信 服务器 |
| 文件： | 总9页 (文件大小：652K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ340N08NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS
80
34
23
V
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
RDS(on),max
ID
mW
A
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
BSZ340N08NS3 G
Package
Marking
PG-TSDSON-8
340N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
23
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
A
15
V GS=10 V, T A=25 °C,
R thJA=60 K/W2)
6
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
92
20
Avalanche energy, single pulse4)
Gate source voltage
I D=12 A, R GS=25 W
mJ
V
V GS
±20
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.3
page 1
2013-02-06
BSZ340N08NS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
32
W
T A=25 °C,
R thJA=60 K/W2)
2.1
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Device on PCB
-
-
-
-
-
-
3.9
-
K/W
R thJA
minimal footprint
6 cm2 cooling area2)
60
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=12 µA
Drain-source breakdown voltage
Gate threshold voltage
80
2
-
-
V
2.8
3.5
V DS=80 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
5
µA
V DS=80 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
10
27
38
1
100 nA
R DS(on) V GS=10 V, I D=12 A
V GS=6 V, I D=6 A
R G
Drain-source on-state resistance
34
66
-
mW
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=12 A
,
g fs
Transconductance
8
16
-
S
Rev. 2.3
page 2
2013-02-06
BSZ340N08NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
470
130
7
630 pF
V GS=0 V, V DS=40 V,
f =1 MHz
C oss
Crss
t d(on)
t r
170
-
8
-
-
-
-
ns
3
V DD=40 V, V GS=10 V,
I D=12 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
11
2
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
2.4
1.3
1.5
2.6
6.8
5.2
9
-
-
nC
Q g(th)
Q gd
-
V DD=40 V, I D=12 A,
V GS=0 to 10 V
Q sw
-
Q g
Gate charge total
9.1
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=40 V, V GS=0 V
12
nC
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
23
92
A
V
T C=25 °C
I S,pulse
V GS=0 V, I F=12 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
t rr
Reverse recovery time
-
-
43
41
-
-
ns
V R=40 V, I F=12A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.3
page 3
2013-02-06
BSZ340N08NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
30
20
10
0
25
20
15
10
5
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC=f(t p)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
parameter: D =t p/T
102
10
1 µs
limited by on-state
resistance
0.5
10 µs
101
1
0.2
100 µs
0.1
0.05
0.02
0.1
100
0.01
1 ms
single pulse
10 ms
DC
0
0
0
0
0
0
1
0.01
10-1
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
102
tp [s]
VDS [V]
Rev. 2.3
page 4
2013-02-06
BSZ340N08NS3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
100
80
60
40
20
0
70
10 V
9 V
5 V 5.5 V
8 V
6 V
7 V
8 V
60
50
40
30
20
7 V
6 V
9 V
5.5 V
10 V
5 V
4.5 V
0
1
2
3
4
5
0
20
40
60
80
100
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
30
25
20
15
10
5
40
30
20
10
0
25 °C
150 °C
0
0
1
2
3
4
5
6
7
0
10
20
30
40
50
VGS [V]
ID [A]
Rev. 2.3
page 5
2013-02-06
BSZ340N08NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=12 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
60
55
50
45
40
4
3
120 µA
12 µA
max
35
2
1
0
30
25
20
15
10
typ
-60
-20
20
60
Tj [°C]
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
103
100
Ciss
25 °C
150 °C
150°C,max
Coss
102
101
100
10
25°C,max
Crss
1
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDS [V]
VSD [V]
Rev. 2.3
page 6
2013-02-06
BSZ340N08NS3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=12 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
40 V
64 V
16 V
10
6
25 °C
100 °C
125 °C
4
2
1
0
0.1
1
10
tAV [µs]
100
1000
0
1
2
3
4
5
6
7
8
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
90
80
70
60
50
40
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.3
page 7
2013-02-06
BSZ340N08NS3 G
PG-TSDSON-8
Rev. 2.3
page 8
2013-02-06
BSZ340N08NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.3
page 9
2013-02-06
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