BTS3011TE_技术文档

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

1

Overview

Features

•

Single channel device

Digital Feedback

Current limitation trigger concept

3.3 and 5 V compatible logic inputs

Electrostatic discharge protection (ESD)

Green Product (RoHS compliant)

AEC Qualified

Applications

•

Suitable for resistive, inductive and capacitive loads

Replaces electromechanical relays, fuses and discrete circuits

Most suitable for inductive loads as well as loads with inrush currents

Description

The BTS3011TE is a 11 mΩ single channel Smart Low-Side Power Switch with in a PG-TO252-5 package

providing embedded protective functions. The power transistor is built by an N-channel vertical power

MOSFET.

The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V

automotive and industrial applications.

Type

Package

Marking

BTS3011TE

PG-TO252-5

S3011TE

Table 1

Product Summary

Operating voltage range

Maximum battery voltage

Operating supply voltage range

Maximum input voltage

V_OUT

V_BAT(LD)

V_DD

3 .. 28 V

40 V

3.0 .. 5.5 V

5.5 V

V_IN

Maximum On-State resistance at T_j= 150 °C, V_DD= 5 V, V_IN= 5 V R_{DS(ON)_150}

22 mΩ

10 A

Nominal load current

I_L(NOM)

I_{L(LIM)_TRIGGER}

Minimum current limitation trigger level

70 A

Datasheet

www.infineon.com/hitfet

1

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Overview

Table 1

Product Summary (cont’d)

Minimum current limitation level

I_L(LIM)

35 A

3 µA

6 µA

Maximum OFF state load current at T_J≤ 85 °C

Maximum stand-by supply current at T_J≤ 85 °C

I_{L(OFF)_85}

I_{DD(OFF)_85}

Diagnostic Functions

•

Short circuit to battery

Over temperature

Stable latching diagnostic signal

Protection Functions

•

Over temperature shutdown with delayed auto restart

Active clamp over voltage protection of the OUTput

Current limitation with current limitation trigger

Enhanced short circuit protection

Detailed Description

The device is able to switch all kind of resistive, inductive and capacitive loads, limited by maximum clamping

energy and maximum current capabilities.

The BTS3011TE offers dedicated ESD protection on the IN, VDD and STATUS pin referring to the Ground pin,

as well as an over voltage clamping of the Drain/OUT to Source/GND.

The over voltage protection gets activated during inductive turn off conditions or other over voltage events

(such as load dump). The power MOSFET is limiting the drain-source voltage, if it rises above the V_OUT(CLAMP).

The over temperature protection prevents the device from overheating due to overload and/or bad cooling

conditions.

The BTS3011TE has a delayed auto restart thermal shut-down function. The device will turn on again, If the

input pin is still high after a delayed time t_D(RESTART)considering the junction temperature has dropped below

the thermal hysteresis.

Datasheet

2

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Table of Contents

1

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2

3

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Assignment BTS3011TE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1

3.2

3.3

4

4.1

4.2

4.3

4.3.1

4.3.2

General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

PCB set up (from THB report) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5

Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Resistive Load Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Reverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

5.1

5.2

5.3

5.3.1

5.3.2

5.4

5.5

6

Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Over Voltage Clamping on OUTput . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Overcurrent Limitation / Short Circuit Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

6.1

6.2

6.3

6.4

7

7.1

7.2

Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Functional Description of the STATUS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

8

Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Supply Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Undervoltage Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

8.1

8.1.1

8.2

8.3

9

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

9.1

9.2

9.3

9.4

10

Characterisation Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Supply and Input Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

10.1

10.2

10.3

Datasheet

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Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

11

Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

11.1

Design and Layout Recommendations/Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Package Outlines BTS3011TE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

12

13

Datasheet

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Rev. 1.0

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HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Block Diagram

2

Block Diagram

VDD

OUT

Supply

Unit

Over

Voltage

Over-

temperature

Protection

Gate

Driving

Unit

IN

Status

Feedback

ESD

Protection

STATUS

Short circuit

detection /

Current

limitation

GND

BlockDiagram_5pin.emf

Figure 1

Block Diagram

Datasheet

5

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Pin Configuration

3

Pin Configuration

3.1

Pin Assignment BTS3011TE

(top view )

5

4

3

2

1

GND

STATUS

OUT

VDD

IN

OUT

6 (Tab)

PinConfig_DPAK5.emf

Figure 2

Pin Configuration DPAK5

3.2

Pin Definitions and Functions

Table 2

1

Symbol Function

IN

Input pin

2

VDD

OUT

5 V supply pin

3,6

4

Drain, Load connection for power DMOS

STATUS Open-drain status feedback (low active)

GND Ground, Source of power DMOS

5

3.3

Voltage and Current Definition

Figure 3 shows all external terms used in this data sheet, with associated convention for positive values.

Datasheet

6

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Pin Configuration

V_BAT

V_DD

I_DD

R_STATUS

Z_L

VDD

I_STATUS

STATUS

IN

I_L, I_D

OUT

I_IN

V_OUT,

V_DS

GND

V_DD

V_STATUS

V_IN

GND

Terms_5pin.emf

Figure 3

Naming Definition of electrical parameters

Datasheet

7

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Table 3

Absolute Maximum Ratings¹⁾

T_j= -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise

specified)

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Voltages

Supply voltage

Output voltage

V_DD

-0.3

–

5.5

40

32

V

–

P_4.1.1

P_4.1.2

P_4.1.3

V_OUT

internally clamped

1)

Battery voltage for short

circuit protection

V_BAT(SC)

–

l = 0 or 5 m

R

_SC= 30 mΩ + R_Cable

R_Cable= l * 16 mΩ/m

_SC= 5 µH + L_Cable

L

L_Cable= l * 1 µH/m

2)

Battery voltage for load

dump protection

(V_BAT(LD)= V_A+ V_Swith

V_A=13.5 V)

V_BAT(LD)

–

40

V

P_4.1.4

R_i= 2 Ω;

R_Load= 2.2 Ω;

t_d=400 ms;

suppressed pulse

Input Pin

Input voltage

Status Pin

V_IN

-0.3

–

5.5

V

A

–

P_4.1.8

P_4.1.9

P_4.1.12

P_4.1.13

Status voltage

Power Stage

Load current

Energies

V_STATUS

|I_L|

5.5

I_{L(LIM)_TRIGGER}

Unclamped single inductive E_AS

energy single pulse

–

390

mJ I_L(0)= I_L(NOM)

V_BAT= 13.5 V

T_J(0)= 150°C

Unclamped repetitive

inductive energy pulse with

100k cycles

E_AR(100k)

–

290

mJ I_L(0)= I_L(NOM)

V_BAT= 13.5 V

P_4.1.15

T_j(0)= 105°C

Temperatures

Operating temperature

Storage temperature

ESD Susceptibility

T_j

-40

-55

–

+150

°C

–

P_4.1.17

P_4.1.18

T_stg

Datasheet

8

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

General Product Characteristics

Table 3

Absolute Maximum Ratings¹⁾(cont’d)

T_j= -40°C to +150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise

specified)

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

ESD susceptibility (all pins) V_ESD

-2

-4

–

2

4

kV

HBM³⁾

P_4.1.19

P_4.1.20

ESD susceptibility OUT pin V_ESD

vs. GND

ESD susceptibility

V_ESD

-750

–

750

V

CDM⁴⁾

P_4.1.21

1) Not subject to production test, specified by design.

2) V_BAT(LD)is setup without the DUT connected to the generator per ISO7637-1;

R_iis the internal resistance of the load dump test pulse generator;

t_dis the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2.

3) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF)

4) ESD susceptibility, Charged Device Model “CDM” ESDA STM5.3.1 or ANSI/ESD S.5.3.1

Notes

1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation

4.2

Functional Range

Table 4

Functional Range¹⁾

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Supply Voltage Range for Nominal

Operation

V_DD(NOM)3.0 5.0 5.5

V

P_4.2.1

P_4.2.2

Supply current continuous ON

operation

I_DD(ON)

–

1

6

mA

–

Standby supply current (ambient)

I_DD(OFF)

–

6

1.5

µA T_j≤ 85°C

P_4.2.4

P_4.2.5

Battery Voltage Range for Nominal

Operation

V_BAT(NOR)

13.5 18

V

–

Extended Battery Voltage Range for

Operation

V_BAT(EXT)

0

–

32

V

parameter

deviations possible

P_4.2.6

1) Not subject to production test, specified by design.

Note:

Within the functional range the IC operates as described in the circuit description. The electrical

characteristics are specified within the conditions given in the related electrical characteristics

table.

Datasheet

9

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

General Product Characteristics

4.3

Thermal Resistance

Note:

This thermal data was generated in accordance with JEDEC JESD51 standards.

For more information, go to www.jedec.org.

Table 5

Thermal Resistance

Parameter

Symbol

Values

Typ.

2

Unit Note or

Test Condition

Number

Min.

Max.

1) 2)

1) 3)

1) 4)

Junction to Solder Point

R_thJSP

–

K/W

P_4.3.1

P_4.3.2

P_4.3.3

Junction to Ambient (2s2p) R_thJA(2s2p)

25

Junction to Ambient

R_thJA(1s0p)

38

(1s0p+600mm²Cu)

1) Not subject to production test, specified by design.

2) Specified RthJSP value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient

temperature). Tc = 85°C. Device is loaded with 1 W power.

3) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product

(Chip and Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm

Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. Ta = 85°C.

Device is loaded with 1 W power.

4) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The product

(Chip and Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of

600mm2 and 70 µm thickness. Ta = 85°C. Device is loaded with 1 W power

Datasheet

10

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

General Product Characteristics

4.3.1

PCB set up (from THB report)

The following PCB set up was implemented to determine the transient thermal impedance.

70µm modelled (traces)

35µm, 100% metalization*

70µm, 5% metalization*

Figure 4

Cross section JEDEC 2s2p.

70µm modelled (traces, cooling area)

70µm; 5% metalization*

Figure 5

Cross section JEDEC 1s0p.

Detail: Solder area

JEDEC 1s0p / Footprint

JEDEC 2s2p

JEDEC1s0p / 600 mm²

Figure 6

PCB layout.

Datasheet

11

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

General Product Characteristics

4.3.2

Transient Thermal Impedance

Figure 7

Typical transient thermal impedance Z_thJA= f(t_p), T_a= 85 °C

Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The

product (Chip and Package) was simulated on a 76.2 x 114.3 x 1.5 mm3 board with 2 inner

copper layers (2 x 70 um Cu, 2 x 35 um Cu). Where applicable a thermal via array under the

exposed pad contacted the first inner copper layer. Device is dissipating 1 W power.

Figure 8

Typical transient thermal impedance Z_thJA= f(t_p), T_a= 85°C

Value is according to Jedec JESD51-3 at natural convection on FR4 1s0p board. Device is

dissipating 1 W power.

Datasheet

12

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Power Stage

5

Power Stage

5.1

Output On-state Resistance

The on-state resistance depends on the supply voltage as well as on the junction temperature T_J. Figure 9

shows this dependencies in terms of temperature and voltage for the typical on-state resistance R_DS(ON). The

behavior in reverse polarity is described in chapter“Reverse Current Capability” on Page 16.

Figure 9

Typical On-State Resistance,

_DS(ON)= f(T_J);

V_DD= 5 V, 3 V; V_IN= high

R

A high signal at the input pin causes the power DMOS to switch ON with a dedicated slope.

To achieve the specified R_DS(ON)and switching speed, a 5 V supply is required.

Datasheet

13

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Power Stage

5.2

Resistive Load Output Timing

Figure 10 shows the typical timing when switching a resistive load.

V_IN

V_IN(H)

V_IN(L)

t

V_OUT

V_BAT

90 %

-(dV/dt)_ON

(dV/dt)_OFF

50 %

10 %

t_DON

t_F

t_DOFF

t_R

t_OFF

Figure 10 Definition of Power Output Timing for Resistive Load

t

Switching.emf

t_ON

5.3

Inductive Load

5.3.1

Output Clamping

When switching off inductive loads with low side switches, the drain-source voltage V_OUTrises above battery

potential, because the inductance intends to continue driving the current. To prevent unwanted high voltages

the device has a voltage clamping mechanism to keep the voltage at V_OUT(CLAMP). During this clamping

operation mode the device heats up as it dissipates the energy from the inductance. Therefore the maximum

allowed load inductance is limited. See Figure 11 and Figure 12 for more details.

V_BAT

Z_L

I_L

OUT (DMOS Drain)

V_OUT

GND ( DMOS Source)

I_GND

Figure 11 Output Clamp Circuitry

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Smart Low-Side Power Switch

Power Stage

V_IN

t

I_OUT

t

V_OUT

V_OUT(CLAMP)

V_BAT

t

Figure 12 Switching an Inductive Load

Note:

Repetitive switching of inductive load by VDD instead of using the input is a not recommended

operation and may affect the device reliability and reduce the lifetime.

5.3.2

Maximum Load Inductance

While demagnetization of inductive loads, energy has to be dissipated in the BTS3011TE.

This energy can be calculated by the following equation:

⎡

⎢

⎤

⎥

⎛

⎜

⎝

⎞

⎟

⎠

V_BAT−V_OUT(CLAMP)

R_L× I_L

L

⎜

E =V_OUT(CLAMP)

×

×ln 1−

+ I_L

×

(5.1)

(5.2)

R_L

V_BAT−V_OUT(CLAMP)

R_L

⎢

⎣

⎥

⎦

Following equation simplifies under assumption of R_L= 0

⎛

⎜

⎞

⎟

⎠

1

V_BAT

2

⎜

E = LI_L× 1−

2

V_BAT−V_OUT(CLAMP)

⎝

Figure 13 shows the inductance / current combination the BTS3011TE can handle.

For maximum single avalanche energy please also refer to E_ASparameter in Page 8

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Smart Low-Side Power Switch

Power Stage

Figure 13 Maximum load inductance for single pulse

L = f(I_L);

T_J(0)= 150°C; V_BAT= 13.5 V

5.4

Reverse Current Capability

A reverse battery situation means the OUT pin is pulled below GND potential to -V_BATvia the load Z_L.

In this situation the load is driven by a current through the intrinsic body diode of the BTS3011TE and all

protection, such as current limitation, over temperature or over voltage clamping, are not active.

OT is active in inverse current if DMOS is ON

In certain application case (for example in a bridge or half-bridge configuration) the intrinsic reverse body

diode is used for freewheeling of an inductive load. In this case the device is still supplied but an inverse

current is flowing from GND to OUT(drain) and the OUT will be pulled below GND.

In inverse or reverse operation via the reverse body diode, the device is dissipating a power loss which is

defined by the driven current and the voltage drop on the body diode -VDS.

The BTS3011TE is capable of switching ON during inverse current by setting the IN high. In this condition, the

over temperature is active.

5.5

Characteristics

Please see “Power Stage” on Page 24 for electrical characteristic table.

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Smart Low-Side Power Switch

Protection Functions

6

Protection Functions

The device provides embedded protection functions. Integrated protection functions are designed to prevent

IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside”

normal operation. Protection functions are not to be used for continuous or repetitive operation.

6.1

Over Voltage Clamping on OUTput

The BTS3011TE is equipped with a voltage clamp circuitry that keeps the drain-source voltage V_DSat a certain

level V_OUT(CLAMP). The over voltage clamping is overruling the other protection functions. Power dissipation has

to be limited to not exceed the maximum allowed junction temperature.

This function is also used in terms of inductive clamping. Please see also “Output Clamping” on Page 14 for

more details.

6.2

Thermal Protection

The device is protected against over temperature due to overload and/or bad cooling conditions by an

integrated temperature sensor. The thermal protection is available if the device is active. .

The device incorporates an absolute (T_J(SD)) and a dynamic temperature limitation (ΔT_J(SW)). Triggering one of

them will cause the output to switch off.

The BTS3011TE has a delayed thermal-restart function. If the input (IN) is still high the device will turn on again

after a delayed time t_D(RESTART)considering the junction temperature has dropped below the thermal

hysteresis.

Absolute over temperature

shutdown

Dynamic

thermal shutdown

Auto restart

no overload

Auto restart

IN

V_{IN (H)}

0

t

T_j_(DMOS)

T_j(SD)

ΔT_{j(SD)_HY}

ΔT_j(SW)

T_a

t

V_OUT

V_{BA T}

t

Thermal_faul t_restart

t_{D(RES TART)}

Figure 14 Thermal protective switch OFF scenario with thermal restart

Note:

For better understanding, the time scale is not linear. The real timing of this drawing is application

dependant and cannot be described.

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Smart Low-Side Power Switch

Protection Functions

6.3

Overcurrent Limitation / Short Circuit Behavior

This device is providing a smart overcurrent limitation intended to provide protection against short circuit

conditions while allowing also load inrush currents higher than the current limitation level. To achieve this,

the device has a current limitation level I_L(LIM)which is triggered by a higher trigger level I_{L(LIM)_TRIGGER}

.

The condition short circuit is an overload condition on the device.

If the load current I_Lreaches the current limitation trigger level I_{L(LIM)_TRIGGER}the internal current limitation will

be activated and the device limits the current to a lower value I_L(LIM). The device then starts heating up. When

the thermal shutdown temperature T_J(SD)is reached, the device turns off. The time from the beginning of

current limitation until the over temperature switch off depends strongly on the cooling conditions.

If input is still high, the device will turn on again after a delayed time t_D(RESTART)considering the junction

temperature has dropped below the thermal hysteresis. The current limitation trigger is a latched signal. It will

be only reset by input (IN) pin low and resetting the latch fault signal (STATUS pin = high. See Chapter 7

Diagnostics) at the same time. This means if the input stays high all the time during short circuit, the current

will be limited to I_L(LIM)during the following pulses (while on thermal restart). It also means that the output

current remains limited to the current limitation level I_L(LIM)as long as the current limitation trigger is not reset.

Figure 15 shows this behavior.

Occurrenceof shortcircuit

Reset current limit trigger by

Drain currenttriggering I_{L(LI M)_TRIGG ER}-> current limitto I_{L(LI M)}

„ST ATUS=high“ and

„IN=low“ and

„DMOS off (I_L=0A)“

Absolute over temperatureshutdown

Auto restart;

limited to current limitation level

Restar t i nto

nor mal l oad condi ti on

Restar t i nto short

circuit

IN

V_{IN (H)}

0

t

I_L

V_BAT/Z_sc

I_{L(LIM )_T RI GGE R}

I_L(LIM)

t

T_j_(DMOS)

T_j(SD)

ΔT_{j(SD)_HY}

T_a

V_{ST ATU S}

t

H

t_RESET

t_{D(RES TART)}

Figure 15 Short circuit protection via current limitation and thermal switch off, with latched fault

signal on STATUS-pin

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Smart Low-Side Power Switch

Protection Functions

Note:

For better understanding, the time scale is not linear. The real timing of this drawing is application

dependant and cannot be described.

Behavior with overload current below current limitation trigger level

The lower current limitation level I_L(LIM)will be also triggered by a thermal shutdown. This could be the case in

terms of overload with a current still below the current limitation trigger level (I_L< I_{L(LIM)TRIGGER}).

Occurrenceof overload (belowcurrent limitation trigger level)

Reset current limit trigger by

„ST ATUS=high“ and

„IN=low“ and

Absolute over temperatureshutdown

„DMOS off (I_L=0A)“

Auto restart;

Ther mal r es tart i nto

limitedto current limitationlevel

normal load condition

IN

V_{IN (H)}

0

t

I_L

I_{L(LIM )_T RI GGE R}

V_BAT/Z_sc

I_L(LIM)

T_j_(DMOS)

T_j(SD)

ΔT_{j(SD)_HY}

T_a

t

V_{ST ATU S}

H

t_RESET

t

t_{D(RES TART)}

Figure 16 Example of overload behavior with thermal shutdown

Note:

For better understanding, the time scale is not linear. The real timing of this drawing is application

dependant and cannot be described.

6.4

Characteristics

Please see “Protection” on Page 26 for electrical characteristic table.

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Smart Low-Side Power Switch

Diagnostics

7

Diagnostics

The BTS3011TE provides a latching digital fault feedback signal on the STATUS pin triggered by an over

temperature shutdown.

7.1

Functional Description of the STATUS Pin

The BTS3011TE provides digital status information via the STATUS pin to give an alarm feedback to a

connected microcontroller. Please see Figure 17 “Feedback and control of STATUS pin” on Page 20

Normal operation mode

In normal operation (no fault is detected) the STATUS pin’s logic is set ”high”. It is pulled up via an external

Resistor (R_STATUS). Internally it is connected to an open drain MOSFET through an internal resistor.

Fault operation

In case of a thermal shutdown (fault), an internal MOSFET connected to the STATUS pin, pulls its voltage down

to GND, providing a “low” level signal to the microcontroller. Fault mode operation remains active

independent from the input pin state or internal restarts until it is reset.

Reset latch fault signal (external pull up)

To reset the latch fault signal of the BTS3011TE, the STATUS pin has to be pulled up to 5 V (recommended V_DD).

Resetting the fault signal will not reset the current limitation trigger signal. To do so, the INPUT pin has to be

set in logic “low” at the same time the STATUS pin is set “high”. In this case, the fault latch signal and the

current limitation trigger will be reset (assuming the temperature has dropped below ΔT_{J_HYS}). Please refer to

Figure 15 and Figure 16.

V_DD

V_BAT

I_DD

R_STATUS

Z_L

VDD

STATUS

I/O

I_L

Micro

controller

OUT

V_OUT

IN

I/O

GND

I_GND

GND

feedback.emf

Figure 17 Feedback and control of STATUS pin

For recommended values of external components please see “Application Information” on Page 40

7.2

Characteristics

Please see “Diagnostics” on Page 27 for electrical characteristic table.

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Smart Low-Side Power Switch

Supply and Input Stage

8

Supply and Input Stage

8.1

Supply Circuit

The supply pin V_DDis protected against ESD pulses as shown in Figure 18.

The device supply is not internal regulated but directly taken from a external supply. Therefore a reverse

polarity protected and buffered 5 V (or 3.3 V) voltage supply is required. To achieve the specified R_DS(ON)and

switching speed a 5 V supply is required.

The device shall be supplied via the V_DDpin before applying an input signal V_INto ensure the correct

functionality of the device.

3.0V .. 5.5V

V_DD

Logic &

Driver

ESD

protection

GND

Supply_Stage.emf

Figure 18 Supply Circuit

8.1.1

Undervoltage Shutdown

In order to ensure a stable and defined device behavior under all allowed conditions the supply voltage V_DDis

monitored.

The output switches off, if the supply voltage V_DDdrops below the switch-off threshold V_DD(TH). In this case also

all latches will be reset. The device functions are only given for supply voltages above the supply voltage

threshold V_DD(SD)MAX. There is no failure feedback ensured for V_DD< V_DD(SD)

.

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Smart Low-Side Power Switch

Supply and Input Stage

8.2

Input Circuit

Figure 19 shows the input circuit of the BTS3011TE. Due to an internal pull-down it is ensured that the device

switches off in case of open input pin. A Zener structure protects the input circuit against ESD pulses. As the

BTS3011TE has a supply pin, the R_DS(ON)of the power MOS is independent of the voltage on the IN pin (assumed

V_DDis sufficient).

Logic

ON/OFF

R_IN

IN

I_IN

ESD

R_IN(GND)

V_uC

V_IN

GND

Input.emf

Figure 19 Simplified INput circuitry

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Smart Low-Side Power Switch

Supply and Input Stage

8.3

Characteristics

Please see “Supply and Input Stage” on Page 28 for electrical characteristic table.

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Smart Low-Side Power Switch

Electrical Characteristics

9

Electrical Characteristics

Note:

Characteristics show the deviation of parameter at given input voltage and junction temperature.

Typical values show the typical parameters expected from manufacturing and in typical application

condition.

All voltages and currents naming and polarity in accordance to

Figure 3 “Naming Definition of electrical parameters” on Page 7

9.1

Power Stage

Please see Chapter “Power Stage” on Page 13 for parameter description and further details.

Table 6 Electrical Characteristics: Power Stage

T_j= -40°C to +150°C, V_DD= 3.0 V to 5.5 V, V_BAT= 6 V to 18 V, all voltages with respect to ground, positive current

flowing into pin (unless otherwise specified)

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Power Stage - Static Characteristics

On-State resistance

at 25°C

R_{DS(ON)_25}

–

10.7

19

10

–

mΩ I_L= I_L(NOM)

_DD= 5 V;

;

P_9.1.1

P_9.1.2

P_9.1.7

P_9.1.8

V

T_J= 25°C

On-State resistance

at 150°C

R_{DS(ON)_150}

22

–

mΩ I_L= I_L(NOM)

V_DD= 5 V;

;

T_j= 150°C

1)

Nominal load current

I_L(NOM)

A

T_J< 150°C;

V_DD= 5 V;

2)

OFF state load current, Output

leakage current

I_{L(OFF)_85}

3

µA

V_OUT= V_BAT

V_IN= 0 V;

;

V

_DD= 5 V;

T_J≤ 85°C

OFF state load current, Output

leakage current

at 150°C

I_{L(OFF)_150}

–

6

14

µA V_OUT= V_BAT

V_IN= 0 V;

P_9.1.9

V

_DD= 5 V;

T_J= 150°C

Reverse Diode

Reverse diode forward voltage

-V_DS

0.8 1.5

V

I_L= - I_L(NOM)

_IN= 0 V

;

P_9.1.11

V

Power Stage - Dynamic characteristics - switching time V_BAT= 13.5 V;V_DD= 5 V; resistive load: R_L= 2.2 Ω

see Figure 10 “Definition of Power Output Timing for Resistive Load” on Page 14 for definition details

Turn-on time

t_ON

35 75

115 µs

-

P_9.1.12

P_9.1.13

P_9.1.14

Turn-off time

t_OFF

t_DON

70 135 210 µs

Turn-on delay time

5

15

25

µs

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Smart Low-Side Power Switch

Electrical Characteristics

Table 6

Electrical Characteristics: Power Stage (cont’d)

T_j= -40°C to +150°C, V_DD= 3.0 V to 5.5 V, V_BAT= 6 V to 18 V, all voltages with respect to ground, positive current

flowing into pin (unless otherwise specified)

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Turn-off delay time

t_DOFF

40 75

30 60

120 µs

-

P_9.1.15

P_9.1.16

P_9.1.17

P_9.1.18

P_9.1.19

Turn-on output fall time

Turn-off output rise time

Turn-on Slew rate ³⁾

Turn-off Slew rate ⁴⁾

t_F

90

µs

t_R

(DV/Dt)_ON

(DV/Dt)_OFF

0.22 0.4 0.65 V/µs -

1) Not subject to production test, calculated by R_thJAand R_DS(ON)

2) Not subject to production test, specified by design

3) Not subject to production test, calculated slew rate between 90% and 50%; dV/dt = (V_OUT(90%)- V_OUT(50%)) / |(t_90%- t_50%)|

4) Not subject to production test, calculated slew rate between 50% and 90%; dV/dt = (V_OUT(50%)- V_OUT(90%)) / |(t_50%- t_90%)|

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Smart Low-Side Power Switch

Electrical Characteristics

9.2

Protection

Please see Chapter “Protection Functions” on Page 17 for parameter description and further details.

Note:

Integrated protection functions are designed to prevent IC destruction under fault conditions

described in the data sheet. Fault conditions are considered as “outside” normal operating range.

Protection functions are not designed for continuous repetitive operation

Table 7

Electrical characteristics: Protection

T_j= -40°C to +150°C, V_DD= 3.0 V to 5.5 V; V_BAT= 6 V to 18 V, all voltages with respect to ground, positive current

flowing into pin (unless otherwise specified)

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Thermal shut down ¹⁾

1)

Thermal shut down

T_J(SD)

150 170 200 °C

P_9.2.1

junction temperature

1)

Thermal hysteresis

ΔT_{J_HYS}

–

20

70

30

–

K

P_9.2.4

P_9.2.5

P_9.2.8

1)

Dynamic temperature limitation ΔT_J(SW)

–

K

1) 2)

Auto-restart delay time

t_D(RESTART)

10

40

ms

V_DD= 5.0 V

Over Voltage Protection / Clamping

Drain clamp voltage

V_OUT(CLAMP)

40

70

–

V

A

V_IN= 0 V; I_D= 50 mA; P_9.2.9

Current limitation

Current limitation trigger level

I_{L(LIM)_TRIGGER}

140

V_IN= 5 V;

V_DD= 5 V;

P_9.2.10

P_9.2.11

V

_DS= V_BAT

V_IN= 5 V;

_DD= 5 V; V_DS= V_BAT

Current limitation level

I_L(LIM)

35

–

70

A

V

1) Not subject to production test, specified by design.

2) Auto restart delay time after temperature protection shutdown. Thermal hysteresis must be also considered.

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Smart Low-Side Power Switch

Electrical Characteristics

9.3

Diagnostics

Please see Chapter “Diagnostics” on Page 20 for description and further details.

Table 8 Electrical Characteristics: Diagnostics

T_j= -40°C to +150°C, V_DD= 3.0 V to 5.5 V, V_BAT= 6 V to 18 V, all voltages with respect to ground, positive current

flowing into pin (unless otherwise specified)

Parameter

Symbol

Values

Unit Note or Test Condition Number

Min. Typ. Max.

Feedback pin

Status pin voltage drop

V_STATUS(ON)

–

0.5 0.8

V

I_STATUS= 0.5 mA;

3 V ≤ V_IN≤ 5.5 V

latched fault;

1)

P_9.3.1

P_9.3.2

Status pin leakage current

I_{STATUS(OFF)_85}

1.5

6

µA

V_STATUS≤ 5.5 V;

T_J≤ 85°C;

0 V ≤ V_IN≤ 5.5 V

Status pin leakage current

at 150°C

I_{STATUS(OFF)_150}

–

12

µA V_STATUS≤ 5.5 V;

T_J≤ 150°C;

P_9.3.3

0 V ≤ V_IN≤ 5.5 V

Status pin reset threshold

Status pin reset current

Fault feedback reset time

V_{STATUS(RESET)}0.9 1.8 2.7

V

–

P_9.3.4

P_9.3.5

P_9.3.6

I_{STATUS(RESET)}

t_{STATUS(RESET)}

3

–

7

–

mA

100

µs V_STATUS> V_{STATUS(RESET)};

no over temperature

1) Not subject to production test, specified by design.

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Smart Low-Side Power Switch

Electrical Characteristics

9.4

Supply and Input Stage

Please see Chapter “Supply and Input Stage” on Page 21 for description and further details.

Table 9 Electrical Characteristics: Supply and Input

T_j= -40°C to +150°C, V_DD= 3.0 V to 5.5 V, V_BAT= 6 V to 18 V, all voltages with respect to ground, positive current

flowing into pin (unless otherwise specified)

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Supply

Nominal supply voltage

V_DD(NOM)

V_DD(TH)

3.0 5.0 5.5

1.3 2.2 3.0

V

–

P_9.4.1

P_9.4.2

Supply Undervoltage Shutdown

Switch-on/off threshold voltage

V_IN= 5.0 V

Supply current,

continuos ON operation

I_DD(ON)

–

1

6

mA device on-state

_DD= 5.0 V

_L(0)= I_L(NOM)

P_9.4.3

P_9.4.5

P_9.4.6

V

I

1)

Supply current,

inverse condition on OUT to GND

I_DD(-VOUT)

–

mA

V_OUT< -0.3 V

V_IN= 5.0 V

1)

Standby supply current

I_{DD(OFF)_85}

1.5

µA

V_IN= 0 V

V

_DD= 5.0 V

T_J< 85°C

no fault signal

Standby supply current at 150°C

I_{DD(OFF)_150}

–

6

–

14

µA V_IN= 0 V

V_DD= 5.0 V

P_9.4.7

P_9.4.8

T_J< 150°C

no fault signal

Standby supply current,

inverse condition on OUT to GND

I_{DD(OFF)(-VOUT)}

200 µA I_L=-I_L(NOM)

V_IN= 0 V

Input

Low level input voltage

High level input voltage

Input voltage hysteresis

Input pull down current

V_IN(L)

V_IN(H)

V_IN(HYS)

I_IN

-0.3

2.0

–

0.8

5.5

–

V

–

P_9.4.9

–

V

–

1)

P_9.4.10

P_9.4.11

P_9.4.12

200

–

mV

–

160 µA 2.7 V < V_IN< 5.5 V

-0.3 V < V_DD< 5.5V

Internal Input pull down resistor

R_IN(GND)

25 50

100 kΩ

–

P_9.4.13

1) Not subject to production test, specified by design.

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Smart Low-Side Power Switch

Characterisation Results

10

Characterisation Results

Typical performance characteristics

10.1

Power Stage

Figure 20 Typical R_DS(ON)vs. V_DD(3..5.5 V) @ T_j=-40, 25, 85, 150°C; I_L(NOM)

Figure 21 Typical R_DS(ON)vs. V_DD(3..5.5 V) @ T_j=-40, 25, 85, 150°C; I_L=2*I_L(NOM)

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Smart Low-Side Power Switch

Characterisation Results

Figure 22 Typical R_DS(ON)vs. T_j(-40..150°C) @ V_DD=5 V, 3 V; I_L(NOM)

Figure 23 Typical I_L(OFF)vs. T_j(-40..150°C) @ V_BAT=6 V, 13.5 V, 18 V, V_BAT(SC)V, 40 V; V_IN=0V;

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Smart Low-Side Power Switch

Characterisation Results

Figure 24

E_AS[J] vs. I_L(0.5*I_L(NOM), I_L(NOM), 2*I_L(NOM)) @ T_J(0)= 25°C and 150°C

Figure 25 E_AR[J] vs. No. cycles; @ I_L(NOM), 2*I_L(NOM); T_J(0)= 25, 105°C;

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Smart Low-Side Power Switch

Characterisation Results

10.2

Dynamic characteristics

Figure 26 Typical delay on time, delay off time vs. T (-40..150°C) @_JV_DD=5 V; V_BAT=13.5 V

Figure 27 Typical fall time, rise time vs. T_J(-40..150°C) @ V_DD=5 V; V_BAT=13.5 V

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Smart Low-Side Power Switch

Characterisation Results

Figure 28 Typical slew rate (ON&OFF) vs. T_J(-40..150°C) @ V_DD=5 V; V_BAT=13.5 V

Figure 29 Typical delay on time, delay off time vs. R_L@ T_J(-40..150°C); V_DD=5 V; V_BAT=13.5 V

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Smart Low-Side Power Switch

Characterisation Results

Figure 30 Typical fall time, rise time vs. I_L(0.5A..I_{L(LIM)_MIN}) @ T_J(-40, 25, 150°C); V_J=5 V; V_BAT=13.5 V

Figure 31 Typical slew rate (ON&OFF) vs. R_L@ T_J(-40, 25, 150°C); V_DD=5 V; V_BAT=13.5 V

Datasheet

34

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Characterisation Results

Figure 32 Typical delay on time, delay off time vs. V_BAT(0..40V) @ T_J(-40, 25, 150°C); V_DD=5 V; I_L=I_L(NOM)

Figure 33 Typical fall time, rise time vs. V_BAT(0..40V) @ T_J(-40, 25, 150°C); V_DD=5 V; I_L=I_L(NOM)

Datasheet

35

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Characterisation Results

Figure 34 Typical slew rate (ON&OFF) vs. V_BAT(0..40V) @ T_J(-40, 25, 150°C); V_DD=5 V; I_L=I_L(NOM)

10.3

Supply and Input Stage

Figure 35 V_DD(U_{V_on}, V_DD(U_{V_off}) vs. T_J

Datasheet

36

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Characterisation Results

Figure 36 I_DD(on)vs. V_DD@ T_j= -40, 25, 150°C

Figure 37 I_DD(off)vs. T_j@ V_DD= 3, 4, 5 V

Datasheet

37

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Characterisation Results

Figure 38 I_INvs. V_in@ T_j= -40, 25, 150°C

Figure 39

R_IN(GND)vs. T_j

Datasheet

38

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Characterisation Results

Figure 40

V_IN(L)vs. T_j@ V_DD= 3, 4, 5 V

Figure 41

V_IN(H)vs. T_j@ V_DD= 3, 4, 5 V

Datasheet

39

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Application Information

11

Application Information

Note:

The following information is given as a hint for the implementation of the device only and shall not

be regarded as a description or warranty of a certain functionality, condition or quality of the device.

Application Diagram

An application example with the BTS3011TE is shown below.

V_BAT

IN

Load

Voltage Regulator

OUT

C_VDoptional:

D

e.g. 100nF

R_STATUS

VDD

Micro

controller

VDD

OUT

STATUS

I/O

Status/Reset

IN

I/O

PWM

GND

Figure 42 Simplified application diagram

Note:

This is a very simplified example of an application circuit. The function must be verified in the real

application.

Table 10 Recommended external components

Reference

R_STATUS

C_VDD

Value

10 kΩ

100 nF

Description

Pull-up resistor for STATUS pin

Supply pin capacitor for fast supply current transients

11.1

Design and Layout Recommendations/Considerations

As consequence of the fast switching times for high currents, special care has to be taken with the PCB layout.

Stray inductances have to be minimized.

Datasheet

40

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Package Outlines BTS3011TE

12

Package Outlines BTS3011TE

Figure 43 PG-TO252-5

Transistor Outline Package

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant

with government regulations the device is available as a green product. Green products are RoHS-Compliant

(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages.

Dimensions in mm

Datasheet

41

Rev. 1.0

2018-07-19

HITFET^TM- BTS3011TE

Smart Low-Side Power Switch

Revision History

13

Revision History

Revision Date

Changes

Rev. 1.0 2018-07-19 Datasheet released

Datasheet

42

Rev. 1.0

2018-07-19

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on technology, delivery terms

Edition 2018-07-19

Published by

Infineon Technologies AG

81726 Munich, Germany

event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest

characteristics ("Beschaffenheitsgarantie").

Infineon Technologies Office (www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer's compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer's products and any use of the product of

Infineon Technologies in customer's applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer's technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to

such application.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies office.

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or any

consequences of the use thereof can reasonably be

expected to result in personal injury.

Document reference


型号：	BTS3011TE
厂家：	Infineon
描述：	The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V automotive and industrial applications.
文件：	总43页 (文件大小：1956K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTS3011TE [INFINEON]

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