BTS50010-1TAD_技术文档

BTS50010-1TAD

Smart High-Side Power Switch

1

Overview

Features

•

One channel device

Low Stand-by current

3.3 V to V_Slevel capable input pin

Electrostatic discharge protection (ESD)

Optimized Electromagnetic Compatibility (EMC)

Logic ground independent from load ground

Very low leakage current at OUT pin

Compatible to cranking pulse requirement (test pulse 4 of ISO 7637 and cold start pulse in LV124)

Embedded diagnostic functions

Embedded protection functions

Green Product (RoHS compliant)

AEC Qualified

Applications

•

Suitable for resistive, inductive and capacitive loads

Replaces electromechanical relays, fuses and discrete circuits

Most suitable for applications with high current loads, such as heating system, main switch for power

distribution, start-stop power supply switch

•

PWM applications with low frequencies

Description

The BTS50010-1TAD is a 1.0 mΩ single channel Smart High-Side Power Switch, embedded in a PG-TO-263-7-

10 package, providing protective functions and diagnosis. It contains Infineon^®ReverSave™ functionality. The

power transistor is built by a N-channel power MOSFET with charge pump. It is specially designed to drive high

current loads up to 80 A, for applications like switched battery couplings, power distribution switches,

heaters, glow plugs, in the harsh automotive environment.

Data Sheet

www.infineon.com/power

1

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Overview

Table 1

Product Summary

Parameter

Symbol Values

Operating voltage range

V_S(OP)

8 V … 18 V

Extended supply voltage including dynamic undervoltage capability

Maximum ON-state resistance (T_J= 150°C)

Minimum nominal load current (T_A= 85°C)

Typical current sense differential ratio

V_S(DYN)3.2 V … 28 V

R_DS(ON)2 mΩ

I_L(NOM)

dk_ILIS

I_CL(0)

40 A

52100

150 A

Minimum short circuit current threshold

Maximum stand-by current for the whole device with load (T_A= T_J= 85°C) I_{VS (OFF)}18 µA

Maximum reverse battery voltage (T_A= 25°C for 2 min)

-V_S(REV)16 V

Embedded Diagnostic Functions

•

Proportional load current sense

Short circuit / Overtemperature detection

Latched status signal after short circuit or overtemperature detection

Embedded Protection Functions

•

Infineon^®ReverSave™: Reverse battery protection by self turn ON of power MOSFET

Infineon^®Inversave: Inverse operation robustness capability

Secure load turn-OFF while device loss of GND connection

Overtemperature protection with latch

Short circuit protection with latch

Overvoltage protection with external components

Enhanced short circuit operation

Infineon^®SMART CLAMPING

Type

Package

Marking

BTS50010-1TAD

PG-TO-263-7-10

S50010D

Data Sheet

2

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Table of Contents

1

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2

3

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

3.1

3.2

3.3

4

General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4.1

4.2

4.3

5

5.1

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Switching Resistive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Switching Inductive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Switching Active Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

PWM Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Advanced switch-off behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Protection during Loss of Load or Loss of V_SCondition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Undervoltage Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Activation of the Switch into Short Circuit (Short Circuit Type 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Short Circuit Appearance when the Device is already ON (Short Circuit Type 2) . . . . . . . . . . . . 26

Influence of the battery wire inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

SENSE Signal in Different Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

SENSE Signal Variation and Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

5.1.1

5.1.2

5.1.3

5.1.3.1

5.1.3.2

5.1.4

5.1.5

5.1.6

5.1.7

5.2

5.2.1

5.2.2

5.3

5.3.1

5.3.2

5.3.3

5.3.4

5.3.5

5.3.6

5.3.6.1

5.3.6.2

5.3.6.3

5.3.7

5.4

5.4.1

5.4.2

5.4.3

5.4.3.1

5.4.3.2

Data Sheet

3

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

5.4.3.3

5.4.3.4

SENSE Signal in Case of Short Circuit to V_S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

SENSE Signal in Case of Over Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

6

6.1

6.2

Electrical Characteristics BTS50010-1TAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Electrical Characteristics Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

7

Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

7.1

Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

8

9

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

Data Sheet

4

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

List of Tables

Table 1

Table 2

Table 3

Table 4

Table 5

Table 6

Table 7

Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Sense Signal, Function of Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Electrical Characteristics: BTS50010-1TAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

Data Sheet

5

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

List of Figures

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Block Diagram for the BTS50010-1TAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Maximum Single Pulse Current vs. Pulse Time, T_J≤ 150°C, T_PIN= 85°C . . . . . . . . . . . . . . . . . . . . . . . 12

Maximum Energy Dissipation for Inductive Switch OFF, E_Avs. I_Lat V_S= 13.5 V . . . . . . . . . . . . . . . . 13

Maximum Energy Dissipation Repetitive Pulse temperature derating. . . . . . . . . . . . . . . . . . . . . . . 13

Typical Transient Thermal Impedance Z_th(JA)= f(time) for Different PCB Conditions . . . . . . . . . . 15

Switching a Resistive Load: Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Output Clamp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 10 Switching an Inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Figure 11 Boundary conditions for switching active loads at low V_Swith low initial V_DSvoltage. . . . . . . . . 18

Figure 12 Inverse Current Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 13 Inverse Behavior - Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 14 Switching in PWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 15 Input Pin Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 16 Diagram of Diagnosis & Protection Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 17 Loss of Ground Protection with External Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 18 Loss of V_S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 19 Loss of Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 20 Undervoltage Behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 21 Overvoltage Protection with External Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 22 Reverse Polarity Protection with External Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Figure 23 Oscillations at VS pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 24 Consecutive short circuit events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 25 RC Snubber circuits: between VS pin and module GND; between VS pin and device GND . . . . . 28

Figure 26 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 27 Diagnostic Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 28 Current Sense for Nominal and Overload Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 29 Improved Current Sense Accuracy after 2-Point Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Figure 30 Fault Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 31 Application Diagram with BTS50010-1TAD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Figure 32 PG-TO-263-7-10 (RoHS-Compliant). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Data Sheet

6

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Block Diagram

2

Block Diagram

R_VS

voltage sensor

V_S

internal

power

supply

over

temperature

Smart clamp

gate control

&

charge pump

driver

logic

over current

switch OFF

IN

ESD

protection

OUT

load current sense

IS

Blockdiagram

GND

Figure 1

Block Diagram for the BTS50010-1TAD

Data Sheet

7

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Pin Configuration

3

Pin Configuration

3.1

Pin Assignment

4

1 2 3 5 6 7

Figure 2

Pin Configuration

3.2

Pin Definitions and Functions

1

Symbol Function

GND

IN

GrouND; Signal Ground

2

INput; Digital signal to switch ON channel (“high” active)

Sense; Analog/Digital signal for diagnosis, if not used: left open

Supply Voltage; Battery voltage

3

IS

4, Cooling tab VS

5, 6, 7 OUT

OUTput; Protected high side power output channel¹⁾

1) All output pins are internally connected and they also have to be connected together on the PCB. Not shorting all

outputs on PCB will considerably increase the ON-state resistance and decrease the current sense / overcurrent

tripping accuracy. PCB traces have to be designed to withstand the maximum current.

Data Sheet

8

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Pin Configuration

3.3

Voltage and Current Definition

Figure 3 shows all terms used in this Data Sheet, with associated convention for positive values.

I_VS

V_S

I_IN

IN

V_IN

V_DS

I_OUT

OUT

V_b,_IS

I_IS

V_OUT

IS

GND

V_IS

I_GND

Figure 3

Voltage and Current Definition

Data Sheet

9

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Table 2

Absolute Maximum Ratings¹⁾

T_J= -40°C to +150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Supply Voltages

Supply Voltage

V_S

-0.3

0

–

28

16

V

–

P_4.1.1

P_4.1.2

Reverse Polarity Voltage

-V_S(REV)

²⁾t < 2 min

T_A= 25°C

R_L≥ 0.5 Ω

Load Dump Voltage

V_BAT(LD)

–

5

–

45

20

V

³⁾R_I= 2 Ω

R_L= 2.2 Ω

R_IS= 1 kΩ

P_4.1.5

P_4.1.3

R_IN= 4.7 kΩ

Short Circuit Capability

4)

Supply Voltage for Short Circuit V_S(SC)

R

= 20 mΩ

ECU

Protection

L_ECU= 1 µH

_cable= 6 mΩ/m

_cable= 1 µH/m

R

L

l = 0 to 5 m

R, C as shown in

Figure 31

See Chapter 5.3

5)

Short Circuit is Permanent: IN

Pin Toggles Short Circuit (SC

type 1)

n_RSC1

–

1 million

(Grade A)

–

P_4.1.4

P_4.1.6

GND Pin

Current through GND pin

I_GND

-15

–

10⁷⁾

15

mA

–

6)

t ≤ 2 min

Input Pin

Voltage at IN pin

Current through IN pin

V_IN

I_IN

-0.3

–

V_S

V

–

P_4.1.7

P_4.1.8

-5

–

5

mA

–

50⁶⁾

t ≤ 2 min

Maximum Retry Cycle Rate in

Fault Condition

f_fault

–

1

Hz

–

P_4.1.9

Data Sheet

10

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

General Product Characteristics

Table 2

Absolute Maximum Ratings¹⁾(cont’d)

T_J= -40°C to +150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Sense Pin

Voltage at IS pin

Current through IS Pin

V_IS

I_IS

-0.3

-15

–

V_S

10⁷⁾

15

V

–

P_4.1.10

P_4.1.11

–

mA

–

6)

t ≤ 2 min

Power Stage

Maximum Energy Dissipation by E_AS

Switching Off Inductive Load

Single Pulse over Lifetime

–

3000

mJ

V_S= 13.5 V

I_L= I_L(NOM)= 40A

P_4.1.12

P_4.1.13

P_4.1.14

T_J(0)≤ 150°C

See Figure 5

⁸⁾V_S= 13.5 V

I_L= I_L(NOM)= 40A

T_J(0)≤ 105°C

See Figure 5

⁸⁾V_S= 13.5 V

I_L= 80A

Maximum Energy Dissipation

Repetitive Pulse

E_AR

460

Maximum Energy Dissipation

Repetitive Pulse

E_AR

235

T_J(0)≤ 105°C

See Figure 5

Average Power Dissipation

P_TOT

V_OUT

–

200

–

W

V

T_C= -40°C to

150°C

P_4.1.15

P_4.1.21

Voltage at OUT Pin

Temperatures

-64

–

Junction Temperature

T_J

-40

–

150

60

°C

K

–

P_4.1.16

Dynamic Temperature Increase ∆T_J

See Chapter 5.3 P_4.1.17

while Switching

Storage Temperature

ESD Susceptibility

T_STG

-55

–

150

°C

–

P_4.1.18

ESD Susceptibility (all Pins)

V_ESD(HBM)-2

–

2

4

kV

HBM⁹⁾

P_4.1.19

P_4.1.20

ESD Susceptibility OUT Pin vs. V_ESD(HBM)-4

GND / V_S

1) Not subject to production test, specified by design.

2) The device is mounted on a FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection.

3) V_S(LD)is setup without DUT connected to the generator per ISO 7637-1.

4) In accordance to AEC Q100-012, Figure-1 Test Circuit.

5) In accordance to AEC Q100-012, Chapter 3 conditions. Short circuit conditions deviating from AEC Q100-012 may

influence the specified short circuit cycle number in the Data Sheet.

6) The total reverse current (sum of I_GND, I_ISand -I_IN) is limited by -V_{S(REV)_max}and R_VS

.

7) T_C≤ 125°C

8) Setup with repetitive EAR and superimposed TC conditions (like AEC-Q100-PTC, ≤ 10⁶pulses with E ≤ E_AR, ≤10³passive

temperature cycles), parameter drift within datasheet limits possible

9) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001.

Data Sheet

11

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

General Product Characteristics

Notes

1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

Data Sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

250

200

150

100

50

0

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

t_pulse[sec]

Figure 4

Maximum Single Pulse Current vs. Pulse Time, T_J≤ 150°C, T_PIN= 85°C

Note:

Above diagram shows the maximum single pulse current that can be maintained by the internal

power stage bond wires for a given pulse time t_pulse. The maximum reachable current may be

smaller depending on the device current limitation level. The maximum reachable pulse time may

be shorter due to thermal protection of the device. T_PINis the temperature of pins 5, 6 and 7.

Data Sheet

12

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

General Product Characteristics

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Eas - TJ(0)<150°C

Ear - TJ(0)<105°C

0

20

40

60

80

100

120

140

Figure 5

Maximum Energy Dissipation for Inductive Switch OFF, E_Avs. I_Lat V_S= 13.5 V

100%

80%

60%

40%

20%

0%

100

110

120

130

140

150

T_j(0)[°C]

Figure 6

Maximum Energy Dissipation Repetitive Pulse temperature derating

Data Sheet

13

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

General Product Characteristics

4.2

Functional Range

Table 3

Functional Range

Parameter

Symbol

V_S(NOM)

V_S(EXT)

Values

Typ.

–

Unit Note or

Test Condition

Number

Min.

Max.

Supply Voltage Range for

Nominal Operation

8

18

V

–

P_4.2.1

P_4.2.2

1)

Supply Voltage Range for

Extended Operation

5.3

–

28

V

V ≥ 2.2 V

IN

I_L≤ I_L(NOM)

T_J≤ 25°C

Parameter

deviations

possible

1)

V_S(EXT)

5.5

–

28

V

V ≥ 2.2 V

IN

I_L≤ I_L(NOM)

T_J= 150°C

Parameter

deviations

possible

Supply Voltage Range for

Extended Operation

Dynamic Undervoltage

Capability

V_S(EXT,DYN)3.2²⁾

–

V

¹⁾acc. to ISO 7637 P_4.2.3

1)

Supply Undervoltage

Shutdown

V_S(UV)

–

4.5

V ≥ 2.2 V

P_4.2.4

IN

R_L= 270 Ω

V_Sdecreasing

See Figure 20

Slewrate at OUT

|dV_DS/dt|

–

10

V/µs ¹⁾|V_DS| < 3V

See Chapter 5.1.4

P_4.2.7

P_4.2.8

1)

0.2

V/µs

V

< V_S< 8 V

S(EXT)

0 < V_DS< 1 V

t < t_ON(DELAY)

See Chapter 5.1.4

1) Not subject to production test. Specified by design

2) T_A= 25°C; R_L= 0.5 Ω; pulse duration 6 ms; cranking capability is depending on load and must be verified under

application conditions

Note:

Within the functional or operating range, the IC operates as described in the circuit description. The

electrical characteristics are specified within the conditions given in the Electrical Characteristics

table.

Data Sheet

14

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

General Product Characteristics

4.3

Thermal Resistance

Note:

This thermal data was generated in accordance with JEDEC JESD51 standards. For more

information, go to www.jedec.org.

Table 4

Thermal Resistance

Parameter

Symbol

Values

Typ.

–

Unit Note or

Test Condition

Number

Min.

Max.

0.5

–

1)

Junction to Case

R_thJC

–

K/W

P_4.3.1

P_4.3.2

P_4.3.3

1)2)

1)3)

Junction to Ambient

R_thJA(2s2p)

20

Junction to Ambient

R_thJA

70

–

1) Not subject to production test, specified by design.

2) Specified R_thJAvalue is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product

(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 µm Cu, 2 × 35 µm

Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. T_A= 25°C.

Device is dissipating 2 W power.

3) Specified R_thJAvalue is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; the Product

(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with only one top copper layer 1 × 70 µm. T_A= 25°C.

Device is dissipating 2 W power.

Figure 7 is showing the typical thermal impedance of BTS50010-1TAD mounted according to JEDEC JESD51-

2,-5,-7 at natural convection on FR4 1s0p and 2s2p boards.

100

JEDEC 1s0p / 600mm²

JEDEC 1s0p / 300mm²

JEDEC 1s0p / footprint

10

JEDEC 2s2p

1

0.1

0.01

0.0001

0.001

0.01

0.1

1

10

100

1000

t_PULSE[sec]

Figure 7

Typical Transient Thermal Impedance Z_th(JA)= f(time) for Different PCB Conditions

Data Sheet

15

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5

Functional Description

5.1

Power Stage

The power stage is built by a N-channel power MOSFET (DMOS) with charge pump.

5.1.1

Output ON-State Resistance

The ON-state resistance R_DS(ON)depends on the supply voltage as well as the junction temperature T_J. Page 42

shows the dependencies in terms of temperature and supply voltage, for the typical ON-state resistance. The

behavior in reverse polarity is described in Chapter 5.3.5.

A HIGH signal (see Chapter 5.2) at the input pin causes the power DMOS to switch ON with a dedicated slope,

which is optimized in terms of EMC emission.

5.1.2

Switching Resistive Loads

Figure 8 shows the typical timing when switching a resistive load. The power stage has a defined switching

behavior. Defined slew rates results in lowest EMC emission at minimum switching losses.

V_OUT

90% V_S

50% V_S

I_OUT

dV_OFF/dt

dV_ON/dt

25% V_S

10% V_S

t_OFF(DELAY)

t_ON(DELAY)

V_IN

t_OFF

t_ON

Figure 8

Switching a Resistive Load: Timing

5.1.3

Switching Inductive Loads

5.1.3.1 Output Clamping

When switching OFF inductive loads with high side switches, the voltage V_OUTdrops below ground potential,

because the inductance intends to continue driving the current. To prevent the destruction of the device due

to high voltages, there is a Infineon^®SMART CLAMPING mechanism implemented that keeps negative output

voltage to a certain level (V_S- V_DS(CL)). Please refer to Figure 9 and Figure 10 for details. Nevertheless, the

maximum allowed load inductance remains limited.

Data Sheet

16

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

V_S

R_VS

Smart

Clamp

V_DS

IN

LOGIC

I_L

V_S

OUT

GND

V_OUT

V_IN

L, R_L

Figure 9

Output Clamp

V_IN

t

V_OUT

V_S

V_S-V_DS(CL)

I_L

t

T

j

T_J0

t

Figure 10 Switching an Inductance

The BTS50010-1TAD provides Infineon^®SMART CLAMPING functionality. To increase the energy capability, the

clamp voltage V_DS(CL)increases with junction temperature T_Jand with load current I_L. Refer to Page 44.

5.1.3.2 Maximum Load Inductance

During demagnetization of inductive loads, energy must be dissipated in the BTS50010-1TAD. This energy can

be calculated with following equation:

L

R_L

V_S− V_DS(CL)

R_L× I_L

E = V_DS(CL)

×

[

× ln

(

1 −

) + I_L]

R_L

V_S− V_DS(CL)

(5.1)

Data Sheet

17

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

Following equation simplifies under the assumption of R_L= 0 Ω.

1

V_S

E = × L × I_L²×

2

(

1 −

)

V_S− V_DS(CL)

(5.2)

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 5 for

the maximum allowed energy dissipation as function of the load current.

5.1.4

Switching Active Loads

When switching generative or electronic loads such as motors or secondary ECUs which have the ability to

feed back voltage disturbances to the OUT pins, special attention is required about the resulting absolute and

dynamic voltage V_DSbetween VS pin and OUT pins.

To maintain device functionality it is required to limit the maximum positive or negative slew rate of

V_DS= V_S- V_OUTbelow |dV_DS/dt| (parameter P_4.2.7) .

In case the device operates at low battery voltage (V_S< V_{S(NOM), Min}) where the load feeds back a positive output

voltage reaching almost VS potential (0 < V_DS< 1 V), it has to be ensured that for each activation (turn-on

event), where the device is commanded on by applying V_IN(H)at IN pin, a maximum positive or negative slew

rate of V_DSbelow |dV_DS/dt| (parameter P_4.2.8) will not be exceeded until t_ON(DELAY)has expired.

Also in the case of low V_Sand low V_DSduring the rising edge of IN, the device might not turn on. Figure 11

shows the worst case boundary condition. In such condition, if the device does not turn on, it will be latched.

2

1.5

1

0.5

0

4.5

5

5.5

6

6.5

7

7.5

8

8.5

9

9.5

VS [V]

Figure 11 Boundary conditions for switching active loads at low V_Swith low initial V_DSvoltage .

( Not subject to production test, specified by design)

For loads that generate steady or dynamic voltage at the OUT pins which is higher than voltage at VS pin

please consider Chapter 5.1.5.

Data Sheet

18

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5.1.5

Inverse Current Capability

In case of inverse current, meaning a voltage V_OUT(INV)at the output higher than the supply voltage V_S, a current

I_L(INV)will flow from output to V_Spin via the body diode of the power transistor (please refer to Figure 12). In

case the IN pin is HIGH, the power DMOS is already activated and will continue to remain in ON state during

the inverse event. In case, the input goes from “L” to “H”, the DMOS will be activated even during an inverse

event. Under inverse condition, the device is not overtemperature / overload protected. During inverse mode

at ON the sense pin will provide a leakage current of less or equal to I_IS0. Due to the limited speed of INV

comparator, the inverse duration needs to be limited.

V_BAT

V_S

Gate

driver

V_{OUT (INV)}

I_L(INV)

INV OL

comp.

Comp.

OUT

GND

Figure 12 Inverse Current Circuitry

(a) Inverse spike during ON -mode

(b) Inverse spike during ON -mode

for times > t_{p,INV,noFAULT}

(c) Inverse spike during ON -mode with short

circuit after leaving Inverse mode

for short times (< t_{p,INV,noFAULT}

)

V_OUT

V_S

t

> t_{p, IN V ,n o FAU L T}

< t_{p, IN V ,n o FAU L T}

I_IS

t_{OFF (trip )}

I_{IS (fault )}

t_sIS(ON)

t_{p, n o IN V, FAU L T}

t_{pIS(FAULT )}

t

Internal Fault -flag set

Figure 13 Inverse Behavior - Timing Diagram

Data Sheet

19

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5.1.6

PWM Switching

The switching losses during this operation should be properly considered (see following equation):

_TOTAL= (switching_ON_energy + switching_OFF_energy + I_L²× R_DS(ON)× t_DC) / period

P

PWM switching application slightly above t_{IN(RESETDELAY)}parameter (see Figure 26) with calculated power

dissipation P_TOTAL> P_TOTparameter limit causes an effective increase in T_J(TRIP)parameter.

In the event of a fault condition it has to be ensured, that the PWM frequency will not exceed a maximum retry

frequency of f_FAULT(parameter P_4.1.9). With this measure the short circuit robustness n_RSC1(parameter

P_4.1.4) can be utilized. Operation at nominal PWM frequency can only be restored, once the fault condition

is overcome.

V_IN

V_{IN_H}

V_{IN_L}

t

P

P_TOT

t

t_DC

Figure 14 Switching in PWM

5.1.7

Advanced switch-off behavior

In order to reduce device stress when switching OFF critical loads and/or critical load conditions, the device

provides an advanced switch off functionality which results in a typically ten times faster switch off behavior.

This fast switch off functionality is triggered by one the following conditions:

•

The device is commanded off by applying V_IN(L)at the IN pin. During the switch OFF operation the OUT pins’

voltage in respect to GND pin drops to typically -3 V or below (typically V_OUT– V_GND≤ -3 V).

•

The device is commanded on or is already in on-state. The device then detects a short circuit condition

(I_L≥ I_CL(0)) and initiates a protective switch off. Please refer to Chapter 5.3.6.1 and Chapter 5.3.6.2 for

details.

Data Sheet

20

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5.2

Input Pins

5.2.1

Input Circuitry

The input circuitry is compatible with 3.3 V and 5 V microcontrollers or can be directly driven by V_S. The

concept of the input pin is to react to voltage threshold. With the Schmitt trigger, the output is either ON or

OFF. Figure 15 shows the electrical equivalent input circuitry.

R_VS

V_S

IN

I_IN

GND

Figure 15 Input Pin Circuitry

5.2.2

Input Pin Voltage

The IN uses a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set by the

threshold V_{IN(L) Max}and V_{IN(H) Min.}The exact value where ON and OFF take place depends on the process, as well

as the temperature. To avoid cross talk and parasitic turn ON and OFF, an hysteresis is implemented. This

ensures immunity to noise.

5.3

Protection Functions

The device provides embedded protective functions. Integrated protection functions are designed to prevent

the destruction of the IC from fault conditions described in the Data Sheet. Fault conditions are considered as

“outside” normal operating range. Protection functions are designed neither for continuous nor for repetitive

operation.

Figure 16 describes the typical functionality of the diagnosis and protection block.

Data Sheet

21

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

V_S

V_DS

V_b,IS

VS

ESD

protection

R_VS

V_S(int)

cu rrent

sense

IN

2V

&

Driver

I_{IS (fault)}

Ove r-

current

I_L

IS

1

0

(I_L/dk_{ILI S}) ± I_{IS 0}

OUT

V_IS

t_IN(RESET

I_IS

DEL AY)

V_S-V_OUT>3V

&

R

Q

R_IS

I_L>I_CL

≥1

&

FAULT

S

30mV

Τ_J> Τ_J(TRIP)

driver logic inversecomparator

GND

Figure 16 Diagram of Diagnosis & Protection Block

5.3.1

Loss of Ground Protection

In case of loss of module or device ground, where the load remains connected to ground, the device protects

itself by automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage

applied at IN pin. It is recommended to use input resistors between the microcontroller and the

BTS50010-1TAD to ensure switching OFF of channel. In case of loss of module or device ground, a current

(I_OUT(GND)) can flow out of the DMOS. Figure 17 sketches the situation.

V_bat

R_VS

V_S

R_IN

OUT

IN

V_IN

IS

GND

R_IS

Figure 17 Loss of Ground Protection with External Components

5.3.2

Protection during Loss of Load or Loss of V_SCondition

In case of loss of load with charged primary inductances the supply voltage transient has to be limited. It is

recommended to use a Zener diode, a varistor or V_Sclamping power switches with connected loads in parallel.

The voltage must be limited according to the minimum value of the parameter 6.1.33 indicated in Table 6.

Data Sheet

22

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

In case of loss of V_Sconnection with charged inductive loads, a current path with sufficient load current

capability has to be provided, to demagnetize the charged inductances. It is recommended to protect the

device using a Zener diode together with a diode (V_Z1+ V_D1< 16 V), with path (A) or path (B) as shown in

Figure 18.

For a proper restart of the device after loss of V_S, the input voltage must be delayed compared to the supply

voltage ramp up. This can be realized by a capacitor between IN and GND (see Figure 31).

For higher clamp voltages, currents through all pins have to be limited according to the maximum ratings.

Please see Figure 18 and Figure 19 for details.

ext. components acc.

to either(A) or (B)

V_BAT

required, not both

(A)

R_VS

V_S

D₁

(B)

OUT

Z₁

IN IS

R_IN

GND

D₁

Z₁

R_IS

Inductive

Load

V_IN

Figure 18 Loss of V_S

V_BAT

L/R cable

R_VS

V_S

Z₂

OUT

IN IS

GND

R_IN

R_IS

R/L cable

Load

V_IN

Figure 19 Loss of Load

Data Sheet

23

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5.3.3

Undervoltage Behavior

If the device is already ON and the power supply decreases but remains above the V_S(UV), no effect is observed

and the device keeps on working normally (case 1, Figure 20)

If the power supply falls below the V_S(UV)but remains above the V_S(EXT,DYN), the device turns off, but it turns

automatically on again when the power supply goes above Min. V_S(EXT)(case 2, Figure 20).

In case the power supply becomes lower than V_S(EXT,DYN), the device turns off and can be switched on again only

after a reset signal at the IN pin, provided that the power supply is higher than Min. V_S(EXT)(case 3, Figure 20).

1

2

3

MIN V_S(EXT)

V_S(UV)

V_S(EXT,DYN)

Always ON

1

2

turn OFF, automatic turn ON when V _S≥ MIN V_S(EXT)

3

turn OFF, turn ON with IN reset with V ≥ MIN V_S(EXT)

S

Figure 20 Undervoltage Behavior

Data Sheet

24

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5.3.4

Overvoltage Protection

In case V_{S(SC)_max}< V_S< V_DS(CL), the device will switch ON/OFF normally as in the nominal voltage range.

Parameters may deviate from the specified limits and lifetime is reduced. This specially impacts the short

circuit robustness, as well as the maximum energy E_ASand E_ARthe device can handle.

The BTS50010-1TAD provides Infineon^®SMART CLAMPING functionality, which suppresses excessive transient

overvoltage by actively clamping the overvoltage across the power stage and the load. This is achieved by

controlling the clamp voltage V_DS(CL)depending on the junction temperature T_Jand the load current I_L(see

Figure 21 for details).

V_{BA T}

R_VS

V_S

R_IN

V_IN

IN

OUT

IS

GND

R_IS

Figure 21 Overvoltage Protection with External Components

5.3.5

Reverse Polarity Protection

In case of reverse polarity, the intrinsic body diode of the power DMOS causes power dissipation. To limit the

risk of overtemperature, the device provides Infineon^®ReverSave™ functionality. The power in this intrinsic

body diode is limited by turning the DMOS ON. The DMOS resistance is then equal to R_DS(REV)

.

Additionally, the current into the logic has to be limited. The device includes a R_VSresistor which limits the

current in the diodes. To avoid overcurrent in the R_VSresistor, it is nevertheless recommended to use a R_IN

resistor. Please refer to maximum current described in Chapter 4.1.

Figure 22 shows a typical application.

R_ISis used to limit the current in the sense transistor, which behaves as a diode.

The recommended typical value for R_INis 4.7 kΩ and for R_IS1 kΩ.

Data Sheet

25

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

-V_{BA T}

R_VS

I_RVS

V_S

R_IN

IN

I_IN

OUT

-I_L

IS

GND

DOUT

GND

R_IS

-I_GND

-I_IS

Figure 22 Reverse Polarity Protection with External Components

5.3.6

Overload Protection

In case of overload, high inrush current or short circuit to ground, the BTS50010-1TAD offers several protection

mechanisms. Any protective switch OFF latches the output. To restart the device, it is necessary to set

IN = LOW for t > t_{IN(RESETDELAY)}. This behavior is known as latch behavior. Figure 26 gives a sketch of the

situation.

5.3.6.1 Activation of the Switch into Short Circuit (Short Circuit Type 1)

When the switch is activated into short circuit, the current will raise until reaching the I_CL(0)value. After t_OFF(TRIP)

,

the device will turn OFF and latches until the IN pin is set to low for t > t_{IN(RESETDELAY)}. Under certain supply

undervoltage shutdown conditions (for example V_S< V_S(EXT,DYN)) the latched fault may be reset. For overload

(short circuit or overtemperature), the maximum retry cycle (f_fault) under fault condition must be considered.

5.3.6.2 Short Circuit Appearance when the Device is already ON (Short Circuit Type 2)

When the device is in ON state and a short circuit to ground appears at the output (SC2) with an overcurrent

higher than I_CL(0)for a time longer than t_OFF(TRIP), the device automatically turns OFF and latches until the IN pin

is set to low for t > t_{IN(RESETDELAY)}. Under certain supply undervoltage shutdown conditions (for example

V_S< V_S(EXT,DYN)) the latched fault may be reset.

5.3.6.3 Influence of the battery wire inductance

The wire between the battery and the VS pin includes typically some parasitic inductance.

When the device switches off due to a short circuit event, the energy stored in the line inductance together

with the capacitance (either the capacitor placed at VS pin or the internal capacitance between drain and

source) could trigger an oscillatory behavior on the supply line at short circuit turn-off (see Figure 23), whose

frequency depends on the inductance and capacitance values.

Data Sheet

26

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

I_Load

I_CL

Short circuit detected

t

V_S

Oscillations of the

V_Svoltage

V_BAT

t

Figure 23 Oscillations at VS pin

The oscillations can pull the VS pin voltage to GND or even below. In some cases this behaviour may cause the

device to reset the fault generated by the overcurrent event. As consequence the device may switch on again,

as soon as the VS reaches an adequate value. The short circuit condition will be detected again and then the

device will switch off. Short circuits and resets of the fault condition may repeatedly occur (see Figure 24).

Short circuits detected

I_Load

I_CL

t

Figure 24 Consecutive short circuit events

Data Sheet

27

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

Potential solutions to dampen such oscillation and to achieve an effectively latching overcurrent protection

is a RC snubber network, which needs to be connected between the VS pin and device or module GND.

Figure 25 shows RC snubber circuits for each GND connection. For detailed information see Chapter 7.

VS

IN

IS

IN

IS

OUT

GND

OUT

GND

Figure 25 RC Snubber circuits: between VS pin and module GND; between VS pin and device GND

The design of the most suitable RC snubber network is beyond the scope of this chapter. Nevertheless the

recommendation given in Chapter 7 contribute to effectively dampen the oscillation for typical line

inductance and CVS.

5.3.7

Temperature Limitation in the Power DMOS

The BTS50010-1TAD incorporates an absolute (T_J(TRIP)) temperature sensor. Activation of the sensor will cause

an overheated channel to switch OFF to prevent destruction. The device restarts when the IN pin is set to low

for t > t_{IN(RESETDELAY)}and the temperature has decreased below T_J(TRIP)- ∆T_J(TRIP). Under certain undervoltage

shutdown conditions (for example below V_S(EXT,DYN)) the latched fault might be reset.

Data Sheet

28

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

t_{IN(RESETDELAY)}

IN

I_L

t

t_OFF(TRIP)

t_{OFF (TRIP)}

I_CL(1)

I_CL(0)

t

T_J

T_J(TRIP)

T_A

t

I_IS

I

IS(FAULT)

0

Figure 26 Overload Protection

The current sense exact signal timing can be found in the Chapter 5.4. It is represented here only for device’s

behavior understanding.

In order to allow the device to detect overtemperature conditions and react effectively, it is recommended to

limit the power dissipation below P_TOT(parameter 4.1.15).

5.4

Diagnostic Functions

For diagnosis purposes, the BTS50010-1TAD provides a combination of digital and analog signal at pin IS.

5.4.1

IS Pin

The BTS50010-1TAD provides an enhanced current sense signal called I_ISat pin IS. As long as no “hard” failure

mode occurs (short circuit to GND / overcurrent / overtemperature) and the condition V_IS≤ V_OUT- 5 V is fulfilled,

a proportional signal to the load current is provided. The complete IS pin and diagnostic mechanism is

described in Figure 27. The accuracy of the sense current depends on temperature and load current. In case

of failure, a fixed I_IS(FAULT)is provided. In order to enable the fault current reporting, the condition V_S- V_OUT> 2 V

must be fulfilled. In order to get the fault current in the specified range, the condition V_S- V_IS≥ 5 V must be

fulfilled.

Data Sheet

29

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

V_s

R_VS

R_SenseMos

V_S-V_OUT>2V

I_IS(FAULT)

( I_L/ dk_ILIS) ± I_IS(0)

FAULT

Z_IS(AZ)

&

1

IS

0

Figure 27 Diagnostic Block Diagram

5.4.2

SENSE Signal in Different Operation Modes

Table 5

Sense Signal, Function of Operation Mode¹⁾

Operation mode

Normal operation

Short circuit to GND

Overtemperature

Short circuit to VS

Open Load

Input Level

Output Level V_OUTDiagnostic Output (IS)²⁾

LOW (OFF)

~ GND

GND

~ GND

V_S

I_IS(OFF)

Z

I_IS(OFF)

Inverse current

> V_S

~ V_S

< V_S

GND

~ GND

V_S

I_IS(OFF)

Normal operation

Overcurrent condition

Short circuit to GND

Overtemperature (after the event)

Short circuit to VS

Open Load

HIGH (ON)

I_IS= (I_L/ dk_ILIS) ± I_IS0

I_IS= (I_L/ dk_ILIS) ± I_IS0or I_IS(FAULT)

I_IS(FAULT)

I_IS< I_L/ dk_ILIS± I_IS0

V_S

I_IS0

Inverse current

> V_S

<I_IS0

1) Z = High Impedance

2) See Chapter 5.4.3 for Current Sense Range and Improved Current Sense Accuracy.

5.4.3

SENSE Signal in the Nominal Current Range

Figure 28 and Figure 29 show the current sense as function of the load current in the power DMOS. Usually, a

pull-down resistor R_ISis connected to the current sense pin IS. A typical value is 1 kΩ. The dotted curve

represents the typical sense current, assuming a typical dk_ILISfactor value. The range between the two solid

curves shows the sense accuracy range that the device is able to provide, at a defined current.

I_L

dk_ILIS

I_IS

=

+ I_IS0with (I_IS≥ 0)

(5.3)

Data Sheet

30

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

where the definition of dk_ILISis:

I_L4− I_L1

I_IS4− I_IS1

dk_ILIS

=

(5.4)

(5.5)

and the definition of I_IS0is:

I_L1

I_IS0= I_IS1

−

dk_ILIS

3.5

3

2.5

2

1.5

1

0.5

I_IS0(max)

0

20

I_L1

40

I_L2

60

80

I_L3

100

120

140

160

I_L4

I_L[A]

Figure 28 Current Sense for Nominal and Overload Condition

5.4.3.1 SENSE Signal Variation and Calibration

In some applications, an enhanced accuracy is required around the device nominal current range I_L(NOM). To

achieve this accuracy requirement, a calibration on the application is possible. After two point calibration, the

BTS50010-1TAD will have a limited I_ISvalue spread at different load currents and temperature conditions. The

I_ISvariation can be described with the parameters ∆(dk_ILIS(cal)) and the ∆I_IS0(cal). The blue solid line in Figure 29

is the current sense ratio after the two point calibration at a given temperature. The slope of this line is defined

as follows:

I_IS(cal)2− I_IS(cal)1

1

=

dk_ILIS(cal)I_L(cal)2− I_L(cal)1

(5.6)

Data Sheet

31

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

The offset is defined as follows:

I_L(cal)1

dk_ILIS(cal)

I_L(cal)2

dk_ILIS(cal)

I_IS0(cal)= I_IS(cal)1

−

= I_IS(cal)2

−

(5.7)

The bluish area in Figure 29 is the range where the current sense ratio can vary across temperature and load

current after performing the calibration. The accuracy of the load current sensing is improved and, given a

sense current value I_IS(measured in the application), the load current can be calculated as follow, using the

absolute value for ∆(dk_ILIS(cal)) instead of % values:

I_L= dk_ILIS(cal)

×

(

1 + ∆(dk_ILIS(cal)

)

×

(

I_IS− I_IS0(cal)− ∆I_IS0(cal)

)

(5.8)

where dk_ILIS(cal)is the current sense ratio measured after two-points calibration (defined in Equation (5.6)),

_IS0(cal)is the current sense offset (calculated after two points calibration, see Equation (5.7)), and ∆I_IS0(cal)is the

I

additional variation of the individual offset over life time and temperature. For a calibration at 25°C ∆I_IS0(cal)

varies over temperature and life time for all positive ∆I_IS0(cal)within the differences of the temperature

dependent Max. limits. All negative ∆I_IS0(cal)vary within the differences of the temperature dependent Min.

limits.

For positive I_IS0(cal)values (I_IS0(cal)> 0):

Max I_IS0(@T_J= 150°C)

−

Max I_IS0(@T_J= 25°C) ≤ ∆I_IS0(cal)≤ Max I_IS0(@T_J= -40°C)

−

Max I_IS0(@T_J= 25°C)

(5.9)

For negative I_IS0(cal)values (I_IS0(cal)< 0):

Min I_IS0(@T_J= 150°C)

−

Min I_IS0(@T_J= 25°C) ≥ ∆I_IS0(cal)≥ Min I_IS0(@T_J= -40°C)

−

Min I_IS0(@T_J= 25°C)

(5.10)

Equation (5.8) actually provides four solutions for load current, considering that ∆(dk_ILIS(cal)) and ∆I_IS0(cal)can

be both positive and negative. The load current I_Lfor any sense current I_ISwill spread between a minimum I_L

value resulting from the combination of lowest ∆(dk_ILIS(cal)) value and highest ∆I_IS0(cal)and a maximum I_Lvalue

resulting from the combination of highest ∆(dk_ILIS(cal)) value and lowest ∆I_IS0(cal)

.

Data Sheet

32

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

I_IS

1/dk_ILIS(min)

Δdk_ILIS(cal)

1/dk_ILIS(cal)

Δdk_ILIS(cal)

1/dk_ILIS(max)

I_IS(cal)2

I_IS

I_IS(cal)1

ΔI_IS0(cal)

I_IS0(cal)

Max I_L

Min I_LTyp I_L

I_L

I_L(cal)1

I_L(cal)2

ΔI_IS0(cal)

Figure 29 Improved Current Sense Accuracy after 2-Point Calibration

Data Sheet

33

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Functional Description

5.4.3.2 SENSE Signal Timing

Figure 30 shows the timing during settling and disabling of the sense.

t_{OF F}<t_{IN(RESETD EL AY)}

V_IN

t_{OF F}>t_{IN(RESETD EL AY)}

Short /

Overtemp.

t

V_OUT

I_IS

I_IS(fault)

I_{IS 1.. 4}

t

latch

no

reset

V_IN

t

Short

circuit

t

t_{O N}

I_L

90% of

I_Lstatic

t

V_OUT

I_IS

3V

t_{s IS(O N)}

t_{pIS(O N)_90}

t

I_IS

90% of

I_Sstatic

I_IS(fault)

I_{IS 1.. 4}

t_{s IS(LC)}

t

t_{pIS(FAU LT)}

Figure 30 Fault Acknowledgement

5.4.3.3 SENSE Signal in Case of Short Circuit to V_S

In case of a short circuit between OUT and VS, a major part of the load current will flow through the short

circuit. As a result, a lower current compared to the nominal operation will flow through the DMOS of the

BTS50010-1TAD, which can be recognized at the current sense signal.

5.4.3.4 SENSE Signal in Case of Over Load

An over load condition is defined by a current flowing out of the DMOS reaching the current over load I_CLor the

junction temperature reaches the thermal shutdown temperature T_J(TRIP). Please refer to Chapter 5.3.6 for

details. In that case, the SENSE signal will be in the range of I_IS(FAULT)when the IN pin stays HIGH.

This is a device with latch functionality. The state of the device will remain and the sense signal will remain on

I_IS(FAULT)until a reset signal comes from the IN pin. For example, when a thermal shutdown occurs, even when

the over temperature condition has disappeared, the DMOS can only be reactivated when a reset signal is sent

to the IN pin.

Data Sheet

34

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

6

Electrical Characteristics BTS50010-1TAD

6.1

Electrical Characteristics Table

Table 6

Electrical Characteristics: BTS50010-1TAD

V_S= 8 V to 18 V, T_J= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Operating and Standby Currents

Operating Current (Channel I_GND(ACTIVE)

Active)

–

1.2

8

3

mA V_IN≥ 2.2 V

P_6.1.1

P_6.1.2

Standby Current for Whole I_VS(OFF)

Device with Load

18

µA ¹⁾V_S= 18 V

V_OUT= 0 V

V_IN≤ 0.8 V

T_J≤ 85°C

See Page 41

Maximum Standby Current I_VS(OFF)

for Whole Device with Load

–

22

130

µA V_S= 18 V

V_OUT= 0 V

P_6.1.3

V_IN≤ 0.8 V

T_J≤ 150°C

See Page 41

Power Stage

ON-State Resistance in

Forward Condition

R_DS(ON)

–

1.6

2

2.0

3.2

mΩ I_L= 150 A

V_IN≥ 2.2 V

P_6.1.4

P_6.1.5

T_J= 150°C

See Page 42

ON-State Resistance in

Forward Condition, Low

Battery Voltage

R_DS(ON)

mΩ I_L= 20 A

V_IN≥ 2.2 V

V_S= 5.5 V

T_J= 150°C

See Page 42

ON-State Resistance in

Forward Condition

R_DS(ON)

R_DS(INV)

–

1.0

1.6

1.0

–

mΩ ¹⁾I_L= 150 A

V_IN≥ 2.2 V

P_6.1.6

P_6.1.7

P_6.1.8

T_J= 25°C

See Page 42

ON-State Resistance in

Inverse Condition

2.1

–

mΩ I_L= -150 A

V_IN≥ 2.2 V

T_J= 150°C

See Figure 12

mΩ ¹⁾I_L= -150 A

V_IN≥ 2.2 V

ON-State Resistance in

Inverse Condition

T_J= 25°C

See Figure 12

Data Sheet

35

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Table 6

Electrical Characteristics: BTS50010-1TAD (cont’d)

V_S= 8 V to 18 V, T_J= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Nominal Load Current

I_L(NOM)

V_DS(CL)

40

48

–

A

T_A= 85°C²⁾

T_J≤ 150°C

P_6.1.9

Drain to Source Smart

Clamp Voltage V_DS(CL)= V_S-

V_OUT

28

–

46

V

I_DS= 50 mA

See Page 44

P_6.1.11

1)

Output Leakage Current

Turn ON Slew Rate

I_L(OFF)

–

3

15

µA

V ≤ 0.8 V

P_6.1.13

P_6.1.14

IN

V

_OUT= 0 V

T_J≤ 85°C

I_L(OFF)

20

110

µA V_IN≤ 0.8 V

V_OUT= 0 V

T_J= 150°C

dV_ON/dt

-dV_OFF/dt

t_ON

0.05 0.23 0.5

V/µs R_L= 0.5 Ω

V_S= 13.5 V

P_6.1.15

P_6.1.16

P_6.1.17

P_6.1.18

P_6.1.19

P_6.1.20

P_6.1.21

V_OUT= 25% to 50% V_S

See Figure 8

See Page 42

Turn OFF Slew Rate

V_OUT= 50% to 25% V_S

0.05 0.25 0.55 V/µs

Turn ON Time to

V_OUT= 90% V_S

–

175

315

60

700

735

150

520

–

µs

Turn OFF Time to

V_OUT= 10% V_S

t_OFF

Turn ON Time to

V_OUT= 10% V_S

t_ON(DELAY)

t_OFF(DELAY)

E_ON

Turn OFF Time to

230

7

V_OUT= 90% V_S

Switch ON Energy

mJ ¹⁾R_L= 0.5 Ω

V_S= 13.5 V

See Page 43

Switch OFF Energy

E_OFF

–

5

–

mJ ¹⁾R_L= 0.5 Ω

V_S= 13.5 V

P_6.1.22

See Page 43

Data Sheet

36

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Table 6

Electrical Characteristics: BTS50010-1TAD (cont’d)

V_S= 8 V to 18 V, T_J= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Input Pin

LOW Level Input Voltage

HIGH Level Input Voltage

Input Voltage Hysteresis

LOW Level Input Current

HIGH Level Input Current

Protection: Loss of Ground

V_IN(L)

V_IN(H)

V_IN(HYS)

I_IN(L)

–

0.8

–

V

See Page 44

P_6.1.23

P_6.1.24

P_6.1.25

P_6.1.26

P_6.1.27

2.2

–

V

See Page 44

1)

200

–

mV

8

–

µA V_IN= 0.8 V

µA V_IN≥ 2.2 V

I_IN(H)

–

80

Output Leakage Current

while Module GND

Disconnected

I_{OUT(GND_M)}

0

20

110

µA ¹⁾³⁾V_S= 18 V

V_OUT= 0 V

P_6.1.28

IS a IN pins open

GND pin open

T_J= 150°C

See Figure 17

Output Leakage Current

While Device GND

Disconnected

I_OUT(GND)

µA V_S= 18 V

P_6.1.29

GND pin open

V_IN≥ 2.2 V

1 kΩ pull down

from IS to GND

4.7 kΩ to IN pin

T_J= 150°C

See Figure 17

See Page 45

Protection: Reverse Polarity

ON-State Resistance in

Reverse Polarity

R_DS(REV)

R_VS

–

2.2

–

mΩ V_S= 0 V

_GND= V_IN= 16 V

P_6.1.30

P_6.1.31

P_6.1.32

V

I_L= -20 A

T_J= 150°C

See Figure 22

ON-State Resistance in

Reverse Polarity

1.1

60

mΩ ¹⁾V_S= 0 V

_GND= V_IN= 16 V

V

I_L= -20 A

T_J= 25°C

See Page 45

Integrated Resistor

90

Ω

T_J= 25°C

Data Sheet

37

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Table 6

Electrical Characteristics: BTS50010-1TAD (cont’d)

V_S= 8 V to 18 V, T_J= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Protection: Overvoltage

Overvoltage Protection

V_Sto GND Pin

V_{S(AZ)_GND}

V_{S(AZ)_IS}

64

70

80

V

See Figure 21

See Page 44

P_6.1.33

Overvoltage Protection

V_Sto IS Pin

GND and IN pin P_6.1.34

open

See Figure 21

See Page 44

Protection: Overload

Current Trip Detection Level I_CL(0)

150

160

–

190

200

220

16

–

A

V_S= 13.5 V, static P_6.1.35

T_J= 150°C

See Figure 26

I_CL(0)

–

A

V_S= 13.5 V, static

T_J= -40 ... 25°C

See Figure 26

¹⁾V_S= 13.5 V

dI_L/dt = 1 A/µs

See Page 45

Current Trip Maximum Level I_CL(1)

270

A

1)

Overload Shutdown Delay

Time

t_OFF(TRIP)

–

µs

P_6.1.36

Thermal Shutdown

Temperature

T_J(TRIP)

150

–

170¹⁾200¹⁾°C

See Figure 26

P_6.1.37

P_6.1.38

1)

Thermal Shutdown

Hysteresis

∆T_J(TRIP)

10

–

K

Diagnostic Function: Sense Pin

1)

Sense Signal Current in Fault I_IS(FAULT)

Condition

3.5

6

8

mA

V

= 4.5 V

P_6.1.40

P_6.1.57

IN

V_S- V_IS≥ 5 V

1)

Sense Signal Saturation

Current

I_IS(LIM)

V = 4.5 V

IN

V_S- V_IS≥ 5 V

Data Sheet

38

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Table 6

Electrical Characteristics: BTS50010-1TAD (cont’d)

V_S= 8 V to 18 V, T_J= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Diagnostic Function: Current Sense Ratio Signal in the Nominal Area, Stable Current Load Condition

Current Sense Differential

Ratio

dk_ILIS

44500 52100 59100 –

I_L4= 150 A

I_L1= 20 A

See

P_6.1.41

Equation (5.4)

4)

Calculated Sense Offset

Current

I_L= I_L0= 0 A

I_IS0

-235 20

274

180

80

µA

V ≥ 2.2 V

P_6.1.42

IN

V_S- V_IS≥ 5 V

T_J= -40°C

See Figure 28

1)4)

I_IS0

-162

-88

8

V ≥ 2.2 V

IN

V_S- V_IS≥ 5 V

T_J= 25°C

See Figure 28

4)

I_IS0

-4

V ≥ 2.2 V

IN

V_S- V_IS≥ 5 V

T_J= 150°C

See Figure 28

Sense Current

I_L= I_L1= 20 A

I_IS1

I_IS2

I_IS3

I_IS4

103

442

392

776

702

µA V_IN≥ 2.2 V

V_S- V_IS≥ 5 V

See Figure 28

1)

P_6.1.43

P_6.1.44

P_6.1.45

P_6.1.46

P_6.1.12

Sense Current

I_L= I_L2= 40 A

1131 µA

V ≥ 2.2 V

IN

V_S- V_IS≥ 5 V

See Figure 28

1)

Sense Current

I_L= I_L3= 80 A

1.12 1.54 1.99 mA

V ≥ 2.2 V

IN

V_S- V_IS≥ 5 V

See Figure 28

Sense Current

I_L= I_L4= 150 A

2.30 2.89 3.49 mA V_IN≥ 2.2 V

V_S- V_IS≥ 5 V

See Figure 28

Current Sense Ratio Spread ∆(dk_{ILIS(cal)(-40°C)}

between -40°C and 25°C for

)

-3

–

4.5

%

¹⁾dk_{ILIS(cal)(40°C)}

/

dk_{ILIS(cal)(25°C)}

)

Repetitive Operation

See Figure 29

See Page 46

Current Sense Ratio Spread ∆(dk_{ILIS(cal)(150°C)}

between 150°C and 25°C for

)

-8.5

–

-3

%

¹⁾dk_{ILIS(cal)(150°C)}

dk_{ILIS(cal)(25°C)}

/

P_6.1.39

)

Repetitive Operation

See Figure 29

See Page 46

Data Sheet

39

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Table 6

Electrical Characteristics: BTS50010-1TAD (cont’d)

V_S= 8 V to 18 V, T_J= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Diagnostic Function: Diagnostic Timing in Normal Condition

Current Sense Propagation t_{pIS(ON)_90}

Time until 90% of I_ISStable

After Positive Input Slope on

IN Pin

0

–

700

µs V_IN≥ 2.2 V

V_S= 13.5 V

P_6.1.48

R_L= 0.5 Ω

See Figure 30

Current Sense Settling Time t_sIS(ON)

to I_ISStable after Positive

Input Slope on IN Pin

–

3000 µs V_IN≥ 2.2 V

V_S= 13.5 V

P_6.1.49

R_L= 0.5 Ω

See Figure 30

I_ISLeakage Current when IN I_IS(OFF)

Disabled

0

–

0.05

50

1

–

µA V_IN≤ 0.8 V

P_6.1.50

P_6.1.51

R_IS= 1k Ω

1)

Current Sense Settling Time t_sIS(LC)

after Load Change

µs

V ≥ 2.2 V

IN

dI_L/dt = 0.4 A/µs

Diagnostic Function: Diagnostic Timing in Overload Condition

1)

Current Sense Propagation t_pIS(FAULT)

Time for Short Circuit

Detection

0

–

100

V ≥ 2.2 V

P_6.1.52

P_6.1.53

IN

from V_OUT= V_S-

3 V to I_{IS(FAULT)_min}

See Figure 30

1)

Delay Time to Reset Fault

Signal at IS Pin after Turning

OFF V_IN

t_{IN(RESETDELAY)}

250

1000 1500 µs

Timing: Inverse Behavior

Propagation Time From

t_{p,INV,noFAULT}

t_{p,noINV,FAULT}

–

4

–

µs ¹⁾See Figure 13 P_6.1.55

µs ¹⁾See Figure 13 P_6.1.56

V_OUT> V_Sto Fault Disable

Propagation Time from

10

V_OUT< V_Sto Fault Enable

1) Not subject to production test, specified by design.

2) Value is calculated from the parameters typ. R_thJA(2s2p), with 65 K temperature increase, typ. and max. R_DS(ON)

3) All pins are disconnected except V_Sand OUT.

.

4) Value is calculated from the parameters dk_ILISand I_IS1

.

Data Sheet

40

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

6.2

Typical Performance Characteristics

Standby Current for Whole Device with Load,

I_VS(OFF)= f(V_S, T_J)

I_VS(OFF)= f(T_J) at V_S= 13.5 V

35

20

18

16

14

12

10

8

-40°C

0°C

30

25

20

15

10

5

25°C

85°C

100°C

125°C

150°C

6

4

2

0

-40 -20

0

20 40 60 80 100 120 140 160

5

10

15

20

25

30

T_J[°C]

V_S[V]

GND Leakage Current

I_GND(OFF)= f(V_S, T_J)

I_GND(OFF)= f(T_J) at V_S= 13.5 V

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-40°C

0°C

25°C

85°C

100°C

125°C

150°C

0

5

10

15

20

25

30

-40 -20

0

20 40 60 80 100 120 140 160

V_S[V]

T_J[°C]

Data Sheet

41

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

ON State Resistance

R_DS(ON)= f(V_S, T_J), I_L= 20 A ... 150 A

R_DS(ON)= f(T_J),V_S= 13.5 V, I_L= 20 A ... 150 A

3.0

2.0

1.5

1.0

0.5

0.0

-40°C

25°C

2.5

2.0

1.5

1.0

0.5

0.0

150°C

0

5

10

15

20

25

30

-40 -20

0

20 40 60 80 100 120 140 160

V_S[V]

T_J[°C]

Turn ON Time

Turn OFF Time

t_ON= f(V_S, T_J), R_L= 0.5 Ω

t_OFF= f(V_S, T_J), R_L= 0.5 Ω

1000

-40°C

25°C

-40°C

25°C

150°C

800

600

400

200

0

800

600

400

200

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S[V]

Data Sheet

42

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Slew Rate at Turn ON

Slew Rate at Turn OFF

dV_ON/ dt = f(V_S, T_J), R_L= 0.5 Ω

dV_OFF/ dt = f(V_S, T_J), R_L= 0.5 Ω

0.5

-40°C

25°C

0.4

0.3

0.2

0.1

0.0

0.4

0.3

0.2

0.1

0.0

150°C

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S[V]

Switch ON Energy

Switch OFF Energy

E_ON= f(V_S, T_J), R_L= 0.5 Ω

E_OFF= f(V_S, T_J), R_L= 0.5 Ω

60

-40°C

25°C

50

25°C

50

150°C

40

30

20

10

0

30

20

10

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S[V]

Data Sheet

43

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Drain to Source Clamp Voltage

Overvoltage Protection

V_DS(CL)= f(T_J), I_L= 50 mA

V_{S(AZ)_GND}= f(T_J), V_{S(AZ)_IS}= f(T_J)

44

80

78

76

74

72

70

68

66

64

62

60

42

40

38

36

34

32

30

-40 -20

0

20 40 60 80 100 120 140 160

-40 -20

0

20 40 60 80 100 120 140 160

T_J[°C]

LOW Level Input Voltage

HIGH Level Input Voltage

V_IN(L)= f(V_S, T_J)

V_IN(H)= f(V_S, T_J)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40°C

25°C

-40°C

25°C

150°C

0.0

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S[V]

Data Sheet

44

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Output Leakage Current while Device GND

Overload Detection Current

Disconnected, I_OUT(GND)= f(V_S, T_J)

I_CL(1)= f(dI_L/dt, T_J), V_S= 13.5 V

40

400

-40°C

25°C

350

35

25°C

150°C

300

30

150°C

25

20

15

10

5

250

200

150

100

50

0

2

4

6

8

10

0

5

10

15

20

25

30

dI_L/dt [A/µsec]

V_S[V]

Resistance in ReverSave™

R_DS(REV)= f(V_S, T_J), I_L= -150 A

R_DS(REV)= f(V_S, T_J), I_L= -20 A

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-40°C

25°C

-40°C

25°C

2.5

2.0

1.5

1.0

0.5

0.0

150°C

4

6

8

10

12

14

16

4

6

8

10

12

14

16

V_S[V]

Data Sheet

45

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Electrical Characteristics BTS50010-1TAD

Input Current

I_IN= f(T_J); V_S= 13.5 V; V_IN(L)= 0.8V; V_IN(H)= 5.0 V

I_IN(H)= f(V_IN, T_J); V_S= 13.5 V

60

70

-40°C

I_IN_L

25°C

60

I_IN_H

50

150°C

50

40

30

20

10

0

40

30

20

10

0

-40 -20

0

20 40 60 80 100 120 140 160

0

2

4

6

8

10

12

14

T_J[

°C]

V_IN[V]

GND current

Current Sense Differential Ratio

I

_GND(ACTIVE)= f(V_S, T_J); V_IN= 2.2 V

dk_ILIS= f(T_J)

1.6

55

53

51

49

47

45

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40°C

25°C

150°C

-50

0

50

100

150

0

5

10

15

20

25

30

T_J[°C]

V_S[V]

Data Sheet

46

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Application Information

7

Application Information

Note:

The following information is given as a hint for the implementation of the device only and shall not

be regarded as a description or warranty of a certain functionality, condition or quality of the device.

V_BAT

R/L cable

(A)

ext. components acc.

to either (A) or (B)

required, not both

Z_A

Z_B

R_S

C_VS

V_DD

C_S

VS

VDD

R_IN

OUT

IN

IS

GPIO

Micro controller

A/D IN

C_OUT

R_{IS_PROT}

R/L cable

C_IN

GND

VSS

R_IS

C_SENSE

(B)

R_GND

Load

Figure 31 Application Diagram with BTS50010-1TAD

Note:

This is a very simplified example of an application circuit. The function must be verified in the real

application.

Data Sheet

47

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Application Information

Table 7

Reference

R_GND

Bill of material

Value

Purpose

4 Ω

Resistor of RC snubber network Option B, damps possible oscillation of the

VS pin voltage in combination with C_VS

R_IN

4.7 kΩ

Protection of the microcontroller during overvoltage, reverse polarity

allows BTS50010-1TAD channels OFF during loss of ground

R_IS

1 kΩ

Sense resistor

R_{IS_PROT}

4.7 kΩ

Protection of the microcontroller during overvoltage

Protection of the BTS50010-1TAD during reverse polarity

R_S

Z_a

Z_b

3.9 Ω

Resistor of RC snubber network Option A, damps possible oscillation of the

VS pin voltage with improved EMC behavior

Zener diode

Protection of the BTS50010-1TAD during loss of load with primary charged

inductance, see Chapter 5.3.2

Protection of the BTS50010-1TAD during loss of battery or against huge

negative pulse at OUT (like ISO pulse 1), see Chapter 5.3.2

C_SENSE

C_VS

10 nF

Sense signal filtering

100 nF

10 nF

Improved EMC behavior (in layout, pls. place close to the pins)

C_OUT

C_IN

150 nF

BTS50010-1TAD tends to latched switch-off due to short negative

transients on supply pin; C_INautomatically resets the device

C_S

4.7 µF

Capacitor of RC snubber network Option A, damps possible oscillation of

the VS pin voltage with improved EMC behavior

7.1

Further Application Information

•

Please contact us for information regarding the pin FMEA

For further information you may contact http://www.infineon.com/

Data Sheet

48

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Package Outlines

8

Package Outlines

Dimensions in mm

Figure 32 PG-TO-263-7-10 (RoHS-Compliant)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant

with government regulations the device is available as a green product. Green products are RoHS-Compliant

(i.e. Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

For further information on alternative packages, please visit our website:

http://www.infineon.com/packages.

Dimensions in mm

Data Sheet

49

Rev. 1.1

2017-03-30

BTS50010-1TAD

Smart High-Side Power Switch

Revision History

9

Revision History

Revision

Date

Changes

1.1

2017-03-30 Chapter “5.1.4”: add “no turn on” graph

Update footnote 8) page 11

1.0

2016-09-16 Data Sheet created from Preliminary Data Sheet.

Data Sheet

50

Rev. 1.1

2017-03-30

Please read the Important Notice and Warnings at the end of this document

Trademarks of Infineon Technologies AG

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,

DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,

HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,

OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™.

Trademarks updated November 2015

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on technology, delivery terms

Edition 2017-03-30

Published by

Infineon Technologies AG

81726 Munich, Germany

event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest

characteristics ("Beschaffenheitsgarantie").

Infineon Technologies Office (www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer's compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer's products and any use of the product of

Infineon Technologies in customer's applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer's technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to

such application.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies office.

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or any

consequences of the use thereof can reasonably be

expected to result in personal injury.


型号：	BTS50010-1TAD
厂家：	Infineon
描述：	BTS50010-1TAD 是一款 1.0mΩ 智能单通道高边电源开关，嵌入 PG-TO-263-7-10 封装，提供保护功能和诊断。其包含 Infineon® ReverSave™ 功能。功率晶体管由带电荷泵的 N 通道功率 MOSFET 构成。其专为在恶劣的汽车环境中驱动高达 80A 的高电流负载而设计，适用于开关电池耦合、配电开关、加热器、电热塞等应用。电池开关驱动泵电源开关晶体管
文件：	总51页 (文件大小：897K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTS50010-1TAD [INFINEON]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E