BTS5045-1EJA [INFINEON]
BTS5045-1EJA 是一款 45 mΩ 智能单通道高边电源开关，嵌入 PG-DSO-8-43 EP，散热焊盘封装，提供保护功能和诊断。功率晶体管由带电荷泵的 N 通道垂直功率 MOSFET 构成。该设备被集成到 Smart6 技术中。专门设计用于驱动最高 1 * P27W /P21W的灯以及恶劣汽车环境中的 LED。;
| 型号： | BTS5045-1EJA |
| 厂家： | 
Infineon |
| 描述： | BTS5045-1EJA 是一款 45 mΩ 智能单通道高边电源开关，嵌入 PG-DSO-8-43 EP，散热焊盘封装，提供保护功能和诊断。功率晶体管由带电荷泵的 N 通道垂直功率 MOSFET 构成。该设备被集成到 Smart6 技术中。专门设计用于驱动最高 1 * P27W /P21W的灯以及恶劣汽车环境中的 LED。 开关 驱动 泵 电源开关 晶体管 |
| 文件： | 总53页 (文件大小：2051K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PROFET™+ 12V
BTS5045-1EJA
Smart High-Side Power Switch
Single Channel, 45mΩ
Data Sheet
Rev. 2.2, 2013-09-06
Automotive Power
BTS5045-1EJA
Table of Contents
Table of Contents
1
2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3.1
3.2
3.3
4
4.1
4.2
4.3
4.3.1
4.3.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PCB set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Output ON-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.1
5.2
5.3
5.3.1
5.3.2
5.4
5.5
6
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
6.1
6.2
6.3
6.4
6.5
6.5.1
6.5.2
6.6
7
7.1
7.2
7.3
Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . 29
SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
SENSE Signal with OUT in Short Circuit to VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Electrical Characteristics Diagnostic Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
7.3.1
7.3.2
7.3.3
7.3.3.1
7.3.3.2
7.3.3.3
7.3.4
7.3.5
7.3.6
7.4
8
8.1
8.2
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
DEN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Data Sheet
PROFET™+ 12V
2
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Table of Contents
8.3
8.4
Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
9
9.1
Characterization Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Minimum Functional Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Undervoltage Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Current Consumption Channel active . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Standby Current for Whole Device with Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Output Voltage Drop Limitation at Low Load Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Drain to Source Clamp Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Slew Rate at Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Slew Rate at Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Turn ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Turn OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Turn ON / OFF matching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Switch ON Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Switch OFF Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Overload Condition in the Low Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Overload Condition in the High Voltage Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Diagnostic Mechanism . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Current Sense at no Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Open Load Detection Threshold in ON State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Sense Signal Maximum Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Sense Signal maximum Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Input Voltage Threshold ON to OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Input Voltage Threshold OFF to ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Input Voltage Hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Input Current High Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
9.1.1
9.1.2
9.1.3
9.1.4
9.2
9.2.1
9.2.2
9.2.3
9.2.4
9.2.5
9.2.6
9.2.7
9.2.8
9.2.9
9.3
9.3.1
9.3.2
9.4
9.4.1
9.4.2
9.4.3
9.4.4
9.5
9.5.1
9.5.2
9.5.3
9.5.4
10
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
10.1
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
11
12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Data Sheet
PROFET™+ 12V
3
Rev. 2.2, 2013-09-06
Smart High-Side Power Switch
BTS5045-1EJA
1
Overview
Application
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Most suitable for loads with high inrush current, such as lamps
Basic Features
•
•
•
•
•
•
•
•
•
One channel device
Very low stand-by current
PG-DSO-8-43 EP
3.3 V and 5 V compatible logic inputs
Electrostatic discharge protection (ESD)
Optimized electromagnetic compatibility
Logic ground independent from load ground
Very low power DMOS leakage current in OFF state
Green product (RoHS compliant)
AEC qualified
Description
The BTS5045-1EJA is a 45 mΩ single channel Smart High-Side Power Switch, embedded in a PG-DSO-8-43 EP,
Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by an N-channel
vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed
to drive lamps up to 1 * P27W/P21W, as well as LEDs in the harsh automotive environment.
Table 1
Product Summary
Parameter
Symbol
VS(OP)
VS(LD)
RDS(ON)
IL(NOM)
kILIS
Value
5 V ... 28 V
41 V
Operating voltage range
Maximum supply voltage
Maximum ON state resistance at TJ = 150 °C
Nominal load current
90 mΩ
4 A
Typical current sense ratio
1500
Minimum current limitation
IL5(SC)
IS(OFF)
25 A
Maximum standby current with load at TJ = 25 C
500 nA
Type
Package
Marking
BTS5045-1EJA
PG-DSO-8-43 EP
5045-EJA
Data Sheet
PROFET™+ 12V
4
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Overview
Diagnostic Functions
•
•
•
•
•
•
Proportional load current sense
Open load in ON and OFF
Short circuit to battery and ground
Overtemperature
Stable diagnostic signal during short circuit
Enhanced kILIS dependency with temperature and load current
Protection Functions
•
•
•
•
•
•
•
Stable behavior during undervoltage
Reverse polarity protection with external components
Secure load turn-off during logic ground disconnect with external components
Overtemperature protection with restart
Overvoltage protection with external components
Voltage dependent current limitation
Enhanced short circuit operation
Data Sheet
PROFET™+ 12V
5
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Block Diagram
2
Block Diagram
VS
voltage sensor
internal
power
supply
over
T
temperature
clamp for
inductive load
gate control
&
charge pump
driver
logic
over current
switch limit
IN
ESD
protection
DEN
load current sense and
OUT
open load detection
IS
forward voltage drop detection
Block diagram.emf
GND
Figure 1
Block Diagram for the BTS5045-1EJA
Data Sheet
PROFET™+ 12V
6
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
1
2
8
7
GND
IN
OUT
OUT
3
4
6
5
DEN
IS
OUT
NC
Pinout Single.vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Pin
Symbol
GND
IN
Function
1
GrouND; Ground connection
2
INput channel; Input signal for channel activation
3
DEN
IS
Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device
Sense; Sense current of the selected channel
4
5
NC
Not Connected; No internal connection to the chip
OUTput; Protected high side power output channel1)
Voltage Supply; Battery voltage
6, 7, 8
OUT
VS
Cooling Tab
1) All output pins must be connected together on the PCB. All pins of the output are internally connected together. PCB traces
have to be designed to withstand the maximum current which can flow.
Data Sheet
PROFET™+ 12V
7
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
I S
VS
VS
IIN
IN
VIN
VDS
IDEN
IOUT
DEN
OUT
VDEN
IIS
VOUT
IS
GND
VIS
IGND
voltage and current convention single.vsd
Figure 3
Voltage and Current Definition
Data Sheet
PROFET™+ 12V
8
Rev. 2.2, 2013-09-06
BTS5045-1EJA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 2
Absolute Maximum Ratings 1)
TJ = -40°C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit Note /
Number
Test Condition
Min.
Max.
Supply Voltages
Supply voltage
VS
-0.3
0
–
–
28
16
V
V
–
P_4.1.1
P_4.1.2
Reverse polarity voltage
-VS(REV)
t < 2 min
TA = 25 °C
RL ≥ 4 Ω
R
GND = 150 Ω
2) RECU = 20 mΩ P_4.1.3
Cable= 16 mΩ/m
Cable= 1 μH/m,
Supply voltage for short
circuit protection
VBAT(SC)
0
–
24
V
R
L
l = 0 or 5 m
See Chapter 6
and Figure 52
Supply voltage for Load dump VS(LD)
protection
–
–
–
–
–
41
V
k
3) RI = 2 Ω
RL = 4 Ω
P_4.1.12
P_4.1.4
Short Circuit Capability
2)
Permanent short circuit
IN pin toggles
nRSC1
100
cycles tON = 300ms
Input Pins
Voltage at INPUT pin
VIN
-0.3
–
6
7
V
–
P_4.1.13
t < 2 min
Current through INPUT pin
Voltage at DEN pin
IIN
-2
–
–
2
mA
V
–
P_4.1.14
P_4.1.15
VDEN
-0.3
–
6
7
–
t < 2 min
Current through DEN pin
Sense Pin
IDEN
-2
–
2
mA
–
P_4.1.16
Voltage at IS pin
Current through IS pin
Power Stage
VIS
IIS
-0.3
-25
–
–
VS
V
–
–
P_4.1.19
P_4.1.20
50
mA
Load current
| IL |
–
–
–
–
IL(LIM)
A
–
P_4.1.21
P_4.1.22
Power dissipation (DC)
PTOT
1.6
W
TA = 85 °C
TJ < 150 °C
Maximum energy dissipation EAS
Single pulse
–
–
–
40
41
mJ
V
I
L(0) = 4 A
P_4.1.23
TJ(0) = 150 °C
VS = 13.5 V
Voltage at power transistor
VDS
–
–
P_4.1.26
Data Sheet
PROFET™+ 12V
9
Rev. 2.2, 2013-09-06
BTS5045-1EJA
General Product Characteristics
Table 2
TJ = -40°C to +150°C; (unless otherwise specified)
Absolute Maximum Ratings (cont’d)1)
Parameter
Symbol
Values
Typ.
Unit Note /
Number
Test Condition
Min.
Max.
Currents
Current through ground pin
I GND
-10
-150
–
10
20
mA
–
P_4.1.27
t < 2 min
Temperatures
Junction temperature
Storage temperature
ESD Susceptibility
ESD susceptibility (all pins)
TJ
-40
-55
–
–
150
150
°C
°C
–
–
P_4.1.28
P_4.1.30
TSTG
VESD
-2
-4
–
–
2
4
kV
kV
4) HBM
4) HBM
P_4.1.31
P_4.1.32
ESD susceptibility OUT Pin VESD
vs. GND and VS connected
ESD susceptibility
VESD
VESD
-500
-750
–
–
500
750
V
V
5) CDM
5) CDM
P_4.1.33
P_4.1.34
ESD susceptibility pin
(corner pins)
1) Not subject to production test. Specified by design.
2)EOL tests according to AECQ100-012. Threshold limit for short circuit failures: 100 ppm. Please refer to the legal
disclaimer for short-circuit capability on page 53 of this document.
3) VS(LD) is setup without the DUT connected to the generator per ISO 7637-1.
4) ESD susceptibility HBM according to EIA/JESD 22-A 114B.
5) “CDM” EIA/JESD22-C101 or ESDA STM5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
PROFET™+ 12V
10
Rev. 2.2, 2013-09-06
BTS5045-1EJA
General Product Characteristics
4.2
Functional Range
Table 3
Functional Range TJ = -40°C to +150°C; (unless otherwise specified)
Parameter
Symbol
Values
Typ.
13.5
–
Unit Note /
Test Condition
Number
Min.
Max.
18
Nominal operating voltage
VNOM
8
5
V
V
–
2)
P_4.2.1
P_4.2.2
Extended operating voltage VS(OP)
28
V = 4.5 V
IN
RL = 4 Ω
DS < 0.5 V
V
See Figure 15
1)
Minimum functional supply
voltage
VS(OP)_MIN
3.8
4.3
3.5
5
V
V
V = 4.5 V
P_4.2.3
P_4.2.4
IN
RL = 4 Ω
From IOUT = 0 A
to
V
DS < 0.5 V;
See Figure 15
1)
Undervoltage shutdown
VS(UV)
3
4.1
V = 4.5 V
IN
VDEN = 0 V
RL = 4 Ω
From VDS < 1 V;
to IOUT = 0 A
See Figure 15
See Figure 30
2)
Undervoltage shutdown
hysteresis
VS(UV)_HYS
IGND_1
–
–
850
3.5
–
6
mV
mA
–
P_4.2.13
P_4.2.5
Operating current channel
active
VIN = 5.5 V
V
DEN = 5.5 V
Device in RDS(ON)
VS = 18 V
See Figure 31
Standby current for whole
device with load (ambiente)
IS(OFF)
–
–
–
0.1
0.5
20
–
μA
μA
mA
1) VS = 18 V
P_4.2.7
P_4.2.10
P_4.2.8
V
OUT = 0 V
VIN floating
DEN floating
V
TJ ≤ 85 °C
See Figure 32
Maximum standby current for IS(OFF)_150
whole device with load
3
VS = 18 V
V
OUT = 0 V
VIN floating
DEN floating
V
TJ = 150 °C
See Figure 32
2) VS = 18 V
Standby current for whole
device with load, diagnostic
active
IS(OFF_DEN)
0.6
V
OUT = 0 V
VIN floating
DEN = 5.5 V
V
1) Test at TJ = -40°C only
Data Sheet
PROFET™+ 12V
11
Rev. 2.2, 2013-09-06
BTS5045-1EJA
General Product Characteristics
2) Not subject to production test. Specified by design.
Note:Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Thermal Resistance
Table 4
Thermal Resistance
Symbol
Parameter
Values
Typ.
5
Unit Note /
Test Condition
Number
Min.
Max.
1)
Junction to soldering point
Junction to ambient
RthJS
RthJA
–
–
–
–
K/W
K/W
P_4.3.1
P_4.3.2
1) 2)
40
1) Not subject to production test. Specified by design.
2)Specified Rthja value is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The
product (chip + package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70μm
Cu, 2 x 35 μm Cu). Where applicable, a thermal via array under the exposed pad contacts the first inner copper
layer. Please refer to Figure 4 and Figure 5.
4.3.1
PCB set up
70µm
1.5mm
35µm
PCB 2s2p.emf
0.3mm
Figure 4
2s2p PCB Cross Section
Data Sheet
PROFET™+ 12V
12
Rev. 2.2, 2013-09-06
BTS5045-1EJA
General Product Characteristics
PCB top view
1
2
3
4
8
7
6
5
COOLING
TAB
VS
thermique So8.vsd
Figure 5
PC Board Top and Bottom View for Thermal Simulation with 600mm² Cooling Area
4.3.2
Thermal Impedance
Figure 6
Typical Thermal Impedance. PCB set up according Figure 5
Data Sheet
PROFET™+ 12V
13
Rev. 2.2, 2013-09-06
BTS5045-1EJA
General Product Characteristics
100
90
80
70
60
50
40
30
1s0p
0
100
200
300
Area [mm2]
400
500
600
700
footprint
Figure 7
Typical Thermal Resistance. PCB set up 1s0p
Data Sheet
PROFET™+ 12V
14
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Power Stage
5
Power Stage
The power stage is built using an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-state Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature TJ. Figure 8
shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The
behavior in reverse polarity is described in Chapter 6.4.
100
85
90
80
70
60
50
40
30
20
10
0
75
65
55
45
35
25
15
-40
-10
20
50
80
Junction Temperature (Tj)
110
140
0
3
6
9
Supply Voltage VS (V)
12
15
18
Rdson_45.vsd
Figure 8
Typical ON-state Resistance
A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.
5.2
Turn ON/OFF Characteristics with Resistive Load
Figure 9 shows the typical timing when switching a resistive load.
IN
VIN_H
VIN_L
t
VOUT
dV/dt ON
dV/dt OFF
tON
90% VS
tOFF_DELAY
70% VS
30% VS
10% VS
tON_DELAY
tOFF
t
Switching times.vsd
Figure 9
Switching a Resistive Load Timing
Data Sheet
PROFET™+ 12V
15
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Power Stage
5.3
Inductive Load
5.3.1
Output Clamping
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device by
avalanche due to high voltages, there is a voltage clamp mechanism ZDS(AZ) implemented that limits negative
output voltage to a certain level (VS - VDS(AZ)). Please refer to Figure 10 and Figure 11 for details. Nevertheless,
the maximum allowed load inductance is limited.
VS
ZDS(AZ)
VDS
IN
LOGIC
IL
VBAT
OUT
GND
ZGND
VOUT
VIN
L, RL
Output clamp.svg
Figure 10 Output Clamp
IN
t
VOUT
VS
t
VS-VDS(AZ)
IL
t
Switching an inductance.vsd
Figure 11 Switching an Inductive Load Timing
Data Sheet
PROFET™+ 12V
16
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Power Stage
5.3.2
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTS5045-1EJA. This energy can be
calculated with following equation:
VS – VDS(AZ)
--------------------------------
RL
RL × IL
L
RL
⎛
⎞
⎠
------
E = VDS(AZ)
×
×
× ln 1 –
+ IL
(1)
--------------------------------
VS – VDS(AZ)
⎝
Following equation simplifies under the assumption of RL = 0 Ω.
VS
1
2
2
⎛
⎞
⎠
--
E = × L × I × 1 –
(2)
--------------------------------
VS – VDS(AZ)
⎝
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 12 for the
maximum allowed energy dissipation as a function of the load current.
1000
100
10
0
1
2
3
IL [A]
4
5
6
EAS45
Figure 12 Maximum Energy Dissipation Single Pulse, TJ_START = 150 °C; VS = 13.5V
5.4
Inverse Current Capability
In case of inverse current, meaning a voltage VINV at the OUTput higher than the supply voltage VS, a current IINV
will flow from output to VS pin via the body diode of the power transistor (please refer to Figure 13). The output
stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse. In that particular
case, the output stage is kept OFF until the inverse current disappears. If the channel is OFF, the diagnostic will
detect an open load at OFF. If the channel is ON, the diagnostic will detect open load at ON (the overtemperature
signal is inhibited). At the appearance of VINV, a parasitic diagnostic can be observed. After, the diagnosis is valid
and reflects the output state. At VINV vanishing, the diagnosis is valid and reflects the output state. During inverse
current, no protection functions are available.
Data Sheet
PROFET™+ 12V
17
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Power Stage
VBAT
VS
Gate driver
VINV
IL(INV)
Device
logic
INV
Comp.
OUT
GND
ZGND
inverse current.svg
Figure 13 Inverse Current Circuitry
Data Sheet
PROFET™+ 12V
18
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Power Stage
5.5
Electrical Characteristics Power Stage
Table 5
Electrical Characteristics: Power Stage
VS = 8 V to 18 V, TJ = -40°C to +150°C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
85
Unit Note /
Test Condition
Number
Min.
RDS(ON)_150 67
Max.
ON-state resistance per
channel
90
mΩ
IL = IL4 = 4 A
P_5.5.1
VIN = 4.5 V
TJ = 150 °C
See Figure 8
ON-state resistance per
channel
RDS(ON)_25
IL(NOM)
–
45
4
–
mΩ
A
1) TJ = 25 °C
P_5.5.21
P_5.5.2
Nominal load current
–
–
1) TA = 85 °C
TJ < 150 °C
Output voltage drop limitation VDS(NL)
at small load currents
–
10
47
25
53
mV
V
IL = IL0 = 50 mA P_5.5.4
See Figure 33
Drain to source clamping
voltage
VDS(AZ)
41
I
DS = 20 mA
P_5.5.5
P_5.5.6
P_5.5.8
See Figure 11
See Figure 34
V
DS(AZ) = [VS - VOUT
]
2)
Output leakage currentTJ ≤
85 °C
IL(OFF)
–
–
0.1
1.5
0.5
10
μA
μA
A
V floating
IN
V
OUT = 0 V
TJ ≤ 85 °C
Output leakage currentTJ =
150 °C
IL(OFF)_150
VIN floating
VOUT = 0 V
TJ = 150 °C
1) VS < VOUT
Inverse current capability
IL(INV)
–
3
–
P_5.5.9
Slew rate
30% to 70% VS
dV/dtON
0.1
0.25
0.5
V/μs RL = 4 Ω
VS = 13.5 V
P_5.5.11
See Figure 9
See Figure 35
See Figure 36
See Figure 37
See Figure 38
See Figure 39
Slew rate
70% to 30% VS
-dV/dtOFF
ΔdV/dt
0.1
-0.15
30
0.25
0
0.5
V/μs
V/μs
μs
P_5.5.12
P_5.5.13
P_5.5.14
P_5.5.15
P_5.5.16
P_5.5.17
P_5.5.18
Slew rate matching
dV/dtON - dV/dtOFF
0.15
230
230
50
Turn-ON time to VOUT = 90% tON
VS
100
100
0
Turn-OFF time to VOUT = 10% tOFF
VS
30
μs
Turn-ON / OFF matching
OFF - tON
ΔtSW
-50
10
μs
t
Turn-ON time to VOUT = 10% tON_delay
VS
35
100
100
μs
Turn-OFF time to VOUT = 90% tOFF_delay
10
35
μs
VS
Data Sheet
PROFET™+ 12V
19
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Power Stage
Table 5
Electrical Characteristics: Power Stage (cont’d)
VS = 8 V to 18 V, TJ = -40°C to +150°C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
0.8
Unit Note /
Test Condition
Number
Min.
Max.
Switch ON energy
EON
–
–
mJ
1) RL = 4 Ω
OUT = 90% VS
P_5.5.19
V
VS = 18 V
See Figure 40
Switch OFF energy
EOFF
–
0.7
–
mJ
1) RL = 4 Ω
P_5.5.20
VOUT = 10% VS
VS = 18 V
See Figure 41
1) Not subject to production test, specified by design.
2) Test at TJ = -40°C only
Data Sheet
PROFET™+ 12V
20
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Protection Functions
6
Protection Functions
The device provides integrated protection functions. These functions are designed to prevent the destruction of
the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal
operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground and the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pin.
In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the
BTS5045-1EJA to ensure switching OFF of channel.
In case of loss of module or device ground, a current (IOUT(GND)) can flow out of the DMOS. Figure 14 sketches
the situation.
ZGND can be either resistor or diode.
ZIS(AZ)
VS
ZD(AZ)
VBAT
ZDS(AZ)
IS
RSENSE
DEN
RDEN
IOUT(GND)
IN
LOGIC
RIN
OUT
ZDESD
GND
RIS
ZGND
Loss of ground protection single.svg
Figure 14 Loss of Ground Protection with External Components
6.2
Undervoltage Protection
Between VS(UV) and VS(OP), the undervoltage mechanism is triggered. VS(OP) represents the minimum voltage
where the switching ON and OFF can takes place. VS(UV) represents the minimum voltage the switch can hold ON.
If the supply voltage is below the undervoltage mechanism VS(UV), the device is OFF (turns OFF). As soon as the
supply voltage is above the undervoltage mechanism VS(OP), then the device can be switched ON. When the switch
is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until VS is in the VNOM
range. Figure 15 sketches the undervoltage mechanism.
Data Sheet
PROFET™+ 12V
21
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Protection Functions
VOUT
undervoltage behavio.rvsd
VS
VS(UV)
VS(OP)
Figure 15 Undervoltage Behavior
6.3
Overvoltage Protection
There is an integrated clamp mechanism for overvoltage protection (ZD(AZ)). To guarantee this mechanism
operates properly in the application, the current in the Zener diode has to be limited by a ground resistor. Figure 16
shows a typical application to withstand overvoltage issues. In case of supply voltage higher than VS(AZ), the power
transistor switches ON and the voltage across the logic section is clamped. As a result, the internal ground
potential rises to VS - VS(AZ). Due to the ESD Zener diodes, the potential at pin IN and DEN rises almost to that
potential, depending on the impedance of the connected circuitry. In the case the device was ON, prior to
overvoltage, the BTS5045-1EJA remains ON. In the case the BTS5045-1EJA was OFF, prior to overvoltage, the
power transistor can be activated. In the case the supply voltage is in above VBAT(SC) and below VDS(AZ), the output
transistor is still operational and follows the input. If the channel is in the ON state, parameters are no longer
guaranteed and lifetime is reduced compared to the nominal supply voltage range. This especially impacts the
short circuit robustness, as well as the maximum energy EAS capability. ZGND as a resistor (150 Ω) will offer
superior results compared to a diode and resistor (1 kΩ).
ISOV
ZIS(AZ)
VS
I N 1
ZD(AZ)
VBAT
ZDS(AZ)
IS
RSENSE
DEN
IN
RDEN
RIN
LOGIC
I N 0
OUT
ZDESD
GND
RIS
ZGND
Figure 16 Overvoltage Protection with External Components
Data Sheet
PROFET™+ 12V
22
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Protection Functions
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current in
this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logic pins
has to be limited to the maximum current described in Chapter 4.1 with an external resistor. Figure 17 shows a
typical application. RGND resistor is used to limit the current in the Zener protection of the device. Resistors RDEN
and RIN are used to limit the current in the logic of the device and in the ESD protection stage. RSENSE is used to
limit the current in the sense transistor which behaves as a diode. The recommended value for RDEN = RIN = RSENSE
= 4.7 kΩ. ZGND can be either a 150 Ω resistor or Schottky diode with 1 kΩ resistor in parallel.
In case the overvoltage is not considered in the application, RGND can be replaced by a Schottky diode and 1kΩ
resistor in parallel. Optionally a capacitor in parallel is recommended for EMC reasons.
During reverse polarity, no protection functions are available.
Micro controller
protection diodes
ZIS(AZ)
VS
ZD(AZ)
ZDS(AZ)
IS
RSENSE
VDS(REV)
DEN
IN
RDEN
RIN
LOGIC
-VS(REV)
I N 0
OUT
ZDESD
GND
ZGND
RIS
Reverse Polarity single.svg
Figure 17 Reverse Polarity Protection with External Components
6.5
Overload Protection
In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTS5045-1EJA offers
several protection mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the
maximum current allowed in the switch IL(SC). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS. The current limitation value is VDS dependent. Figure 18 shows the behavior of
the current limitation as a function of the drain to source voltage.
Data Sheet
PROFET™+ 12V
23
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Protection Functions
40
35
30
25
20
15
10
5
IL5(SC)
IL28(SC)
0
0
5
10
15
20
25
current limitation _45m.vsd
Drain source Voltage VDS (V)
Figure 18 Current Limitation (typical behavior)
6.5.2
Temperature Limitation in the Power DMOS
The channel incorporates both an absolute (TJ(SC)) and a dynamic (TJ(SW)) temperature sensor. Activation of either
sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch OFF latches
the output until the temperature has reached an acceptable value. Figure 19 gives a sketch of the situation. The
ΔTSTEP describes the device’s warming, due to the overcurrent in the channel.
A retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch is
switched ON again, if the IN pin signal is still high (restart behavior).
Data Sheet
PROFET™+ 12V
24
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Protection Functions
IN
t
IL
LOAD CURRENT BELOW
LIMITATION PHASE
LOAD CURRENT LIMITATION PHASE
IL(x)SC
IL(NOM)
t
TDMOS
ΔTJ(SW)
TJ(SC)
ΔTJ(SW)
ΔTJ(SW)
TA
tsIS(FAULT)
t
t
ΔTSTEP
tsIS(OT_blank)
IIS
IIS(FAULT)
IL(NOM) / kILIS
0A
tsIS(OFF )
VDEN
0V
t
Hard start.vsd
Figure 19 Overload Protection
Note:For better understanding, the time scale is not linear. The real timing of this drawing is application dependant
and cannot be described.
Data Sheet
PROFET™+ 12V
25
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Protection Functions
6.6
Electrical Characteristics for the Protection Functions
Table 6
Electrical Characteristics: Protection
VS = 8 V to 18 V, TJ = -40°C to +150°C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note /
Test Condition
Number
Min.
Max.
Loss of Ground
Output leakage current while IOUT(GND)
GND disconnected
–
0.1
–
mA
mV
1) 2) VS = 28 V
See Figure 14
P_6.6.1
P_6.6.2
Reverse Polarity
Drain source diode voltage
during reverse polarity
VDS(REV)
200
41
650
700
53
IL = - 2 A
TJ = 150 °C
See Figure 17
Overvoltage
Overvoltage protection
VS(AZ)
47
V
I
SOV = 5 mA
P_6.6.3
See Figure 16
Overload Condition
3)
Load current limitation
IL5(SC)
IL28(SC)
IL(RMS)
25
–
32
16
4
40
–
A
A
A
K
V
= 5 V
P_6.6.4
P_6.6.7
P_6.6.12
DS
See Figure 18 and
Figure 42
2) VDS = 28 V
See Figure 18 and
Load current limitation
Figure 43
2)
Short circuit current during
over temperature toggling
–
–
V = 4.5 V
SHORT = 100 mΩ
SHORT = 5 μH
IN
R
L
Dynamic temperature
ΔTJ(SW)
–
80
–
4) See Figure 19
P_6.6.8
increase while switching
Thermal shutdown
temperature
TJ(SC)
150
170 4) 200 4) °C
20
5) See Figure 19
P_6.6.10
Thermal shutdown hysteresis ΔTJ(SC)
–
–
K
5) 4) See Figure 19 P_6.6.11
1) All pins are disconnected except VS and OUT.
2) Not Subject to production test, specified by design
3) Test at TJ = -40°C only
4) Functional test only
5) Test at TJ = +150°C only
Data Sheet
PROFET™+ 12V
26
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
7
Diagnostic Functions
For diagnosis purpose, the BTS5045-1EJA provides a combination of digital and analog signals at pin IS. These
signals are called SENSE. In case the diagnostic is disabled via DEN, pin IS becomes high impedance. In case
DEN is activated, the SENSE of the channel is enabled.
7.1
IS Pin
The BTS5045-1EJA provides a SENSE current written IIS at pin IS. As long as no “hard” failure mode occurs (short
circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load at
OFF) a proportional signal to the load current (ratio kILIS = IL / IIS) is provided. The complete IS pin and diagnostic
mechanism is described on Figure 20. The accuracy of the SENSE depends on temperature and load current.
Vs
IIS
=
FAULT
IIS(FAULT)
IL / kILIS
ZIS(AZ)
1
0
1
IS
0
DEN
Sense schematic single.svg
Figure 20 Diagnostic Block Diagram
Data Sheet
PROFET™+ 12V
27
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
7.2
SENSE Signal in Different Operating Modes
Table 7 gives a quick reference for the state of the IS pin during device operation.
Table 7 Sense Signal, Function of Operation Mode
Operation Mode
Normal operation
Short circuit to GND
Overtemperature
Short circuit to VS
Open Load
Input level Channel X
DEN
Output Level Diagnostic Output
OFF
H
Z
Z
Z
Z
~ GND
Z
VS
IIS(FAULT)
< VOL(OFF)
> VOL(OFF)
Z
1)
IIS(FAULT)
Inverse current
~ VINV
~ VS
< VS
~ GND
Z
IIS(FAULT)
Normal operation
Current limitation
Short circuit to GND
ON
IIS = IL / kILIS
IIS(FAULT)
IIS(FAULT)
Overtemperature TJ(SW)
IIS(FAULT)
event
Short circuit to VS
Open Load
VS
IIS < IL / kILIS
IIS < IIS(OL)
2)
~ VS
3)
Inverse current
Underload
~ VINV
IIS < IIS(OL)
4)
~ VS
IIS(OL) < IIS < IL(nom) / kILIS
Don’t care
Don’t care
L
Don’t care
Z
1) Stable with additional pull-up resistor.
2) The output current has to be smaller than IL(OL)
.
3) After maximum tINV
.
4) The output current has to be higher than IL(OL)
.
Data Sheet
PROFET™+ 12V
28
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
7.3
SENSE Signal in the Nominal Current Range
Figure 21 and Figure 22 show the current sense as a function of the load current in the power DMOS. Usually, a
pull-down resistor RIS is connected to the IS pin. This resistor has to be higher than 560 Ω to limit the power losses
in the sense circuitry. A typical value is 1.2 kΩ. The blue curve represents the ideal SENSE, assuming an ideal
kILIS factor value. The red curves show the accuracy the device provides across full temperature range, at a
defined current.
4
3.5
3
2.5
2
1.5
1
0.5
min/max Sense Current
typical Sense Current
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
IL [A]
BTS5045-1EJA
Figure 21 Current Sense for Nominal Load
7.3.1
SENSE Signal Variation as a Function of Temperature and Load Current
In some applications a better accuracy is required around half the nominal current IL(NOM). To achieve this accuracy
requirement, a calibration on the application is possible. To avoid multiple calibration points at different load and
temperature conditions, the BTS5045-1EJA allows limited derating of the kILIS value, at a given point (IL3; TJ =
+25 °C). This derating is described by the parameter ΔkILIS. Figure 22 shows the behavior of the SENSE current,
assuming one calibration point at nominal load at +25 °C.
The blue line indicates the ideal kILIS ratio.
The green lines indicate the derating on the parameter across temperature and voltage, assuming one calibration
point at nominal temperature and nominal battery voltage.
The red lines indicate the kILIS accuracy without calibration.
Data Sheet
PROFET™+ 12V
29
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
calibrated kILIS
min/max kILIS
typical kILIS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
IL [A]
BTS5045-1EJA
Figure 22 Improved Current SENSE Accuracy with One Calibration Point at 1A
7.3.2
SENSE Signal Timing
Figure 23 shows the timing during settling and disabling of the SENSE.
VIN
t
IL
tON
90% of
IL static
t
t
VDEN
IIS
TsIS(LC)
tsIS(OFF)
TsIS(ON)
TsIS(ON)
90% of
IIS static
t
current sense settling disabling time single.vsd
Figure 23
SENSE Settling / Disabling Timing
Data Sheet
PROFET™+ 12V
30
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
7.3.3
SENSE Signal in Open Load
Open Load in ON Diagnostic
7.3.3.1
If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The
parameter IL(OL) gives the threshold of recognition for this leakage current. If the current IL flowing out the power
DMOS is below this value, the device recognizes a failure, if the DEN is selected. In that case, the SENSE current
is below IIS(OL). Otherwise, the minimum SENSE current is given above parameter IIS(OL). Figure 24 shows the
SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve shows the ideal
kILIS ratio.
IIS
IIS(OL)
IL
IL(OL)
Sense for OL .vsd
Figure 24 Current Sense Ratio for Low Currents
7.3.3.2
Open Load in OFF Diagnostic
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For the
calculation of pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) have to be
taken into account. Figure 25 gives a sketch of the situation. Ileakage defines the leakage current in the complete
system, including IL(OFF) (see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion, etc.... in the
application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel is
OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by
the device as an open load. The voltage threshold is given by VOL(OFF). In that case, the SENSE signal is switched
to the IIS(FAULT)
.
An additional RPD resistor can be used to pull VOUT to 0V. Otherwise, the OUT pin is floating. This resistor can be
used as well for short circuit to battery detection, see Chapter 7.3.4.
Data Sheet
PROFET™+ 12V
31
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
Vbat
SOL
VS
IIS(FAULT)
ROL
OL
comp.
OUT
IS
ILOFF
Ileakage
GND
RIS
ZGND
RPD
VOL(OFF)
Rleakage
Open Load in OFF.svg
Figure 25 Open Load Detection in OFF Electrical Equivalent Circuit
7.3.3.3
Open Load Diagnostic Timing
Figure 26 shows the timing during either Open load in ON or OFF condition. Please note that a delay tsIS(OT_BLANK)
has to be respected between the falling edge of the input and rising edge of the DEN, when applying an open load
in OFF diagnosis request, otherwise the voltage VOUT cannot be guaranteed and the diagnosis can be wrong.
Load is present
Open load
VIN
t
VOUT
VS-VOL(OFF)
shutdown with load
RDSON x IL
t
IOUT
VDEN
tsIS(OT_BLANK)
t
IIS
tsIS(FAULT_OL_OFF)
tsIS(LC)
90% of IIIS(FAULT) static
t
Error Settling Disabling Time.vsd
Figure 26 SENSE Signal in Open Load Timing
Data Sheet
PROFET™+ 12V
32
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
7.3.4
SENSE Signal with OUT in Short Circuit to VS
In case of a short circuit between the OUTput-pin and the VS pin, all or portion (depending on the short circuit
impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the
normal operation will flow through the DMOS of the BTS5045-1EJA, which can be recognized at the SENSE
signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to VS. In that case,
an external resistor to ground RSC_VS is required. Figure 27 gives a sketch of the situation.
Vbat
VS
IIS(FAULT)
VBAT
OL
comp.
IS
OUT
VOL(OFF)
GND
ZGND
RIS
RSC_VS
Short circuit to Vs.svg
Figure 27 Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit
7.3.5
SENSE Signal in Case of Overload
An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or the
absolute dynamic temperature swing TJ(SW) is reached, and / or the junction temperature reaches the thermal
shutdown temperature TJ(SC). Please refer to Chapter 6.5 for details.
In that case, the SENSE signal given is by IIS(FAULT) when the diagnostic is selected.
The device has a thermal restart behavior, such that when the overtemperature or the exceed dynamic
temperature condition has disappeared, the DMOS is reactivated if the IN is still at logical level one. If the DEN
pin is activated, the IS pin is not toggling with the restart mechanism and remains to IIS(FAULT)
.
7.3.6
SENSE Signal in Case of Inverse Current
In the case of inverse current, the channel will indicate open load in OFF state and indicate open load in ON state.
Data Sheet
PROFET™+ 12V
33
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
7.4
Electrical Characteristics Diagnostic Function
Table 8
Electrical Characteristics: Diagnostics
VS = 8 V to 18 V, TJ = -40°C to +150°C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note /
Test Condition
Number
Min.
Max.
Load Condition Threshold for Diagnostic
Open load detection
threshold in OFF state
VS - VOL(OFF)
IL(OL)
4
5
–
–
6
V
VIN = 0 V
VDEN = 4.5 V
P_7.5.1
P_7.5.2
Open load detection
threshold in ON state
30
mA VIN = VDEN = 4.5 V
IIS(OL) = 8 μA
See Figure 24
See Figure 45
Sense Pin
IS pin leakage current when IIS_(DIS)
sense is disabled
–
0
–
–
1
3
μA
VIN = 4.5 V
P_7.5.4
P_7.5.6
V
DEN = 0 V
IL = IL4 = 4 A
Sense signal saturation
voltage
VS - VIS
V
VIN = 0 V
V
V
OUT = VS > 10 V
DEN = 4.5 V
(RANGE)
IIS = 6 mA
See Figure 46
Sense signal maximum
current in fault condition
IIS(FAULT)
6
15
47
35
53
mA VIS = VIN = VDSEL = 0 V P_7.5.7
V
V
OUT = VS > 10 V
DEN = 4.5 V
See Figure 20
See Figure 47
Sense pin maximum voltage VIS(AZ)
41
V
IIS = 5 mA
P_7.5.3
See Figure 20
Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition
Current sense ratio
L0 = 50 mA
Current sense ratio
L1 = 0.5 A
Current sense ratio
L2 = 1 A
Current sense ratio
L3 = 2 A
Current sense ratio
kILIS0
kILIS1
kILIS2
kILIS3
kILIS4
-50%
-16%
-10%
-7%
1650
1460
1460
1460
+50%
+16%
+10%
+7%
VIN = 4.5 V
VDEN = 4.5 V
See Figure 21
P_7.5.8
I
P_7.5.9
TJ = -40 °C; 150 °C
I
P_7.5.10
P_7.5.11
P_7.5.12
P_7.5.17
I
I
-6.5% 1460
-5
+6.5%
+5
I
L4 = 4 A
kILIS derating with current and ΔkILIS
0
%
1) kILIS3 versus kILIS2
See Figure 22
temperature
Diagnostic Timing in Normal Condition
Data Sheet
PROFET™+ 12V
34
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Diagnostic Functions
Table 8
Electrical Characteristics: Diagnostics (cont’d)
VS = 8 V to 18 V, TJ = -40°C to +150°C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
–
Unit Note /
Test Condition
Number
Min.
Max.
Current sense settling time to tsIS(ON)
ILIS function stable after
0
250
μs
μs
μs
1)VDEN=VIN= 0 to 4.5 V P_7.5.18
VS = 13.5 V
RIS = 1.2 kΩ
k
positive input slope on both
INput and DEN
CSENSE < 100 pF
IL = IL3 = 2 A
See Figure 23
Current sense settling time
with load current stable and
transition of the DEN
tsIS(ON_DEN)
0
0
–
–
20
20
VIN = 4.5 V
P_7.5.19
P_7.5.20
V
DEN = 0 to 4.5 V
RIS = 1.2 kΩ
SENSE < 100 pF
C
IL = IL3 = 2 A
See Figure 23
Current sense settling time to tsIS(LC)
IIS stable after positive input
slope on current load
VIN = 4.5 V
V
DEN = 4.5 V
RIS = 1.2 kΩ
SENSE < 100 pF
C
IL = 1 A to IL = 2 A
See Figure 23
Diagnostic Timing in Open Load Condition
Current sense settling time to tsIS(FAULT_OL_
0
–
150
μs
VIN = 0V
P_7.5.22
IIS stable for open load
detection in OFF state
V
DEN = 0 to 4.5 V
RIS = 1.2 kΩ
SENSE < 100 pF
OUT = VS = 13.5 V
See Figure 26
OFF)
C
V
Diagnostic Timing in Overload Condition
Current sense settling time to tsIS(FAULT)
IIS stable for overload
detection
0
–
0
–
250
μs
μs
μs
VIN = VDEN = 0 to 4.5 V P_7.5.24
RIS = 1.2 kΩ
CSENSE < 100 pF
V
DS = 5 V
See Figure 19
1)
Current sense over
tsIS(OT_blank)
350
–
V = VDEN = 4.5 V
P_7.5.32
P_7.5.25
IN
temperature blanking time
RIS = 1.2 kΩ
C
V
SENSE < 100 pF
DS = 5 V to 0 V
See Figure 19
Diagnostic disable time
DEN transition to
tsIS(OFF)
–
30
VIN = 4.5 V
V
DEN = 4.5 V to 0 V
RIS = 1.2 kΩ
SENSE < 100 pF
IIS < 50% IL /kILIS
C
IL = IL3 = 2 A
See Figure 23
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 12V
35
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to voltage
thresholds. An implemented Schmidt trigger avoids any undefined state if the voltage on the input pin is slowly
increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state. The input
circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input circuitry. In case the
pin is not needed, it must be left opened, or must be connected to device ground (and not module ground) via an
input resistor.
IN
GND
Input circuitry.vsd
Figure 28 Input Pin Circuitry
8.2
DEN Pin
The DEN pin enables and disables the diagnostic functionality of the device. The pin has the same structure as
the INput pin, please refer to Figure 28.
8.3
Input Pin Voltage
The IN and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set
by the thresholds VIN(L) Max. and VIN(H) Min. The exact value where the ON and OFF take place are unknown and
depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a
hysteresis is implemented. This ensures a certain immunity to noise.
Data Sheet
PROFET™+ 12V
36
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Input Pins
8.4
Electrical Characteristics
Table 9
Electrical Characteristics: Input Pins
VS = 8 V to 18 V, TJ = -40°C to +150°C (unless otherwise specified).
Typical values are given at VS = 13.5 V, TJ = 25 °C
Parameter
Symbol
Values
Typ.
Unit Note /
Test Condition
Number
Min.
Max.
INput Pins Characteristics
Low level input voltage range VIN(L)
High level input voltage range VIN(H)
-0.3
2
–
0.8
6
V
See Figure 48
See Figure 49
1) See Figure 50 P_8.4.3
P_8.4.1
P_8.4.2
–
V
Input voltage hysteresis
Low level input current
High level input current
VIN(HYS)
IIN(L)
IIN(H)
–
250
10
10
–
mV
μA
μA
1
25
25
VIN = 0.8 V
P_8.4.4
P_8.4.5
2
VIN = 5.5 V
See Figure 51
DEN Pin
Low level input voltage range VDEN(L)
High level input voltage range VDEN(H)
-0.3
2
–
0.8
6
V
–
P_8.4.6
P_8.4.7
P_8.4.8
P_8.4.9
P_8.4.10
–
V
–
1)
Input voltage hysteresis
Low level input current
High level input current
VDEN(HYS)
IDEN(L)
–
250
10
10
–
mV
μA
μA
1
25
25
V
DEN = 0.8 V
DEN = 5.5 V
IDEN(H)
2
V
1) Not subject to production test, specified by design
Data Sheet
PROFET™+ 12V
37
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9
Characterization Results
The characterization have been performed on 3 lots, with 3 devices each. Characterization have been performed
at 8 V, 13.5 V and 18 V over temperature range. When no dependency to voltage is seen, only one curve (13,5V)
is sketched.
9.1
General Product Characteristics
9.1.1
Minimum Functional Supply Voltage
P_4.2.3
5
4,6
4,2
3,8
-40
0
40
80
120
160
Junction Temp (°C) minimum functional supply.vsd
Figure 29 Minimum Functional Supply Voltage VS(OP)_MIN = f(TJ)
9.1.2
Undervoltage Shutdown
P_4.2.4
4
3,75
3,5
3,25
3
-40
0
40
80
120
160
Junction Temp (°C)
Undervoltage_shutdown.vsd
Figure 30 Undervoltage Threshold VS(UV) =f(TJ)
Data Sheet
PROFET™+ 12V
38
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.1.3
Current Consumption Channel active
P_4.2.5
6
I_GND1 @ 8V
I_GND1 @ 13.5V
I_GND1 @ 18V
3
0
-40
0
40
80
120
160
Junction Temp (°C)
Current consumption one channel active.vsd
Figure 31 Current Consumption for Whole Device with Load, Channel Active IGND_1 = f(TJ;VS)
9.1.4
Standby Current for Whole Device with Load
P_4.2.7, P_4.2.10
6.00
3.00
0.00
IS(OFF) @ 18V
IS(OFF) @ 13.5V
IS(OFF) @ 8V
-40
0
40
80
120
160
Junction Temp (°C)
Figure 32 Standby Current for Whole Device with Load. IS(OFF) = f(TJ;VS)
9.2
Power Stage
9.2.1
Output Voltage Drop Limitation at Low Load Current
P_5.5.4
Data Sheet
PROFET™+ 12V
39
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
13
11
9
7
-40
0
40
80
120
160
Junction Temp (°C)
Output Voltage drop limitation at low load current.vsd
Figure 33 Output Voltage Drop Limitation at Low Load Current VDS(NL) = f(TJ;VS)
9.2.2
Drain to Source Clamp Voltage
P_5.5.5
52
48
44
40
-40
0
40
80
120
160
Junction Temp (°C)
Drain to source clamp voltage.vsd
Figure 34 Drain to Source Clamp Voltage VDS(AZ) = f(TJ)
Data Sheet
PROFET™+ 12V
40
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.2.3
Slew Rate at Turn ON
P_5.5.11
0,5
dV/dt_ON @ 8V
dV/dt_ON @ 13.5V
dV/dt_ON @ 18V
0,3
0,1
-40
0
40
80
120
160
Junction Temp (°C)
dV_dt_ON.vsd
Figure 35 Slew Rate at Turn ON dV/dtON = f(TJ;VS), RL = 4 Ω
9.2.4
Slew Rate at Turn OFF
P_5.5.12
0,5
dV/dt_OFF @ 8V
dV/dt_OFF @ 13.5V
dV/dt_OFF @ 18V
0,3
0,1
-40
0
40
80
120
160
Junction Temp (°C)
dV_dt_OFF.vsd
Figure 36 Slew Rate at Turn OFF - dV/dtOFF = f(TJ;VS), RL = 4 Ω
9.2.5
Turn ON
P_5.5.14
230
130
30
tON 90%@18V
tON 90%@13,5V
tON 90%@8V
-40
0
40
80
120
160
Junction Temp (°C)
tON_90.vsd
Figure 37 Turn ON tON = f(TJ;VS), RL = 4 Ω
Data Sheet
PROFET™+ 12V
41
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.2.6
Turn OFF
P_5.5.11
230
130
30
tOFF 10%@18V
tOFF 10%@13,5V
tOFF 10%@8V
-40
0
40
80
120
160
tOFF_90.vsd
Junction Temp (°C)
Figure 38 Turn OFF tOFF = f(TJ;VS), RL = 4 Ω
9.2.7
Turn ON / OFF matching
P_5.5.16
50
25
0
delta_t_SW @ 8V
delta_t_SW @ 13.5V
delta_t_SW @ 18V
-25
-50
-40
0
40
80
120
160
Junction Temp (°C)
delta_t_SW_OFF_ON.vsd
Figure 39 Turn ON / OFF matching ΔtSW = f(TJ;VS), RL = 4 Ω
Data Sheet
PROFET™+ 12V
42
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.2.8
Switch ON Energy
P_5.5.19
1000
750
500
250
Switch ON energy @ 18V
Switch ON energy @ 13,5V
Switch ON energy @ 8V
0
-40
0
40
80
120
160
Junction Temp (°C)
Figure 40 Switch ON Energy EON = f(TJ;VS), RL = 4 Ω
9.2.9
Switch OFF Energy
P_5.5.20
1000
750
500
250
Switch ON energy @ 18V
Switch ON energy @ 13,5V
Switch ON energy @ 8V
0
-40
0
40
80
120
160
Junction Temp (°C)
Figure 41 Switch OFF Energy EOFF = f(TJ;VS), RL = 4 Ω
Data Sheet
PROFET™+ 12V
43
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.3
Protection Functions
9.3.1
Overload Condition in the Low Voltage Area
P_6.6.4
Figure 42 Overload Condition in the Low Voltage Area IL5(SC) = f(TJ;VS)
9.3.2
Overload Condition in the High Voltage Area
P_6.6.7
Figure 43 Overload Condition in the High Voltage Area IL28(SC) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
44
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.4
Diagnostic Mechanism
9.4.1
Current Sense at no Load
2,5
2
1,5
1
0,5
0
-40
0
40
80
120
160
Junction Temp (°C)
Current_sense_0mA.vsd
Figure 44 Current Sense at no Load IIS = f(TJ;VS); IL = 0
9.4.2
Open Load Detection Threshold in ON State
P_7.5.2
Figure 45 Open Load Detection ON State Threshold IL(OL) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
45
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.4.3
Sense Signal Maximum Voltage
P_7.5.3
3
VIS_RANGE @ 8V
VIS_RANGE @ 13.5V
VIS_RANGE @ 18V
2
1
-40
0
40
80
120
160
Junction Temp (°C)
Figure 46 Sense Signal Maximum Voltage VS - VIS(RANGE) = f(TJ;VS)
9.4.4
Sense Signal maximum Current
P_7.5.7
IIS_FAULT @ 8V
IIS_FAULT @ 13.5V
IIS_FAULT @ 18V
36
26
16
6
-40
0
40
80
120
160
Junction Temp (°C)
IIS_FAULT.vsd
Figure 47 Sense Signal Maximum Current in Fault Condition IIS(FAULT) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
46
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.5
Input Pins
9.5.1
Input Voltage Threshold ON to OFF
P_8.4.1
2
1,5
1
I_IN(L) @ 8V
I_IN(L) @ 13.5V
I_IN(L) @ 18V
0,5
0
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_low_voltage.vsd
Figure 48 Input Voltage Threshold VIN(L) = f(TJ;VS)
9.5.2
Input Voltage Threshold OFF to ON
P_8.4.2
2
1,5
1
0,5
0
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_high_voltage.vsd
Figure 49 Input Voltage Threshold VIN(H) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
47
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Characterization Results
9.5.3
Input Voltage Hysteresis
P_8.4.3
400
300
200
100
0
V_IN(HYS) @ 8V
V_IN(HYS) 13.5V
V_IN(HYS) @ 18V
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_voltage_hysteresis.vsd
Figure 50 Input Voltage Hysteresis VIN(HYS) = f(TJ;VS)
9.5.4
Input Current High Level
P_8.4.5
25
20
15
10
5
0
-40
0
40
80
120
160
Junction Temp (°C)
Input_pin_high_current.vsd
Figure 51 Input Current High Level IIN(H) = f(TJ;VS)
Data Sheet
PROFET™+ 12V
48
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Application Information
10
Application Information
Note:The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
R/L cable
T1
Z2
VDD
CVS
ROL
Vdd
Vs
R/L cable
RIN
OUT
OUT
IN0
OUT0
COUT0
RPD
RDEN
DEN
Micro controller
A/D
RA/D
RSENSE
IS
GND
CSENSE
D
Z1
RIS
RGND
Vss
Figure 52 Application Diagram with BTS5045-1EJA
Note:This is a very simplified example of an application circuit. The function must be verified in the real application.
Table 10
Bill of Material
Reference Value
Purpose
RIN
4.7 kΩ
4.7 kΩ
47 kΩ
Protection of the micro controller during overvoltage, reverse polarity
Guarantee BTS5045-1EJA channel OFF during loss of ground
RDEN
RPD
Protection of the micro controller during overvoltage, reverse polarity
Guarantee BTS5045-1EJA channel OFF during loss of ground
Polarization of the output
Improve BTS5045-1EJA immunity to electromagnetic noise
RIS
1.2 kΩ
4.7 kΩ
Sense resistor
RSENSE
Overvoltage, reverse polarity, loss of ground. Value to be tuned with micro
controller specification.
ROL
1.5 kΩ
4.7 kΩ
Ensure polarization of the BTS5045-1EJA output during open load in OFF
diagnostic
RA/D
Protection of the micro controller during overvoltage, reverse polarity
Data Sheet
PROFET™+ 12V
49
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Application Information
Table 10
Bill of Material (cont’d)
Reference Value
Purpose
D
BAS21
Protection of the BTS5045-1EJA during reverse polarity
RGND
Z1
1 kΩ
To keep the device GND at a stable potential during clamping
7 V Zener diode Protection of the micro controller during overvoltage
Z2
36 V Zener
diode
Protection of the device during overvoltage
T1
BC 807
100 pF
100 nF
4.7 nF
Switch the battery voltage for open load in OFF diagnostic
Sense signal filtering
CSENSE
CVS
Filtering of the voltage spikes on the battery line
Protection of the BTS5045-1EJA during ESD and BCI
COUT0
10.1
Further Application Information
•
•
•
Please contact us to get the pin FMEA
Existing App. Notes
For further information you may visit http://www.infineon.com/profet
Data Sheet
PROFET™+ 12V
50
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Package Outlines
11
Package Outlines
0.35 x 45˚
1)
0.1
3.9
0.1 C D 2x
+0.06
9
0.1
0.08
Seating Plane
C
C
0.64
0.25
M
1.27
2)
0.09
0.2
0.2
D 8x
0.41
6
M
0.2
C A-B D 8x
D
Bottom View
0.2
3
A
1
4
8
5
1
4
8
5
B
0.1 C A-B 2x
1)
0.1
4.9
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Dambar protrusion shall be maximum 0.1 mm total in excess of lead width
3) JEDEC reference MS-012 variation BA
PG-DSO-8-27-PO V01
Figure 53 PG-DSO-8-43 EP (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
PROFET™+ 12V
51
Rev. 2.2, 2013-09-06
BTS5045-1EJA
Revision History
12
Revision History
Version Date
Parameter Changes
Creation of the Data Sheet
Updated Figure 6) Typical Thermal Impedance
2.0
2.1
2010-05-31
2011-06-20
Updated Figure 12) Maximum Energy Dissipation Single Pulse
Changed the Maximum Energy Dissipation Single Pulse
adapted the footnote; updated the Legal Disclaimer
added the parameter IL(INV)
P_4.1.23
P_4.1.4
P_5.5.9
Updated characterisation results; Graphs in chapter 9.3
2.2
2013-07-31
changed kilis specification parameters and figures 21/22 accordingly
changed from 34% to 16%, typical value changed from 1500 to 1460
changed from 13% to 10%, typical value changed from 1500 to 1460
changed from 9% to 7%, typical value changed from 1500 to 1460
changed from 8% to 6.5%, typical value changed from 1500 to 1460
changed from 8% to 5%
P_7.5.9
P_7.5.10
P_7.5.11
P_7.5.12
P_7.5.17
Updated Fig 4) PCB 2s2p Cross Section
device marking corrected to 5045-EJA
Data Sheet
PROFET™+ 12V
52
Rev. 2.2, 2013-09-06
Edition 2013-09-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Legal Disclaimer for short-circuit capability
Infineon disclaims any warranties and liabilities, whether expressed nor implied, for any short-circuit failures below
the threshold limit.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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