BTS650PNKSA1 [INFINEON]
Buffer/Inverter Based Peripheral Driver, 130A, MOS, PZFM7, TO-220, 7 PIN;
| 型号： | BTS650PNKSA1 |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 130A, MOS, PZFM7, TO-220, 7 PIN 局域网 驱动 接口集成电路 |
| 文件： | 总16页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet BTS650P
Smart Highside High Current Power Switch
Reversave
Features
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
•
•
•
•
•
•
•
•
•
•
•
•
•
Overload protection
Vbb(AZ)
VON(CL)
62
V
V
V
Current limitation
Short circuit protection
Over temperature protection
Over voltage protection (including load dump)
Clamp of negative voltage at output
42
5.0...34
V
bb(on)
R
ON
6.0
70
mΩ
A
I
1
L(ISO)
)
Fast deenergizing of inductive loads
Low ohmic inverse current operation
Short circuit current limitation I
Current sense ratio
130
A
L(SC)
Reversave (Reverse battery protection)
Diagnostic feedback with load current sense
Open load detection via current sense
I : I
L
14 000
IS
Loss of V protection 2
)
TO-220-7
bb
Electrostatic discharge (ESD) protection
Application
•
Power switch with current sense diagnostic
feedback for 12V and 24V DC grounded loads
Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
•
7
7
1
1
SMD
Standard
•
Replaces electromechanical relays, fuses and
discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
+ V
bb
R
bb
Voltage
source
Current
limit
Gate
protection
Overvoltage
protection
1,2,6,7
OUT
Limit for
Voltage
sensor
Charge pump
Level shifter
Rectifier
unclamped
ind. loads
I
L
Current
Sense
Output
Voltage
detection
3
Load
IN
Logic
ESD
I
IN
Temperature
sensor
I
IS
PROFET
IS
Load GND
5
V
IN
R
V
IS
IS
Logic GND
1
2
)
)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 16
2003-Oct-01
Data Sheet BTS650P
Pin
Symbol
Function
Output; output to the load; pin1, 2, 6 and 7 must be externally shorted with
1
2
OUT
O
O
each other especially in high current applications. 3
)
OUT
IN
Output; output to the load; pin1, 2, 6 and 7 must be externally shorted with
3)
each other especially in high current applications.
3
4
I
Input; has an internal pull up; activates the power switch in case of short to
ground
Supply voltage; positive power supply voltage; tab and pin 4 are internally
V
bb
+
S
shorted; in high current applications use the tab 4
)
.
Sense Output; Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
5
6
7
IS
Output; output to the load; pin1, 2, 6 and 7 must be externally shorted with
OUT
OUT
O
O
3)
each other especially in high current applications.
Output; output to the load; pin1, 2, 6 and 7 must be externally shorted with
3)
each other especially in high current applications.
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
V
Supply voltage (over voltage protection see page 4)
Vbb
Vbb
42
34
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (see diagram on page 10)
V
Load current (short circuit current, see page 5)
IL
self-limited
75
A
V
Load dump protection VLoadDump =VA +Vs, VA =13.5V
5
6
)
)
RI =2Ω, RL =0.54Ω, td =200ms,
VLoad dump
IN, IS= open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
°C
W
170
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const.,
IL = 20 A, ZL = 7.5mH, 0Ω, see diagrams on page 10
1.5
4
J
EAS
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
VESD
kV
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 8 and 9
IIN
IIS
+15, -250
+15, -250
mA
3
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the
4
)
tab.
5
6
)
)
R = internal resistance of the load dump test pulse generator.
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2003-Oct-01
Data Sheet BTS650P
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
--
typ
max
7
)
RthJC
chip - case:
K/W
-- 0.75
60
Thermal resistance
--
junction - ambient (free air): RthJA
SMD version, device on PCB :
--
--
8
)
33
40
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj =-40 ... +150°C, V = 12 V unless otherwise specified
bb
min
--
typ
max
6.0
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL =20A, T =25°C:
j
RON
4.4
mΩ
VIN =0, IL =20A, T =150°C:
j
7.9 10.5
-- 10.7
IL =90A, T =150°C:
j
9
)
Vbb =6V , IL =20A, T =150°C: RON(Static)
--
10
70
17
--
j
Nominal load current 10 (Tab to pins 1, 2, 6, 7)
IL(ISO)
55
A
A
)
ISO 10483-1/6.7: VON =0.5V, T =85°C 11
)
c
Nominal load current 10), device on PCB 8)
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
IL(NOM)
13.6
17
--
Maximum load current in resistive range
(Tab to pins 1, 2, 6, 7)
VON =1.8V, T =25°C: IL(Max)
250
150
--
--
--
--
c
A
see diagram on page 13
VON =1.8V, T =150°C:
c
Turn-on time12
I
I
to 90% VOUT: ton
to 10% VOUT: toff
100
30
--
--
420
110
µs
)
IN
IN
Turn-off time
RL =1Ω , Tj =-40...+150°C
Slew rate on12) (10 to 30% VOUT
RL =1Ω , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT
RL =1Ω , TJ = 25 °C
)
)
dV/dton
-dV/dtoff
--
--
0.7
1.1
-- V/µs
-- V/µs
7
)
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
8
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
)
)
bb
connection. PCB is vertical without blown air.
9
Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
not subject to production test, specified by design
TJ is about 105°C under these conditions.
See timing diagram on page 14.
10
11
12
)
)
)
Infineon Technologies AG
Page 3
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
Symbol
Values
Unit
at Tj =-40 ... +150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Inverse Load Current Operation
On-state resistance (Pins 1, 2, 6, 7 to pin 4)
VbIN =12 V, IL =-20A
T =25°C:
--
55
--
4.4
7.9 10.5
6.0
RON(inv)
mΩ
A
j
see diagram on page 10
T =150°C:
j
Nominal inverse load current (Pins 1, 2, 6, 7 to Tab)
IL(inv)
70
--
VON =-0.5V, T =85°C11
c
Drain-source diode voltage (V > V
)
-VON
0.6
--
V
out
bb
I
-
I = 0,
L = 20A, Tj =+150°C
IN
Operating Parameters
Operating voltage (VIN =0V) 13
Vbb(on)
VbIN(u)
5.0
1.5
--
34
V
V
)
Under voltage shutdown 14
3.0
4.5
)
Under voltage start of charge pump
see diagram page 15
VbIN(ucp)
3.0
60
62
4.5
--
66
6.0
--
--
V
V
Over voltage protection 15
Tj =-40°C: VZ,IN
Tj =25...+150°C:
)
Ibb =15mA
Standby current
IIN =0
Tj =-40...+25°C: Ibb(off)
Tj =150°C:
--
--
15
25
25
50
µA
13
)
If the device is turned on before a V -decrease, the operating voltage range is extended down to V
.
bIN(u)
bb
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14
)
V
bIN
= V - V see diagram on page 7. When V
increases from less than VbIN(u) up to V
= 5V
bb
IN
bIN
bIN(ucp)
(typ.) the charge pump is not active and V
≈V -3V.
OUT
bb
15
)
See also V
in circuit diagram on page 9.
ON(CL)
Infineon Technologies AG
Page 4
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
Symbol
Values
Unit
at Tj =-40 ... +150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Protection Functions 16
)
Short circuit current limit (Tab to pins 1, 2, 6, 7)
V
ON
=12 V, time until shutdown max. 350 µs T =-40°C: I
--
110
--
A
c
L(SC)
--
65
130 180
Tc =25°C: IL(SC)
Tc =+150°C: IL(SC)
115
--
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
td(SC)
80
--
350
20
µs
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 17
IL= 40 mA: -VOUT(CL)
14 16.5
V
)
(inductive load switch off)
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
VON(CL)
39
42
47
V
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
VON(SC)
Tjt
--
150
--
6
--
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
∆Tjt
10
Reverse Battery
Reverse battery voltage 18
)
-Vbb
--
--
--
16
V
On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) T =25°C:
j
RON(rev)
5.4
8.9 12.3
7.0
mΩ
Vbb=-12V, VIN=0, IL=-20A, RIS=1kΩ T =150°C:
j
Integrated resistor in V line
Rbb
--
120
--
Ω
bb
16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17
)
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
18
)
it is done with all polarity symmetric loads). Note that under off-conditions (I =I =0) the power transistor
IN IS
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
Page 5
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
Symbol
Values
Unit
at Tj =-40 ... +150°C, V = 12 V unless otherwise specified
bb
min
typ
max
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS =IL :IIS,
IL =90A,Tj =-40°C:
Tj =25°C:
12 500 14 200 16 000
12 500 13 700 16 000
11 500 13 000 14 500
12 500 14 500 17 500
12 000 14 000 16 500
11 500 13 400 15 000
12 500 15 000 19 000
11 500 14 300 17 500
11 500 13 500 15 500
11 000 18 000 28 500
11 000 15 400 22 000
11 200 14 000 19 000
kILIS
Tj =150°C:
19
)
VON <1.5V ,
IL =20A,Tj =-40°C:
Tj =25°C:
VIS <VOUT - 5V,
VbIN >4.0V
see diagram on page 12
Tj =150°C:
IL =10A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL =4A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation
IIS,lim
6.5
--
--
--
2
--
0.5
65
mA
Current sense leakage current
IIN =0: IIS(LL)
µA
IIS(LH)
--
VIN =0, IL ≤0:
Current sense over voltage protection Tj =-40°C: VZ,IS
60
62
--
--
66
--
--
--
V
Ibb =15mA
Tj =25...+150°C:
20
)
Current sense settling time
ts(IS)
500
µs
Input
Input and operating current (see diagram page 13) IIN(on)
--
--
0.8
--
1.5
80
mA
IN grounded (V =0)
IN
Input current for turn-off 21
IIN(off)
µA
)
19
)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim
.
20
21
)
)
not subject to production test, specified by design
We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (I =0) the voltage between IN and GND
IN
reaches almost V
.
bb
Infineon Technologies AG
Page 6
2003-Oct-01
Data Sheet BTS650P
Truth Table
Input
current
Output
level
Current
Sense
Remark
level
I
IS
Normal
L
H
L
H
0
=IL / kilis, up to IIS=IIS,lim
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over
temperature
Short circuit to
nominal
up to VON=VON(Fold back)
IS no longer proportional to IL
VON > VON(Fold back)
H
H
H
H
IIS, lim
0
I
if VON>VON(SC), shutdown will occur
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
0
0
0
0
0
<nominal 22
)
V
bb
Z23
H
L
0
0
0
)
Open load
Negative output
voltage clamp
Inverse load
current
L
H
H
H
0
0
L = "Low" Level; H = "High" Level
Over temperature reset by cooling: T < T (see diagram on page 15)
j
jt
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
RON measurement layout
I
bb
4
V
l ≤
bIN
V
V
ON
bb
5.5mm
I
L
IN
OUT
V
3
bb
1,2,6,7
PROFET
R
IN
IS
5
V
force
bb
I
Sense
contacts
V
Out Force
contacts
(both out
IS
S
IN
V
OUT
V
bIS
I
IN
D
pins parallel)
R
V
IS
IS
Typical R
for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
ON
Two or more devices can easily be connected in
parallel to increase load current capability.
22
23
)
)
Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
Power Transistor "OFF", potential defined by external impedance.
Infineon Technologies AG
Page 7
2003-Oct-01
Data Sheet BTS650P
Current sense status output
Input circuit (ESD protection)
V
bb
V
bb
R
bb
V
Z,IS
ZD
R
bb
ZD
V
Z,IN
IS
V
bIN
I
IN
IS
V
IS
R
I
IN
IS
V
Z,IS
=66V (typ.), R =1 kΩ nominal (or 1 kΩ /n, if n
IS
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS
V
IN
>
5 V. If you want measure load currents up to IL(M), RIS
Vbb - 5 V
When the device is switched off (I =0) the voltage
IN
should be less than
.
between IN and GND reaches almost V . Use a
bb
IL(M) / Kilis
Note: For large values of R the voltage V can reach
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
IS
IS
almost V . See also over voltage protection.
bb
If you don't use the current sense output in your
application, you can leave it open.
V
Z,IN
=66V (typ).
Short circuit detection
Fault Condition: VON > VON(SC) (6V typ.) and t> td(SC)
(80 ...350 µs).
Inductive and over voltage output clamp
+ Vbb
VZ1
+ V
bb
VON
V
ON
VZG
OUT
OUT
PROFET
Short circuit
detection
Logic
unit
IS
VOUT
DS
V
ON
is clamped to V
=42V typ. At inductive load
ON(Cl)
switch-off without DS, VOUT is clamped to VOUT(CL)
-19V typ. via VZG. With DS, VOUT is clamped to Vbb
ON(CL) via VZ1. Using DS gives faster deenergizing of
=
-
V
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Infineon Technologies AG
Page 8
2003-Oct-01
Data Sheet BTS650P
Over voltage protection of logic part
V
disconnect with energized inductive
bb
load
+ V
bb
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (V <72 V or
R
V
V
bb
Z,IN
ZL
Z,IS
V
<30 V if RIN=0). For higher clamp voltages
Zb
R
IN
currents at IN and IS have to be limited to 250 mA.
IN
Logic
Version a:
V
OUT
PROFET
IS
IS
V
bb
V
bb
V
R
Z,VIS
R
V
OUT
IN
PROFET
Signal GND
R
=120Ω typ., V
= V
=66V typ., R =1kΩ
bb
Z,IN
Z,IS IS
IS
nominal. Note that when over voltage exceeds 71V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
V
ZL
Reverse battery protection
Version b:
V
-
bb
Rbb
V
bb
V
bb
IN
OUT
OUT
IN
PROFET
Power
Transistor
RIN
Logic
IS
IS
DS
RL
V
Zb
RV
RIS
D
Signal GND
Power GND
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
R ≥1kΩ, R =1kΩ nominal. Add R for reverse
IS
IN
V
Version c: Sometimes a necessary voltage clamp is
given by non inductive loads RL connected to the same
switch and eliminates the need of clamping circuit:
battery protection in applications with V above
bb
18)
16 V ; recommended value:
1
1
1
0.1A
RIN RIS RV |Vbb| - 12V
0.1A
RIN |Vbb| - 12V
+
+
=
if DS is not used (or
1
=
if DS is used).
V
V
bb
bb
R
L
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
OUT
IN
PROFET
IS
proper adjusting the current through R and R .
IS
V
Infineon Technologies AG
Page 9
2003-Oct-01
Data Sheet BTS650P
Inverse load current operation
Maximum allowable load inductance for
a single switch off
L = f (I ); T
= 150°C, V = 12 V, R = 0 Ω
L
j,start
bb
L
V
bb
V
L [µH]
bb
- I
L
OUT
IN
+
-
PROFET
1000000
IS
V
+
-
OUT
100000
10000
1000
100
I
IS
V
IN
V
R
IS
IS
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
10
Note: Temperature protection during inverse load
current operation is not possible!
1
10 A
100 A
1000 A
[A]
Inductive load switch-off energy
dissipation
I
L
E
bb
E
Externally adjustable current limit
AS
E
E
Load
L
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
V
bb
i (t)
L
V
bb
OUT
PROFET
IN
L
IS
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
{
Z
L
I
E
R
R
IN
R
L
IS
V
bb
Energy stored in load inductance:
V
bb
2
L
1
E = / ·L·I
L
2
IN
OUT
IS
PROFET
While demagnetizing load inductance, the energy
dissipated in PROFET is
R
V
E = Ebb + EL - ER= VON(CL)·i (t) dt,
AS
L
R
load
IN
with an approximate solution for R > 0Ω:
T1
Signal
C
L
Signal
V
T2
R
IS
I ·L
L
I ·R
L L
OUT(CL)
Power
GND
GND
E =
AS
(V +|V
|) ln (1+
OUT(CL)
)
bb
2·R
|V
|
L
Infineon Technologies AG
Page 10
2003-Oct-01
Data Sheet BTS650P
Options Overview
Type
BTS 6510 550P 555
650P
Over temperature protection with hysteresis
X
X
X
X
T >150 °C, latch function24
)
j
X
X
T >150 °C, with auto-restart on cooling
j
Short circuit to GND protection
with over temperature shutdown
X
-
X
-
X
-
switches off when V >6 V typ.
ON
(when first turned on after approx. 180 µs)
Over voltage shutdown
Output negative voltage transient limit
to V - V
X
X
X
bb ON(CL)
to V
= -19 V typ
X
X25
X
25)
)
25)
OUT
24
)
Latch except when V -V
< V
after shutdown. In most cases V
= 0 V after shutdown (V
OUT
≠
bb
OUT
ON(SC)
OUT
0 V only if forced externally). So the device remains latched unless V < V
(see page 5). No latch
bb
ON(SC)
between turn on and t
.
d(SC)
25
)
Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Infineon Technologies AG
Page 11
2003-Oct-01
Data Sheet BTS650P
Characteristics
Current sense versus load current:
Current sense ratio:
IIS = f(IL), T = 25 °C
J
I
IS = f(IL), T = -40 ... +150 °C
J
22000
20000
18000
16000
14000
12000
10000
7
6
5
max
max
typ
4
3
2
1
0
min
min
0
20
40
60
80
0
20
40
60
80
kILIS
IIS [mA]
IL [A]
IL [A]
Current sense ratio:
Current sense ratio:
KILIS = f(IL),TJ = 150°C
KILIS = f(IL),TJ = -40°C
k
ilis
22000
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000
10000
20000
18000
16000
14000
12000
10000
max
max
typ
typ
min
min
0
20
40
60
80
0
20
40
60
80
k
ilis
IL [A]
IL [A]
Infineon Technologies AG
Page 12
2003-Oct-01
Data Sheet BTS650P
Typ. current limitation characteristic
Typ. input current
I = f (V , T )
I
= f (VbIN), VbIN = Vbb - VIN
ON
L
j
IN
I
IN
[mA]
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
I
L
[A]
450
400
350
300
250
200
150
100
50
VON > VON(SC) only for t < td(SC)
(otherwise immediate shutdown)
TJ = 25°C
TJ = 150°C
TJ = - 40°C
0
VON(FB)
0
5
10
15
20
[V]
0
20
40
60
80
[V]
V
ON
V
bIN
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
Typ. on-state resistance
R
ON
= f (V , T ); I = 20 A; V = 0
bb
j
L
IN
R
[mOhm]
ON
14
12
10
8
static
dynamic
Tj = 150°C
85°C
6
25°C
4
-40°C
2
0
40
0
5
10
15
V
bb
[V]
Infineon Technologies AG
Page 13
2003-Oct-01
Data Sheet BTS650P
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
Figure 2c: Switching an inductive load:
IIN
IIN
VOUT
dV/dtoff
90%
VOUT
t
on
dV/dton
10%
t
off
t
t
IL
slc(IS)
slc(IS)
IL
Load 1
Load 2
t
IIS
IIS
t
t
son(IS)
t
soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 3d: Short circuit:
shut down by short circuit detection, reset by I =0.
IN
Figure 2b: Switching motors and lamps:
IIN
IIN
IL
IL(SCp)
VOUT
td(SC)
IIL
I
IS
VOUT>>0
VOUT=0
t
IIS
t
Shut down remains latched until next reset via input.
Sense current saturation can occur at very high
inrush currents (see I
on page 6).
IS,lim
Infineon Technologies AG
Page 14
2003-Oct-01
Data Sheet BTS650P
Figure 4e: Over temperature
Reset if T <T
j
jt
IIN
IIS
Auto Restart
VOUT
Tj
t
Figure 6f: Under voltage restart of charge pump,
over voltage clamp
VOUT
V = 0
IN
V
ON(CL)
dynamic, short
Undervoltage
not below
6
V
bIN(u)
4
I = 0
2
0
IN
V
ON(CL)
V
V
bIN(ucp)
0
bIN(u)
Infineon Technologies AG
Page 15
2003-Oct-01
Data Sheet BTS650P
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Package and Ordering Code
All dimensions in mm
Standard: TO-220-7-3
Ordering code
Attention please!
BTS650P
Q67060-S6308-A002
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
SMD: TO220-7-180
BTS650P E3180A T&R: Q67060-S6308-A004
Ordering code
Infineon Technologies Components may only be used in life-
support devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
Footprint:
10.8
9.4
4.6
16.15
0.47
0.8
8.42
Infineon Technologies AG
Page 16
2003-Oct-01
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