BTS716GXUMA1 [INFINEON]

Buffer/Inverter Based Peripheral Driver, 5.3A, PDSO20, GREEN, PLASTIC, SOP-20;
BTS716GXUMA1
型号: BTS716GXUMA1
厂家: Infineon    Infineon
描述:

Buffer/Inverter Based Peripheral Driver, 5.3A, PDSO20, GREEN, PLASTIC, SOP-20

驱动 光电二极管 接口集成电路
文件: 总16页 (文件大小:285K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Smart High-Side Power Switch  
BTS716G  
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢀꢇꢋꢌꢅꢍꢎꢏꢌꢃꢅꢀꢏꢇꢄꢐꢉꢅ  
ꢑꢎꢒꢃꢅꢓꢉꢂꢔꢔꢌꢕꢖꢗꢅꢘꢅꢙꢅꢚꢘꢛꢁ  
ꢀꢄꢂꢄꢒꢖꢅꢑꢌꢌꢋꢜꢂꢐꢝꢅ  
Product Summary  
Package  
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢋꢌꢅꢄꢈꢂꢉ  
ꢍꢍ  
ꢎꢏꢎꢉꢏꢏꢏꢐꢑꢊꢉ  
ꢗꢋꢘꢃꢉꢁꢄꢃꢄꢌꢌꢂꢌꢉ  
ꢒꢓꢅꢆꢔꢂꢉꢓꢕꢄꢇꢇꢂꢌꢖꢉ ꢋꢇꢂꢉ  
ꢀꢇꢙꢖꢅꢄꢅꢂꢉꢚꢂꢖꢆꢖꢅꢄꢇꢓꢂꢉ  
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(ꢘꢃꢃꢂꢇꢅꢉꢌꢆꢝꢆꢅꢄꢅꢆꢋꢇꢉ  
ꢀꢛ  
ꢜꢐꢑꢝ  
&ꢏ'ꢒꢉ  
ꢞꢎꢝ  
ꢎꢏꢞꢒꢉ  
'ꢏꢎꢒꢉ  
!
"#ꢛꢀ$%  
"#)(ꢃ%  
!
'ꢏꢎꢒꢉ  
PG-DSO20  
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 (ꢘꢃꢃꢂꢇꢅꢉꢌꢆꢝꢆꢅꢄꢅꢆꢋꢇꢉ  
Block Diagram  
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$ꢎꢈꢇꢐ  
ꢓꢉꢂꢔꢔꢌꢕꢅ%  
ꢓꢉꢂꢔꢔꢌꢕꢅꢘ  
$ꢎꢂꢋꢅ%  
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7ꢛ6  
$ꢎꢂꢋꢅꢘ  
Data Sheet  
1
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
ꢑꢒꢔꢐꢄꢇꢎꢔꢂꢕꢅꢋꢇꢂꢈꢃꢂꢁꢅꢅ  
ꢋꢔꢂꢃꢔꢋꢌꢅꢄꢈꢂꢉ  
ꢁꢃꢋꢅꢂꢓꢅꢆꢋꢇ  
ꢓꢘꢃꢃꢂꢇꢅꢉꢌꢆꢝꢆꢅ  
ꢊ::  
ꢈꢄꢅꢂꢉ  
ꢓꢋꢇꢅꢃꢋꢌꢉ  
9ꢉ  
ꢓꢕꢄꢃꢈꢂꢉ  
ꢁꢘꢝꢁꢉ  
ꢆꢇꢅꢂꢃꢇꢄꢌꢉ  
ꢔꢋꢌꢅꢄꢈꢂꢉꢖꢘꢁꢁꢌ0ꢉ  
ꢓꢌꢄꢝꢁꢉꢗꢋꢃꢉ  
ꢆꢇ ꢘꢓꢅꢆꢔꢂꢉꢌꢋꢄ  
ꢌꢋꢈꢆꢓꢉ  
ꢀ8-ꢜꢉ  
!ꢛꢜꢉ  
ꢅꢂꢝꢁꢂꢃꢄꢅꢘꢃꢂꢉ  
ꢖꢂꢇꢖꢋꢃꢉ  
ꢃꢂꢔꢂꢃꢖꢂꢉ  
ꢍꢄꢅꢅꢂꢃ0ꢉ  
ꢁꢃꢋꢅꢂꢓꢅꢆꢋꢇꢉ  
,)6ꢉ  
"ꢀꢒ6ꢉ  
ꢀꢁꢂꢇꢉꢌꢋꢄ ꢉꢉ  
 ꢂꢅꢂꢓꢅꢆꢋꢇꢉ  
ꢉꢏꢉꢉ  
ꢉꢉꢉꢉꢉꢉꢉꢉꢉꢉꢓꢕꢄꢇꢇꢂꢌꢉꢜꢉ  
)-ꢜ;&ꢉ  
!ꢛ&ꢉ  
control and protection circuit  
of  
channel 2  
7ꢛ6ꢜ;&ꢉ  
!ꢛꢞꢉ  
ꢀ8-&ꢉ  
ꢀ8-ꢞꢉ  
ꢀ8-ꢐꢉ  
control and protection circuit  
of  
channel 3  
)-ꢞ;ꢐꢉ  
control and protection circuit  
IN4  
of  
channel 4  
7ꢛ6ꢞ;ꢐꢉ  
Data Sheet  
2
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Pin Definitions and Functions  
Pin configuration  
Pin  
1,10,  
Symbol Function  
V Positive power supply voltage. Design the  
bb  
(top view)  
11,12,  
15,16,  
19,20  
3
5
7
9
18  
17  
14  
13  
4
wiring for the simultaneous max. short circuit  
currents from channel 1 to 2 and also for low  
thermal resistance  
Input 1,2,3,4 activates channel 1,2,3,4 in case  
of logic high signal  
V
1 •  
20 V  
19 V  
18 OUT1  
17 OUT2  
bb  
bb  
GND1/2  
IN1  
ST1/2  
IN2  
GND3/4  
IN3  
ST3/4  
IN4  
2
bb  
3
4
5
6
7
8
9
10  
IN1  
IN2  
IN3  
IN4  
OUT1  
OUT2  
OUT3  
OUT4  
ST1/2  
ST3/4  
16 V  
bb  
15 V  
bb  
14 OUT3  
13 OUT4  
Output 1,2,3,4 protected high-side power output  
of channel 1,2,3,4. Design the wiring for the  
max. short circuit current  
12 V  
bb  
V
11 V  
bb  
bb  
Diagnostic feedback 1/2,3/4 of channel 1,2,3,4  
open drain, low on failure  
8
2
6
GND1/2 Ground of chip 1 (channel 1,2)  
GND3/4 Ground of chip 2 (channel 3,4)  
Data Sheet  
3
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Parameter  
Symbol  
Values  
Unit  
Supply voltage (overvoltage protection see page 6)  
Supply voltage for full short circuit protection  
Tj,start =-40 ...+150°C  
Vbb  
Vbb  
43  
36  
V
V
Load current (Short-circuit current, see page 6)  
IL  
self-limited  
60  
A
V
3)  
Load dump protection1) VLoadDump = VA + Vs, VA = 13.5 V VLoaddump  
RI2) = 2 , td = 400 ms; IN= low or high,  
each channel loaded with RL = 13.5 ,  
Operating temperature range  
Storage temperature range  
Power dissipation (DC)4)  
Tj  
Tstg  
-40 ...+150  
-55 ...+150  
°C  
W
Ta = 25°C: Ptot  
Ta = 85°C:  
3.6  
1.9  
(all channels active)  
Maximal switchable inductance, single pulse  
Vbb =12V, Tj,start =150°C4), see diagrams on page 10  
21  
25  
30  
mH  
kV  
IL = 2.3 A, EAS = 76 mJ, 0Ω  
IL = 3.3 A, EAS = 182 mJ, 0Ω  
IL = 4.7 A, EAS = 460 mJ, 0Ω  
Electrostatic discharge capability (ESD)  
(Human Body Model)  
out to all other pins shorted:  
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993  
R=1.5k; C=100pF  
one channel: ZL  
two parallel channels:  
four parallel channels:  
IN:  
ST:  
VESD  
1.0  
4.0  
8.0  
Input voltage (DC) see internal circuit diagram page 9  
Current through input pin (DC)  
VIN  
IIN  
-10 ... +16  
0.3  
V
mA  
Pulsed current through input pin5)  
IIN  
5.0  
5.0  
Current through status pin (DC)  
IST  
1)  
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω  
resistor for the GND connection is recommended.  
2)  
3)  
4)  
R = internal resistance of the load dump test pulse generator  
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V  
bb  
connection. PCB is vertical without blown air. See page 14  
5)  
only for testing  
Data Sheet  
4
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Parameter and Conditions  
Symbol  
Values  
Unit  
min  
typ  
max  
Thermal resistance  
junction - soldering point6)7)  
junction – ambient6)  
each channel: Rthjs  
Rthja  
one channel active:  
all channels active:  
K/W  
--  
--  
--  
--  
--  
--  
44  
35  
17  
--  
--  
@ 6 cm2 cooling area  
--  
Electrical Characteristics  
Parameter and Conditions, each of the four channels Symbol  
Values  
Unit  
at Tj = -40...+150°C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Load Switching Capabilities and Characteristics  
On-state resistance (V to OUT); I = 2 A  
L
bb  
each channel,  
--  
--  
mΩ  
Tj = 25°C: RON  
Tj = 150°C:  
110  
210  
140  
280  
--  
--  
two parallel channels, Tj = 25°C:  
four parallel channels, Tj = 25°C:  
see diagram, page 11  
55  
28  
70  
35  
Nominal load current  
one channel active: IL(NOM)  
two parallel channels active:  
four parallel channels active:  
2.3  
3.3  
4.7  
2.6  
3.7  
5.3  
--  
--  
--  
A
6)  
Device on PCB , T = 85°C, T 150°C  
a
j
Output current while GND disconnected or pulled up8);  
IL(GNDhigh)  
--  
--  
2
mA  
V
= 32 V, V = 0,  
IN  
bb  
see diagram page 9  
Turn-on time9)  
Turn-off time  
RL = 12 Ω  
Slew rate on9)  
Slew rate off9)  
IN  
IN  
to 90% VOUT: ton  
to 10% VOUT: toff  
--  
--  
100  
100  
250  
270  
µs  
10 to 30% VOUT, RL = 12 : dV/dton  
70 to 40% VOUT, RL = 12 : -dV/dtoff  
0.2  
0.2  
--  
--  
1.0 V/µs  
1.1 V/µs  
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V  
connection. PCB is vertical without blown air. See page 14  
Soldering point: upper side of solder edge of device pin 15. See page 14  
not subject to production test, specified by design  
6)  
bb  
7)  
8)  
9)  
See timing diagram on page 12.  
Data Sheet  
5
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Parameter and Conditions, each of the four channels Symbol  
Values  
Unit  
at Tj = -40...+150°C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Operating Parameters  
Operating voltage  
Undervoltage switch off10  
Vbb(on)  
Tj =-40...25°C: Vbb(u so)  
Tj =125°C:  
5.5  
--  
--  
--  
--  
40  
4.5  
V
V
)
-- 4.511)  
Overvoltage protection12)  
Ibb = 40 mA  
Vbb(AZ)  
41  
47  
52  
V
)
Standby current13  
Tj =-40°C...25°C  
:
Ibb(off)  
IL(off)  
IGND  
--  
--  
--  
--  
9
16  
24  
µA  
VIN = 0; see diagram page 11  
Tj =150°C:  
--  
Tj =125°C:  
-- 1611)  
1
Off-State output current (included in Ibb(off)  
VIN = 0; each channel  
Operating current 14), VIN = 5V,  
)
5
µA  
--  
--  
0.5  
1.9  
0.9  
3.3  
mA  
IGND = IGND1 + IGND2  
,
one channel on:  
all channels on:  
Protection Functions15)  
Current limit, = 0V, (see timing diagrams, page 12)  
V
out  
j =-40°C: IL(lim)  
--  
--  
5
--  
9
14  
--  
A
A
T
j =25°C:  
T
j =+150°C:  
--  
--  
T
Repetitive short circuit current limit,  
Tj = Tjt  
each channel IL(SCr)  
two,three or four parallel channels  
--  
--  
6.5  
6.5  
--  
--  
(see timing diagrams, page 12)  
Initial short circuit shutdown time  
out  
Tj,start =25°C: toff(SC)  
--  
2
--  
ms  
V
V
= 0V  
(see timing diagrams on page 12)  
Output clamp (inductive load switch off)16)  
VON(CL)  
41  
47  
52  
at V  
ON(CL)  
= V - V , I = 40 mA  
bb OUT L  
Thermal overload trip temperature  
Thermal hysteresis  
Tjt  
Tjt  
150  
--  
--  
10  
--  
--  
°C  
K
10)  
is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltage  
falling below the lower limit of Vbb(on)  
11)  
12)  
not subject to production test, specified by design  
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω  
resistor for the GND connection is recommended). See also V  
circuit diagram on page 9.  
Measured with load; for the whole device; all channels off  
in table of protection functions and  
ON(CL)  
13)  
14)  
15)  
Add I , if I > 0  
ST  
ST  
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the  
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not  
designed for continuous repetitive operation.  
16)  
If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest  
V
ON(CL)  
Data Sheet  
6
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Parameter and Conditions, each of the four channels Symbol  
Values  
Unit  
at Tj = -40...+150°C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Reverse Battery  
)
Reverse battery voltage 17  
-Vbb  
-VON  
--  
--  
--  
600  
32  
--  
V
mV  
Drain-source diode voltage (V > V  
)
bb  
out  
L =-2.0A, T =+150°C  
j
I
Diagnostic Characteristics  
Open load detection voltage  
V OUT(OL)  
1.7  
2.5  
2.8  
4.0  
4.0  
6.0  
V
1
Input and Status Feedback18)  
Input resistance  
(see circuit page 9)  
RI  
kΩ  
Input turn-on threshold voltage  
Input turn-off threshold voltage  
Input threshold hysteresis  
VIN(T+)  
VIN(T-)  
VIN(T)  
td(STon)  
--  
1.0  
--  
--  
--  
0.2  
10  
2.5  
--  
--  
V
V
V
Status change after positive input slope19)  
--  
20  
3s  
with open load  
Status change after positive input slope19)  
with overload  
Status change after negative input slope  
with open load  
td(STon)  
td(SToff)  
td(SToff)  
30  
--  
--  
--  
--  
--  
500  
20  
3s  
3s  
3s  
Status change after negative input slope19)  
--  
with overtemperature  
Off state input current  
On state input current  
Status output (open drain)  
Zener limit voltage  
VIN = 0.4 V: IIN(off)  
VIN = 5 V: IIN(on)  
5
10  
--  
35  
20  
60  
µA  
µA  
IST = +1.6 mA: VST(high)  
IST = +1.6 mA: VST(low)  
5.4  
--  
--  
--  
--  
0.6  
V
ST low voltage  
17)  
Requires a 150 resistor in GND connection. The reverse load current through the intrinsic drain-source  
diode has to be limited by the connected load. Power dissipation is higher compared to normal operating  
conditions due to the voltage drop across the drain-source diode. The temperature protection is not active  
during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and  
circuit page 9).  
18)  
19)  
If ground resistors R  
are used, add the voltage drop across these resistors.  
GND  
not subject to production test, specified by design  
Data Sheet  
7
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Truth Table  
IN1  
IN3  
IN2  
IN4  
OUT1  
OUT3  
OUT2  
OUT4  
ST1/2  
ST3/4  
Channel 1 and 2  
Channel 3 and 4  
Chip 1  
Chip 2  
(equivalent to channel 1 and 2)  
Normal operation  
L
L
H
H
L
L
H
L
H
X
X
L
L
H
H
Z
L
H
L
H
X
X
H
H
H
H
20)  
Open load  
Channel 1 (3)  
L
H
H
H
15)  
Channel 2 (4)  
both channel  
X
X
L
X
H
L
H
X
X
L
H
X
X
Z
H
L
H
H
L
L
H
L
H
L
Overtemperature  
L
H
X
X
X
L
L
L
L
L
L
X
X
L
L
L
X
X
L
L
Channel 1 (3)  
Channel 2 (4)  
H
L = "Low" Level  
H = "High" Level  
X = don't care  
Z = high impedance, potential depends on external circuit  
Status signal valid after the time delay shown in the timing diagrams  
Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and  
outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4  
have to be configured as a 'Wired OR' function with a single pull-up resistor.  
Terms  
!
ꢍꢍ  
ꢀꢛꢜ  
ꢀꢛꢞ  
"ꢂꢄ ꢗꢃꢄꢝꢂ  
"ꢂꢄ ꢗꢃꢄꢝꢂ  
ꢍꢍ  
ꢀꢛ&  
ꢀꢛꢐ  
!
!
!
!
!ꢛꢜ  
!ꢛ&  
!ꢛꢞ  
!ꢛꢐ  
ꢍꢍ  
ꢍꢍ  
=
>
!
!
!
!
!ꢛꢜ  
!ꢛꢞ  
"ꢜ  
"ꢞ  
ꢜꢐ  
ꢜꢞ  
ꢜ<  
ꢜ=  
ꢀ8-ꢜ  
ꢀ8-&  
ꢀ8-ꢞ  
ꢀ8-ꢐ  
ꢍ+,ꢑ-)  
ꢍ+,ꢑ-)  
!ꢛ&  
!ꢛꢐ  
"&  
"ꢐ  
(ꢕꢆꢁꢉꢜ  
(ꢕꢆꢁꢉ&  
!
!
)-ꢞ;ꢐ  
)-ꢜ;&  
<
)-ꢜ;&  
)-ꢞ;ꢐ  
7ꢛ6ꢜ;&  
&
7ꢛ6ꢞ;ꢐ  
'
)-ꢞ;ꢐ  
!ꢛꢜ  
!ꢛꢞ  
!ꢛ&  
!ꢛꢐ  
)-ꢜ;&  
ꢀ8-ꢜ  
ꢀ8-ꢞ  
!
!
ꢀ8-&  
ꢀ8-ꢐ  
7ꢛ6ꢜ;&  
7ꢛ6ꢞ;ꢐ  
7ꢛ6ꢜ;&  
7ꢛ6ꢞ;ꢐ  
Leadframe (V ) is connected to pin 1,10,11,12,15,16,19,20  
bb  
External R  
optional; two resistors R  
, R  
GND1  
=150 or a single resistor R =75 for reverse  
GND  
GND  
GND2  
battery protection up to the max. operating voltage.  
20)  
L, if potential at the Output exceeds the OpenLoad detection voltage  
Data Sheet  
8
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Overvolt. and reverse batt. protection  
Input circuit (ESD protection), IN1 to IN4  
9ꢉꢎꢊ  
9ꢉꢊ  
ꢍꢍ  
!
!ꢛ  
)-  
?&  
!
!ꢛ  
,)6ꢙ?6 !  
$ꢎꢈꢇꢐ  
!
!
)-  
ꢀ8-  
7ꢛ6  
)-  
?ꢜ  
The use of ESD zener diodes as voltage clamp at DC  
conditions is not recommended.  
7ꢛ6  
"ꢋꢄ  
7ꢛ6  
)ꢆꢈꢇꢄꢌꢉ7ꢛ6  
"ꢋꢄ ꢉ7ꢛ6  
Status output, ST1/2 or ST3/4  
V
Z1  
= 6.1 V typ., V = 47 V typ., R = 150 ,  
GND  
Z2  
R
= 15 k, R = 3.5 ktyp.  
ST  
I
9ꢎꢊ  
In case of reverse battery the load current has to be  
limited by the load. Temperature protection is not  
active  
)-#ꢀꢛ%  
)-  
Open-load detection, OUT1...4  
,)6ꢙ  
?6  
OFF-state diagnostic condition:  
7ꢛ6  
Open Load, if V  
> 3 V typ.; IN low  
OUT  
ESD-Zener diode: 6.1 V typ., max 0.3 mA; R  
ST(ON)  
< 375 Ω  
at 1.6 mA. The use of ESD zener diodes as voltage clamp at  
DC conditions is not recommended.  
ꢍꢍ  
,@-  
Inductive and overvoltage output clamp,  
OUT1...4  
ꢀ++  
ꢀ8-  
9ꢊ  
ꢍꢍ  
,!ꢌꢔꢅꢕꢎꢂꢋ  
ꢋꢌꢄꢌꢐꢄꢇꢎꢔ  
?
"ꢋꢈꢆꢓ  
ꢘꢇꢆꢅ  
ꢀꢛ  
)ꢆꢈꢇꢄꢌꢉ7ꢛ6  
ꢀ8-  
GND disconnect  
1ꢋ*ꢂꢃꢉ7ꢛ6  
V
ON  
clamped to V = 47 V typ.  
ON(CL)  
ꢍꢍ  
!ꢛ  
ꢀ8-  
ꢍ+,ꢑ-)  
)-  
7ꢛ6  
ꢍꢍ  
!ꢛ  
)-  
7ꢛ6  
Any kind of load. In case of IN=high is V  
OUT  
V -V .  
IN IN(T+)  
Due to V  
> 0, no V = low signal available.  
GND  
ST  
Data Sheet  
9
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Inductive load switch-off energy  
GND disconnect with GND pull up  
dissipation  
ꢍꢍ  
,
,
ꢍꢍ  
!ꢛ  
ꢒ)  
,
"ꢋꢄ  
ꢀ8-  
ꢍ+,ꢑ-)  
ꢍꢍ  
!ꢛ  
)-  
7ꢛ6  
ꢀ8-  
ꢍ+,ꢑ-)  
"
.
)-  
,
"
7ꢛ6  
!ꢛ )-  
7ꢛ6  
ꢍꢍ  
?
"
,
"
Any kind of load. If V  
> V - V device stays off  
IN IN(T+)  
GND  
Due to V  
> 0, no V = low signal available.  
ST  
GND  
Energy stored in load inductance:  
2
L
1
E = / ·L·I  
V
disconnect with energized inductive  
L
2
bb  
load  
While demagnetizing load inductance, the energy  
dissipated in PROFET is  
E = Ebb + EL - ER= VON(CL)·i (t) dt,  
AS  
L
ꢕꢆꢈꢕ  
ꢍꢍ  
!ꢛ  
with an approximate solution for R > 0:  
L
ꢀ8-  
ꢍ+,ꢑ-)  
I ·L  
L
I ·R  
L L  
E =  
AS  
(V +|V  
|) ꢀꢁ(1+  
)
OUT(CL)  
bb  
2·R  
|V  
OUT(CL)  
|
)-  
L
7ꢛ6  
Maximum allowable load inductance for  
4)  
a single switch off (one channel)  
ꢍꢍ  
ꢀꢁꢂꢁꢃꢁꢄꢅ ꢆꢇꢁT  
= 150°C, V = 12 V, R = 0 Ω  
ꢀꢁ j,start  
bb L  
For inductive load currents up to the limits defined by ZL  
(max. ratings and diagram on page 10) each switch is  
Z [mH]  
L
ꢜꢑꢑꢑ  
ꢜꢑꢑ  
ꢜꢑ  
protected against loss of V  
.
bb  
Consider at your PCB layout that in the case of Vbb dis-  
connection with energized inductive load all the load current  
flows through the GND connection.  
&
'
I
[A]  
L
Data Sheet  
10  
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Typ. on-state resistance  
ꢉꢊ  
ꢁꢂꢁꢃꢁꢄꢋ ꢍꢎ ; I = 2 A, IN = high  
L
ꢌꢌ ꢏꢁ  
R
[mOhm]  
ON  
-AꢉBꢉꢜꢎꢑꢠ(  
&ꢐꢑ  
ꢜ<ꢑ  
ꢜ&ꢑ  
'ꢑ  
&ꢎꢠ(  
ꢙꢐꢑꢠ(  
ꢎꢉꢉꢉꢉꢉꢉꢉ=ꢉꢉꢉꢉꢉꢉꢉ>ꢉꢉꢉꢉꢉꢉꢉꢜꢜ  
ꢞꢑ  
ꢐꢑ  
V
bb  
[V]  
Typ. standby current  
ꢅ ꢁꢂꢁꢃꢁꢄꢎ ; V = 9...34 V, IN1,2,3,4 = low  
ꢌꢌꢄꢐꢃꢃꢆ ꢏꢁ bb  
I
[µA]  
bb(off)  
ꢐꢎ  
ꢐꢑ  
ꢞꢎ  
ꢞꢑ  
&ꢎ  
&ꢑ  
ꢜꢎ  
ꢜꢑ  
ꢙꢎꢑ  
ꢎꢑ  
ꢜꢑꢑ  
ꢜꢎꢑ  
&ꢑꢑ  
T [°C]  
j
Data Sheet  
11  
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Timing diagrams  
All channels are symmetric and consequently the diagrams are valid for channel 1 to  
channel 4  
Figure 2b: Switching a lamp:  
Figure 1a: V turn on:  
bb  
!ꢛꢜ  
!ꢛ  
!ꢛ&  
)-  
ꢍꢍ  
ꢀ8-ꢜ  
ꢀ8-  
ꢀ8-&  
)-ꢜꢉꢋꢁꢂꢇꢉ ꢃꢄꢆꢇ  
)-&ꢉꢋꢁꢂꢇꢉ ꢃꢄꢆꢇ  
!
"
Figure 2a: Switching a resistive load,  
turn-on/off time and slew rate definition:  
Figure 3a: Turn on into short circuit:  
shut down by overtemperature, restart by cooling  
!ꢛ  
!ꢛꢜ  
ꢋꢅꢕꢂꢃꢉꢓꢕꢄꢇꢇꢂꢌEꢉꢇꢋꢃꢝꢄꢌꢉꢋꢁꢂꢃꢄꢅꢆꢋꢇ  
ꢀ8-  
!
"ꢜ  
>ꢑD  
!
 ꢊ; ꢅꢋꢗꢗ  
on  
"#ꢌꢆꢝ%  
!
"#)(ꢃ%  
 ꢊ; ꢅꢋꢇ  
off  
ꢜꢑD  
ꢋꢗꢗ#)(%  
)-  
!
"
Heating up of the chip may require several milliseconds, depending  
on external conditions  
Data Sheet  
12  
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Figure 3b: Turn on into short circuit:  
shut down by overtemperature, restart by cooling  
Figure 5a: Open load: detection in OFF-state, turn  
on/off to open load  
(two parallel switched channels 1 and 2)  
Open load of channel 1; other channels normal  
operation  
!ꢛꢜ;&  
!ꢛꢜ  
!ꢉꢉꢉꢉ9ꢉ!  
"ꢜꢉꢉꢉꢉꢉ"&  
ꢀ8-ꢜ  
&5!  
"#ꢌꢆꢝ%  
!
"ꢜ  
!
"#)(ꢃ%  
)-  
ꢋꢗꢗ#)(%  
)-ꢜ;&  
ꢜꢑ3ꢖ  
ꢎꢑꢑ3ꢖ  
ST1 and ST2 have to be configured as a 'Wired OR' function  
ST1/2 with a single pull-up resistor.  
Figure 6a: Status change after, turn on/off to  
overtemperature  
Overtemperature of channel 1; other channels normal  
operation  
Figure 4a: Overtemperature:  
Reset if T <T  
j
jt  
!ꢛꢜ  
'(  
)-  
ꢀ)  
ꢞꢑ3ꢖ  
&ꢑ3ꢖ  
1
,/)  
)
0
Data Sheet  
13  
V1.0, 2007-05-13  
Smart High-Side Power Switch  
BTS716G  
Package Outlines  
0.35 x 45˚  
1)  
7.6 -0.2  
+0.09  
0.23  
8˚ max  
0.4 +0.8  
1.27  
0.35 +0.152)  
0.3  
10.3  
0.1  
0.2 24x  
11  
20  
1
GPS05094  
10  
1)  
12.8-0.2  
Index Marking  
1) Does not include plastic or metal protrusions of 0.15 max per side  
2) Does not include dambar protrusion of 0.05 max per side  
Figure 1  
PG-DSO-20 (Plastic Dual Small Outline Package) (RoHS-compliant)  
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with  
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-  
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).  
Please specify the package needed (e.g. green package) when placing an order  
You can find all of our packages, sorts of packing and others in our  
Infineon Internet Page “Products”: http://www.infineon.com/products.  
Dimensions in mm  
V1.0, 2007-05-13  
Data Sheet  
17  
Smart High-Side Power Switch  
BTS716G  
Revision History  
Version  
Date  
Changes  
1.0  
2007-05-13  
Creation of the green datasheet.  
Data Sheet  
18  
V1.0, 2007-05-13  
Edition 2007-05-13  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
© Infineon Technologies AG 5/13/07.  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values  
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby  
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  

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