BUP307 [INFINEON]

IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated); IGBT （低正向压降高开关速度低尾电流闭锁免费额定雪崩）


型号：	BUP307
厂家：	Infineon
描述：	IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) IGBT （低正向压降高开关速度低尾电流闭锁免费额定雪崩）晶体开关晶体管双极性晶体管栅
文件：	总7页 (文件大小：347K)
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BUP 307

IGBT

Preliminary data

• Low forward voltage drop

• High switching speed

• Low tail current

• Latch-up free

• Avalanche rated

Pin 1

Pin 2

Pin 3

Type

Package

Ordering Code

BUP 307

1200V 35A

TO-218 AB

Q67078-A4201-A2

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

Collector-gate voltage

1200

CGR

Ω

= 20 k

1200

± 20

Gate-emitter voltage

DC collector current

T = 25 °C

T = 90 °C

Pulsed collector current, t = 1 ms

Cpuls

T = 25 °C

T = 90 °C

Avalanche energy, single pulse

tot

Ω

I = 15 A, V = 50 V, R = 25

L = 200 µH, T = 25 °C

Power dissipation

T = 25 °C

310

Chip or operating temperature

Storage temperature

-55 ... + 150

°C

stg

Semiconductor Group

Dec-07-1995

BUP 307

Maximum Ratings

Parameter

Symbol

Values

Unit

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

Thermal Resistance

≤

IGBT thermal resistance, chip case

thJC

0.4

K/W

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Static Characteristics

Gate threshold voltage

GE(th)

= V

I = 0.1 mA

CE, C

4.5

5.5

6.5

Collector-emitter saturation voltage

CE(sat)

= 15 V, I = 15 A, T = 25 °C

2.8

3.8

3.3

4.3

4.5

= 15 V, I = 15 A, T = 125 °C

= 15 V, I = 15 A, T = 150 °C

Zero gate voltage collector current

µA

CES

GES

= 1200 V, V = 0 V, T = 25 °C

250

= 1000 V, V = 0 V, T = 125 °C

1000

Gate-emitter leakage current

= 20 V, V = 0 V

0.1

100

AC Characteristics

Transconductance

= 20 V, I = 15 A

5.5

Input capacitance

= 25 V, V = 0 V, f = 1 MHz

iss

2000

160

2700

240

Output capacitance

= 25 V, V = 0 V, f = 1 MHz

oss

rss

Reverse transfer capacitance

= 25 V, V = 0 V, f = 1 MHz

100

Semiconductor Group

Dec-07-1995

BUP 307

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ.

Unit

min.

max.

Switching Characteristics, Inductive Load at T = 125 °C

Turn-on delay time

= 600 V, V = 15 V, I = 15 A

d(on)

Ω

Gon

= 33

310

Rise time

= 600 V, V = 15 V, I = 15 A

Gon

= 33 Ω

Turn-off delay time

= 600 V, V = -15 V, I = 15 A

d(off)

Goff

= 33 Ω

230

Fall time

= 600 V, V = -15 V, I = 15 A

Goff

= 33 Ω

Total turn-off loss energy

= 600 V, V = -15 V, I = 15 A

mWs

off

Goff

= 33 Ω

1.7

Semiconductor Group

Dec-07-1995

BUP 307

Power dissipation

Collector current

I = (T )

C C

= (T )

tot

≤

≥

≤

parameter: T 150 °C

parameter: V

15 V , T 150 °C

320

P_tot

240

I_C

200

160

120

80 100 120

°C 160

T_C

80 100 120

°C 160

T_C

Safe operating area

Transient thermal impedance IGBT

I = (V

)

= (t )

th JC

≤

parameter: D = 0, T = 25°C , T 150 °C

parameter: D = t / T

10 ²

10 ⁰

= 3.5µs

10 µs

K/W

I_C

Z_thJC

100 µs

1 ms

10 ¹

10 ^-1

D = 0.50

0.20

10 ms

10 ⁰

10 ^-2

0.10

0.05

0.02

single pulse

0.01

10 ^-1

10 ^-3

10 ⁰

10 ¹

10 ²

10 ³

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ^-1s 10 ⁰

t_p

V_CE

Semiconductor Group

Dec-07-1995

BUP 307

Typ. output characteristics

I = f(V

Typ. transfer characteristics

I = f (V

)

parameter: t = 80 µs, T = 125 °C

parameter: t = 80 µs, V = 20 V, T = 25 °C

P CE j

Typ. saturation characteristics

= f (V

Typ. saturation characteristics

V_CE(sat)= f (V )

)

CE(sat)

parameter: T = 25 °C

parameter: T = 125 °C

Semiconductor Group

Dec-07-1995

BUP 307

Typ. capacitances

C = f (V

Typ. gate charge

)

= (Q

)

Gate

parameter: I

= 20 A

parameter: V = 0 V, f = 1 MHz

C puls

V_GE

400 V

800 V

20 40 60 80 100 120 140 nC 180

Q_Gate

Typ. switching time t = f(R )

inductive load, with freewheel diode BYP 102

parameter: T = 125 °C, V = 600 V, V

= ± 15 V, I = 10 A

Semiconductor Group

Dec-07-1995

BUP 307

Package Outlines

Dimensions in mm

Weight: 8 g

Semiconductor Group

Dec-07-1995

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