BUP311D [INFINEON]
IGBT With Antiparallel Diode Preliminary data sheet; IGBT随着反并联二极管的初步数据表
| 型号： | BUP311D |
| 厂家： | 
Infineon |
| 描述： | IGBT With Antiparallel Diode Preliminary data sheet |
| 文件： | 总9页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 311D
Infineon
IGBT With Antiparallel Diode
Preliminary data sheet
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Former Development ID: BUP 3JKD
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
I
Package
Ordering Code
C67078-A4102
CE
C
BUP 311D
1200V A
TO-218 AB
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
1200
V
V
V
CE
CGR
= 20 kΩ
1200
± 20
R
GE
Gate-emitter voltage
DC collector current
V
GE
A
I
C
= 25 °C
20
12
T
T
C
C
= 100 °C
Pulsed collector current, = 1 ms
t
I
I
I
p
Cpuls
F
= 25 °C
40
tbd
tbd
125
T
C
Diode forward current
= 100 °C
T
C
Pulsed diode current, = 1 ms
t
p
Fpuls
= 25 °C
T
C
Power dissipation
= 25 °C
W
P
tot
T
C
Chip or operating temperature
Storage temperature
-55 ... + 150
-55 ... + 150
°C
T
T
j
stg
Semiconductor Group
1
May-06-1999
BUP 311D
Infineon
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
-55 ... + 150
-55 ... + 150
55 / 150 / 56
°C
T
T
-
j
stg
IEC climatic category, DIN IEC 68-1
-
Thermal Resistance
Thermal resistance, junction - case
Diode thermal resistance, chip case
≤ 1
K/W
R
R
thJC
≤ 2.5
thJCD
, at T = 25 °C, unless otherwise specified
Electrical Characteristics
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
=
= 0.3 mA, = 25 °C
4.5
5.5
6.5
V
V
I
T
GE
CE, C
j
Collector-emitter saturation voltage
CE(sat)
= 15 V, = 8 A, = 25 °C
-
-
-
-
2.5
3.1
3.4
4.3
3
3.7
-
V
V
V
V
I
T
GE
GE
GE
GE
C
j
= 15 V, = 8 A, = 125 °C
I
T
C
j
= 15 V, = 16 A, = 25 °C
I
T
C
j
= 15 V, = 16 A, = 125 °C
-
I
T
C
j
Zero gate voltage collector current
= 1200 V, = 0 V, = 25 °C
mA
nA
I
I
CES
GES
-
-
-
-
0.4
V
V
T
j
CE
GE
Gate-emitter leakage current
= 25 V, = 0 V
120
V
V
CE
GE
Semiconductor Group
2
May-06-1999
BUP 311D
Infineon
AC Characteristics
Transconductance
S
g
fs
= 20 V, = 8 A
4
-
-
V
I
CE
C
Input capacitance
= 25 V, = 0 V, = 1 MHz
pF
C
C
C
iss
-
600
tbd
tbd
tbd
V
V
f
CE
GE
Output capacitance
= 25 V, = 0 V, = 1 MHz
oss
rss
-
-
60
38
V
V
f
CE
GE
Reverse transfer capacitance
= 25 V, = 0 V, = 1 MHz
V
V
f
CE
GE
, at T = 25 °C, unless otherwise specified
Electrical Characteristics
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
ns
t
t
t
t
d(on)
= 600 V,
= 15 V, = 8 A
I
C
V
V
CC
GE
= 150
-
-
-
-
55
tbd
tbd
tbd
tbd
R
Ω
Gon
Rise time
= 600 V,
r
= 15 V, = 8 A
V
V
I
CC
GE
C
= 150 Ω
50
R
Gon
Turn-off delay time
d(off)
= 600 V,
= -15 V, = 8 A
I
C
V
V
CC
GE
= 150 Ω
380
80
R
Goff
Fall time
= 600 V,
f
= -15 V, = 8 A
V
V
I
CC
GE
C
= 150 Ω
R
Goff
Semiconductor Group
3
May-06-1999
BUP 311D
Infineon
Free-Wheel Diode
Diode forward voltage
V
V
F
= 8 A,
= 8 A,
= 0 V, = 25 °C
-
-
tbd
tbd
tbd
-
I
I
V
V
T
F
F
GE
GE
j
= 0 V, = 125 °C
T
j
Reverse recovery time
= 8 A, = -600 V,
V
GE
ns
µC
t
rr
= 0 V
I
V
F
R
i / t = -400 A/µs, = 25 °C
d d
-
tbd
tbd
T
F
j
Reverse recovery charge
= 15 A, = -600 V,
Q
rr
= 0 V
I
V
V
GE
F
R
i / t = -400 A/µs
d d
F
= 25 °C
-
-
tbd
tbd
tbd
tbd
T
T
j
j
= 125 °C
Semiconductor Group
4
May-06-1999
BUP 311D
Infineon
Power dissipation
Collector current
ƒ
= (
ƒ
T
P
T
I
)
= (
)
C
tot
C
C
≤
≥
≤
T
150 °C
j
T
V
parameter:
150 °C
parameter:
15 V ,
j
GE
130
W
22
A
110
18
Ptot
100
IC
16
14
12
10
8
90
80
70
60
50
40
30
20
6
4
2
10
0
0
0
0
20
40
60
80 100 120 °C 160
TC
20
40
60
80 100 120 °C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
= (
ƒ
t
p
I
V
Z
)
= ( )
th JC
C
CE
≤
D
, T
T
D = t
T
/
p
parameter: = 0
= 25°C ,
150 °C
parameter:
C
j
10 1
10 2
t
= 15.0µs
p
K/W
A
IC
ZthJC
10 0
10 1
100 µs
10 -1
D = 0.50
0.20
10 0
0.10
1 ms
0.05
10 -2
0.02
0.01
single pulse
10 -4
10 ms
3
10 -1
10 0
10 -3
10 -5
10 1
10 2
V
10 -3
10 -2
10 -1 s 10 0
tp
DC
10
VCE
Semiconductor Group
5
May-06-1999
BUP 311D
Infineon
Typ. output characteristics
Typ. output characteristics
I = f (V
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p
j
p
j
20
A
20
A
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
16
14
12
10
8
16
14
12
10
8
IC
IC
7V
7V
6
6
4
4
2
0
2
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
25
A
22
IC
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
V
VGE
14
Semiconductor Group
6
May-06-1999
BUP 311D
Infineon
Typ. switching time
Typ. switching time
t = f (R ) , inductive load , = 125°C
Tj
t = f (I ) , inductive load , T = 125°C
G
C
j
par.:V =600V, V = ±15V, I =8 A
Ω
par.:V =600V, V = ±15V, R =153
CE
GE
C
CE
GE
G
10 3
10 3
tdoff
t
t
tdoff
ns
ns
tf
tdon
tr
10 2
tr
10 2
tf
tdon
10 1
10 1
0
50 100 150 200 250 300 350 400
500
0
4
8
12
16
20
24
A
IC
30
Ω
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.:V =600V, V = ±15V, R =153Ω
par.:V =600V, V = ±15V, I =8 A
CE
GE
G
CE
GE
C
10
10
mWs
mWs
8
7
6
5
4
3
2
E
8
7
6
5
4
3
2
E
Eon
Eoff
Eon
Eon
1
0
1
0
0
4
8
12
16
20
24
A
IC
30
0
50 100 150 200 250 300 350 400
500
Ω
RG
Semiconductor Group
7
May-06-1999
BUP 311D
Infineon
Typ. capacitances
f V
Typ. gate charge
C
= (
)
ƒ
V
Q
= (
)
CE
GE
Gate
I
parameter:
= 15 A
C puls
10 4
pF
20
V
16
C
VGE
14
12
10
8
10 3
10 2
10 1
Ciss
6
Coss
Crss
4
2
0
0
-4
-8
-12
-16
-20
-28
0
5
10
15
20
25
30
V
40
VCE
QGate
Short circuit safe operating area
f V
Reverse biased safe operating area
I
T
I
f
T
= (V ) , = 150°C
j
= (
) , = 150°C
Csc
CE
j
Cpuls
CE
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
parameter: VGE = 15 V
10
2.5
I
Csc/IC(90°C)
I
Cpuls/IC
6
4
1.5
1.0
2
0
0.5
0.0
0
200 400 600 800 1000 1200
V
1600
0
200 400 600 800 1000 1200
V
1600
VCE
VCE
Semiconductor Group
8
May-06-1999
BUP 311D
Infineon
Typ. forward characteristics
I = f (V )
Transient thermal impedance Diode
ƒ
Z
t
= ( )
F
F
th JC
p
D = t T
/
p
parameter: T
parameter:
j
10 1
30
A
26
K/W
IF
24
22
20
18
16
14
12
10
8
ZthJC
10 0
Tj=125°C
Tj=25°C
D = 0.50
0.20
10 -1
0.10
0.05
0.02
6
single pulse
0.01
4
2
0
10 -2
10 -5
0.0
0.5
1.0
1.5
2.0
V
3.0
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VF
Semiconductor Group
9
May-06-1999
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