BUP313 [INFINEON]
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated); IGBT （低正向压降高开关速度低尾电流闭锁免费额定雪崩）
| 型号： | BUP313 |
| 厂家： | 
Infineon |
| 描述： | IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) |
| 文件： | 总8页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 313
IGBT
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
CE
I
Package
Ordering Code
C
BUP 313
1200V 32A
TO-218 AB
Q67040-A4208-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1200
V
CE
CGR
Ω
R
= 20 k
1200
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
A
C
T = 25 °C
32
20
C
T = 90 °C
C
Pulsed collector current, t = 1 ms
I
p
Cpuls
T = 25 °C
64
40
C
T = 90 °C
C
Avalanche energy, single pulse
E
AS
P
tot
mJ
W
Ω
I = 15 A, V = 50 V, R = 25
C
CC
GE
L = 200 µH, T = 25 °C
22
j
Power dissipation
T = 25 °C
C
200
Chip or operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Semiconductor Group
1
Jul-30-1996
BUP 313
Maximum Ratings
Parameter
Symbol
Values
E
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
-
55 / 150 / 56
Thermal Resistance
≤
Thermal resistance, chip case
R
thJC
0.63
K/W
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
GE
= V
I = 0.35 mA
CE, C
4.5
5.5
6.5
Collector-emitter saturation voltage
CE(sat)
V
GE
V
GE
V
GE
V
GE
= 15 V, I = 15 A, T = 25 °C
-
-
-
-
2.7
3.3
3.4
4.3
3.2
3.9
C
j
= 15 V, I = 15 A, T = 125 °C
C
j
= 15 V, I = 30 A, T = 25 °C
-
C
j
= 15 V, I = 30 A, T = 125 °C
-
C
j
Zero gate voltage collector current
= 1200 V, V = 0 V, T = 25 °C
I
I
mA
nA
CES
GES
V
CE
-
-
-
-
0.8
GE
j
Gate-emitter leakage current
= 25 V, V = 0 V
V
GE
100
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 15 A
-
-
-
-
12
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
CE
1000
150
70
1350
225
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
100
GE
Semiconductor Group
2
Jul-30-1996
BUP 313
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 600 V, V = 15 V, I = 15 A
t
t
t
t
ns
d(on)
V
CC
GE
C
Ω
R
Gon
= 82
-
-
-
-
70
100
70
Rise time
= 600 V, V = 15 V, I = 15 A
r
V
CC
GE
C
R
Gon
= 82 Ω
45
Turn-off delay time
= 600 V, V = -15 V, I = 15 A
d(off)
V
CC
GE
C
R
Goff
= 82 Ω
400
70
530
95
Fall time
= 600 V, V = -15 V, I = 15 A
f
V
CC
GE
C
R
Goff
= 82 Ω
Semiconductor Group
3
Jul-30-1996
BUP 313
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
32
220
W
A
180
Ptot
IC
24
160
140
120
100
80
20
16
12
8
60
40
4
0
20
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 2
10 0
t
= 9.0µs
10 µs
p
A
K/W
IC
ZthJC
10 1
10 -1
100 µs
D = 0.50
0.20
1 ms
10 0
10 -2
0.10
0.05
0.02
10 ms
single pulse
0.01
DC
10 3
10 -1
10 -3
10 0
10 1
10 2
V
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Jul-30-1996
BUP 313
Typ. output characteristics
I = f (V
Typ. output characteristics
I = f (V
)
)
CE
C
CE
C
parameter: t = 80 µs, T = 25 °C
parameter: t = 80 µs, T = 125 °C
p j
p
j
30
A
30
A
26
24
22
20
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
17V
15V
13V
11V
9V
17V
15V
13V
11V
9V
IC
IC
7V
7V
6
6
4
4
2
0
2
0
0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
I = f (V
)
GE
C
parameter: t = 80 µs, V = 20 V
p
CE
30
A
26
24
22
20
18
16
14
12
10
8
IC
6
4
2
0
0
2
4
6
8
10
V
14
VGE
Semiconductor Group
5
Jul-30-1996
BUP 313
Typ. switching time
Typ. switching time
t = f (R ) , inductive load , Tj = 125°C
I = f (I ) , inductive load , T = 125°C
G
C
j
par.: V = 600 V, V = ± 15 V, I = 15 A
par.: V = 600 V, V = ± 15 V, R = 82
Ω
CE
10 3
GE
C
CE
10 3
GE
G
tdoff
tdoff
t
t
ns
ns
tdon
tr
10 2
10 2
tr
tdon
tf
tf
10 1
10 1
0
50
100
150
200
300
Ω
0
5
10
15
20
25
30
A
IC
40
RG
Typ. switching losses
E = f (I ) , inductive load , T = 125°C
Typ. switching losses
E = f (R ) , inductive load , T = 125°C
C
j
G
j
par.: V = 600 V, V = ± 15 V, R = 82 Ω
CE
GE
G
par.: V = 600V, V = ± 15 V, I = 15 A
CE
GE
C
10
10
mWs
mWs
8
7
6
5
4
3
2
8
7
6
5
4
3
2
E
E
Eon
Eon
Eoff
Eoff
1
0
1
0
0
5
10
15
20
25
30
A
IC
40
0
50
100
150
200
300
Ω
RG
Semiconductor Group
6
Jul-30-1996
BUP 313
Typ. capacitances
C = f (V
Typ. gate charge
)
ƒ
V
= (Q
)
CE
GE
Gate
parameter: V = 0 V, f = 1 MHz
parameter: I
= 15 A
GE
C puls
10 1
20
V
nF
16
VGE
C
600 V
800 V
14
12
10
8
10 0
10 -1
10 -2
Ciss
Coss
Crss
6
4
2
0
0
10 20 30 40 50 60 70 80
100
0
5
10
15
20
25
30
V
40
VCE
QGate
Short circuit safe operating area
= f (V ) , T = 150°C
Reverse biased safe operating area
I = f (V ) , T = 150°C
Cpuls
I
Csc
CE
j
CE
j
parameter: VGE = ± 15 V, tsc ≤ 10 µs, L < 25 nH
parameter: VGE = 15 V
10
2.5
ICsc/IC(90°C)
ICpuls/IC
6
1.5
1.0
4
2
0
0.5
0.0
0
200 400 600 800 1000 1200
V
VCE
1600
0
200 400 600 800 1000 1200
V
VCE
1600
Semiconductor Group
7
Jul-30-1996
BUP 313
Package Outlines
Dimensions in mm
Weight:
Semiconductor Group
8
Jul-30-1996
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明