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BUY25CS12K-01 [INFINEON]

HiRel RadHard Power-MOS;
BUY25CS12K-01
型号： BUY25CS12K-01
厂家： Infineon    Infineon
描述：

HiRel RadHard Power-MOS
文件： 总8页 (文件大小：480K)
中文：  中文翻译
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Data Sheet  
HiRel RadHard Power-MOS  
BUY25CS12K-01  
Low RDS(on)  
Single Event Effect (SEE) hardened  
4
LET 85, Range: 118µm  
VGS = -10V, VDS = 250V  
VGS = -15V, VDS = 120V  
LET 55, Range: 90µm  
VGS = -15V, VDS = 250V  
VGS = -20V, VDS = 160V  
Total Ionisation Dose (TID) hardened  
100 kRad approved (Level R)  
1
Hermetically sealed  
N-channel  
2
3
Type  
Marking Pin Configuration  
Package  
1
2
3
4
BUY25CS12K-01  
BUY25CS12K-11  
-
-
D
S
G
Not connected TO-257AA  
Not connected TO-257AA  
G
D
S
Maximum Ratings  
Parameter  
Symbol  
VDS  
Values  
250  
Unit  
V
Drain Source Voltage  
Gate Source Voltage  
Drain Gate Voltage  
VGS  
+/- 20  
250  
V
VDG  
V
Continuous Drain Current  
TC = 25 °C  
TC = 100 °C  
ID  
A
12.4  
8
Continuous Source Current  
IS  
12.4  
A
Drain Current Pulsed, tp limited by Tjmax  
Total Power Dissipation 1)  
IDM  
Ptot  
TJ  
50  
Apk  
W
75  
Junction Temperature  
-55 to + 150  
-55 to + 150  
60  
°C  
°C  
mJ  
Operating and Storage Temperature  
Avalanche Energy  
Top  
EAS  
Thermal Characteristics  
Rth JC  
Tsol  
Thermal Resistance (Junction to Case)  
Soldering Temperature  
1.66  
250  
K/W  
°C  
Notes.:  
1) For T ≤ 25°C. For T > 25°C derating is required.  
S
S
IFAG PMM RFS D HIR  
1 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
Electrical Characteristics, at TA=25°C; unless otherwise specified  
Parameter  
Symbol  
Values  
max.  
Unit  
min.  
DC Characteristics  
Breakdown Voltage Drain to Source  
ID = 0.25mA, VGS = 0V  
BVDSS  
VGS(th)  
IGSS  
250  
-
V
V
Gate Threshold Voltage  
ID = 1.0mA, VDS ≥ VGS  
2.0  
4.0  
Gate to Source Leakage Current  
VDS = 0V, VGS = +/- 20V  
-
-
-
-
+/-100 nA  
Drain Current  
VDS = 200V, VGS = 0V  
Drain Source On Resistance 1)  
VGS = 10V, ID = 8A  
Source Drain Diode, Forward Voltage 1), 2) VSD  
VGS = 0V, IS = 12.4A  
IDSS  
25  
µA  
Ω
rDS(ON)  
0.13  
1.2  
V
AC Characteristics  
Turn-on Delay Time  
VDD = 50% VDS, ID = 8A, RG = 4.7Ω  
td(ON)  
tr  
td(OFF)  
tf  
-
25  
25  
35  
20  
400  
1.9  
150  
6
ns  
ns  
ns  
ns  
ns  
nF  
pF  
pF  
Rise Time  
VDD = 50% VDS, ID = 8A, RG = 4.7Ω  
-
Turn-off Delay Time  
VDD = 50% VDS, ID = 8A, RG = 4.7Ω  
-
Fall Time  
VDD = 50% VDS, ID = 8A, RG = 4.7Ω  
-
Reverse Recovery Time  
VDD < 50% VDS, ID = 12.4A  
trr  
-
Common Source Input Capacitance  
VDS = 100V, VGS = 0V, f = 1.0MHz  
Ciss  
Coss  
Crss  
1.3  
90  
1
Common Source Output Capacitance  
VDS = 100V, VGS = 0V, f = 1.0MHz  
Common Source  
Reverse Transfer Capacitance  
VDS = 100V, VGS = 0V, f = 1.0MHz  
Total Gate Charge  
QG  
-
42  
nC  
VDD = 50% VDS, VGS = 10V, ID = 12.4A  
Notes.:  
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.  
2) Measured within 2.0 mm of case.  
IFAG PMM RFS D HIR  
2 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
Electrical Characteristics  
at TA=125°C; unless otherwise specified  
Parameter  
Symbol  
Values  
max.  
Unit  
min.  
DC Characteristics  
Gate Threshold Voltage  
ID = 1.0mA, VDS ≥ VGS  
VGS(th)  
IGSS  
1.5  
-
V
Gate to Source Leakage Current  
VDS = 0V, VGS = +/- 20V  
-
-
-
+/-200 nA  
Drain Current  
VDS = 200V, VGS = 0V  
Drain Source On Resistance 1)  
VGS = 10V, ID = 8A  
IDSS  
250  
0.3  
µA  
rDS(ON)  
Ω
Notes.:  
1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%.  
Electrical Characteristics  
at TA=-55°C; unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
min.  
-
max.  
DC Characteristics  
Gate Threshold Voltage  
VGS(th)  
5.0  
V
ID = 1.0mA, VDS ≥ VGS  
IFAG PMM RFS D HIR  
3 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
1 Safe operating area  
ID = f(VDS); TC = 25°C  
parameter: tp  
2 Max. transient thermal impedance  
ZthJC = f(tp)  
parameter: D = tp/T  
IFAG PMM RFS D HIR  
4 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
3 Typ. output characteristics  
4 Typ. output characteristics  
ID = f(VDS); Tj = 25 °C  
parameter: VGS  
ID = f(VDS); Tj = 150 °C  
parameter: VG  
5 Typ. drain-source on-state  
resistance  
6 Typ. drain-source on-state  
resistance  
RDS(on) = f(ID); Tj = 150 °C  
parameter: VGS  
RDS(on) = f(Tj)  
ID=8A  
IFAG PMM RFS D HIR  
5 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
7 Typ. transfer characteristics  
8 Typ. gate threshold voltage  
ID = f(VGS); |VDS| > 2 |ID| RDS(on)max  
parameter: Tj  
ID=f(Tj)  
ID = 1mA  
9 Typ. forward characteristics of  
reverse diode  
10 Typ. drain-source breakdown  
voltage  
IF = f(VSD  
parameter: Tj  
)
BVDSS = f(Tj)  
ID = 250µA  
IFAG PMM RFS D HIR  
6 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
11 Typ. capacitances  
12 Typ. gate charge  
C = f(VDS); VGS = 0 V; f = 1 MHz  
VGS = f(Qgate); ID = 12.4 A pulsed  
parameter: VDD  
IFAG PMM RFS D HIR  
7 of 8  
March 2015  
Data Sheet  
BUY25CS12K-01  
TO-257AA Package  
5.1  
10.6  
3.6  
1.0  
Edition 2015-03  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© Infineon Technologies AG 2015  
All Rights Reserved.  
1 2 3  
0.8  
[2.54]  
[2.54]  
3.0  
Dimensions are typical [mm]  
Caution  
This package contains beryllia. Therefore it must not be in any form machined, grinded,  
sanded, polished or any other mechanical operation which will produce dust and particles.  
Attention please!  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or  
hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation warranties of non-infringement of intellectual  
property rights of a third party.  
Information  
For further information on technology, delivery terms and conditions and prices please  
contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For  
information on the types in question please contact your nearest Infineon Technologies  
Office.  
Infineon Technologies Components may only be used in life-support devices or systems with  
the expressed written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system, or to affect  
the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body, or to  
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to  
assume that the health of the user or other persons may be endangered.  
IFAG PMM RFS D HIR  
8 of 8  
March 2015  

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