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BUZ103SL-4 [INFINEON]

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated); SIPMOS功率晶体管（四沟道增强模式的逻辑电平雪崩额定的dv / dt评分）
BUZ103SL-4
型号： BUZ103SL-4
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
SIPMOS功率晶体管（四沟道增强模式的逻辑电平雪崩额定的dv / dt评分）

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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BUZ 103SL-4  
Preliminary data  
®
SIPMOS Power Transistor  
• Quad-channel  
• Enhancement mode  
• Logic level  
• Avalanche-rated  
• dv/dt rated  
Type  
V
I
R
Package  
P-DSO-28  
Ordering Code  
DS  
D
DS(on)  
Ω
BUZ 103SL-4 55 V  
4.8 A  
0.055  
C67078-S. . . .- . .  
Maximum Ratings  
Parameter  
Symbol  
Values  
4.8  
Unit  
Continuous drain current one channel active  
I
A
D
T = 25 °C  
A
Pulsed drain current one channel active  
I
Dpuls  
T = 25 °C  
19.2  
A
Avalanche energy, single pulse  
E
mJ  
AS  
I = 4.8 A, V = 25 V, R = 25 Ω  
D
DD  
GS  
L = 12 mH, T = 25 °C  
140  
j
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 4.8 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
±
Gate source voltage  
Power dissipation ,one channel active  
V
P
14  
V
GS  
W
tot  
T = 25 °C  
2.4  
A
Operating temperature  
T
-55 ... + 175 °C  
-55 ... + 175  
j
Storage temperature  
T
stg  
IEC climatic category, DIN IEC 68-1  
55 / 175 / 56  
Semiconductor Group  
1
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
Thermal Characteristics  
Parameter  
Symbol  
Values  
min. typ.  
Unit  
max.  
1)  
Thermal resistance, junction - soldering point  
R
R
-
-
tbd  
-
-
K/W  
thJS  
2)  
Thermal resistance, junction - ambient  
62.5  
thJA  
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for  
Drain connection. PCB is vertical without blown air.  
2) one channel active  
Electrical Characteristics,  
Parameter  
= 25°C, unless otherwise specified  
at T  
j
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 °C  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
55  
-
-
GS  
D
j
Gate threshold voltage  
=V  
I = 50 µA  
V
1.2  
1.6  
2
GS DS, D  
Zero gate voltage drain current  
I
µA  
V
V
V
= 55 V, V  
= 55 V, V  
= 55 V, V  
= 0 V, T = -40 °C  
-
-
-
-
0.1  
1
DS  
DS  
DS  
GS  
GS  
GS  
j
= 0 V, T = 25 °C  
0.1  
-
j
= 0 V, T = 150 °C  
100  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
-
-
10  
100  
GS  
DS  
Ω
Drain-Source on-resistance  
= 5 V, I = 4.8 A  
R
DS(on)  
V
0.0403  
0.055  
GS  
D
Semiconductor Group  
2
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
Electrical Characteristics,  
Parameter  
= 25°C, unless otherwise specified  
at T  
j
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
2 I  
R I = 0 A  
tbd  
-
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
960  
iss  
oss  
V
-
-
-
770  
230  
130  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
290  
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
165  
GS  
DS  
Turn-on delay time  
= 30 V, V = 5 V, I = 4.8 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
R = 6.5 Ω  
-
-
-
50  
30  
20  
75  
45  
30  
G
Rise time  
r
V
= 30 V, V = 5 V, I = 4.8 A  
GS D  
DD  
R = 6.5 Ω  
G
Turn-off delay time  
= 30 V, V = 5 V, I = 4.8 A  
d(off)  
V
DD  
GS  
D
R = 6.5 Ω  
G
Fall time  
f
V
= 30 V, V = 5 V, I = 4.8 A  
GS D  
DD  
R = 6.5 Ω  
-
-
-
-
-
40  
60  
nC  
2
G
Gate charge at threshold  
Q
Q
Q
g(th)  
≥
V
= 40 V, I  
0.1 A, V =0 to 1 V  
GS  
1.33  
20  
DD  
D
Gate charge at 5.0 V  
= 40 V, I = 4.8 A, V =0 to 5 V  
g(5)  
V
30  
DD  
D
GS  
Gate charge total  
= 40 V, I = 4.8 A, V =0 to 10 V  
g(total)  
V
32.6  
2.94  
50  
DD  
D
GS  
Gate plateau voltage  
= 40 V, I = 28 A  
V
V
(plateau)  
V
-
DD  
D
Semiconductor Group  
3
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
-
-
4.8  
A
Inverse diode direct current, pulsed  
I
SM  
T = 25 °C  
-
19.2  
V
A
Inverse diode forward voltage  
V
SD  
V
= 0 V, I = 9.6 A  
0.9  
55  
93  
1.6  
GS  
F
Reverse recovery time  
V = 30 V, I =l di /dt = 100 A/µs  
t
ns  
rr  
85  
R
F S,  
F
Reverse recovery charge  
V = 30 V, I =l di /dt = 100 A/µs  
Q
nC  
140  
rr  
R
F S,  
F
Semiconductor Group  
4
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
Power dissipation  
Drain current  
ƒ
ƒ
T
D = (  
P
T
I
tot = (  
)
)
A
A
≥
V
parameter:  
5 V  
GS  
5.0  
A
2.8  
W
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
4.0  
ID  
Ptot  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.2  
0.0  
0.0  
0
0
20 40 60 80 100 120 140 °C 180  
TA  
20 40 60 80 100 120 140 °C 180  
TA  
Safe operating area  
Transient thermal impedance  
ƒ
ƒ
t
I
V
Z
th JA = ( p)  
D = (  
)
DS  
D
, T  
D = t  
T
/
p
parameter: = 0 C = 25°C  
parameter:  
I
10 2  
10 2  
K/W  
V
10 1  
A
t
= 1.4ms  
R
p
ID  
ZthJC  
10 1  
10 0  
10 ms  
10 -1  
10 -2  
10 -3  
10 -4  
10 -5  
10 -6  
10 0  
10 -1  
10 -2  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
DC  
single pulse  
10 0  
10 1  
V 10 2  
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
VDS  
Semiconductor Group  
5
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
Typ. drain-source on-resistance  
ƒ(  
Typ. output characteristics  
ƒ(  
RDS (on)  
ID  
)
=
ID  
VDS  
)
=
t
T
parameter: p = 80 µs, j = 25 °C  
t
parameter: p = 80 µs  
0.17  
11  
P
tot = 2W  
a
b
l
k
Ω
h
e
g
A
9
8
7
6
5
4
3
2
d
V
[V]  
0.14  
GS  
a
RDS (on)  
ID  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
7.0  
8.0  
10.0  
b
c
d
e
f
0.12  
0.10  
0.08  
0.06  
0.04  
g
h
i
c
c
j
d
f
k
l
e
g
h
i
j
V
[V] =  
b
GS  
a
0.02  
0.00  
c
d
e
f
g
h
i
j
1
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0  
b
a
0
2
4
6
8
A
ID  
11  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
VDS  
5.0  
I
f V  
Typ. transfer characteristics D = (  
)
GS  
t
parameter: = 80 µs  
p
V
I
R
≥2 x  
x
DS  
D
DS(on)max  
90  
A
ID  
70  
60  
50  
40  
30  
20  
10  
0
0
1
2
3
4
5
6
7
8
V
VGS  
10  
Semiconductor Group  
6
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
Drain-source on-resistance  
Gate threshold voltage  
ƒ
ƒ
T
GS (th) = ( )  
j
R
T
V
DS (on) = ( )  
j
I
V
V
V I  
, D = 50 µA  
DS  
parameter: D = 4.8 A, GS = 5 V  
parameter:  
=
GS  
0.15  
4.6  
V
Ω
0.13  
RDS (on)0.12  
0.11  
4.0  
VGS(th)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.10  
0.09  
0.08  
98%  
98%  
typ  
0.07  
0.06  
typ  
0.05  
0.04  
0.03  
0.02  
2%  
0.01  
0.00  
0.0  
-60  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
-20  
20  
60  
100  
°C  
Tj  
180  
Typ. capacitances  
C f V  
Forward characteristics of reverse diode  
ƒ
= (  
)
I
V
F = (  
)
DS  
SD  
T , t  
parameter:  
p = 80 µs  
V
f
= 0V, = 1MHz  
parameter:  
j
GS  
10 4  
10 3  
A
C
IF  
pF  
10 2  
10 3  
Ciss  
10 1  
T
T
T
T
j = 25 °C typ  
j = 175 °C typ  
j = 25 °C (98%)  
j = 175 °C (98%)  
Coss  
Crss  
10 2  
0
10 0  
0.0  
5
10  
15  
20  
25  
30  
V
40  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
VSD  
3.0  
VDS  
Semiconductor Group  
7
05/Sep/1997  
BUZ 103SL-4  
Preliminary data  
ƒ
Avalanche energy E  
T
Typ. gate charge  
AS = ( )  
j
ƒ
V Q  
GS = (  
Gate  
I
V
parameter: D = 4.8 A, DD = 25 V  
)
Ω
,
R
L
I
GS = 25  
= 12 mH  
parameter: D puls = 5 A  
16  
V
150  
mJ  
130  
EAS 120  
110  
100  
90  
VGS  
12  
10  
8
80  
70  
60  
V
V
DS max  
0,2  
0,8  
DS max  
6
4
50  
40  
30  
20  
2
0
10  
0
20  
40  
60  
80 100 120 140 °C 180  
Tj  
0
5
10 15 20 25 30 35 40 nC 50  
QGate  
Drain-source breakdown voltage  
ƒ
V
T
(BR)DSS = ( )  
j
65  
V
V(BR)DSS  
61  
59  
57  
55  
53  
51  
49  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Semiconductor Group  
8
05/Sep/1997  

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