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BUZ345C67078-S3121-A2 [INFINEON]

TRANSISTOR MOSFET TO 247 ; 晶体管MOSFET TO 247\n
BUZ345C67078-S3121-A2
型号： BUZ345C67078-S3121-A2
厂家： Infineon    Infineon
描述：

TRANSISTOR MOSFET TO 247
晶体管MOSFET TO 247\n

晶体 晶体管
文件： 总8页 (文件大小：96K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BUZ 345  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Ordering Code  
V
I
R
DS(on)  
DS  
D
BUZ 345  
100 V  
41 A  
0.045  
Ω
TO-218 AA  
C67078-S3121-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 28 ˚C  
41  
C
Pulsed drain current  
Dpuls  
T = 25 ˚C  
164  
41  
C
Avalanche current,limited by T  
jmax  
AR  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
E
18  
mJ  
jmax  
AR  
AS  
I = 41 A, V  
= 25 V, R  
= 25 Ω  
GS  
D
DD  
L = 249.9 µH, T = 25 ˚C  
280  
j
Gate source voltage  
Power dissipation  
V
P
±
20  
V
GS  
tot  
W
T = 25 ˚C  
150  
C
Operating temperature  
Storage temperature  
T
T
-55 ... + 150  
-55 ... + 150  
˚C  
j
stg  
Thermal resistance, chip case  
R
R
≤
0.83  
75  
K/W  
thJC  
thJA  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
E
55 / 150 / 56  
Data Sheet  
1
05.99  
BUZ 345  
Electrical Characteristics,  
Parameter  
at T = 25˚C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 ˚C  
V
V
V
(BR)DSS  
GS(th)  
V
100  
2.1  
-
-
GS  
D
j
Gate threshold voltage  
=V I = 1 mA  
V
3
4
GS DS, D  
Zero gate voltage drain current  
I
µA  
DSS  
V
V
= 100 V, V  
= 100 V, V  
= 0 V, T = 25 ˚C  
-
0.1  
10  
1
DS  
DS  
GS  
GS  
j
= 0 V, T = 125 ˚C  
-
-
-
100  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
10  
100  
GS  
DS  
Drain-Source on-resistance  
= 10 V, I = 26 A  
R
Ω
DS(on)  
V
0.04  
0.045  
GS  
D
Data Sheet  
2
05.99  
BUZ 345  
Electrical Characteristics, at T = 25˚C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
V
≥
2 I  
R I = 26 A  
10  
20  
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
V
-
-
-
1800  
560  
270  
2700  
840  
400  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
rss  
V
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
DS  
Turn-on delay time  
t
ns  
d(on)  
V
= 30 V, V  
= 10 V, I = 3 A  
D
DD  
GS  
R
= 50  
Ω
-
-
-
-
30  
45  
GS  
Rise time  
= 30 V, V  
t
r
V
= 10 V, I = 3 A  
D
DD  
GS  
R
= 50  
Ω
110  
300  
150  
165  
390  
195  
GS  
Turn-off delay time  
t
d(off)  
V
= 30 V, V  
= 10 V, I = 3 A  
D
DD  
GS  
R
= 50 Ω  
GS  
Fall time  
= 30 V, V  
t
f
V
= 10 V, I = 3 A  
D
DD  
GS  
R
= 50  
Ω
GS  
Data Sheet  
3
05.99  
BUZ 345  
Electrical Characteristics,  
Parameter  
at T = 25˚C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Reverse Diode  
Inverse diode continuous forward current  
I
A
S
T = 25 ˚C  
-
-
-
-
-
-
41  
164  
1.8  
-
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 ˚C  
-
C
Inverse diode forward voltage  
V
V
SD  
V
= 0 V, I = 82 A  
1.6  
120  
0.6  
GS  
F
Reverse recovery time  
V = 30 V, I =l di /dt = 100 A/µs  
t
ns  
µC  
rr  
R
F S,  
F
Reverse recovery charge  
Q
rr  
V = 30 V, I =l di /dt = 100 A/µs  
-
R
F S,  
F
Data Sheet  
4
05.99  
BUZ 345  
Drain current  
Power dissipation  
ƒ
ID = (TC)  
ƒ
Ptot = (TC)  
≥
parameter: VGS 10 V  
45  
A
160  
W
ID  
Ptot  
120  
35  
30  
25  
20  
15  
10  
100  
80  
60  
40  
20  
5
0
0
0
0
20  
40  
60  
80 100 120 ˚C  
160  
20  
40  
60  
80 100 120 ˚C  
TC  
160  
TC  
Safe operating area  
Transient thermal impedance  
ƒ
ƒ
ID = (VDS  
)
Zth JC = (tp)  
parameter: D = 0.01, TC = 25˚C  
parameter: D = tp / T  
10 3  
10 0  
A
K/W  
ID  
ZthJC  
t
= 7.4µs  
10 µs  
p
10 2  
10 -1  
I
100 µs  
V
1 ms  
R
D = 0.50  
0.20  
10 ms  
10 1  
10 -2  
0.10  
0.05  
0.02  
single pulse  
0.01  
DC  
V 10 2  
10 0  
10 -3  
10 0  
10 1  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
VDS  
tp  
Data Sheet  
5
05.99  
BUZ 345  
Typ. output characteristics  
Typ. drain-source on-resistance  
ƒ(  
ƒ(  
ID)  
ID = VDS  
)
RDS (on)  
=
parameter: tp = 80 µs  
parameter: VGS  
100  
0.14  
Ptot = 150W  
a
b
c
d
e
f
g
Ω
A
l
k
j
0.12  
V
[V]  
GS  
a
i
80  
ID  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
9.0  
RDS (on)  
0.11  
b
c
d
e
f
0.10  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
70  
60  
50  
40  
30  
20  
h
g
g
h
i
f
h
e
j
i
k
l
10.0  
20.0  
j
d
c
a
0.02  
V
[V] =  
b
GS  
a
10  
0
c
d
e
f
g
h
i
j
b
0.01  
0.00  
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0  
0
1
2
3
4
5
6
7
8
V
10  
0
10 20 30 40 50 60 70  
A
90  
VDS  
ID  
Typ. transfer characteristics ID = f (VGS  
)
Typ. forward transconductance gfs = f (I )  
D
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
V
≥
2 x I x R  
V
≥
2 x I x R  
DS  
D
DS(on)max  
DS  
D
DS(on)max  
50  
A
24  
S
20  
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
ID  
gfs  
6
4
5
0
2
0
0
1
2
3
4
5
6
7
8
V
VGS  
10  
0
5
10 15 20 25 30 35  
A
ID  
45  
Data Sheet  
6
05.99  
BUZ 345  
Gate threshold voltage  
Drain-source on-resistance  
ƒ
VGS (th) = (Tj)  
ƒ
RDS (on) = (Tj)  
parameter: VGS = VDS, ID = 1 mA  
parameter: ID = 26 A, VGS = 10 V  
4.6  
0.14  
V
Ω
98%  
4.0  
0.12  
VGS(th)  
3.6  
RDS (on)  
0.11  
0.10  
0.09  
0.08  
0.07  
typ  
2%  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
98%  
typ  
0.06  
0.05  
0.04  
0.03  
0.02  
0.4  
0.0  
0.01  
0.00  
-60  
-20  
20  
60  
100  
˚C  
Tj  
160  
-60  
-20  
20  
60  
100  
˚C  
Tj  
160  
Typ. capacitances  
Forward characteristics of reverse diode  
C = f (V  
)
ƒ
IF = (VSD  
)
DS  
parameter:V  
= 0V, f = 1MHz  
parameter: Tj, tp = 80 µs  
GS  
10 1  
10 3  
nF  
A
IF  
C
Ciss  
10 0  
10 2  
Coss  
Crss  
10 -1  
10 1  
Tj = 25 ˚C typ  
Tj = 150 ˚C typ  
Tj = 25 ˚C (98%)  
Tj = 150 ˚C (98%)  
10 -2  
0
10 0  
0.0  
5
10  
15  
20  
25  
30  
V
40  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
3.0  
VDS  
VSD  
Data Sheet  
7
05.99  
BUZ 345  
ƒ
Avalanche energy  
Typ. gate charge  
EAS = (Tj)  
ƒ
parameter: ID = 41 A, VDD = 25 V  
VGS = (QGate  
)
Ω
RGS = 25 , L = 249.9 µH  
parameter: ID puls = 62 A  
16  
V
300  
mJ  
260  
EAS 240  
220  
VGS  
12  
V
V
DS max  
0,2  
0,8  
200  
DS max  
10  
8
180  
160  
140  
120  
6
100  
80  
4
60  
40  
2
0
20  
0
20  
40  
60  
80  
100  
120  
˚C  
Tj  
160  
0
20  
40  
60  
80  
100 nC 130  
QGate  
Drain-source breakdown voltage  
ƒ
V(BR)DSS = (Tj)  
120  
V
116  
V(BR)DSS114  
112  
110  
108  
106  
104  
102  
100  
98  
96  
94  
92  
90  
-60  
-20  
20  
60  
100  
˚C  
Tj  
160  
Data Sheet  
8
05.99  

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