BUZ350 [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated); SIPMOS大功率晶体管(N沟道增强型雪崩额定)型号: | BUZ350 |
厂家: | Infineon |
描述: | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
文件: | 总9页 (文件大小:245K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUZ 350
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
R
)
DS(on
Package
Ordering Code
D
BUZ 350
200 V
22 A
0.12 Ω
TO-218 AA
C67078-S3117-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
I
I
A
D
T = 33 °C
C
22
Pulsed drain current
Dpuls
AR
T = 25 °C
C
88
22
12
Avalanche current,limited by T
jmax
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
E
mJ
jmax
AR
AS
E
I = 22 A, V = 50 V, R = 25 Ω
D
DD
GS
L = 1.39 mH, T = 25 °C
450
j
±
Gate source voltage
Power dissipation
V
P
20
V
GS
W
tot
T = 25 °C
C
125
Operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Thermal resistance, chip case
R
≤ 1
K/W
thJC
thJA
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 350
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
GS
= 0 V, I = 0.25 mA, T = 25 °C
200
2.1
-
-
D
j
Gate threshold voltage
=
V
V
I = 1 mA
3
4
GS DS, D
Zero gate voltage drain current
I
I
µA
V
DS
V
DS
= 200 V, V = 0 V, T = 25 °C
-
-
0.1
10
1
GS
j
= 200 V, V = 0 V, T = 125 °C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
nA
GSS
V
GS
-
-
10
100
DS
Drain-Source on-resistance
= 10 V, I = 14 A
R
Ω
DS(on)
V
GS
0.09
0.12
D
Semiconductor Group
2
07/96
BUZ 350
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = 14 A
9
-
15
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
oss
V
1400
280
130
1900
400
200
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
V
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
-
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 3 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
GS
= 50
-
-
-
-
30
45
Rise time
= 30 V, V = 10 V, I = 3 A
r
V
DD
GS
D
Ω
R
GS
= 50
70
110
320
120
Turn-off delay time
= 30 V, V = 10 V, I = 3 A
d(off)
V
DD
GS
D
Ω
R
GS
= 50
250
90
Fall time
= 30 V, V = 10 V, I = 3 A
f
V
DD
GS
D
Ω
= 50
R
GS
Semiconductor Group
3
07/96
BUZ 350
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-
-
22
88
1.7
-
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
-
Inverse diode forward voltage
V
SD
V
V
GS
= 0 V, I = 44 A
1.2
180
1.2
F
Reverse recovery time
V = 100 V, I =l di /dt = 100 A/µs
t
ns
µC
rr
R
F S,
F
Reverse recovery charge
Q
rr
=
V = 100 V, I l di /dt = 100 A/µs
R
-
F S,
F
Semiconductor Group
4
07/96
BUZ 350
Drain current
Power dissipation
ƒ
I = (T )
ƒ
P
= (T )
D
C
tot
C
≥
parameter: V
10 V
GS
24
A
130
W
110
100
90
20
ID
Ptot
18
16
14
12
10
8
80
70
60
50
40
6
30
4
20
2
0
10
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
D
DS
p
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 3
10 1
K/W
A
10 0
ID
ZthJC
t
= 17.0µs
10 2
p
I
10 -1
10 -2
10 -3
V
100 µs
1 ms
R
10 1
D = 0.50
0.20
10 ms
0.10
0.05
10 0
0.02
single pulse
10 -4
DC
0.01
10 -1
10 -5
10 0
10 1
10 2
V
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
VDS
tp
5
07/96
Semiconductor Group
BUZ 350
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: V
p
GS
50
0.38
P
tot = 125W
l
j
a
b
c
d
e
f
i
k
h
Ω
g
A
40
35
30
25
20
15
10
f
V
[V]
0.32
GS
a
4.0
ID
RDS (on)
b
c
d
e
f
4.5
5.0
0.28
0.24
0.20
0.16
0.12
0.08
e
5.5
6.0
6.5
d
g
h
i
7.0
7.5
8.0
g
j
9.0
c
a
h
i
k
l
10.0
20.0
j
k
l
b
V
[V] =
b
GS
a
0.04
0.00
5
0
c
d
e
f
g
h
i
j
k
l
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0
2
4
6
8
V
12
0
5
10 15 20 25 30 35 40
A
50
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
D
GS
fs
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
≥
V
DS
2 x I x R
V
DS
2 x I x R
D
DS(on)max
D
DS(on)max
20
S
45
A
16
14
12
10
8
ID
gfs
35
30
25
20
15
10
6
4
5
0
2
0
0
1
2
3
4
5
6
7
8
V
10
0
5
10
15
20
25
30
A
40
VGS
ID
Semiconductor Group
6
07/96
BUZ 350
Gate threshold voltage
Drain-source on-resistance
ƒ
= (T )
j
V
ƒ
= (T )
j
R
GS (th)
DS (on)
parameter: V = V , I = 1 mA
parameter: I = 14 A, V = 10 V
GS
DS
D
D
GS
0.38
4.6
V
Ω
98%
4.0
0.32
VGS(th)
RDS (on)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.28
0.24
0.20
0.16
0.12
0.08
typ
2%
98%
typ
0.04
0.00
0.4
0.0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
C = f (V )
ƒ
I = (V
)
DS
F
SD
parameter:V = 0V, f = 1MHz
parameter: T , t = 80 µs
GS
j
p
10 2
10 2
nF
A
IF
C
Ciss
10 1
10 1
10 0
10 -1
Coss
10 0
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 -1
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
7
07/96
Semiconductor Group
BUZ 350
ƒ
Avalanche energy E = (T )
Typ. gate charge
AS
j
ƒ
parameter: I = 22 A, V = 50 V
V
= (Q
)
D
DD
GS
Gate
Ω
R
= 25 , L = 1.39 mH
parameter: I
= 33 A
D puls
GS
500
mJ
16
V
400
350
300
250
200
150
100
EAS
VGS
12
10
8
V
V
DS max
0,2
0,8
DS max
6
4
2
0
50
0
20
40
60
80
100
120
°C
Tj
160
0
10 20 30 40 50 60 70 80 nC 100
QGate
Drain-source breakdown voltage
ƒ
= (T )
j
V
(BR)DSS
240
V
230
V(BR)DSS
225
220
215
210
205
200
195
190
185
180
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
8
07/96
BUZ 350
Package Outlines
TO-218 AA
Dimension in mm
Semiconductor Group
9
07/96
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