BXY44-T2ES [INFINEON]

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2;
BXY44-T2ES
型号: BXY44-T2ES
厂家: Infineon    Infineon
描述:

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2

衰减器 开关 测试 二极管
文件: 总5页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BXY44  
HiRel Silicon PIN Diode  
HiRel Discrete and Microwave Semiconductor  
Current controlled RF resistor for RF  
attenuators and switches  
High reverse voltage  
Hermetically sealed microwave package  
esa Space Qualified  
ESA/SCC detail spec. N0.: 5513/030  
type variant No. s 04 to 07  
BXY44-T  
BXY44-T1  
BXY44-T2  
BXY44-FP  
1
1'  
1
2
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Package  
Configuration  
single  
Marking  
BXY44-FP  
BXY44-T (ql)  
BXY44-T1 (ql)  
BXY44-T2 (ql)  
FP  
T
-
-
-
-
single  
T1  
T2  
single  
single  
(ql) Testing level: P: Professional testing  
H: High Rel quality  
S: Space quality  
ES: ESA qualified  
2007-08-20  
1
BXY44  
Maximum Ratings  
Parameter  
Symbol  
Value  
200  
Unit  
V
Reverse voltage  
Forward current  
Total power dissipation  
BXY44-T;-T2,-FP  
BXY44-T1  
V
R
400  
mA  
mW  
I
F
1)  
500  
P
tot  
150  
°C  
Junction temperature  
T
T
T
T
j
Operating temperature range  
-55 ... 150  
235  
op  
sol  
stg  
2)  
Soldering temperature  
°C  
°C  
Storage temperature  
175 ... -65  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
Thermal resistance junction-case  
BXY44-FP  
R
K/W  
th(j-c)  
110  
110  
140  
110  
BXY44-T  
BXY44-T1  
BXY44-T2  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
-
-
-
100  
5
Reverse current  
I
nA  
R
V = 200 V  
R
Reverse current 1  
I
-
-
R1  
V
= 100 V  
R1  
1
1.05 V  
Forward voltage  
V
F
I = 100 mA  
F
1For BXY44-FP; -T; -T2: at T  
= 95°C. For T  
> 95°C derating is required.  
CASE  
CASE  
For BXY44-T1: at T  
= 80°C. For T  
> 80°C derating is required.  
CASE  
CASE  
2During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have elapsed.  
2007-08-20  
2
BXY44  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
pF  
Diode capacitance  
C
R
R
R
T
BXY44-T, -T1, -T2, V = 50 V, f = 1 MHz  
-
-
0.2  
0.5  
0.35  
0.75  
R
BXY44-FP, V = 50 V, f = 1 MHz  
R
Forward resistance 1  
F1  
F2  
F3  
BXY44-T, -T1, -T2, I = 10 µA, f = 100 MHz  
800  
700  
900  
900  
1300  
1200  
F1  
BXY44-FP, I = 10 µA, f = 100 MHz  
F1  
Forward resistance 2  
BXY44-T, -T1, -T2, I = 1 mA , f = 100 MHz  
12  
11  
16  
20  
28  
27  
F2  
BXY44-FP, I = 1 mA , f = 100 MHz  
F2  
Forward resistance 3  
BXY44-T, -T1, -T2, I = 10 mA , f = 100 MHz  
2
2
3
5
5
F3  
BXY44-FP, I = 10 mA, f = 100 MHz  
3.8  
F3  
Minority carrier lifetime  
τ
300  
800  
-
ns  
L
I = 10 mA, I = 6 mA, I = 3 mA  
F
R
R
2007-08-20  
3
BXY44  
Package FP  
Package T  
Package T1  
Package T2  
2007-08-20  
4
BXY44  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-08-20  
5

相关型号:

BXY44-T2H

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44-T2P

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44-T2S

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44-TES

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44-TH

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44-TP

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44-TS

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2
INFINEON

BXY44K

Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic)
INFINEON

BXY44P

HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INFINEON

BXY44P-FP

HiRel Silicon PIN Diode (HiRel Discrete and Microwave Semiconductor Current controlled RF resistor for RF attenuators and switches)
INFINEON

BXY44P-FPES

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED, FP-4
INFINEON

BXY44P-FPH

Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED, FP-4
INFINEON