BXY44K [INFINEON]
Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic); 硅PIN二极管（微波二极管衰减器的线性RF特性）
| 型号： | BXY44K |
| 厂家： | 
Infineon |
| 描述： | Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic) |
| 文件： | 总2页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon PIN Diode
BXY 44K
● Microwave attenuator diode
● Linear RF characteristic
Package1)
Type
Marking
Ordering Code
Pin Configuration
BXY 44K
–
Q62702-X148
Cathode: black dot,
heat sink
T1
Maximum Ratings
Parameter
Symbol
Values
Unit
Reverse voltage
Forward current
Peak forward current, t
V
R
200
V
A
IF
0.5
p
=1 µs
IFRM
20
Total power dissipation
Junction temperature
P
tot
600
mW
˚C
T
T
T
j
175
Storage temperature range
Operating temperature range
stg
op
– 65 … + 150
– 65 … + 150
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
BXY 44K
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
–
Unit
min.
max.
Breakdown voltage
V
(BR)
F
200
–
V
I
R
= 10 µA
Forward voltage
= 100 mA
Reverse current
= 100 V
Storage time
= 10 mA, V
Diode capacitance
= 50 V, f = 1 MHz
V
–
–
–
–
–
1
IR
IR
–
10
–
nA
ns
pF
V
R
t
s
50
–
IF
R
= 10 V
C
T
0.4
V
R
Case capacitance
C
C
–
–
0.1
0.5
–
–
τL
Charge carrier life time
µs
IF
= 10 mA, I
R
= 6 mA
Forward resistance
rf
Ω
f= 100 MHz, I
f= 100 MHz, I
f= 100 MHz, I
F
F
F
= 10 µA
= 1 mA
= 10 mA
–
–
–
1000
25
3.5
–
–
–
Semiconductor Group
2
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