CFY67-08 [INFINEON]
HiRel K-Band GaAs Super Low Noise HEMT; HiRel它K波段砷化镓超低噪声HEMT
| 型号： | CFY67-08 |
| 厂家： | 
Infineon |
| 描述： | HiRel K-Band GaAs Super Low Noise HEMT |
| 文件： | 总9页 (文件大小：695K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CFY67
HiRel K-Band GaAs Super Low Nois e HEMT
• HiRel Dis crete and Microwave Semiconductor
• Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
• For professional super low-noise amplifiers
• For frequencies from 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figure, high associated gain
4
1
3
2
•
Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
ESD: Electros tatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code Pin Configuration
Package
1
2
3
4
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
-
see below
G
S
D
S
Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
ES: ESA Space Quality,
Q62702F1699
(see order instructions for ordering example)
S e miconductor Group
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CFY67
Maximum Ratings
Parameter
Symbol
VDS
VDG
VGS
ID
Values
Unit
V
Drain-source voltage
Drain-gate voltage
3.5
4.5
V
Gate-source voltage (reverse / forward)
Drain current
- 3... + 0.5
V
60
mA
mA
dBm
°C
Gate forward current
IG
2
1)
PRF,in
TJ
+ 10
RF Input Power, C- and X-Band
Junction temperature
150
Storage temperature range
Tstg
Ptot
- 65... + 150
200
°C
2)
mW
°C
Total power dissipation
3)
Tsol
230
Soldering temperature
Thermal Res is tance
Junction-soldering point
Rth JS
K/W
≤ 515 (tbc.)
Notes .:
1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
S e miconductor Group
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Electrical Characteris tics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteris tics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
15
0.2
-
30
60
2.0
-
mA
V
Gate threshold voltage
VDS = 2 V, ID = 1 mA
-VGth
0.7
< 50
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
IDp
µA
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
-IGp
-
< 50
65
200
µA
Transconductance
gm15
-IG15
Rth JS
50
-
-
mS
µA
VDS = 2 V, ID = 15 mA
Gate leakage current at operation
VDS = 2 V, ID = 15 mA
< 0.5
450
2
-
Thermal resistance
-
K/W
junction to soldering point
S e miconductor Group
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Electrical Characteris tics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteris tics
1)
NF
dB
Noise figure
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
-
-
-
0.5
0.7
0.9
0.6
0.8
1.0
CFY67-08, -08P
CFY67-10, 10P
1)
Ga
dB
Associated gain.
VDS = 2 V, ID = 15 mA, f = 12 GHz
CFY67-06
11.5
11.0
10.5
12.5
11.5
11.0
-
-
-
CFY67-08, -08P
CFY67-10, 10P
2)
P1dB
dBm
Output power at 1 dB gain compression
VDS = 2 V, ID = 20 mA, f = 12 GHz
CFY67-06, -08, -10
CFY67-08P, -10P
Notes .:
-
11.0
11.0
-
-
10.0
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
S e miconductor Group
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Typical Common Source S-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
|S 11| <S 11 |S 21| <S 21 |S 12| <S 12 |S 22| <S 22 k-Fa ct. S 21/S 12 MAG
f
[GHz] [ma gn] [a ngle ] [ma gn] [a ngle ] [ma gn] [a ngle ] [ma gn] [a ngle ] [ma gn] [dB]
[dB]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
0,963
0,938
0,913
0,889
0,865
0,844
0,823
0,800
0,779
0,761 -100 4,183
0,743 -109 4,043
0,725 -117 3,906
0,708 -125 3,769
0,690 -132 3,640
0,673 -139 3,529
0,656 -146 3,427
0,640 -153 3,344
0,625 -160 3,271
0,611 -168 3,202
-15
-23
-33
-42
-52
-62
-72
-81
-91
5,315
5,182
5,060
4,940
4,824
4,715
4,591
4,450
4,319
165 0,0111
159 0,0225
150 0,0317
142 0,0411
133 0,0509
124 0,0585
115 0,0650
107 0,0714
74
68
62
57
53
46
41
36
31
25
20
15
11
7
0,655
0,639
0,625
0,611
0,596
0,582
0,567
0,552
0,534
0,520
0,500
0,490
0,477
0,467
0,455
0,442
0,430 -101
0,417 -104
0,406 -108
0,393 -113
0,381 -118
0,370 -123
0,358 -129
0,351 -134
0,343 -140
0,336 -146
0,330 -151
0,325 -156
0,320 -161
0,315 -167
0,311 -172
0,305 -177
-14
-18
-23
-28
-35
-41
-47
-53
-60
-66
-72
-77
-83
-88
-93
-97
0,40
0,39
0,42
0,43
0,43
0,45
0,47
0,50
0,52
0,54
0,58
0,60
0,63
0,67
0,71
0,76
0,79
0,84
0,87
0,91
0,94
0,96
0,98
1,01
1,03
1,06
1,09
1,11
1,13
1,14
1,16
1,18
1,19
1,19
1,18
1,17
26,8
23,6
22,0
20,8
19,8
19,1
18,5
17,9
17,5
17,1
16,8
16,4
16,1
15,9
15,6
15,4
15,3
15,1
14,9
14,8
14,7
14,6
14,5
14,4
14,3
14,3
14,2
14,1
14,1
14,0
14,0
14,0
14,0
13,9
14,0
14,0
99
91
83
75
68
61
54
48
41
34
28
21
15
8
0,0768
0,0811
0,0850
0,0885
0,0917
0,0942
0,0962
0,0978
0,0998
0,1010
0,1027 -12
0,1033 -16
0,1044 -20
0,1056 -24
0,1068 -28
0,1070 -32
3
-1
-5
-9
10,0 0,597 -175 3,143
10,5 0,586
11,0 0,576
11,5 0,564
12,0 0,554
12,5 0,547
13,0 0,536
13,5 0,529
14,0 0,522
14,5 0,517
15,0 0,510
15,5 0,505
16,0 0,502
16,5 0,499
17,0 0,498
17,5 0,498
18,0 0,498
177
169
161
154
146
139
131
124
116
108
99
3,089
3,041
3,002
2,960
2,923
2,886
2,848
2,815
2,787
2,765
2,751
2,735
2,719
2,722
2,741
2,760
1
-5
13,8
13,3
12,7
12,4
12,1
11,9
11,7
11,6
11,4
11,3
11,3
11,4
11,5
-12 0,1076 -36
-19 0,1076 -41
-26 0,1081 -45
-33 0,1087 -50
-40 0,1087 -55
-46 0,1093 -60
-54 0,1090 -65
-61 0,1090 -71
-68 0,1091 -77
-75 0,1097 -82
-80 0,1103 -87
-84 0,1107 -90
91
82
74
68
0,301
0,297
0,294
0,290
177
172
168
165
62
S e miconductor Group
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Typical Common Source S-Parameters (continued)
CFY67-06: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
f
|S 11| <S 11 |S 21| <S 21 |S 12| <S 12 |S 22| <S 22 k-Fa ct. S 21/S 12 MAG
[GHz] [ma g] [a ng] [ma g] [a ng] [ma g] [a ng] [ma g] [a ng] [ma g] [dB]
[dB]
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
0,962
0,937
0,913
0,889
0,860
0,834
0,810
0,784
0,761
0,740
0,720 -107 4,586
0,701 -116 4,420
0,682 -124 4,260
0,663 -131 4,107
0,644 -139 3,974
0,627 -148 3,852
0,611 -157 3,747
0,595 -165 3,659
0,581 -173 3,571
-13
-22
-33
-41
-51
-61
-71
-80
-90
-99
6,112
5,956
5,810
5,690
5,522
5,386
5,236
5,067
4,911
4,752
166 0,0111
159 0,0211
150 0,0302
142 0,0394
133 0,0484
124 0,0567
116 0,0637
107 0,0702
76
69
64
58
53
48
43
38
33
28
24
19
15
11
7
0,539
0,525
0,511
0,498
0,484
0,469
0,456
0,440
0,423
0,410
0,397
0,385
0,373
0,362
0,351
0,343
0,333 -102
0,323 -107
0,313 -112
0,303 -116
0,293 -121
0,284 -127
0,274 -131
0,265 -135
0,255 -139
0,246 -143
0,235 -146
0,225 -150
0,215 -155
0,207 -159
0,200 -163
0,193 -167
0,187 -171
0,182 -175
0,177 -178
-15
-19
-24
-30
-36
-43
-49
-55
-61
-67
-73
-79
-84
-89
-93
-98
0,42
0,42
0,44
0,46
0,48
0,50
0,52
0,55
0,58
0,60
0,63
0,66
0,69
0,73
0,77
0,80
0,83
0,86
0,90
0,92
0,95
0,98
1,00
1,02
1,05
1,07
1,10
1,12
1,14
1,15
1,16
1,17
1,17
1,17
1,16
1,14
27,4
24,5
22,8
21,6
20,6
19,8
19,1
18,6
18,1
17,7
17,3
17,0
16,7
16,4
16,2
15,9
15,8
15,6
15,4
15,3
15,1
15,0
14,9
14,8
14,6
14,5
14,4
14,3
14,2
14,1
14,1
14,0
13,9
13,9
13,9
13,8
99
91
84
76
69
62
55
49
42
35
29
22
16
9
0,0760
0,0809
0,0851
0,0889
0,0918
0,0941
0,0962
0,0980
0,0995
0,1008
0,1022
0,1039 -13
0,1049 -17
0,1064 -21
0,1078 -26
0,1093 -30
3
-1
-5
-9
10,0 0,567
10,5 0,556
11,0 0,546
11,5 0,537
12,0 0,528
12,5 0,520
13,0 0,513
13,5 0,506
14,0 0,498
14,5 0,492
15,0 0,489
15,5 0,484
16,0 0,485
16,5 0,485
17,0 0,485
17,5 0,487
18,0 0,490
178
170
163
155
149
142
135
128
121
113
106
98
3,497
3,430
3,368
3,317
3,265
3,216
3,169
3,120
3,080
3,044
3,014
2,990
2,967
2,945
2,947
2,961
2,979
3
-4
13,8
13,3
12,9
12,5
12,2
12,0
11,8
11,6
11,5
11,4
11,4
11,5
11,6
-10 0,1105 -35
-17 0,1116 -39
-24 0,1126 -44
-30 0,1137 -49
-37 0,1151 -54
-44 0,1160 -59
-51 0,1171 -65
-58 0,1185 -71
-65 0,1197 -77
-71 0,1206 -82
-77 0,1215 -87
-81 0,1230 -90
91
83
75
69
64
0,174
179
S e miconductor Group
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Typical Common Source Nois e-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω
f
[GHz]
1
NFmin
[dB]
0,29
0,30
0,34
0,38
0,41
0,46
0,50
0,55
0,60
0,64
0,69
0,73
0,78
0,84
0,88
0,93
0,99
1,05
Rn
|Γopt
|
<Γopt
[ma gn] [a ngle ]
[Ω]
15,60
14,65
13,56
12,10
10,53
8,86
7,16
5,62
4,29
3,23
2,53
2,22
2,37
2,96
4,01
5,47
7,26
9,61
0,756
0,690
0,643
0,606
0,578
0,553
0,534
0,518
0,505
0,495
0,486
0,476
0,467
0,455
0,443
0,428
0,412
0,394
14
28
43
58
73
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
87
102
116
131
145
159
173
-173
-160
-146
-132
-118
-103
S e miconductor Group
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CFY67
Order Ins tructions :
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CFY67 -(nnl) (ql)
-(nnl)
Noise Figure/Gain and/or Power Level
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702F1698
CFY67-08P ES
For CFY67, Noise Figure/Gain/Power Level 08P:
NF < 0.8 dB, Ga > 11.0 dB, P1dB > 10 dBm @ 12 GHz
in ESA Space Quality Level
Further Informations :
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
++89 234 24480
Fax.:
++89 234 28438
e-mail:
Address:
martin.wimmers@infineon.com
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
S e miconductor Group
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CFY67
Micro-X Package
Publis hed by Infineon Technologies Semiconductors ,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Res erved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question
please
contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
S e miconductor Group
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