CLX32-00S [INFINEON]
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MWP-25, 3 PIN;
| 型号： | CLX32-00S |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MWP-25, 3 PIN |
| 文件： | 总9页 (文件大小：588K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CLX32
HiRel X-Band GaAs Power-MESFET
• HiRel Dis crete and Microwave Semiconductor
• For professional power amplifiers
• For frequencies from 500 MHz to 12.5 GHz
• Hermetically sealed microwave power package
• Low thermal resistance for
high voltage application
• Power added efficiency > 54 %
• Component Under Development,
Package Modifications Fores een
ESD: Electros tatic discharge sensitive device, observe handling precautions!
Type
Marking Ordering Code
Pin Configuration Package
1
2
3
CLX32-00 (ql)
CLX32-05 (ql)
CLX32-10 (ql)
-
see below
G
S
D
MWP-25
tbc.
CLX32-nn: specifies output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
on request
on request
on request
on request
ES: ESA Space Quality,
(see order instructions for ordering example)
S e miconductor Group
1 of 10
Dra ft D, S e pte mbe r 99
CLX32
Maximum Ratings
Parameter
Symbol
VDS
VDG
VGS
ID
Values
Unit
V
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
11
13
V
- 6
V
1400
mA
mA
dB
Gate forward current
Compression Level
IG
10
PC
1.5 at VDS ≤ 8 V
2.5 at VDS ≤ 7 V
3.5 at VDS ≤ 6 V
3.5 at VDS ≤ 6 V
1)
Operation Range 1
Compression Level
Operation Range 2
PC
PC
dB
dB
2)
3)
Compression Level
Operation Range 3
tbd.
Junction temperature
TJ
175
°C
°C
W
°C
Storage temperature range
Tstg
Ptot
Tsol
- 65...+ 175
5.4
4)
Total power dissipation
5)
230
Soldering temperature
Thermal Res is tance
Junction-soldering point
Rth JS
K/W
≤ 25
Notes .:
1) Operation Range 1: 270 mA ≤ ID ≤ 540 mA
2) Operation Range 2: ID > 540 mA
3) Operation Range 3: ID < 270 mA
4) At TS = + 40 °C. For TS > + 40 °C derating is required.
5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
S e miconductor Group
2 of 10
Dra ft D, S e pte mbe r 99
CLX32
Electrical Characteris tics (at TA=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteris tics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
IDss
600
1000
1400 mA
Gate threshold voltage
-VGth
1.2
2.2
3.2
200
80
V
VDS = 3 V, ID = 40 mA
Drain current at pinch-off, low VDS
VDS = 3 V, VGS = -3.5 V
IDp3
-
-
µA
µA
Gate current at pinch-off, low VDS
VDS = 3 V, VGS = -3.5 V
-IGp3
IDp9.5
-IGp9.5
gm
-
-
Drain current at pinch-off, high VDS
VDS = 9.5 V, VGS = -3.5 V
Gate current at pinch-off, high VDS
VDS = 9.5 V, VGS = -3.5 V
Transconductance
-
-
2000 µA
-
-
800
µA
440
-
520
20
-
-
mS
K/W
VDS = 3 V, ID = 400 mA
Thermal resistance
Rth JS
Junction to soldering point
VDS = 8 V, ID = 400 mA, Ts = +25°C
S e miconductor Group
3 of 10
Dra ft D, S e pte mbe r 99
CLX32
Electrical Characteris tics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteris tics
1)
Glp
dB
Linear power gain
VDS = 8 V, ID = 400 mA, f = 2.3 GHz,
Pin = 8 dBm
CLX32-00
CLX32-05
CLX32-10
15.0
15.5
15.5
16.0
16.5
16.5
-
-
-
1)
P1dB
dBm
Power output at 1dB gain compr.
VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz
CLX32-00
-
-
-
31.5
32.3
32.8
-
-
-
CLX32-05
CLX32-10
Output Power 1)
Pout
dBm
VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz,
Pin = 18.0 dBm
CLX32-00
31.0
32.0
32.5
31.5
32.3
32.8
-
-
-
CLX32-05
CLX32-10
Power added efficiency 1), 2)
PAE
%
VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz,
Pin = 18.0 dBm
CLX32-00
CLX32-05
CLX32-10
Notes .:
43
46
48
48
52
54
-
-
-
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (PRFout - PRFin) / PDC
S e miconductor Group
4 of 10
Dra ft D, S e pte mbe r 99
CLX32
Typical Common Source S-Parameters
VDS = 3 V, ID = 400 mA, Zo = 50 Ω
<S 21 |S 12| <S 12 |S 22|
[GHz] [ma gn] [a ngle ] [ma gn] [a ngle ] [ma gn] [a ngle ] [ma gn] [a ngle ] [ma gn]
f
|S 11|
<S 11
|S 21|
<S 22
k-Fa ct. S 2 1 /S 1 2
MAG
[dB]
[dB]
23,4
22,0
20,9
20,0
19,2
18,6
18,0
17,5
17,0
16,6
16,1
15,7
15,4
15,0
14,7
14,3
14,0
13,7
13,4
13,1
12,8
12,5
12,3
11,6
11,0
10,4
9,9
9,4
8,9
8,5
8,1
7,6
7,2
6,8
6,5
6,1
5,8
5,4
5,1
4,7
4,4
4,1
3,8
0,6
0,8
0,855
0,870
0,884
0,893
0,898
0,901
0,903
0,905
0,905
0,905
0,905
0,905
0,903
0,903
0,902
0,901
0,900
0,899
0,899
0,898
0,898
0,898
0,897
0,895
0,894
0,892
0,890
0,887
0,886
0,885
0,884
0,883
0,883
0,883
0,883
0,882
0,879
0,873
0,865
0,854
0,843
0,830
0,813
0,797
0,778
0,755
0,741
0,732
0,726
-113
-133
-147
-157
-165
-171
-177
179
175
171
168
164
161
158
155
153
150
148
146
144
142
140
138
133
129
124
120
115
110
104
99
5,877
4,829
3,969
3,328
2,851
2,489
2,207
1,980
1,794
1,642
1,514
1,408
1,325
1,256
1,196
1,140
1,081
1,029
0,990
0,946
0,910
0,875
0,840
0,775
0,717
0,667
0,629
0,597
0,570
0,546
0,524
0,505
0,486
0,470
0,456
0,445
0,437
0,433
0,432
0,434
0,440
0,449
0,456
0,475
0,497
0,521
0,547
0,573
0,597
123
108
98
0,0270
0,0305
0,0324
0,0334
0,0340
0,0345
0,0350
0,0354
0,0357
0,0363
0,0368
0,0375
0,0386
0,0399
0,0408
0,0420
0,0431
0,0442
0,0452
0,0465
0,0479
0,0490
0,0500
0,0536
0,0568
0,0604
0,0645
0,0687
0,0730
0,0775
0,0821
0,0868
0,0918
0,0972
0,1026
0,1085
0,1161
0,1244
0,1347
0,1459
0,1592
0,1741
0,1895
0,2105
0,2341
0,2607
0,2872
0,3115
0,3333
35
29
24
21
18
17
16
14
13
13
12
12
12
11
10
10
9
0,723
0,734
0,746
0,753
0,759
0,762
0,764
0,766
0,767
0,768
0,768
0,769
0,770
0,770
0,770
0,770
0,771
0,772
0,772
0,773
0,773
0,774
0,775
0,776
0,777
0,777
0,777
0,776
0,775
0,774
0,775
0,778
0,782
0,788
0,791
0,793
0,794
0,792
0,787
0,777
0,769
0,758
0,744
0,725
0,705
0,682
0,663
0,646
0,632
179
176
173
170
167
164
162
160
158
156
154
152
150
148
146
144
143
141
139
138
136
135
133
129
125
121
116
112
107
102
97
0,50
0,50
0,52
0,56
0,62
0,68
0,73
0,78
0,84
0,89
0,96
1,02
1,06
1,10
1,13
1,15
1,18
1,21
1,23
1,25
1,26
1,28
1,30
1,32
1,35
1,38
1,39
1,41
1,41
1,40
1,40
1,38
1,35
1,31
1,28
1,24
1,21
1,20
1,20
1,21
1,19
1,19
1,21
1,20
1,18
1,16
1,13
1,08
1,07
1,0
1,2
91
1,4
86
1,6
81
1,8
77
2,0
72
2,2
68
2,4
65
2,6
62
2,8
59
14,9
13,8
13,1
12,4
12,0
11,4
10,9
10,5
10,1
9,7
9,3
8,9
8,2
7,5
6,8
6,1
5,6
5,1
4,7
4,3
4,0
3,7
3,5
3,3
3,1
3,0
2,7
2,4
2,0
1,7
1,5
1,0
0,8
0,7
0,6
0,6
0,9
0,9
3,0
55
3,2
52
3,4
49
3,6
46
3,8
43
4,0
40
9
4,2
37
8
4,4
34
7
4,6
31
7
4,8
29
6
5,0
26
5
5,5
19
4
6,0
12
2
6,5
6
0
7,0
0
-3
7,5
-7
-6
8,0
8,5
9,0
9,5
-13
-20
-26
-33
-39
-45
-51
-57
-62
-67
-73
-78
-84
-89
-95
-101
-107
-113
-119
-124
-128
-9
-13
-17
-21
-25
-29
-33
-37
-41
-45
-49
-53
-58
-63
-69
-74
-80
-86
-92
-97
-101
93
88
82
77
72
67
63
58
52
47
41
35
29
22
15
9
91
86
81
77
73
69
65
61
57
52
48
42
37
32
27
21
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
3,5
3,3
3,0
2,8
2,6
2,5
3
-3
16
11
S e miconductor Group
5 of 10
Dra ft D, S e pte mbe r 99
CLX32
Typical Common Source S-Parameters (continued)
VDS = 5 V, ID = 400 mA, Zo = 50 Ω
f
|S 11|
<S 11
|S 21|
<S 21
|S 12|
<S 12
|S 22|
<S 22
k-Fa ct. S 2 1 /S 1 2
MAG
[dB]
[GHz]
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
2,8
3,0
[ma g]
0,830
0,856
0,877
0,887
0,892
0,894
0,896
0,897
0,897
0,897
0,897
0,897
0,897
[a ng]
-110
-131
-145
-155
-163
-170
-175
-180
176
[ma g]
7,697
6,353
5,237
4,397
3,767
3,288
2,913
2,611
2,364
2,163
1,992
1,852
1,729
[a ng]
123
108
98
90
83
78
73
68
64
[ma g]
0,0238
0,0270
0,0289
0,0299
0,0303
0,0306
0,0309
0,0311
0,0314
0,0319
0,0325
0,0331
0,0336
[a ng]
36
29
24
21
18
17
15
14
13
13
12
12
12
[ma g]
0,591
0,608
0,622
0,631
0,639
0,644
0,648
0,652
0,656
0,659
0,662
0,665
0,667
[a ng]
-178
179
176
173
170
167
165
163
161
159
157
156
154
[ma g]
0,62
0,57
0,55
0,59
0,64
0,70
0,76
0,83
0,89
0,95
1,01
1,06
1,11
[dB]
25,1
23,7
22,6
21,7
20,9
20,3
19,7
19,2
18,8
18,3
17,9
17,5
17,1
172
169
166
162
60
56
52
49
17,3
16,0
15,1
3,2
3,4
3,6
3,8
4,0
4,2
4,4
4,6
4,8
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
0,896
0,896
0,896
0,896
0,896
0,897
0,897
0,897
0,897
0,896
0,897
0,897
0,896
0,895
0,893
0,890
0,888
0,888
0,888
0,890
0,891
0,892
0,891
0,889
0,884
0,876
0,867
0,857
0,846
0,830
0,816
0,799
0,785
0,772
0,761
0,752
159
156
154
152
150
147
145
143
141
139
135
130
126
121
116
111
105
100
94
88
83
78
73
68
63
58
53
1,640
1,562
1,476
1,412
1,339
1,280
1,227
1,169
1,120
1,069
0,963
0,882
0,813
0,758
0,712
0,672
0,636
0,603
0,573
0,545
0,520
0,496
0,477
0,461
0,449
0,441
0,436
0,436
0,438
0,440
0,452
0,466
0,484
0,504
0,524
0,542
46
43
40
37
34
31
28
25
22
19
12
5
-2
0,0341
0,0347
0,0354
0,0362
0,0372
0,0379
0,0390
0,0398
0,0409
0,0421
0,0450
0,0482
0,0521
0,0568
0,0617
0,0669
0,0720
0,0769
0,0820
0,0877
0,0929
0,0990
0,1056
0,1127
0,1217
0,1316
0,1429
0,1563
0,1708
0,1882
0,2071
0,2305
0,2558
0,2821
0,3084
0,3311
11
11
11
11
10
10
10
9
9
9
8
7
0,670
0,672
0,675
0,677
0,681
0,683
0,685
0,688
0,690
0,693
0,699
0,704
0,709
0,713
0,716
0,719
0,722
0,728
0,737
0,747
0,759
0,769
0,777
0,781
0,783
0,783
0,781
0,778
0,772
0,763
0,750
0,736
0,719
0,704
0,691
0,680
152
151
149
148
146
145
144
142
140
139
135
132
128
124
120
115
110
105
99
94
89
84
80
76
72
68
64
1,15
1,19
1,23
1,25
1,27
1,30
1,30
1,34
1,34
1,36
1,38
1,39
1,38
1,37
1,35
1,34
1,33
1,31
1,27
1,22
1,16
1,10
1,06
1,03
1,01
1,01
1,01
1,00
0,99
1,01
1,01
1,00
1,00
0,97
0,94
0,92
16,8
16,5
16,2
15,9
15,6
15,3
15,0
14,7
14,4
14,0
13,3
12,6
11,9
11,3
10,6
10,0
9,5
8,9
8,4
7,9
7,5
7,0
6,5
6,1
5,7
14,4
13,9
13,3
12,9
12,4
12,0
11,7
11,2
10,9
10,5
9,6
8,9
8,2
7,6
7,1
6,5
6,0
5,6
5,3
5,1
5,1
5,0
5,1
5,1
5,1
4,7
4,3
5
3
1
-3
-9
-16
-23
-30
-37
-44
-50
-57
-63
-69
-74
-79
-84
-89
-95
-100
-105
-110
-116
-121
-126
-131
-135
-6
9,0
9,5
-10
-14
-18
-22
-26
-30
-34
-38
-42
-47
-52
-57
-63
-68
-74
-80
-86
-91
-95
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
5,3
4,8
4,5
4,1
3,7
3,4
3,1
2,8
48
42
36
30
23
15
9
60
55
50
45
40
34
29
3,1
2,8
2,7
2,5
3
-2
25
21
2,3
2,1
S e miconductor Group
6 of 10
Dra ft D, S e pte mbe r 99
CLX32
Typical Common Source S-Parameters (continued)
VDS = 8 V, ID = 400 mA, Zo = 50 Ω
f
|S 11|
<S 11
|S 21|
<S 21
|S 12|
<S 12
|S 22|
<S 22
k-Fa ct. S 2 1 /S 1 2
MAG
[dB]
[GHz]
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
2,8
3,0
3,2
3,4
3,6
3,8
4,0
4,2
4,4
4,6
4,8
5,0
5,5
6,0
6,5
7,0
7,5
8,0
8,5
9,0
9,5
10,0
10,5
11,0
11,5
12,0
12,5
13,0
13,5
14,0
14,5
15,0
15,5
16,0
16,5
17,0
17,5
18,0
[ma g]
0,812
0,844
0,868
0,881
0,888
0,892
0,895
0,896
0,897
0,897
0,897
0,897
0,897
0,897
0,897
0,898
0,899
0,900
0,901
0,903
0,904
0,905
0,907
0,910
0,911
0,911
0,911
0,909
0,908
0,906
0,906
0,906
0,907
0,908
0,909
0,909
0,908
0,904
0,897
0,889
0,880
0,870
0,857
0,844
0,828
0,814
0,802
0,793
0,787
[a ng]
-108
-126
-140
-151
-161
-167
-173
-178
178
174
170
167
164
161
159
157
154
152
150
148
146
144
142
136
132
127
122
117
112
106
100
95
89
83
78
73
68
63
58
53
48
42
36
29
22
15
8
2
[ma g]
9,653
8,058
6,693
5,643
4,846
4,229
3,745
3,352
3,030
2,762
2,537
2,341
2,176
2,043
1,910
1,793
1,693
1,594
1,522
1,447
1,374
1,305
1,237
1,094
0,983
0,891
0,816
0,753
0,699
0,650
0,606
0,567
0,530
0,496
0,465
0,438
0,414
0,395
0,380
0,369
0,362
0,357
0,355
0,359
0,366
0,377
0,390
0,404
0,423
[a ng]
123
108
97
88
81
75
69
64
59
54
50
46
42
39
35
31
28
24
21
18
15
12
8
0
-7
-15
-23
-30
-37
-45
-52
-59
-66
-72
-78
-84
-89
-94
-99
-103
-108
-112
-116
-120
-124
-129
-132
-136
-139
[ma g]
0,0175
0,0196
0,0209
0,0217
0,0225
0,0230
0,0235
0,0238
0,0241
0,0244
0,0247
0,0252
0,0259
0,0267
0,0273
0,0284
0,0291
0,0301
0,0312
0,0323
0,0338
0,0351
0,0364
0,0396
0,0437
0,0480
0,0525
0,0578
0,0635
0,0687
0,0743
0,0805
0,0866
0,0928
0,0995
0,1064
0,1146
0,1237
0,1338
0,1456
0,1599
0,1747
0,1911
0,2137
0,2396
0,2697
0,2995
0,3274
0,3525
[a ng]
36
31
28
24
22
20
19
19
18
18
19
19
19
20
20
20
20
21
20
21
20
20
20
20
19
18
16
13
10
6
2
-3
[ma g]
0,367
0,378
0,391
0,402
0,413
0,425
0,437
0,448
0,460
0,469
0,479
0,489
0,499
0,508
0,516
0,525
0,534
0,543
0,552
0,563
0,572
0,581
0,590
0,614
0,637
0,659
0,678
0,695
0,709
0,723
0,737
0,752
0,767
0,784
0,797
0,810
0,821
0,827
0,831
0,832
0,831
0,826
0,819
0,812
0,804
0,792
0,784
0,776
0,769
[a ng]
-167
-170
-173
-175
-178
-180
179
177
176
174
173
172
170
169
167
166
164
163
161
159
158
156
155
151
147
142
138
133
128
122
116
110
104
99
93
89
84
80
75
71
66
62
57
52
47
41
36
31
27
[ma g]
0,87
0,78
0,74
0,76
0,80
0,86
0,91
0,98
1,05
1,12
1,20
1,26
1,31
1,34
1,39
1,39
1,42
1,43
1,41
1,38
1,36
1,35
1,32
1,29
1,23
1,18
1,13
1,08
1,04
1,01
0,97
0,92
0,87
0,80
0,75
0,70
0,66
0,65
0,65
0,67
0,68
0,71
0,75
0,77
0,80
0,81
0,81
0,81
0,80
[dB]
27,4
26,1
25,1
24,2
23,3
22,6
22,0
21,5
21,0
20,5
20,1
19,7
19,2
18,8
18,4
18,0
17,6
17,2
16,9
16,5
16,1
15,7
15,3
14,4
13,5
12,7
11,9
11,1
10,4
9,8
9,1
8,5
7,9
7,3
6,7
6,1
5,6
5,0
4,5
4,0
3,5
3,1
2,7
2,2
1,8
1,5
19,7
18,4
17,4
16,6
15,9
15,3
14,7
14,3
13,8
13,4
13,1
12,8
12,5
12,2
11,9
11,2
10,6
10,1
9,7
9,4
9,2
9,2
-8
-12
-17
-22
-26
-30
-35
-40
-45
-50
-55
-61
-67
-73
-78
-83
-87
1,1
0,9
0,8
-3
S e miconductor Group
7 of 10
Dra ft D, S e pte mbe r 99
CLX32
Order Ins tructions :
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form:
Ordering Code: Q..........
CLX32- (nn) (ql)
(nn):
Output Power Level
(ql): Quality Level
Ordering Example:
Ordering Code: on request
CLX32-10 ES
For CLX32; Output Power Level 10 (Pout>32.5 dBm)
in ESA Space Quality Level
Further Informations :
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.de/semiconductor/products/35/35.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.de/semiconductor/products/35/353.htm
Please contact also our marketing division :
Tel.:
++89 234 24480
++89 234 28438
Fax.:
e-mail:
martin.wimmers@infineon.com
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
Address:
D-81617 Munich
S e miconductor Group
8 of 10
Dra ft D, S e pte mbe r 99
CLX32
MWP-25 Package
Publis hed by Infineon Technologies Semiconductors ,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Res erved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
1
3
Terms of delivery and rights to change design reserved.
2
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question
please
contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
S e miconductor Group
9 of 10
Dra ft D, S e pte mbe r 99
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