CPU165MM [INFINEON]
IGBT SIP MODULE Short Circuit Rated Fast IGBT; IGBT模块SIP短路额定IGBT的快速
| 型号： | CPU165MM |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE Short Circuit Rated Fast IGBT |
| 文件： | 总2页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Preliminary Data Sheet PD - 5.030
CPU165MM
Short Circuit Rated Fast IGBT
1,2
IGBT SIP MODULE
Features
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz).
•
Q1
Q2
D1
D2
4
5
6,7
9
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
14 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%.
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-1
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
42
V
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
IC @ TC = 100°C
23
ICM
120
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
120
IF @ TC = 100°C
15
IFM
120
tsc
10
µs
V
VGE
Gate-to-Emitter Voltage
± 20
2500
83
VISOL
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
VRMS
W
PD @ TC = 25°C
PD @ TC = 100°C
33
TJ
-40 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
°C/W
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
1.5
2.0
—
θJC (DIODE)
θCS (MODULE)
—
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 2
C-407
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CPU165MM
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.0
—
11
—
—
—
—
—
—
0.62
1.8
2.3
2.0
—
—
—
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temp.Coeff. of Breakdown Voltage
V/°C VGE = 0V, IC = 1.0mA
IC = 35A
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.0
—
VGE = 15V
V
IC = 60A
—
IC = 35A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-14
20
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
—
S
VCE = 100V, IC = 35A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
250
6500
1.7
1.5
µA
—
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 25A
VFM
IGES
Diode Forward Voltage Drop
1.3
1.2
—
V
IC = 25A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±500 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
120 180
IC = 35A
Qge
Qgc
td(on)
tr
25
40
38
60
—
—
nC
ns
VCC = 400V
78
TJ = 25°C
110
IC = 35A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
340 510
265 400
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
2.1
4.0
6.1
—
—
—
mJ
µs
Ets
9.5
—
tsc
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 5.0Ω, VCPK < 500V
TJ = 150°C,
td(on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
80
110
610
440
9.4
—
—
—
—
—
—
—
—
75
tr
td(off)
tf
ns
IC = 35A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
diode reverse recovery.
VGE = 0V
Turn-Off Delay Time
Fall Time
Ets
Total Switching Loss
Input Capacitance
mJ
pF
ns
A
Cies
Coes
Cres
trr
2900
230
30
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
VCC = 30V
ƒ = 1.0MHz
50
TJ = 25°C
105 160
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 25A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
4.5
8.0
10
15
VR = 200V
Qrr
112 375
420 1200
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
250
160
—
—
A/µs TJ = 25°C
TJ = 125°C
Notes:
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω.
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following:
Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13
C-408
To Order
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