DD122S06K-K [INFINEON]
Rectifier Diode, 121A, 600V V(RRM),;
| 型号： | DD122S06K-K |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 121A, 600V V(RRM), 二极管 |
| 文件： | 总4页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
DD 122 S
screwing depth
max. 12
for fillister head screw
M6x15 Z4-1
14
15
25
25
80
94
AK
K
A
March 1998
DD 122 S
Elektrische Eigenschaften
Höchstzulässige Werte
Electrical properties
Maximum rated values
repetitive peak reverse voltage
tvj = -40°C...t
tvj = +25°C...t
VRRM DD 122 S:
Periodische Spitzensperrspannung
400 600 800 1000
V
vj max
vj max
VRSM = V RRM
IFRMSM
Stoßspitzenspannung
non-repetitive peak reverse voltage
RMS forward current
+ 50
200
V
A
Durchlaßstrom-Grenzeffektivwert
Dauergrenzstrom
tc = 100°C
tc = 97°C
£
IFAVM
average forward current
121
A
127
A
IFSM
tvj 25°C, t p = 10 ms
tvj = tvj max, tp = 10 ms
Stoßstrom-Grenzwert
Grenzlastintegral
surge current
2500
2000
31200
20000
A
A
A2s
A2s
ò 2
ò 2
I t
£
tvj 25°C, t p = 10 ms
I
t-value
tvj = tvj max, tp = 10 ms
tvj = tvj max, iF = 350 A
tvj = tvj max, vR = VRRM
Charakteristische Werte
Durchlaßspannung
Schleusenspannung
Ersatzwiderstand
Sperrstrom
Characteristic values
forward voltage
threshold voltage
slope resistance
reverse current
lag charge
vF
max. 1,65
0,95
V
V
V(TO)
rT
W
1,7
m
iR
max. 40
max. 45
max. 25
3
mA
µAs
µAs
kV
tvj = tvj max, iFM = 100 A, DD 121 S: QS
-diF/dt = 100 A/µs, DD 122 S:
Nachlaufladung
VISOL
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Thermische Eigenschaften
Thermal properties
thermal resistance, junction
to case
Q
RthJC
Innerer Wärmewiderstand
max. 0,14 °C/W
max. 0,28 °C/W
max. 0,135 °C/W
max. 0,27 °C/W
max. 0,03 °C/W
max. 0,06 °C/W
=180°el. sin: pro Modul/per module
pro Zweig/per arm
DC: pro Modul/per module
pro Zweig/per arm
RthCK
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul/per module
pro Zweig/per arm
tvj max
tc op
tstg
Höchstzul.Sperrschichttemperatur
Betriebstemperatur
max. junction temperature
operating temperature
storage temperature
150
-40...+150
-40...+150
°C
°C
°C
Lagertemperatur
Mechanische Eigenschaften
Si-Elemente mit Druckkontakt
Innere Isolation
Mechanical properties
Si-pellets with pressure contact
internal insulation
tightening torques
mounting torque
AIN
Anzugsdrehmomente
mechanische Befestigung
elektrische Anschlüsse
Gewicht
Toleranz/tolerance +/- 15%
Toleranz/tolerance +5%/-10%
M1
M2
G
6
Nm
Nm
g
terminal connection torque
weight
6
typ. 430
14
Kriechstrecke
creepage distance
vibration resistance
outline
mm
m/s²
6
×
Schwingfestigkeit
f = 50 Hz
5
9,81
Maßbild
DD 122 S kann auch mit gemeinsamer Anode oder gemeinsamer Kathode geliefert werden.
DD 122 S can also be supplied with common anode or common cathode.
DD 122 S
400
300
I
= 2560 A
FM
300
1280 A
I
= 2560 A
FM
I
A
1280 A
RM
[ ]
Q
[
r
640 A
320 A
640 A
]
µAs
320 A
200
100
160 A
80 A
40 A
20 A
200
160 A
80 A
100
40 A
20 A
100
50
150
100
50
150
0
200
250
200
[
0
250
[
]
]
-di /dt A/µs
DD 122 S/1
DD 122 S/2
-di /dt A/µs
F
F
Bild / Fig. 1
Bild / Fig. 2
Sperrverzögerungsladung Q = f(-di/dt), t = t
, v £ 0,5 V
,
Rückstromspitze I = f(-di/dt), t = t
, v £ 0,5 V
, v = 0,8 V
RRM RM RRM
r
vj
vj (max)
R
RRM
RM
vj
vj (max)
R
v
= 0,8 V
/
Peak reverse recovery current I
= f(-di/dt), t = t
, v £ 0,5 V
,
RM
RRM
RM
vj
vj (max)
R
RRM
Recovered charge Q = f(-di/dt), t = t
, v £ 0,5 V
RRM
,
v = 0,8 V
r
vj
vj (max)
R
RM RRM
v
= 0,8 V
RRM
Parameter: Durchlaßstrom / On-state current I
TM
RM
Parameter: Durchlaßstrom / On-state current I
FM
0.450
0.400
Analytische Elemente des transienten Wärmewiderstandes Z
pro Zweig für DC
thJC
per arm for DC
Analytical elements of transient thermal impedance Z
thJC
0.350
thJC
[°C/W]
Pos. n
[°C/W]
1
2
3
4
5
6
7
Z
R
0,0102 0,0329 0,0805 0,0741
0,00112 0,0175 0,322 1,21
0,072
7,5
thn
t
[s]
n
0.250
Analytische Funktion / Analytical function:
0.200
0.150
n
max
t
-
t n
)
60°
Z
=
R
(1-e
thn
thJC
S
0.100
0.050
0
n=1
120°
180°
DC
180°
2
3 4 6
2
3 4
6
2
3 4
6
2
3 4
t [s]
6
2
3 4
6
10
-3
-2
-1
10
0
10
1
2
10
10
10
DD 121 S/3
Bild / Fig. 3
Transienter innerer Wärmewiderstand Z
für einen Zweig
thJC
bei sinus- und trapezförmigem Stromverlauf
Transient thermal impedance Z , junction to case per arm
thJC
at sinussoidal and trapezoidal waveform.
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