ESD5V0S1U-03W [INFINEON]

Silicon TVS Diodes; 硅TVS二极管
ESD5V0S1U-03W
型号: ESD5V0S1U-03W
厂家: Infineon    Infineon
描述:

Silicon TVS Diodes
硅TVS二极管

二极管 电视
文件: 总8页 (文件大小:153K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ESD5V0S...  
Silicon TVS Diodes  
ESD / transient protection of data and power lines  
in 3.3 V / 5 V applications according to:  
IEC61000-4-2 (ESD): ± 30 kV (contact)  
IEC61000-4-4 (EFT): 80 A (5/50 ns)  
IEC61000-4-5 (surge): 40 A/600 W (8/20 µs)  
Max. working voltage: 5 V  
Low clamping voltage  
Low reverse current  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Applications  
Uni or bi-directional operation possible  
(see application example page 5)  
Mobile communication  
Consumer products (STB, MP3, DVD, DSC...)  
LCD displays, camera  
Notebooks and desktop computers, peripherals  
ESD5V0S1U-03W  
ESD5V0S2U-06  
3
D2  
D1  
1
2
1
2
Type  
ESD5V0S1U-03W  
ESD5V0S2U-06  
Package  
SOD323  
SOT23  
Configuration  
1 line, uni-directional  
2 lines, uni-directional  
Marking  
E/yellow  
E5  
2007-12-07  
1
ESD5V0S...  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
ESD contact discharge  
Peak pulse current (t = 8 / 20 µs)  
Peak pulse power (t = 8 / 20 µs)  
Operating temperature range  
Storage temperature  
Symbol  
V
ESD  
I
pp  
Value  
30  
40  
Unit  
kV  
A
W
°C  
1)  
2)  
p
2)  
600  
P
T
T
p
pk  
-55...125  
-65...150  
op  
stg  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
Characteristics  
-
-
5
8
V
Reverse working voltage  
Breakdown voltage  
V
V
RWM  
(BR)  
5.5  
6.7  
I
= 1 mA  
(BR)  
µA  
V
Reverse current  
V = 3.3 V  
I
R
-
-
-
-
5
20  
R
V = 5 V  
R
Clamping voltage (positive transient)  
V
V
CL  
FC  
2)  
I
= 5 A, t = 8/20 µs  
-
-
-
7.5  
9
11  
9.5  
12  
14  
PP  
p
2)  
2)  
I
= 24 A, t = 8/20 µs  
p
PP  
I
= 40 A, t = 8/20 µs  
PP  
p
Forward clamping voltage (negative transients)  
2)  
I
= 5 A, t = 8/20 µs  
-
-
-
1.5  
3
4
3
5
6
PP  
p
2)  
2)  
I
= 24 A, t = 8/20 µs  
PP  
p
I
= 40 A, t = 8/20 µs  
PP  
p
-
430  
500 pF  
Diode capacitance  
V = 0 V, f = 1 MHz  
C
T
R
1V  
according to IEC61000-4-2  
ESD  
2I according to IEC61000-4-5  
pp  
2007-12-07  
2
ESD5V0S...  
Power derating curve P = ƒ (T )  
Clamping voltage V = ƒ(I )  
cl pp  
pk  
A
t = 8 / 20 µs (positive transients)  
p
110  
%
14  
V
12  
11  
10  
9
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8
7
6
5
4
3
2
1
0
°C  
A
0
25  
50  
75  
100  
150  
0
5
10  
15  
20  
25  
30  
40  
T
I
pp  
A
Forward clamping voltage V = ƒ (I )  
Reverse current I = ƒ(V )  
R R  
FC  
PP  
t = 8 / 20 µs (negative transient)  
T = Parameter  
p
A
10 -5  
A
14  
V
12  
11  
10  
9
10 -6  
10 -7  
10 -8  
10 -9  
10 -10  
8
7
TA = 125°C  
85°C  
6
5
25°C  
-40°C  
4
3
2
1
0
A
V
0
5
10  
15  
20  
25  
30  
40  
0
1
2
3
5
I
V
R
pp  
2007-12-07  
3
ESD5V0S...  
Diode capacitance C = ƒ (V )  
T
R
f = 1MHz  
450  
pF  
350  
300  
250  
200  
150  
0
V
1
2
3
5
V
R
2007-12-07  
4
ESD5V0S...  
Application example ESD5V01U-03W  
single channel, uni-directional  
Connector  
Protected signal line  
I/O  
ESD  
1
2
sensitive  
device  
The protection diode  
should be placed very  
close to the location  
where the ESD can  
occur to keep loops and  
inductances as small as  
possible.  
Application example ESD5V0S2U-06  
dual channel, uni-directional  
Connector  
Protected signal line  
I/O  
ESD sensitive  
device  
I/O  
Protected signal line  
2
1
The protection diode should be placed very  
close to the location where the ESD or other  
transients can occur to keep loops and  
inductances as small as possible. Pin 3  
should be connected directly to a ground  
plane on the board.  
3
Application example ESD5V0S2U-06  
single channel, bi-directional  
Connector  
Protected signal line  
I/O  
ESD  
sensitive  
device  
1
2
3
Pin 2 should be  
connected directly  
to a ground plane  
on the board. Pin 3  
is not connected.  
2007-12-07  
5
Package SOD323  
ESD5V0S...  
Package Outline  
+0.2  
-0.1  
0.9  
+0.2  
-0.1  
1.25  
±0.05  
0
A
2
Cathode  
marking  
1
+0.1  
-0.05  
+0.05  
0.3  
-0.2  
0.3  
+0.1  
-0.06  
0.15  
M
0.25  
A
Foot Print  
0.6  
Marking Layout (Example)  
BAR63-03W  
Type code  
Cathode marking  
Laser marking  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
1
0.65  
1.35  
Cathode  
marking  
2007-12-07  
6
Package SOT23  
ESD5V0S...  
Package Outline  
±0.1  
1
0.1 MAX.  
±0.1  
2.9  
B
3
1
2
1)  
+0.1  
-0.05  
0.4  
A
0.08...0.15  
C
0.95  
0...8˚  
1.9  
0.25 B C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2007-12-07  
7
ESD5V0S...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-12-07  
8

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