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ESD5V0S5US-E6433 [INFINEON]

Trans Voltage Suppressor Diode, 5.3V V(RWM), Unidirectional,;
ESD5V0S5US-E6433
型号： ESD5V0S5US-E6433
厂家： Infineon    Infineon
描述：

Trans Voltage Suppressor Diode, 5.3V V(RWM), Unidirectional,

二极管
文件： 总7页 (文件大小：835K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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ESD5V0SxUS  
Multi-Channel TVS Diode Array  
• ESD / transient protection of  
data and power lines  
in 3.3 V / 5 V application according to:  
IEC61000-4-2 (ESD): 30 KV (contact)  
IEC61000-4-4 (EFT): 80 A (5/50 ns)  
IEC61000-4-5 (Surge): 10 A (8/20 µs)  
• Working voltage: 5 V (5.3 V max.)  
• Low clamping voltage  
• Low reverse current < 5 µA  
• Pb-free (RoHS compliant) package  
Applications  
• Uni or bi-directional operation possible  
(see application example page 5)  
• Mobile communication  
• Consumer products (STB, MP3, DVD, DSC...)  
• LCD displays, camera  
• Notebooks and desktop computers, peripherals  
ESD5V0S4US  
ESD5V0S5US  
ESD5V0S5US E6727  
180° rotated in reel  
2
1 3  
6
5
4
6
5
4
4
5
6
1
2
3
1
2
3
Type  
ESD5V0S4US  
ESD5V0S5US  
ESD5V3S5US E6727*  
Package  
SOT363  
SOT363  
SOT363  
Configuration  
Marking  
E4s  
E5s  
4 lines, uni-directional  
5 lines, uni-directional  
5 lines, uni-directional  
on request  
* Preliminary data  
2011-06-17  
1
ESD5V0SxUS  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
ESD contact discharge per diode  
Peak pulse current (t = 8 / 20 µs) per diode  
Symbol  
Value  
30  
10  
Unit  
kV  
A
1)  
V
ESD  
2)  
I
p
pp  
130  
W
Peak pulse power (t = 8 / 20 µs) per diode  
P
p
pk  
°C  
Operating temperature range  
Storage temperature  
T
-55...125  
-65...150  
op  
T
stg  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
V
min.  
Characteristics -  
Reverse working voltage  
Breakdown voltage  
-
5
6.7  
5.3  
7.7  
V
V
RWM  
(BR)  
5.7  
I
= 1 mA  
(BR)  
µA  
V
Reverse current  
V = 3.3 V  
I
R
-
-
-
-
1
5
R
V = 5 V  
R
Clamping voltage (positive transients)  
V
V
CL  
FC  
2)  
I
= 1 A, t = 8/20 µs  
-
-
7
10.5  
9
13  
PP  
p
2)  
I
= 10 A, t = 8/20 µs  
PP  
p
Forward clamping voltage (negative transients)  
2)  
I
= 1 A, t = 8/20 µs  
-
-
1
3.5  
3
6
PP  
p
2)  
I
= 10 A, t = 8/20 µs  
PP  
p
pF  
Diode capacitance  
V = 0 V, f = 1 MHz  
C
T
-
-
70  
35  
90  
55  
R
V = 5 V, f = 1 MHz  
R
1
V
according to IEC61000-4-2  
according to IEC61000-4-5  
ESD  
2
I
pp  
2011-06-17  
2
ESD5V0SxUS  
Power derating curve P = ƒ (T )  
Clamping voltage, V = ƒ(I )  
cl pp  
pk  
A
t = 8 / 20 µs (positive transients)  
p
13  
V
110  
%
11  
10  
9
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8
7
6
5
4
3
2
1
0
°C  
A
0
25  
50  
75  
100  
150  
0
1
2
3
4
5
6
7
8
10  
T
I
A
pp  
Forward clamping voltage V = ƒ (I )  
Reverse current I = ƒ(V )  
R R  
FC  
pp  
t = 8 / 20 µs (negative transients)  
T = Parameter  
p
A
10 -6  
A
13  
V
11  
10  
9
10 -7  
TA = 125°C  
85°C  
10 -8  
10 -9  
8
25°C  
7
6
5
4
3
10 -10  
2
1
10 -11  
0
A
V
0
1
2
3
4
5
6
7
8
10  
0
1
2
3
5
I
V
R
pp  
2011-06-17  
3
ESD5V0SxUS  
Normalized reverse voltage  
V (T )/V (25°C)= ƒ(T )  
Diode capacitance C = ƒ (V )  
T R  
f = 1MHz  
BR  
A
BR  
A
I = 1 mA  
R
90  
pF  
1.06  
1.04  
1.03  
1.02  
1.01  
1
70  
60  
50  
40  
30  
0.99  
0.98  
0.97  
0.96  
0.95  
20  
0
V
-50 -25  
0
25  
50  
75  
100  
150  
1
2
3
5
°C  
T
V
R
A
2011-06-17  
4
ESD5V0SxUS  
Application example ESD5V0S5US  
5 channels, uni-directional  
5 protected signal lines, level 0 ... +5.3V  
I/O  
I/O  
I/O  
I/O  
I/O  
ESDsensitive  
device  
3
4
2
5
1
6
The protection diode should be placed  
very close to the location where the  
ESD or other transients can occur to  
keep loops and inductances as small  
as possible.  
Pin 5 should be connected directly to a  
ground plane on the board.  
Application example ESD5V0S5US  
4 channels, bi-directional  
4 protected signal lines, level -5.3V ... +5.3V  
I/O  
I/O  
I/O  
I/O  
ESDsensitive  
device  
6
1
5
2
4
3
For bi-directional protection pin 2  
(or any other pin except pin 5)  
should be connected directly to a  
ground plane on the board.  
Pin 5 is not connected. Total  
clamping voltage is the sum of  
VCL + VFC (see table on page 2).  
Application example ESD5V0S4US  
4 channels, uni-directional  
4 protected signal lines, level 0 … +5.3V  
I/O  
I/O  
I/O  
I/O  
ESDsensitive  
device  
3
2
1
6
Pin 2 and pin 5 should be  
connected directly to a ground  
plane on the board.  
4
5
2011-06-17  
5
Package SOT363  
ESD5V0SxUS  
Package Outline  
0.2  
2
0.1  
0.9  
+0.1  
-0.05  
6x  
0.2  
0.1 MAX.  
0.1  
M
0.1  
A
6
1
5
4
3
2
Pin 1  
marking  
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.3  
0.65  
0.65  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCR108S  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
1.1  
2.15  
Pin 1  
marking  
2011-06-17  
6
ESD5V0SxUS  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-06-17  
7

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