F3L11MR12W2M1_B74 [INFINEON]

phase leg;


型号：	F3L11MR12W2M1_B74
厂家：	Infineon
描述：	phase leg
文件：	总20页 (文件大小：742K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

F3L11MR12W2M1_B74

™

EasyPACK module

Preliminary datasheet

EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC

™

Features

• Electrical features

- V_DSS= 1200 V

- I_DN= 100 A / I_DRM= 200 A

- Increased DC-link voltage

- High current density

- Low switching losses

• Mechanical features

- Rugged mounting due to integrated mounting clamps

- PressFIT contact technology

- Integrated NTC temperature sensor

Potential applications

• Three-level applications

• High-frequency switching application

• Solar applications

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

IGBT, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5

Diode, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

1 Package

Package

Table 1

Insulation coordination

Symbol Note or test condition

Parameter

Values

3.0

Unit

Isolation test voltage

Internal isolation

Creepage distance

Clearance

V_ISOL

RMS, f = 50 Hz, t = 1 min

basic insulation (class 1, IEC 61140)

Al₂O₃

11.5

6.3

d_Creepterminal to heatsink

d_Creepterminal to terminal

d_Clearterminal to heatsink

d_Clearterminal to terminal

CTI

10.0

5.0

Clearance

Comparative tracking

index

> 200

Relative thermal index

(electrical)

RTI

housing

140

°C

Table 2

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Stray inductance module

Storage temperature

Mounting force per clamp

Weight

L_sCE

°C

T_stg

-40

125

Note:

The current under continuous operation is limited to 25 A rms per connector pin.

MOSFET

Table 3

Maximum rated values

Parameter

Symbol Note or test condition

Values

1200

100

Unit

Drain-source voltage

V_DSS

I_DN

T_vj= 25 °C

T_H= 65 °C

Implemented drain current

Continuous DC drain

current

I_DDC

T_vj= 175 °C, V_GS= 15 V

Repetitive peak drain

current

I_DRM

V_GS

verified by design, t_plimited by T_vjmax

200

Gate-source voltage, max.

transient voltage

D < 0.01

-10/23

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

2 MOSFET

Table 4

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

Unit

Min.

Max.

Drain-source on-resistance R_DS(on)I_D= 100 A

V_GS= 15 V,

T_vj= 25 °C

11.3

mΩ

V_GS= 15 V,

T_vj= 125 °C

14.8

16.5

4.5

V_GS= 15 V,

T_vj= 150 °C

Gate threshold voltage

V_GS(th)I_D= 40 mA, V_DS= V_GS, T_vj= 25 °C, (tested afte 3.45

5.15

1ms pulse at V_GS= +20 V)

Total gate charge

Internal gate resistor

Input capacitance

Q_G

R_Gint

C_ISS

V_DD= 800 V, V_GS= -5/15 V

T_vj= 25 °C

0.277

µC

Ω

f = 100 kHz, V_DS= 800 V, T_vj= 25 °C

V_GS= 0 V

8.8

Output capacitance

C_OSS

C_rss

f = 100 kHz, V_DS= 800 V, T_vj= 25 °C

V_GS= 0 V

0.42

Reverse transfer

capacitance

f = 100 kHz, V_DS= 800 V, T_vj= 25 °C

V_GS= 0 V

0.028

C_OSSstored energy

E_OSS

I_DSS

V_DS= 800 V, V_GS= -5/15 V, T_vj= 25 °C

176

0.4

µJ

µA

Drain-source leakage

current

V_DS= 1200 V, V_GS= -5 V

T_vj= 25 °C

380

400

Gate-source leakage

current

I_GSS

V_DS= 0 V, T_vj= 25 °C

V_GS= 20 V

Turn-on delay time

(inductive load)

t_{d on}

I_D= 100 A, R_Gon= 3.9 Ω, T_vj= 25 °C

45.1

43.9

V_DD= 600 V, V_GS= -5/15 V

T_vj= 125 °C

T_vj= 150 °C

Rise time (inductive load)

t_r

t_{d oﬀ}

t_f

I_D= 100 A, R_Gon= 3.9 Ω, T_vj= 25 °C

25.5

25.3

24.4

84.2

86.7

87.5

32.2

35.5

37.3

V_DD= 600 V, V_GS= -5/15 V

T_vj= 125 °C

T_vj= 150 °C

Tuen-oﬀ delay time

(inductive load)

I_D= 100 A, R_Goﬀ= 3.9 Ω, T_vj= 25 °C

V_DD= 600 V, V_GS= -5/15 V

T_vj= 125 °C

T_vj= 150 °C

Fall time (inductive load)

I_D= 100 A, R_Goﬀ= 3.9 Ω, T_vj= 25 °C

V_DD= 600 V, V_GS= -5/15 V

T_vj= 125 °C

T_vj= 150 °C

Turn-on energy loss per

pulse

E_on

I_D= 100 A, V_DD= 600 V,

L_σ= 35 nH, V_GS= -5/15 V,

R_Gon= 3.9 Ω, di/dt = 4.5

kA/µs (T_vj= 150 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

1.15

1.24

(table continues...)

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

3 Body diode

Table 4

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.62

Unit

Min.

Max.

Tuen-oﬀ energy loss per

pulse

E_oﬀ

I_D= 100 A, V_DD= 600 V,

L_σ= 35 nH, V_GS= -5/15 V,

R_Goﬀ= 3.9 Ω, dv/dt = 21

kV/µs (T_vj= 150 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

1.85

1.93

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per MOSFET

0.58

K/W

°C

Temperature under

switching conditions

-40

150

Note:

The selection of positive and negative gate-source voltages impacts losses and the long-term behavior

of the MOSFET and body diode. The design guidelines described in Application Note AN 2018-09 and AN

2021-13 must be considered to ensure sound operation of the device over the planned lifetime.

Body diode

Table 5

Maximum rated values

Parameter

Symbol Note or test condition

I_SDT_vj= 175 °C, V_GS= -5 V

Values

Unit

DC body diode forward

current

T_H= 20 °C

Table 6

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

4.6

Unit

Min.

Max.

Forward voltage

V_SD

I_SD= 100 A, V_GS= -5 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 150 °C

5.65

4.35

4.3

IGBT, 3-Level

Table 7

Maximum rated values

Symbol Note or test condition

V_CES

Parameter

Values

1200

100

Unit

Collector-emitter voltage

T_vj= 25 °C

T_H= 65 °C

Implemented collector

current

I_CN

I_CDC

I_CRM

Continuous DC collector

current

T_{vj max}= 175 °C

Repetitive peak collector

current

t_plimited by T_{vj op}

200

(table continues...)

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

4 IGBT, 3-Level

Table 7

(continued) Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Gate-emitter peak voltage

V_GES

Table 8

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

1.50

1.64

1.72

5.80

1.8

Unit

Min.

Max.

Collector-emitter

saturation voltage

V_{CE sat}I_C= 100 A, V_GE= 15 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

TBD

Gate threshold voltage

Gate charge

V_GEth

Q_G

I_C= 2.5 mA, V_CE= V_GE, T_vj= 25 °C

5.15

6.45

V_GE= 15 V, V_CC= 600 V

T_vj= 25 °C

µC

Ω

Internal gate resistor

Input capacitance

R_Gint

C_ies

1.5

f = 100 kHz, T_vj= 25 °C, V_CE= 25 V, V_GE= 0 V

21.7

0.076

Reverse transfer

capacitance

C_res

Collector-emitter cuꢀ-oﬀ

I_CES

I_GES

t_don

V_CE= 1200 V, V_GE= 0 V

T_vj= 25 °C

0.009 mA

current

Gate-emitter leakage

current

V_CE= 0 V, V_GE= 20 V, T_vj= 25 °C

100

µs

Turn-on delay time

(inductive load)

I_C= 100 A, V_CC= 600 V,

V_GE= 15 V, R_Gon= 1.8 Ω

T_vj= 25 °C

0.153

0.166

0.174

0.033

0.037

0.040

0.283

0.368

0.421

0.149

0.221

0.273

6.75

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

Rise time (inductive load)

t_r

t_doﬀ

t_f

I_C= 100 A, V_CC= 600 V,

V_GE= 15 V, R_Gon= 1.8 Ω

µs

Tuen-oﬀ delay time

(inductive load)

I_C= 100 A, V_CC= 600 V,

V_GE= 15 V, R_Goﬀ= 1.8 Ω

Fall time (inductive load)

I_C= 100 A, V_CC= 600 V,

V_GE= 15 V, R_Goﬀ= 1.8 Ω

µs

Turn-on energy loss per

pulse

E_on

I_C= 100 A, V_CC= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Gon= 1.8 Ω, di/dt =

9.8

11.5

2400 A/µs (T_vj= 175 °C)

(table continues...)

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

5 Diode, 3-Level

Table 8

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

6.6

Unit

Min.

Max.

Tuen-oﬀ energy loss per

E_oﬀ

I_C= 100 A, V_CC= 600 V,

L_σ= 35 nH, V_GE= 15 V,

R_Goﬀ= 1.8 Ω, dv/dt =

2700 V/µs (T_vj= 175 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

pulse

10.2

12.7

370

SC data

I_SC

V_GE≤ 15 V, V_CC= 800 V,

V_CEmax=V_CES-L_sCE*di/dt

t_P≤ 8 µs,

T_vj≤ 150 °C

t_P≤ 7 µs,

T_vj≤ 175 °C

350

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per IGBT

0.920

K/W

°C

Temperature under

switching conditions

-40

175

Note:

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14

Diode, 3-Level

Table 9

Maximum rated values

Parameter

Symbol Note or test condition

Values

Unit

Repetitive peak reverse

voltage

V_RRM

T_vj= 25 °C

1200

Continuous DC forward

current

I_F

100

200

Repetitive peak forward

current

I²t - value

I_FRM

I²t

t_P= 1 ms

t_P= 10 ms, V_R= 0 V

T_vj= 125 °C

T_vj= 175 °C

970

860

A²s

Table 10

Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

1.72

Unit

Min.

Max.

Forward voltage

V_F

I_F= 100 A, V_GE= 0 V

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

TBD

1.59

1.52

(table continues...)

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

6 NTC-Thermistor

Table 10

(continued) Characteristic values

Symbol Note or test condition

Parameter

Values

Typ.

95.5

119

Unit

Min.

Max.

Peak reverse recovery

current

I_RM

V_CC= 600 V, I_F= 100 A,

V_GE= -15 V, -di_F/dt =

2400 A/µs (T_vj= 175 °C)

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

T_vj= 25 °C

T_vj= 125 °C

T_vj= 175 °C

134

Recovered charge

Q_r

V_CC= 600 V, I_F= 100 A,

V_GE= -15 V, -di_F/dt =

2400 A/µs (T_vj= 175 °C)

8.64

15.1

µC

Reverse recovery energy

E_rec

V_CC= 600 V, I_F= 100 A,

V_GE= -15 V, -di_F/dt =

2400 A/µs (T_vj= 175 °C)

3.13

5.83

7.58

1.03

Thermal resistance,

junction to heat sink

R_thJH

T_{vj op}

per diode

K/W

°C

Temperature under

switching conditions

-40

175

Note:

Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN

2018-14.

NTC-Thermistor

Table 11

Characteristic values

Parameter

Symbol Note or test condition

Values

Typ.

Unit

Min.

Max.

Rated resistance

Deviation of R₁₀₀

Power dissipation

B-value

R₂₅

ΔR/R

P₂₅

T_NTC= 25 °C

kΩ

T_NTC= 100 °C, R₁₀₀= 493 Ω

T_NTC= 25 °C

-5

B_25/50R₂= R₂₅exp[B_25/50(1/T₂-1/(298,15 K))]

B_25/80R₂= R₂₅exp[B_25/80(1/T₂-1/(298,15 K))]

B_25/100R₂= R₂₅exp[B_25/100(1/T₂-1/(298,15 K))]

3375

3411

3433

B-value

Note:

Specification according to the valid application note.

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Characteristics diagrams

Output characteristic (typical), MOSFET

I_D= f(V_DS

Output characteristic field (typical), MOSFET

I_D= f(V_DS

)

V_GS= 15 V

T_vj= 150 °C

200

180

160

140

120

100

180

160

140

120

100

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Transfer characteristic (typical), MOSFET

I_D= f(V_GS

Gate charge characteristic (typical), MOSFET

V_GS= f(Q_G)

)

V_DS= 20 V

I_D= 100 A, T_vj= 25 °C

200

180

160

140

120

100

-5

0.00

0.05

0.10

0.15

0.20

0.25

0.30

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Capacity characteristic (typical), MOSFET

Switching losses (typical), MOSFET

E = f(I_D)

C = f(V_DS

)

f = 100 kHz, T_vj= 25 °C, V_GS= 0 V

R_Goﬀ= 3.9 Ω, R_Gon= 3.9 Ω, V_DS= 600 V, V_GS= -5/15 V

100

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.1

0.01

0.1

100

1000

20 40 60 80 100 120 140 160 180 200

Switching losses (typical), MOSFET

E = f(R_G)

Reverse bias safe operating area (RBSOA), MOSFET

I_D= f(V_DS

)

V_DS= 600 V, I_D= 100 A, V_GS= -5/15 V

R_Goﬀ= 3.9 Ω, T_vj= 150 °C, V_GS= -5/15 V

12.0

11.0

10.0

9.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

250

200

150

100

200

400

600

800 1000 1200 1400

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Transient thermal impedance , MOSFET

Z_th= f(t)

Output characteristic (typical), IGBT, 3-Level

I_C= f(V_CE

)

V_GE= 15 V

200

180

160

140

120

100

0.1

0.01

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.001

0.01

0.1

Output characteristic field (typical), IGBT, 3-Level

I_C= f(V_CE

Transfer characteristic (typical), IGBT, 3-Level

I_C= f(V_GE

)

T_vj= 175 °C

V_CE= 20 V

200

180

160

140

120

100

180

160

140

120

100

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Switching losses (typical), IGBT, 3-Level

E = f(I_C)

E = f(R_G)

R_Goﬀ= 1.8 Ω, R_Gon= 1.8 Ω, V_CC= 600 V, V_GE

15 V

I_C= 100 A, V_CC= 600 V, V_GE

15 V

20 40 60 80 100 120 140 160 180 200

10 12 14 16 18 20

Switching times (typical), IGBT, 3-Level

t = f(I_C)

t = f(R_G)

R_Goﬀ= 1.8 Ω, R_Gon= 1.8 Ω, V_CC= 600 V, V_GE

175 °C

15 V, T_vj=

I_C= 100 A, V_CC= 600 V, V_GE

15 V, T_vj= 175 °C

0.1

0.01

0.001

0.01

100

150

200

10 12 14 16 18 20

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Voltage slope (typical), IGBT, 3-Level

dv/dt = f(R_G)

Transient thermal impedance , IGBT, 3-Level

Z_th= f(t)

I_C= 100 A, V_CC= 600 V, V_GE= 15 V, T_vj= 25 °C

0.1

0.01

10 12 14 16 18 20

0.001

0.01

0.1

Reverse bias safe operating area (RBSOA), IGBT, 3-

Level

Capacity characteristic (typical), IGBT, 3-Level

C = f(V_CE

f = 100 kHz, V_GE= 0 V, T_vj= 25 °C

)

I_C= f(V_CE

)

R_Goﬀ= 1.8 Ω, V_GE= 15 V, T_vj= 175 °C

250

1000

100

200

150

100

0.1

0.01

0.001

200

400

600

800 1000 1200 1400

10 20 30 40 50 60 70 80 90 100

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Gate charge characteristic (typical), IGBT, 3-Level

V_GE= f(Q_G)

Forward characteristic (typical), Diode, 3-Level

I_F= f(V_F)

I_C= 100 A, T_vj= 25 °C

200

180

160

140

120

100

-5

-10

-15

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

0.0

0.5

1.0

1.5

2.0

2.5

Switching losses (typical), Diode, 3-Level

E_rec= f(I_F)

Switching losses (typical), Diode, 3-Level

E_rec= f(R_G)

R_Gon= 1.8 Ω , V_CC= 600 V

I_F= 100 A, V_CC= 600 V

20 40 60 80 100 120 140 160 180 200

10 12 14 16 18 20

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

7 Characteristics diagrams

Transient thermal impedance, Diode, 3-Level

Z_th= f(t)

Temperature characteristic (typical), NTC-Thermistor

R = f(T_NTC

)

100000

10000

1000

100

0.1

0.01

100

125

150

175

0.001

0.01

0.1

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

8 Circuit diagram

Circuit diagram

Figure 1

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

9 Package outlines

Package outlines

Figure 2

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

10 Module label code

Module label code

Code format

Encoding

Data Matrix

ASCII text

Barcode Code128

Code Set A

23 digits

Symbol size

Standard

16x16

IEC24720 and IEC16022

IEC8859-1

Code content

Content

Digit

1 – 5

6 - 11

12 - 19

20 – 21

22 – 23

Example

Module serial number

Module material number

Production order number

Date code (production year)

Date code (production week)

71549

142846

55054991

Example

71549142846550549911530

Figure 3

Datasheet

Revision 0.20

2022-05-25

F3L11MR12W2M1_B74

™

EasyPACK module

Revision history

Document revision

Date of release Description of changes

V1.0

V2.0

n/a

2020-05-29

2020-09-04

2020-09-01

Target datasheet

Preliminary datasheet

Datasheet migrated to a new system with a new layout and new revision

number schema: target or preliminary datasheet = 0.xy; final datasheet =

1.xy

0.20

2022-05-25

Preliminary datasheet

Datasheet

Revision 0.20

2022-05-25

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

Edition 2022-05-25

Published by

Infineon Technologies AG

81726 Munich, Germany

Important notice

Warnings

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Btschaﬀtnhtiꢀsgaeanꢀit”).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer’s compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer’s products and any use of the product of

Infineon Technologies in customer’s applications.

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies oﬀict.

Except as otherwise explicitly approved by Infineon

Technologies in

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or

any consequences of the use thereof can reasonably

be expected to result in personal injury.

a written document signed by

2022 Infineon Technologies AG

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Document reference

IFX-AAJ559-003

The data contained in this document is exclusively

intended for technically trained sꢀaﬀ. It is the

responsibility of customer’s technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to such

application.

F3L11MR12W2M1_B74 [INFINEON]

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