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F3L600R10W4S7F_C22 [INFINEON]

PressFIT;
F3L600R10W4S7F_C22
型号： F3L600R10W4S7F_C22
厂家： Infineon    Infineon
描述：

PressFIT
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中文：  中文翻译
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F3L600R10W4S7F_C22  
™
EasyPACK module  
™
™
™
EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and PressFIT / NTC  
Features  
• Electrical features  
- VCES = 950 V  
- IC nom = 600 A / ICRM = 800 A  
- CoolSiCTM Schottky diode gen 5  
- TRENCHSTOPTM IGBT7  
- Tvj,op = 150°C  
• Mechanical features  
- Package with CTI > 400  
- PressFIT contact technology  
- Integrated NTC temperature sensor  
Potential applications  
• Solar applications  
• Three-level applications  
Product validation  
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068  
Description  
-
-
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
Table of contents  
Table of contents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
IGBT, T1 / T4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
IGBT, T5 / T6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8  
Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Diode, D5 / D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9  
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10  
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25  
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28  
1
2
3
4
5
6
7
8
9
10  
11  
12  
Datasheet  
2
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
1 Package  
1
Package  
Table 1  
Insulation coordination  
Symbol Note or test condition  
Parameter  
Values  
3.2  
Unit  
Isolation test voltage  
Internal isolation  
Creepage distance  
Clearance  
VISOL  
RMS, f = 50 Hz, t = 1 min  
kV  
basic insulation (class 1, IEC 61140)  
Al2O3  
11.0  
dCreep terminal to heatsink  
mm  
mm  
dClear terminal to heatsink  
9.2  
Comparative tracking  
index  
CTI  
> 400  
Relative thermal index  
(electrical)  
RTI  
housing  
140  
°C  
Table 2  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
20  
Unit  
Min.  
Max.  
Stray inductance module  
LsCE  
nH  
Module lead resistance,  
terminals - chip  
RCC'+EE' TH=25°C, per switch  
1.8  
mΩ  
Storage temperature  
Tstg  
-40  
1.3  
125  
1.5  
°C  
Terminal connection  
torque  
M
- Mounting according to M5, Screw  
valid application note  
Nm  
Weight  
G
112  
g
Note:  
The current under continuous operation is limited to 25A rms per connector pin.  
2
IGBT, T1 / T4  
Table 3  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
950  
Unit  
Collector-emitter voltage  
VCES  
ICN  
Tvj = 25 °C  
TH = 65 °C  
V
A
Implemented collector  
current  
600  
Continuous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
310  
800  
20  
A
A
V
Repetitive peak collector  
current  
tp limited by Tvj op  
Gate-emitter peak voltage  
Datasheet  
3
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
2 IGBT, T1 / T4  
Table 4  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
1.63  
1.79  
1.82  
5.10  
1.35  
0.5  
Unit  
Min.  
Max.  
Collector-emitter  
saturation voltage  
VCE sat IC = 400 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.89  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 9.25 mA, VCE = VGE, Tvj = 25 °C  
4.35  
5.85  
V
VGE = 15 V, VCE = 600 V  
Tvj = 25 °C  
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
37.9  
0.117  
nF  
nF  
Reverse transfer  
capacitance  
Cres  
Collector-emitter cut-off  
ICES  
IGES  
tdon  
VCE = 950 V, VGE = 0 V  
Tvj = 25 °C  
0.1  
mA  
nA  
µs  
current  
Gate-emitter leakage  
current  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
Turn-on delay time  
(inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGon = 5 Ω  
Tvj = 25 °C  
0.145  
0.145  
0.145  
0.068  
0.068  
0.068  
0.914  
0.967  
0.991  
0.054  
0.059  
0.061  
19.3  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGon = 5 Ω  
µs  
µs  
Turn-off delay time  
(inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGoff = 18 Ω  
Fall time (inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGoff = 18 Ω  
µs  
Turn-on energy loss per  
pulse  
Eon  
Eoff  
RthJH  
IC = 400 A, VCE = 500 V,  
Lσ = 35 nH, VGE = 15 V,  
RGon = 5 Ω, di/dt = 4800  
A/µs (Tvj = 150 °C)  
mJ  
mJ  
K/W  
19.3  
19.3  
Turn-off energy loss per  
pulse  
IC = 400 A, VCE = 500 V,  
Lσ = 35 nH, VGE = 15 V,  
RGoff = 18 Ω, dv/dt = 3200  
V/µs (Tvj = 150 °C)  
22.8  
24.5  
25.4  
Thermal resistance,  
junction to heat sink  
per IGBT, λgrease = 3.3 W/(m·K)  
0.182  
(table continues...)  
Datasheet  
4
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
3 IGBT, T2 / T3  
Table 4  
(continued) Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
Unit  
Min.  
Max.  
Temperature under  
switching conditions  
Tvj op  
-40  
150  
°C  
3
IGBT, T2 / T3  
Table 5  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
950  
Unit  
Collector-emitter voltage  
VCES  
ICN  
Tvj = 25 °C  
TH = 65 °C  
V
A
Implemented collector  
current  
400  
Continuous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
320  
800  
20  
A
A
V
Repetitive peak collector  
current  
tp limited by Tvj op  
Gate-emitter peak voltage  
Table 6  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.30  
1.35  
1.35  
4.90  
4.1  
Unit  
Min.  
Max.  
Collector-emitter  
saturation voltage  
VCE sat IC = 400 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.40  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 6.5 mA, VCE = 20 V, Tvj = 25 °C  
4.15  
5.65  
V
VGE = 15 V, VCE = 600 V  
Tvj = 25 °C  
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
0.75  
49.2  
0.228  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
nF  
nF  
Reverse transfer  
capacitance  
Cres  
Collector-emitter cut-off  
ICES  
IGES  
tdon  
VCE = 950 V, VGE = 0 V  
Tvj = 25 °C  
0.1  
mA  
nA  
µs  
current  
Gate-emitter leakage  
current  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
Turn-on delay time  
(inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGon = 12 Ω  
Tvj = 25 °C  
0.445  
0.409  
0.400  
Tvj = 125 °C  
Tvj = 150 °C  
(table continues...)  
Datasheet  
5
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
4 IGBT, T5 / T6  
Table 6  
(continued) Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
0.099  
0.113  
0.117  
2.293  
2.409  
2.439  
0.203  
0.396  
0.452  
13.9  
Unit  
Min.  
Max.  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGon = 12 Ω  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
µs  
Turn-off delay time  
(inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGoff = 27 Ω  
µs  
µs  
Fall time (inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGoff = 27 Ω  
Turn-on energy loss per  
pulse  
Eon  
IC = 400 A, VCE = 500 V,  
Lσ = 64 nH, VGE = 15 V,  
RGon = 12 Ω, di/dt = 2700  
A/µs (Tvj = 150 °C)  
mJ  
mJ  
14.5  
14.9  
Turn-off energy loss per  
pulse  
Eoff  
IC = 400 A, VCE = 500 V,  
Lσ = 64 nH, VGE = 15 V,  
RGoff = 27 Ω, dv/dt = 2060  
V/µs (Tvj = 150 °C)  
60.6  
74.3  
78.1  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per IGBT, λgrease = 3.3 W/(m·K)  
0.254  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
4
IGBT, T5 / T6  
Table 7  
Maximum rated values  
Symbol Note or test condition  
VCES  
Parameter  
Values  
950  
Unit  
Collector-emitter voltage  
Tvj = 25 °C  
TH = 65 °C  
V
A
Implemented collector  
current  
ICN  
400  
Continuous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
200  
800  
20  
A
A
V
Repetitive peak collector  
current  
tp limited by Tvj op  
Gate-emitter peak voltage  
Datasheet  
6
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
4 IGBT, T5 / T6  
Table 8  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
1.85  
2.10  
2.15  
5.10  
0.9  
Unit  
Min.  
Max.  
Collector-emitter  
saturation voltage  
VCE sat IC = 400 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
2.25  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 6.5 mA, VCE = VGE, Tvj = 25 °C  
4.35  
5.85  
V
VGE = 15 V, VCE = 600 V  
Tvj = 25 °C  
µC  
Ω
Internal gate resistor  
Input capacitance  
RGint  
Cies  
0.75  
25.2  
0.078  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
nF  
nF  
Reverse transfer  
capacitance  
Cres  
Collector-emitter cut-off  
ICES  
IGES  
tdon  
VCE = 950 V, VGE = 0 V  
Tvj = 25 °C  
1
mA  
nA  
µs  
current  
Gate-emitter leakage  
current  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
Turn-on delay time  
(inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGon = 8 Ω  
Tvj = 25 °C  
0.167  
0.169  
0.170  
0.096  
0.102  
0.104  
0.862  
0.919  
0.940  
0.054  
0.058  
0.060  
40.8  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGon = 8 Ω  
µs  
µs  
Turn-off delay time  
(inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGoff = 27 Ω  
Fall time (inductive load)  
IC = 400 A, VCE = 500 V,  
VGE = 15 V, RGoff = 27 Ω  
µs  
Turn-on energy loss per  
pulse  
Eon  
Eoff  
RthJH  
IC = 400 A, VCE = 500 V,  
Lσ = 35 nH, VGE = 15 V,  
RGon = 8 Ω, di/dt = 3100  
A/µs (Tvj = 150 °C)  
mJ  
mJ  
K/W  
38  
37.8  
Turn-off energy loss per  
pulse  
IC = 400 A, VCE = 500 V,  
Lσ = 35 nH, VGE = 15 V,  
RGoff = 27 Ω, dv/dt = 3050  
V/µs (Tvj = 150 °C)  
25.2  
28  
29.1  
Thermal resistance,  
junction to heat sink  
per IGBT, λgrease = 3.3 W/(m·K)  
0.281  
(table continues...)  
Datasheet  
7
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
5 Diode, D1 / D4  
Table 8  
(continued) Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
Unit  
Min.  
Max.  
Temperature under  
switching conditions  
Tvj op  
-40  
150  
°C  
5
Diode, D1 / D4  
Table 9  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
Tvj = 25 °C  
950  
V
Continuous DC forward  
current  
IF  
300  
600  
A
A
Repetitive peak forward  
current  
I2t - value  
IFRM  
I2t  
tP = 1 ms  
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 150 °C  
3100  
2900  
A²s  
Table 10  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
2.60  
2.40  
2.35  
102  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IRM  
Qr  
IF = 300 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
2.90  
V
Peak reverse recovery  
current  
VR = 500 V, IF = 300 A,  
VGE = -15 V, -diF/dt =  
3000 A/µs (Tvj = 150 °C)  
A
147  
163  
Recovered charge  
VR = 500 V, IF = 300 A,  
VGE = -15 V, -diF/dt =  
3000 A/µs (Tvj = 150 °C)  
11.3  
20.3  
24.1  
3.37  
5.93  
7.06  
0.597  
µC  
mJ  
Reverse recovery energy  
Erec  
VR = 500 V, IF = 300 A,  
VGE = -15 V, -diF/dt =  
3000 A/µs (Tvj = 150 °C)  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 3.3 W/(m·K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
Datasheet  
8
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
6 Diode, D2 / D3  
6
Diode, D2 / D3  
Table 11  
Maximum rated values  
Parameter  
Symbol Note or test condition  
VRRM  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
950  
V
Continuous DC forward  
current  
IF  
IFRM  
I2t  
300  
600  
A
A
Repetitive peak forward  
current  
I2t - value  
tP = 1 ms  
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 150 °C  
3100  
2900  
A²s  
Table 12  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
2.60  
2.40  
2.35  
146  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IRM  
Qr  
IF = 300 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
2.90  
V
Peak reverse recovery  
current  
VR = 500 V, IF = 300 A,  
VGE = -15 V, -diF/dt =  
2200 A/µs (Tvj = 150 °C)  
A
194  
207  
Recovered charge  
VR = 500 V, IF = 300 A,  
VGE = -15 V, -diF/dt =  
2200 A/µs (Tvj = 150 °C)  
8.45  
17.9  
21.3  
4.22  
8.19  
9.6  
µC  
mJ  
Reverse recovery energy  
Erec  
VR = 500 V, IF = 300 A,  
VGE = -15 V, -diF/dt =  
2200 A/µs (Tvj = 150 °C)  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 3.3 W/(m·K)  
0.393  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
7
Diode, D5 / D6  
Table 13  
Maximum rated values  
Symbol Note or test condition  
VRRM  
Parameter  
Values  
Unit  
Repetitive peak reverse  
voltage  
Tvj = 25 °C  
1200  
V
(table continues...)  
Datasheet  
9
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
8 NTC-Thermistor  
Table 13  
(continued) Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Continuous DC forward  
current  
IF  
160  
A
Repetitive peak forward  
current  
I2t - value  
IFRM  
I2t  
tP = 1 ms  
320  
A
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 150 °C  
3050  
2780  
A²s  
Table 14  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.45  
1.75  
1.85  
71.4  
71.4  
71.4  
1.29  
1.29  
1.29  
0.66  
0.66  
0.66  
0.430  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IRM  
Qr  
IF = 160 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.75  
V
Peak reverse recovery  
current  
VR = 500 V, IF = 160 A,  
VGE = -15 V, -diF/dt =  
3500 A/µs (Tvj = 150 °C)  
A
Recovered charge  
VR = 500 V, IF = 160 A,  
VGE = -15 V, -diF/dt =  
3500 A/µs (Tvj = 150 °C)  
µC  
mJ  
Reverse recovery energy  
Erec  
VR = 500 V, IF = 160 A,  
VGE = -15 V, -diF/dt =  
3500 A/µs (Tvj = 150 °C)  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 3.3 W/(m·K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
8
NTC-Thermistor  
Table 15  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
5
Unit  
Min.  
Max.  
Rated resistance  
Deviation of R100  
Power dissipation  
R25  
ΔR/R  
P25  
TNTC = 25 °C  
kΩ  
%
TNTC = 100 °C, R100 = 493 Ω  
TNTC = 25 °C  
-5  
5
20  
mW  
K
B-value  
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]  
3375  
(table continues...)  
Datasheet  
10  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
8 NTC-Thermistor  
Table 15  
(continued) Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
Unit  
Min.  
Max.  
B-value  
B-value  
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]  
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]  
3411  
K
K
3433  
Note:  
Specification according to the valid application note.  
Datasheet  
11  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
9
Characteristics diagrams  
Output characteristic (typical), IGBT, T1 / T4  
IC = f(VCE  
Output characteristic field (typical), IGBT, T1 / T4  
IC = f(VCE  
)
)
VGE = 15 V  
Tvj = 150 °C  
800  
800  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.0  
1.0  
2.0  
3.0  
4.0  
Transfer characteristic (typical), IGBT, T1 / T4  
IC = f(VGE  
Switching losses (typical), IGBT, T1 / T4  
E = f(IC)  
)
VCE = 20 V  
RGoff = 18 Ω, RGon = 5 Ω, VCE = 500 V, VGE = -15 / 15 V  
800  
70  
60  
50  
40  
30  
20  
10  
0
700  
600  
500  
400  
300  
200  
100  
0
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
0
100 200 300 400 500 600 700 800  
Datasheet  
12  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Switching losses (typical), IGBT, T1 / T4  
E = f(RG)  
Switching times (typical), IGBT, T1 / T4  
t = f(IC)  
IC = 400 A, VCE = 500 V, VGE = -15 / 15 V  
RGoff = 18 Ω, RGon = 5 Ω, VGE = 15 V, VCE = 500 V, Tvj = 150  
°C  
240  
220  
200  
180  
160  
140  
120  
100  
80  
10  
1
0.1  
0.01  
60  
40  
20  
0
0
20  
40  
60  
80 100 120 140 160 180  
0
100 200 300 400 500 600 700 800  
Switching times (typical), IGBT, T1 / T4  
t = f(RG)  
Transient thermal impedance , IGBT, T1 / T4  
Zth = f(t)  
IC = 400 A, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C  
10  
1
1
0.1  
0.1  
0.01  
0.01  
0.001  
0
20  
40  
60  
80 100 120 140 160 180  
0.001  
0.01  
0.1  
1
10  
Datasheet  
13  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Reverse bias safe operating area (RBSOA), IGBT, T1 /  
T4  
Capacity characteristic (typical), IGBT, T1 / T4  
C = f(VCE  
f = 100 kHz, VGE = 0 V, Tvj = 25 °C  
)
IC = f(VCE  
)
RGoff = 18 Ω, VGE = 15 V, Tvj = 150 °C  
1000  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
100  
10  
1
0.1  
0.01  
0
100 200 300 400 500 600 700 800 900 1000  
0
10 20 30 40 50 60 70 80 90 100  
Gate charge characteristic (typical), IGBT, T1 / T4  
VGE = f(QG)  
Output characteristic (typical), IGBT, T2 / T3  
IC = f(VCE  
)
IC = 600 A, Tvj = 25 °C  
VGE = 15 V  
15  
10  
5
800  
700  
600  
500  
400  
300  
200  
100  
0
0
-5  
-10  
-15  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
0.0  
0.5  
1.0  
1.5  
2.0  
Datasheet  
14  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Output characteristic field (typical), IGBT, T2 / T3  
Transfer characteristic (typical), IGBT, T2 / T3  
IC = f(VGE  
IC = f(VCE  
)
)
Tvj = 150 °C  
VCE = 20 V  
800  
800  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
4.0  
5.0  
6.0  
7.0  
8.0  
Switching losses (typical), IGBT, T2 / T3  
E = f(IC)  
Switching losses (typical), IGBT, T2 / T3  
E = f(RG)  
RGoff = 27 Ω, RGon = 12 Ω, VCE = 500 V, VGE = -15 / 15 V  
IC = 400 A, VCE = 500 V, VGE = -15 / 15 V  
180  
400  
360  
320  
280  
240  
200  
160  
120  
80  
150  
120  
90  
60  
30  
0
40  
0
0
100 200 300 400 500 600 700 800  
0
30  
60  
90 120 150 180 210 240 270  
Datasheet  
15  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Switching times (typical), IGBT, T2 / T3  
Switching times (typical), IGBT, T2 / T3  
t = f(IC)  
t = f(RG)  
RGoff = 27 Ω, RGon = 12 Ω, VCE = 500 V, VGE = -15 / 15 V, Tvj = IC = 400 A, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C  
150 °C  
100  
10  
100  
10  
1
1
0.1  
0.1  
0.01  
0.01  
0.001  
0
100 200 300 400 500 600 700 800  
0
30 60 90 120 150 180 210 240 270 300  
Transient thermal impedance , IGBT, T2 / T3  
Zth = f(t)  
Reverse bias safe operating area (RBSOA), IGBT, T2 /  
T3  
IC = f(VCE  
)
RGoff = 27 Ω, VGE = 15 V, Tvj = 150 °C  
1
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
0.1  
0.01  
0.001  
0
100 200 300 400 500 600 700 800 900 1000  
0.001  
0.01  
0.1  
1
10  
Datasheet  
16  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Capacity characteristic (typical), IGBT, T2 / T3  
Gate charge characteristic (typical), IGBT, T2 / T3  
VGE = f(QG)  
C = f(VCE  
)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C  
IC = 400 A, Tvj = 25 °C  
1000  
15  
10  
5
100  
10  
0
1
-5  
0.1  
0.01  
-10  
-15  
0
10 20 30 40 50 60 70 80 90 100  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
Output characteristic (typical), IGBT, T5 / T6  
Output characteristic field (typical), IGBT, T5 / T6  
IC = f(VCE  
)
IC = f(VCE)  
VGE = 15 V  
Tvj = 150 °C  
800  
800  
700  
600  
500  
400  
300  
200  
100  
0
700  
600  
500  
400  
300  
200  
100  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Datasheet  
17  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Transfer characteristic (typical), IGBT, T5 / T6  
Switching losses (typical), IGBT, T5 / T6  
E = f(IC)  
IC = f(VGE  
)
VCE = 20 V  
RGoff = 27 Ω, RGon = 8 Ω, VCE = 500 V, VGE = -15 / 15 V  
600  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
500  
400  
300  
200  
100  
0
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
0
100 200 300 400 500 600 700 800  
Switching losses (typical), IGBT, T5 / T6  
E = f(RG)  
Switching times (typical), IGBT, T5 / T6  
t = f(IC)  
IC = 400 A, VCE = 500 V, VGE = -15 / 15 V  
RGoff = 27 Ω, RGon = 8 Ω, VGE = 15 V, VCE = 500 V, Tvj = 150  
°C  
300  
270  
240  
210  
180  
150  
120  
90  
10  
1
0.1  
0.01  
60  
30  
0
0
30  
60  
90 120 150 180 210 240 270  
0
100 200 300 400 500 600 700 800  
Datasheet  
18  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Switching times (typical), IGBT, T5 / T6  
t = f(RG)  
Transient thermal impedance , IGBT, T5 / T6  
Zth = f(t)  
IC = 400 A, VCE = 500 V, Tvj = 150 °C, VGE = 15 V  
10  
1
1
0.1  
0.1  
0.01  
0.01  
0.001  
0
30  
60  
90 120 150 180 210 240 270  
0.001  
0.01  
0.1  
1
10  
Reverse bias safe operating area (RBSOA), IGBT, T5 /  
T6  
Capacity characteristic (typical), IGBT, T5 / T6  
C = f(VCE  
f = 100 kHz, VGE = 0 V, Tvj = 25 °C  
)
IC = f(VCE  
)
RGoff = 27 Ω, VGE = 15 V, Tvj = 150 °C  
1000  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
100  
10  
1
0.1  
0.01  
0
100 200 300 400 500 600 700 800 900 1000  
0
10 20 30 40 50 60 70 80 90 100  
Datasheet  
19  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Gate charge characteristic (typical), IGBT, T5 / T6  
VGE = f(QG)  
Forward characteristic (typical), Diode, D1 / D4  
IF = f(VF)  
IC = 400 A, Tvj = 25 °C  
15  
10  
5
600  
500  
400  
300  
200  
100  
0
0
-5  
-10  
-15  
0.00  
0.25  
0.50  
0.75  
1.00  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
Switching losses (typical), Diode, D1 / D4  
Erec = f(IF)  
Switching losses (typical), Diode, D1 / D4  
Erec = f(RG)  
RG = 8 Ω, VR = 500 V  
IF = 300 A, VR = 500 V  
10  
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
0
100  
200  
300  
400  
500  
600  
0
10  
20  
30  
40  
50  
60  
70  
80  
Datasheet  
20  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Transient thermal impedance, Diode, D1 / D4  
Forward characteristic (typical), Diode, D2 / D3  
Zth = f(t)  
IF = f(VF)  
1
600  
500  
400  
300  
200  
100  
0
0.1  
0.01  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0.001  
0.01  
0.1  
1
10  
Switching losses (typical), Diode, D2 / D3  
Erec = f(IF)  
Switching losses (typical), Diode, D2 / D3  
Erec = f(RG)  
RG = 12 Ω, VR = 500 V  
IF = 300 A, VR = 500 V  
16  
14  
12  
10  
8
12  
10  
8
6
6
4
4
2
2
0
0
0
100  
200  
300  
400  
500  
600  
0
10 20 30 40 50 60 70 80 90 100 110 120  
Datasheet  
21  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Transient thermal impedance, Diode, D2 / D3  
Forward characteristic (typical), Diode, D5 / D6  
Zth = f(t)  
IF = f(VF)  
1
320  
280  
240  
200  
160  
120  
80  
0.1  
40  
0
0.01  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
0.001  
0.01  
0.1  
1
10  
Switching losses (typical), Diode, D5 / D6  
Erec = f(IF)  
Switching losses (typical), Diode, D5 / D6  
Erec = f(RG)  
RG = 5 Ω, VR = 500 V  
IF = 160 A, VR = 500 V  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
0
40  
80  
120 160 200 240 280 320  
0
5
10 15 20 25 30 35 40 45 50  
Datasheet  
22  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
9 Characteristics diagrams  
Transient thermal impedance, Diode, D5 / D6  
Zth = f(t)  
Temperature characteristic (typical), NTC-Thermistor  
R = f(TNTC  
)
1
100000  
10000  
1000  
0.1  
100  
0.01  
0
25  
50  
75  
100  
125  
150  
0.001  
0.01  
0.1  
1
10  
100  
Datasheet  
23  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
10 Circuit diagram  
10  
Circuit diagram  
P
T1  
G1  
D1  
HE1  
HC5  
T5  
HC2  
X1  
NTC  
X2  
T2  
G2  
-
-
G5  
D2  
D5  
D6  
HE5  
M1  
HE2  
AC  
M2  
X3  
NTC  
X4  
T6  
G6  
T3  
G3  
D3  
D4  
HE6  
HE3  
HC4  
4
0
.
T4  
G4  
5
6
3
3
7
1
HE4  
0
0
W
N
Figure 1  
Datasheet  
24  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
11 Package outlines  
11  
Package outlines  
dimensioned f®r EJOT Delta PT WN5451 25;  
choose length according to PCB-thickness;  
max. screw depth 8,5 mm  
4x screws  
w
e
r
c
s
26  
14  
5
M
r
o
f
d
e
n
o
i
s
n
e
m
i
d
5
,
0
0
B
2
6
14  
26  
)
4
,
3
P
(
0
5
5
5
5
,
,
,
,
7
7
4
4
6
6
6
6
(139,5) distance for threaded holes in heatsink  
150B0,5  
module labeling  
1
,
0
)
2
)
B
1
4
(
2
,
,
6
2
1
1
(
recommended design height  
(1) mid of pressfit-zone  
r
e
h
s
a
according to screw head  
w
d
a
e
h
w
P
N
M1  
M2  
(26)  
24  
20,8  
17,6  
e
r
HE3  
G3  
HC4  
c
s
o
t
g
n
i
d
r
X3  
X4  
o
11,2  
c
c
a
G5  
HE1  
HE5  
G1  
4,8  
0
HE4  
HC2  
G4  
4,8  
11,2  
14,4  
17,6  
20,8  
24  
HE6  
G6  
X2  
X1  
G2  
HC4  
HC5  
HE2  
AC  
(26)  
6
0
.
5
5
6
2
9
)
)
0
1
5
5
5
5
5
5
5
5
5
5
6
8
6
2
2
6
8
6
5
5
5
5
5
5
5
5
5
5
4
4
5
5
,
,
,
,
,
,
,
,
1
1
1
1
1
1
1
0
,
,
9
7
5
3
9
7
5
3
5
7
9
3
5
7
9
,
,
,
,
,
,
,
,
,
,
,
,
2
9
3
3
9
2
,
,
,
,
,
,
,
,
6
6
0
4
4
6
0
1
1
6
4
4
2
9
6
3
6
3
0
7
0
3
6
3
6
9
2
6
6
5
5
W
4
2
2
(
5
3
3
3
2
3
3
3
5
(
4
4
4
4
4
4
- Details about hole specification for contacts refer to AN2009-01 chapter 2  
- Copper thickness in hole 25~50um  
Figure 2  
Datasheet  
25  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
12 Module label code  
12  
Module label code  
Module label code  
Code format  
Encoding  
Data Matrix  
ASCII text  
Barcode Code128  
Code Set A  
23 digits  
Symbol size  
Standard  
16x16  
IEC24720 and IEC16022  
IEC8859-1  
Code content  
Content  
Digit  
1 – 5  
6 - 11  
12 - 19  
20 – 21  
22 – 23  
Example  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
71549  
142846  
55054991  
15  
30  
Example  
71549142846550549911530  
71549142846550549911530  
Figure 3  
Datasheet  
26  
Revision 1.00  
2022-05-06  
F3L600R10W4S7F_C22  
™
EasyPACK module  
Revision history  
Revision history  
Document revision  
Date of release Description of changes  
0.10  
1.00  
2021-08-17  
2022-05-06  
Target datasheet  
Final datasheet  
Datasheet  
27  
Revision 1.00  
2022-05-06  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
Edition 2022-05-06  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
Important notice  
Please note that this product is not qualified  
according to the AEC Q100 or AEC Q101 documents  
of the Automotive Electronics Council.  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
third party.  
In addition, any information given in this document is  
subject to customer’s compliance with its obligations  
stated in this document and any applicable legal  
requirements, norms and standards concerning  
customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
Warnings  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies office.  
©
2022 Infineon Technologies AG  
All Rights Reserved.  
Except as otherwise explicitly approved by Infineon  
Technologies in  
a written document signed by  
Do you have a question about any  
aspect of this document?  
Email: erratum@infineon.com  
authorized representatives of Infineon Technologies,  
Infineon Technologies’ products may not be used in  
any applications where a failure of the product or  
any consequences of the use thereof can reasonably  
be expected to result in personal injury.  
Document reference  
IFX-AAK433-002  
The data contained in this document is exclusively  
intended for technically trained staff. It is the  
responsibility of customer’s technical departments to  
evaluate the suitability of the product for the intended  
application and the completeness of the product  
information given in this document with respect to such  
application.  

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