F3L8MR12W2M1HP_B11 [INFINEON]
TIM,PressFIT;
| 型号： | F3L8MR12W2M1HP_B11 |
| 厂家： | 
Infineon |
| 描述： | TIM,PressFIT |
| 文件： | 总22页 (文件大小：1398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
F3L8MR12W2M1HP_B11
™
EasyPACK module
™
™
EasyPACK module with CoolSiC Trench MOSFET and PressFIT / NTC / TIM
Features
• Electrical features
- VDSS = 1200 V
- IDN = 100 A / IDRM = 200 A
- High current density
- Low switching losses
• Mechanical features
- Rugged mounting due to integrated mounting clamps
- Integrated NTC temperature sensor
- PressFIT contact technology
- Pre-applied thermal interface material
Potential applications
• Solar applications
• Three-level applications
• DC charger for EV
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
IGBT, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Diode, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
1
2
3
4
5
6
7
8
9
10
Datasheet
2
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
3.0
Unit
Isolation test voltage
Internal isolation
Creepage distance
Creepage distance
Clearance
VISOL
RMS, f = 50 Hz, t = 60 s
kV
basic insulation (class 1, IEC 61140)
Al2O3
11.5
6.3
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
10.0
5.0
Clearance
Comparative tracking
index
>200
Relative thermal index
(electrical)
RTI
housing
140
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
12
Unit
Min.
Max.
Stray inductance module
LsCE
nH
Module lead resistance,
terminals - chip
RCC'+EE' TH=25°C, per switch
0.4
mΩ
Storage temperature
Tstg
-40
40
125
125
°C
°C
Maximum baseplate
operation temperature
TBPmax
Mounting force per clamp
Weight
F
80
N
g
G
39
Note:
The current under continuous operation is limited to 25 A rms per connector pin.
Storage and shipment of modules with TIM => see AN2012-07.
2
MOSFET
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
100
Unit
Drain-source voltage
VDSS
IDN
Tvj = 25 °C
TH = 65 °C
V
A
A
Implemented drain current
Continuous DC drain
current
IDDC
Tvj = 175 °C, VGS = 18 V
85
Repetitive peak drain
current
IDRM
verified by design, tp limited by Tvjmax
200
A
(table continues...)
Datasheet
3
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
2 MOSFET
Table 3
(continued) Maximum rated values
Symbol Note or test condition
Parameter
Values
Unit
Gate-source voltage, max.
transient voltage
VGS
D<0.01
-10/23
V
Gate-source voltage, max.
static voltage
VGS
-7/20
V
Table 4
Recommended values
Symbol Note or test condition
VGS(on)
VGS(off)
Parameter
Values
15...18
-5...0
Unit
On-state gate voltage
V
V
Off-state gate voltage
Table 5
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
8.1
Unit
Min.
Max.
Drain-source on-resistance RDS(on) ID = 100 A
VGS = 18 V,
Tvj = 25 °C
12
mΩ
VGS = 18 V,
Tvj = 125 °C
13.1
17.4
9.7
VGS = 18 V,
Tvj = 175 °C
VGS = 15 V,
Tvj = 25 °C
Gate threshold voltage
VGS(th) ID = 40 mA, VDS = VGS, Tvj = 25 °C, (tested afeꢀ 3.45
4.3
5.15
V
1ms pulse at VGS = +20 V)
Total gate charge
Internal gate resistor
Input capacitance
QG
RGint
CISS
VDS = 800 V, VGS = -3/18 V
Tvj = 25 °C
0.297
2.1
µC
Ω
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
8.8
nF
Output capacitance
COSS
Crss
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
0.42
nF
nF
Reverse transfer
capacitance
f = 100 kHz, VDS = 800 V, Tvj = 25 °C
VGS = 0 V
0.028
COSS stored energy
EOSS
IDSS
VDS = 800 V, VGS = -3/18 V, Tvj = 25 °C
172
µJ
µA
Drain-source leakage
current
VDS = 1200 V, VGS = -3 V
Tvj = 25 °C
0.06
380
400
Gate-source leakage
current
IGSS
VDS = 0 V, Tvj = 25 °C
VGS = 20 V
nA
(table continues...)
Datasheet
4
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
3 Body diode
Table 5
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
83
Unit
Min.
Max.
Turn-on delay time
(inductive load)
td on
ID = 100 A, RGon = 15 Ω,
VDS = 400 V, VGS = -3/18 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
ns
73
70
Rise time (inductive load)
tr
ID = 100 A, RGon = 15 Ω,
VDS = 400 V, VGS = -3/18 V
106
111
116
74
ns
ns
Tuꢀn-off delay time
(inductive load)
td off
ID = 100 A, RGoff = 3.3 Ω, Tvj = 25 °C
VDS = 400 V, VGS = -3/18 V
Tvj = 125 °C
80
Tvj = 175 °C
84
Fall time (inductive load)
tf
ID = 100 A, RGoff = 3.3 Ω, Tvj = 25 °C
17
ns
VDS = 400 V, VGS = -3/18 V
Tvj = 125 °C
16
Tvj = 175 °C
16
Turn-on energy loss per
pulse
Eon
ID = 100 A, VDS = 400 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
3.28
3.97
4.33
0.32
0.38
0.42
mJ
mJ
L = 27 nH, VGS = -3/18 V,
σ
RGon = 15 Ω, di/dt = 2
kA/µs (Tvj = 175 °C)
Tuꢀn-off energy loss per
pulse
Eoff
ID = 100 A, VDS = 400 V,
L = 27 nH, VGS = -3/18 V,
σ
RGoff = 3.3 Ω, dv/dt = 20.1
kV/µs (Tvj = 175 °C)
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per MOSFET, Valid with IFX pre-applied
Thermal Interface Material
0.581 K/W
175 °C
Temperature under
switching conditions
-40
Note:
The selection of positive and negative gate-source voltages impacts the long-term behavior of the MOSFET
and body diode. The design guidelines described in Application Note AN 2018-09 must be considered to
ensure sound operation of the device over the planned lifetime.
Tvj op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed
specifications, please refer to AN 2021-13.
3
Body diode
Table 6
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
DC body diode forward
current
ISD
Tvj = 175 °C, VGS = -3 V
TH = 65 °C
32
A
Datasheet
5
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
4 IGBT, 3-Level
Table 7
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
4.2
Unit
Min.
Max.
Forward voltage
VSD
ISD = 100 A, VGS = -3 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
5.35
V
3.9
3.8
4
IGBT, 3-Level
Table 8
Maximum rated values
Symbol Note or test condition
VCES
Parameter
Values
650
Unit
Collector-emitter voltage
Tvj = 25 °C
TH = 65 °C
V
A
Implemented collector
current
ICN
200
Continuous DC collector
current
ICDC
ICRM
VGES
Tvj max = 175 °C
90
200
20
A
A
V
Repetitive peak collector
current
tp limited by Tvj op
Gate-emitter peak voltage
Table 9
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.17
1.20
1.21
4
Unit
Min.
Max.
Collector-emitter
saturation voltage
VCE sat IC = 100 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
0.74
1.59
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 2 mA, VCE = VGE, Tvj = 25 °C
3.25
4.75
V
VGE = 15 V, VCE = 400 V
Tvj = 25 °C
0.84
0
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
14.3
0.05
nF
nF
Reverse transfer
capacitance
Cres
Collector-emitter cut-off
ICES
IGES
tdon
VCE = 650 V, VGE = 0 V
Tvj = 25 °C
1
mA
nA
µs
current
Gate-emitter leakage
current
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
Turn-on delay time
(inductive load)
IC = 100 A, VCE = 400 V,
VGE = 15 V, RGon = 2.7 Ω
Tvj = 25 °C
0.014
0.015
0.015
Tvj = 125 °C
Tvj = 150 °C
(table continues...)
Datasheet
6
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
5 Diode, 3-Level
Table 9
(continued) Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
Unit
Min.
Max.
Rise time (inductive load)
tr
tdoff
tf
IC = 100 A, VCE = 400 V,
VGE = 15 V, RGon = 2.7 Ω
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
0.009
0.010
0.011
0.650
0.680
0.700
0.023
0.045
0.055
0.264
0.394
0.438
1.7
µs
Tuꢀn-off delay time
(inductive load)
IC = 100 A, VCE = 400 V,
VGE = 15 V, RGoff = 39 Ω
µs
µs
Fall time (inductive load)
IC = 100 A, VCE = 400 V,
VGE = 15 V, RGoff = 39 Ω
Turn-on energy loss per
pulse
Eon
IC = 100 A, VCE = 400 V,
mJ
mJ
L = 27 nH, VGE = 15 V,
σ
RGon = 2.7 Ω, di/dt =
7600 A/µs (Tvj = 150 °C)
Tuꢀn-off energy loss per
pulse
Eoff
IC = 100 A, VCE = 400 V,
L = 27 nH, VGE = 15 V,
σ
2.05
RGoff = 39 Ω, dv/dt = 4800
2.31
V/µs (Tvj = 150 °C)
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per IGBT, Valid with IFX pre-applied Thermal
Interface Material
0.723 K/W
Temperature under
switching conditions
-40
150
°C
5
Diode, 3-Level
Table 10
Maximum rated values
Symbol Note or test condition
VRRM
Parameter
Values
Unit
Repetitive peak reverse
voltage
Tvj = 25 °C
650
V
Implemented forward
current
IFN
IF
IFRM
I2t
150
100
200
A
A
Continuous DC forward
current
Repetitive peak forward
current
I2t - value
tP = 1 ms
A
VR = 0 V, tP = 10 ms
Tvj = 125 °C
Tvj = 150 °C
1270
1480
A²s
Datasheet
7
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
6 NTC-Thermistor
Table 11
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
1.35
1.29
1.25
64.2
99.8
114
Unit
Min.
Max.
Forward voltage
VF
IRM
Qr
IF = 100 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 150 °C
0.74
1.86
V
Peak reverse recovery
current
IF = 100 A, VR = 400 V,
VGE = -15 V, -diF/dt =
2000 A/µs (Tvj = 150 °C)
A
Recovered charge
IF = 100 A, VR = 400 V,
VGE = -15 V, -diF/dt =
2000 A/µs (Tvj = 150 °C)
3.99
7.07
9.8
µC
mJ
Reverse recovery energy
Erec
IF = 100 A, VR = 400 V,
VGE = -15 V, -diF/dt =
2000 A/µs (Tvj = 150 °C)
0.45
1
1.35
Thermal resistance,
junction to heat sink
RthJH
Tvj op
per diode, Valid with IFX pre-applied
Thermal Interface Material
0.802 K/W
Temperature under
switching conditions
-40
150
°C
6
NTC-Thermistor
Table 12
Characteristic values
Symbol Note or test condition
Parameter
Values
Typ.
5
Unit
Min.
Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
8
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
7
Characteristics diagrams
output characteristic (typical), MOSFET
ID = f(VDS
output characteristic (typical), MOSFET
ID = f(VDS
)
)
VGS = 18 V
VGS = 15 V
200
200
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Drain source on-resistance (typical), MOSFET
Drain source on-resistance (typical), MOSFET
RDS(on) = f(ID)
RDS(on) = f(Tvj)
VGS = 18 V
ID = 100 A
20
19
18
17
16
15
14
13
12
11
10
9
20
18
16
14
12
10
8
8
6
7
4
6
-50 -25
0
25
50
75 100 125 150 175
0
20 40 60 80 100 120 140 160 180 200
Datasheet
9
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Output characteristic field (typical), MOSFET
Transfer characteristic (typical), MOSFET
ID = f(VGS
ID = f(VDS
)
)
Tvj = 175 °C
VDS = 20 V
200
200
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
4
5
6
7
8
9
10
11
Gate-source threshold voltage (typical), MOSFET
VGS(th) = f(Tvj)
Gate charge characteristic (typical), MOSFET
VGS = f(QG)
VGS = VDS
ID = 100 A, Tvj = 25 °C
5.0
4.8
4.6
4.4
4.2
4.0
3.8
3.6
3.4
18
15
12
9
6
3
0
-3
0.00
-50 -25
0
25
50
75 100 125 150 175
0.05
0.10
0.15
0.20
0.25
0.30
Datasheet
10
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Capacity characteristic (typical), MOSFET
Forward characteristic body diode (typical), MOSFET
ISD = f(VSD
C = f(VDS
)
)
f = 100 kHz, Tvj = 25 °C, VGS = 0 V
Tvj = 25 °C
10
200
180
160
140
120
100
80
1
0.1
60
40
20
0.01
0
0.1
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward voltage of body diode (typical), MOSFET
VSD = f(Tvj)
Switching losses (typical), MOSFET
E = f(ID)
ISD = 100 A
RGoff = 3.3 Ω, RGon = 15 Ω, VDS = 400 V, VGS = -3/18 V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
7
6
5
4
3
2
1
0
25
50
75
100
125
150
175
0
20 40 60 80 100 120 140 160 180 200
Datasheet
11
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Switching losses (typical), MOSFET
E = f(RG)
Switching times (typical), MOSFET
t = f(ID)
VDS = 400 V, ID = 100 A, VGS = -3/18 V
RGoff = 3.3 Ω, RGon = 15 Ω, VDS = 400 V, Tvj = 175 °C, VGS
-3/18 V
=
20
18
16
14
12
10
8
1
0.1
6
4
2
0
0.01
0
15 30 45 60 75 90 105 120 135 150
0
20 40 60 80 100 120 140 160 180 200
Switching times (typical), MOSFET
t = f(RG)
Current slope (typical), MOSFET
di/dt = f(RG)
VDS = 400 V, ID = 100 A, Tvj = 175 °C, VGS = -3/18 V
VDS = 400 V, ID = 100 A, VGS = -3/18 V
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1
0.1
0.01
0
15 30 45 60 75 90 105 120 135 150
15
30
45
60
75
90 105 120 135 150
Datasheet
12
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Voltage slope (typical), MOSFET
dv/dt = f(RG)
Reverse bias safe operating area (RBSOA), MOSFET
ID = f(VDS
)
VDS = 400 V, ID = 100 A, VGS = -3/18 V
RGoff = 3.3 Ω, Tvj = 175 °C, VGS = -3/18 V
22
20
18
16
14
12
10
8
220
200
180
160
140
120
100
80
60
6
40
4
20
2
0
3
6
9
12 15 18 21 24 27 30 33
0
200
400
600
800 1000 1200 1400
Transient thermal impedance, MOSFET
Zth = f(t)
Output characteristic (typical), IGBT, 3-Level
IC = f(VCE
)
VGE = 15 V
1
200
180
160
140
120
100
80
0.1
60
40
20
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
0.01
0.1
1
10
Datasheet
13
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Output characteristic field (typical), IGBT, 3-Level
Transfer characteristic (typical), IGBT, 3-Level
IC = f(VGE
IC = f(VCE
)
)
Tvj = 150 °C
VCE = 20 V
200
200
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
Switching losses (typical), IGBT, 3-Level
E = f(IC)
Switching losses (typical), IGBT, 3-Level
E = f(RG)
RGoff = 39 Ω, RGon = 2.7 Ω, VCE = 400 V, VGE = -15 / +15 V
IC = 100 A, VCE = 400 V, VGE = -15 / +15 V
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
7
6
5
4
3
2
1
0
0
20 40 60 80 100 120 140 160 180 200
0
15 30 45 60 75 90 105 120 135 150
Datasheet
14
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Switching times (typical), IGBT, 3-Level
t = f(IC)
Switching times (typical), IGBT, 3-Level
t = f(RG)
RGoff = 39 Ω, RGon = 2.7 Ω, RGon = 2.7 Ω, VCE = 400 V, VGE
15 V, Tvj = 150 °C
=
IC = 100 A, VCE = 400 V, VGE = -15 / +15 V, Tvj = 150 °C
10
1
10
1
0.1
0.1
0.01
0.01
0.001
0
20 40 60 80 100 120 140 160 180 200
0
15 30 45 60 75 90 105 120 135 150
Transient thermal impedance, IGBT, 3-Level
Zth = f(t)
Reverse bias safe operating area (RBSOA), IGBT, 3-
Level
IC = f(VCE
)
Tvj = 150 °C, RGoff = 39 Ω, VGE = 15 V
1
220
200
180
160
140
120
100
80
0.1
60
40
20
0
0.01
0
100
200
300
400
500
600
700
0.001
0.01
0.1
1
10
Datasheet
15
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Capacity characteristic (typical), IGBT, 3-Level
Gate charge characteristic (typical), IGBT, 3-Level
VGE = f(QG)
C = f(VCE
)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
IC = 100 A, Tvj = 25 °C
100
15
10
5
10
1
0
-5
0.1
0.01
-10
-15
0
10 20 30 40 50 60 70 80 90 100
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward characteristic (typical), Diode, 3-Level
IF = f(VF)
Switching losses (typical), Diode, 3-Level
Erec = f(IF)
RG = 15 Ω, VR = 400 V
200
180
160
140
120
100
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
20 40 60 80 100 120 140 160 180 200
Datasheet
16
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
7 Characteristics diagrams
Switching losses (typical), Diode, 3-Level
Erec = f(RG)
Transient thermal impedance, Diode, 3-Level
Zth = f(t)
IF = 100 A, VR = 400 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
0.1
0.01
0
15 30 45 60 75 90 105 120 135 150
0.001
0.01
0.1
1
10
Temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
Datasheet
17
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
8 Circuit diagram
8
Circuit diagram
J
Figure 1
Datasheet
18
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
9 Package outlines
9
Package outlines
Figure 2
Datasheet
19
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
10 Module label code
10
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
Datasheet
20
Revision 1.10
2022-03-10
F3L8MR12W2M1HP_B11
™
EasyPACK module
Revision history
Revision history
Document revision
Date of release Description of changes
0.10
1.00
1.10
2021-04-07
2022-03-09
2022-03-10
Final datasheet
Final datasheet
Datasheet
21
Revision 1.10
2022-03-10
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-03-10
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgaꢀantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2022 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
Document reference
IFX-ABA497-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
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