FD200H06A5BT [INFINEON]

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1;
FD200H06A5BT
型号: FD200H06A5BT
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1

超快速恢复二极管
文件: 总2页 (文件大小:53K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Data Sheet PD-20534 11/00  
FD200H06A5BT  
Fred Die in Wafer Form  
a
c
0.35 ± 0.01  
(0.014 ± 0.0004)  
NOTES:  
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS  
(INCHES).  
2. CONTROLLING DIMENSION (INCH):  
C
3. DIMENSIONS AND TOLERANCES:  
a = 5.080 ± 0.05  
A
(0.200 ± 0.002)  
b = 5.08 ± 0.05  
(0.200 ± 0.002)  
c = 4.420 ± 0.003  
(0.174 ± 0.0001)  
d = 4.420 ± 0.003  
(0.174 ± 0.0001)  
40 (1.57)  
4. LETTER DESIGNATION:  
A = Anode (Top Metal)  
C = Cathode (Back Metal)  
Wafer flat alligned with  
side b of the die  
5. SAWING:  
Recommended Blade  
SEMITEC S1025 QS00 Blade  
6. MINIMUM ORDER QUANTITY:  
300 die  
Ø
125 (4.92)  
NOT TO SCALE  
www.irf.com  
1
FD200H06A5BT  
Preliminary Data Sheet PD-20534 11/00  
Electrical Characteristics (Wafer Form)  
Parameters  
Units  
TestConditions  
TJ = 25°C, I F = 30 A  
VFM  
MaximumForwardVoltage  
2.3V  
600V  
100µA  
20 ns  
VRRM MimunumReverseBreakdownVoltage  
TJ = 25°C, I RRM = 200 µA  
IRM  
trr  
Max. ReverseLeakageCurrent  
Typ. Reverse Recovery Time  
TJ = 25°C, V RRM = 600 V  
IF = 1A, di/ dt = 100A/µs, VR = 30 V  
Mechanical Data  
NominalBackMetalComposition, Thickness  
Cr - Ni - Ag (1 KA - 2 KA - 3 KA)  
99% Al, 1% Si (3 microns)  
NominalFrontMetalComposition, Thickness  
ChipDimensions  
0.200" x 0.200" (see drawing)  
0.25mmdiameterminimum  
Reject Ink Dot Size  
RecommendedStorageEnvironment  
Storageinoriginalcontainer, indessicated  
nitrogen,withnocontamination  
Ordering Information Table  
Device Code  
FD 200  
H
06  
A
5
B
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Fred Die  
Chip Dimension in Mils:  
Process  
200 = 200x200 square  
H
=
=
=
HyperFast  
600V  
Voltage code Vrrm (*100) eg: 06  
Chip surface metallization:  
Wafer diameter in inches  
Packaging:  
A
Aluminium (anode), Silver (cathode)  
B
=
Inked Probed Unsawn Wafer (Wafer in box)  
2
www.irf.com  

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