FF150R12KS4 [INFINEON]

62mm C-Series module with the fast IGBT2 for high-frequency switching; 62毫米C系列模块,具有快速IGBT2高频开关
FF150R12KS4
型号: FF150R12KS4
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

62mm C-Series module with the fast IGBT2 for high-frequency switching
62毫米C系列模块,具有快速IGBT2高频开关

晶体 开关 晶体管 双极性晶体管 栅 局域网
文件: 总9页 (文件大小:1592K)
下载:  下载PDF数据表文档文件

FF150R12KS4_B2

62mm C-Series module with the fast IGBT2 for high-frequency switching

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17 INFINEON

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2 INFINEON

FF150R12KS4B2HOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FF150R12KT3G

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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24 INFINEON

FF150R12KT3GHOSA1

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

FF150R12ME3G

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode

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54 INFINEON

FF150R12MS4G

EconoDUAL3 module with fast IGBT2 for high switching frequency

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41 INFINEON

FF150R12MS4GBOSA1

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF150R12MS4GENG

Insulated Gate Bipolar Transistor,

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0 INFINEON

FF150R12MT4

EconoDUAL?2 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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38 INFINEON

FF150R12MT4BOMA1

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-10

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0 INFINEON

FF150R12RT4

34mm Module with fast Trench/Feldstopp IGBT4 and Emitter Controlled 4 diode

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204 INFINEON

FF150R12YT3

IGBT-modules

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80 EUPEC

FF150R12YT3BOMA1

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

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2 INFINEON

FF150R17KE4

62mm C-Series module with Trench/Feldstopp Trench/Feldstopp IGBT4 and Emitter Controlled Diode

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142 INFINEON