FF450R12ME4_B11 [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | FF450R12ME4_B11 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总9页 (文件大小：928K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
EconoDUAL™3ꢀ模块ꢀ采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管
带有pressfit压接管脚和温度检测NTC
EconoDUAL™3ꢀmoduleꢀwithꢀTrench/FieldstopꢀIGBT4ꢀandꢀEmitterꢀControlledꢀHEꢀdiodeꢀandꢀPressFITꢀ/ꢀNTC
初步数据ꢀ/ꢀPreliminaryꢀData
VCES = 1200V
IC nom = 450A / ICRM = 900A
典型应用
TypicalꢀApplications
• MotorꢀDrives
• 电机传动
• 伺服驱动器
• UPS系统
• 风力发电机
• ServoꢀDrives
• UPSꢀSystems
• WindꢀTurbines
电气特性
ElectricalꢀFeatures
• LowꢀVCEsat
• 低ꢀꢀVCEsat
• Tvjꢀopꢀ=ꢀ150°C
• Tvjꢀopꢀ=ꢀ150°C
机械特性
MechanicalꢀFeatures
• PressFITꢀ压接技术
• 标封装
• PressFITꢀContactꢀTechnology
• StandardꢀHousing
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
ꢀDigit
ꢀꢀ1ꢀ-ꢀꢀꢀ5
ꢀꢀ6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
DMXꢀ-ꢀCode
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
ULꢀapprovedꢀ(E83335)
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
450
675
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
900
2250
+/-20
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,75 2,10
2,00
2,05
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 17,0 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
5,2
5,8
3,30
1,7
28,0
1,55
ꢀ
6,4
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
3,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,19
0,22
0,22
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGon = 1,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,06
0,07
0,07
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,49
0,58
0,62
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 450 A, VCE = 600 V
VGE = ±15 V
RGoff = 1,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,08
0,11
0,12
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 450 A, VCE = 600 V, LS = 35 nH
VGE = ±15 V, di/dt = 7000 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 1,3 Ω
Tvj = 25°C
15,0
26,0
28,5
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 450 A, VCE = 600 V, LS = 35 nH
VGE = ±15 V, du/dt = 3100 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 1,3 Ω
Tvj = 25°C
38,0
55,5
61,5
mJ
mJ
mJ
ꢀ
ꢀ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
ꢀ
tP ≤ 10 µs, Tvj = 150°C
1800
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,066 K/W
K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,03
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
°C
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
1200
450
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
ꢀ
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
900
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
35000
28500
A²s
A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,65 2,10
1,65
1,65
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 450 A, - diF/dt = 7000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
VGE = -15 V
450
A
A
A
Tvj = 125°C
Tvj = 150°C
ꢀ
ꢀ
ꢀ
550
575
ꢀ
ꢀ
ꢀ
恢复电荷
Recoveredꢀcharge
IF = 450 A, - diF/dt = 7000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
VGE = -15 V
48,0
92,0
105
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 450 A, - diF/dt = 7000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 600 V
VGE = -15 V
26,5
48,5
55,0
mJ
mJ
mJ
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
ꢀ
ꢀ
ꢀ
0,10 K/W
K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个二极管ꢀ/ꢀperꢀdiode
0,045
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
°C
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
额定电阻值
Ratedꢀresistance
TC = 25°C
R25
∆R/R
P25
ꢀ
-5
ꢀ
5,00
ꢀ
ꢀ
kΩ
R100ꢀꢀ偏差
DeviationꢀofꢀR100
TC = 100°C, R100 = 493 Ω
5
%
耗散功率
Powerꢀdissipation
TC = 25°C
ꢀ
20,0 mW
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
ꢀ
3375
3411
3433
ꢀ
ꢀ
ꢀ
K
K
K
B-值
B-value
ꢀ
B-值
B-value
ꢀ
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
Cu
ꢀ kV
模块基板材料
Materialꢀofꢀmoduleꢀbaseplate
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
ꢀ
Al2O3
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
14,5
13,0
ꢀ
ꢀ
ꢀ mm
ꢀ mm
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
12,5
10,0
相对电痕指数
Comperativeꢀtrackingꢀindex
ꢀ
CTI
> 200
ꢀ
ꢀ
min. typ. max.
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个模块ꢀ/ꢀperꢀmodule
RthCH
LsCE
RCC'+EE'
Tstg
ꢀ
0,009
K/W
nH
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀ/ꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
杂散电感,模块
Strayꢀinductanceꢀmodule
ꢀ
ꢀ
ꢀ
20
ꢀ
ꢀ
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
1,10
mΩ
储存温度
Storageꢀtemperature
ꢀ
-40
3,00
3,0
ꢀ
ꢀ
125 °C
6,00 Nm
6,0 Nm
模块安装的安装扭距
Mountingꢀtorqueꢀforꢀmodulꢀmounting
螺丝ꢀM5ꢀ根据相应的应用手册进行安装
ScrewꢀM5ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
-
-
端子联接扭距
Terminalꢀconnectionꢀtorque
螺丝ꢀM6ꢀ根据相应的应用手册进行安装
ScrewꢀM6ꢀꢀ-ꢀMountingꢀaccordingꢀtoꢀvalidꢀapplicationꢀnote
M
重量
Weight
ꢀ
G
345
ꢀ
g
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
ICꢀ=ꢀfꢀ(VCE
)
)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ150°C
900
900
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
750
600
450
300
150
750
600
450
300
150
0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ1.3ꢀΩ,ꢀRGoffꢀ=ꢀ1.3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV
900
140
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
120
Eoff, Tvj = 150°C
750
600
450
300
150
100
80
60
40
20
0
0
5
6
7
8
9
10
11
12
13
0
150
300
450
IC [A]
600
750
900
VGE [V]
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
ZthJCꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ450ꢀA,ꢀVCEꢀ=ꢀ600ꢀV
220
0,1
Eon, Tvj = 125°C
ZthJC : IGBT
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
200
180
160
140
120
100
80
0,01
60
40
i:
ri[K/W]: 0,00396 0,02178 0,02112 0,01914
τi[s]: 0,01 0,02 0,05 0,1
1
2
3
4
20
0
0,001
0,001
0
2
4
6
8
10
12
14
16
0,01
0,1
t [s]
1
10
RG [Ω]
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
正向偏压特性ꢀ二极管,逆变器ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ1.3ꢀΩ,ꢀTvjꢀ=ꢀ150°C
1000
900
IC, Modul
IC, Chip
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
750
900
800
700
600
500
400
300
200
100
0
600
450
300
150
0
0
200
400
600
800
1000 1200 1400
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V]
VF [V]
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ1.3ꢀΩ,ꢀVCEꢀ=ꢀ600ꢀV
IFꢀ=ꢀ450ꢀA,ꢀVCEꢀ=ꢀ600ꢀV
80
70
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
150
300
450
IF [A]
600
750
900
0
2
4
6
8
10
12
14
16
RG [Ω]
瞬态热阻抗ꢀ二极管,逆变器ꢀ
负温度系数热敏电阻ꢀ温度特性
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
ZthJCꢀ=ꢀfꢀ(t)
Rꢀ=ꢀfꢀ(T)
1
100000
ZthJC : Diode
Rtyp
0,1
10000
1000
100
0,01
i:
1
2
3
4
ri[K/W]: 0,006 0,033 0,032 0,029
τi[s]:
0,01 0,02 0,05 0,1
0,001
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
TC [°C]
100 120 140 160
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
接线图ꢀ/ꢀcircuit_diagram_headline
封装尺寸ꢀ/ꢀpackageꢀoutlines
Infineon
preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FF450R12ME4_B11
初步数据
PreliminaryꢀData
使用条件和条款
ꢀ
使用条件和条款
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preparedꢀby:ꢀMB
approvedꢀby:ꢀMK
dateꢀofꢀpublication:ꢀ2013-11-05
revision:ꢀ2.0
9
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