首页 |元器件品牌

FOA1061A1 [INFINEON]

Support Circuit, 1-Func, Bipolar, PDSO16, PLASTIC, TSSOP-16;
FOA1061A1
型号： FOA1061A1
厂家： Infineon    Infineon
描述：

Support Circuit, 1-Func, Bipolar, PDSO16, PLASTIC, TSSOP-16

ATM 异步传输模式 电信 光电二极管 电信集成电路
文件： 总8页 (文件大小：138K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
FOA1061A1  
FOA1062A1  
622 Mbit/s Transimpedance Amplifier  
Preliminary Data  
Bipolar IC  
Features  
• Data rate up to 622 Mbit/s  
• Input sensitivity –31.0 dBm at BER = 10–9  
• High overload: 2 mApp maximum input current  
• Single supply voltage: + 4.5 V to + 5.5 V  
P-TSSOP-16-1  
• Internal DC-compensation loop increases  
dynamic range  
• No external components needed  
• Internal bias generation for PIN-photodiode  
• Internal low-pass filter to improve power supply rejection  
• Operates with PIN- or APD-photodiode  
• Monitor output for mirrored photodiode current  
Applications  
• Fibre optics data communication systems  
• SONET OC-12, SDH STM-4  
• Pre-amplifier modules  
Type  
Ordering Code  
Q67000-H4129  
Q67000-H4130  
Package  
FOA1061A1  
FOA1062A1  
P-TSSOP-16-1  
bare die  
Semiconductor Group  
1
July 1998  
FOA1061A1  
FOA1062A1  
0.5 k  
Ω
VCC  
GND  
FILTER  
FOA1061A1  
FOA1062A1  
Vref = 4.2 V  
6.0 k  
Ω
60  
60  
Ω
Ω
Q+  
Q-  
-40  
+4.0  
+9.2  
IN  
Vref  
MONITOR  
s
Figure 1 Block diagram.  
Table 1  
Symbol  
VCC  
Pin Description  
Function  
Supply voltage  
IN  
Data input from PIN- or APD-photodiode  
Non-inverting data output  
Q+  
Q–  
Inverting data output  
FILTER  
MONITOR  
GND  
Bias voltage for PIN-diode  
Mirrored photodiode current (connect pin via 0 ... 2 kΩ to VCC)  
Ground  
Semiconductor Group  
2
July 1998  
FOA1061A1  
FOA1062A1  
Electrical Characteristics  
Absolute Maximum Ratings  
Stresses listed below here may cause permanent damage to the device. Exposure to absolute  
maximum rating conditions for extended periods may affect device reliability.  
Ambient temperature Tamb = -40 °C ... +85 °C  
Parameter  
Symbol  
Limit Values  
Unit  
Remarks  
min.  
max.  
6.0  
Supply voltage  
VCC  
Tj  
-0.5  
-40  
-40  
V
Junction temperature  
Storage temperature  
Relative ambient humidity  
ESD voltage  
125  
°C  
°C  
TS  
150  
85/85  
%/°C no condensation  
note 1) and 2)  
VESD  
500  
V
Note: 1) Except IN-pin  
2) HBM according to MIL STD 883D, method 3015.7 and ESD Assn. Standard S5.1-1993.  
Recommended Operating Conditions  
Ambient temperature Tamb = -40 °C ... +85 °C  
Parameter  
Symbol  
Limit Values  
Unit  
Remarks  
min.  
typ.  
+5.0  
622  
45  
max.  
Supply voltage  
VCC  
+4.5  
+5.5  
V
Data transmission rate  
Supply current  
Mbit/s  
mA  
ICC  
ΘJA  
Tj  
Thermal resistance  
Junction temperature  
140  
K/W see note 1)  
°C see note 2)  
-10  
+125  
Note: 1) Junction-to-ambient thermal resistance measurement conditions for packaged device:  
PCB area: 10 cm × 10 cm × 1.5 mm; copper area approx. 60 %; via holes to ground layer  
underneath the device; all pins soldered.  
2) Do not exceed the maximum junction temperature. If used as packaged version, provide  
sufficient PCB heat sink to the device by soldering all pins and sufficient copper area  
underneath the chip (see note 1).  
Semiconductor Group  
3
July 1998  
FOA1061A1  
FOA1062A1  
AC/DC Characteristics  
Conditions: Tamb = +25 °C, VCC = +5.0 V, Cexternal = 0.85 pF  
Parameter  
Symbol  
Limit Values  
Unit  
Remarks  
min.  
typ.  
max.  
54  
Supply current  
IVCC  
45  
mA  
V
Input voltage  
Input current  
VIN  
+1.65  
8
(Note 1)  
IIN  
2000 µApp  
µApp  
Input current before  
clipping  
IIN,CL  
Input resistance  
Input sensitivity  
Optical overload  
RIN  
150  
-31.0  
0
Ω
PIN  
dBm BER < 10 –9 (Note 1)  
dBm BER < 10 –9 (Note 1)  
POVL  
Transimpedance  
RT  
96  
kΩ  
differential  
into 2 × 50 Ω  
Output voltage swing ∆VOUT  
(Q+ - Q–)  
0.6  
0.78  
1.1  
Vpp  
Bandwidth (–3 dB)  
f3db  
450  
MHz  
Output resistance  
Output voltage  
Rout  
48  
60  
72  
Ω
internally connected  
to VCC  
VCMOUT  
tj,P  
VCC - 0.6  
V
(Q+ + Q–)/2  
1.5 µApp < IIN < 160 µApp  
160 µApp < IIN < 1.1 mApp  
Output pattern jitter  
(Note 1)  
15  
45  
ps  
ps  
Powersupplyrejection PSSR  
ratio  
35  
dB f < 10 MHz  
(Note 2)  
Bias resistance  
Bias voltage  
RBIAS  
VBIAS  
400  
500  
+4.2  
65  
600  
Ω
V
Low frequency cutoff f3db, low  
kHz AC-coupled outputs  
(via 22 nF)  
Note: 1) Data rate: 622 Mbit/s; data sequence: PRBS 2 23-1  
2) Generated noise on power supply: sine curve, 100 mVpp (see application note b)  
Semiconductor Group  
4
July 1998  
FOA1061A1  
FOA1062A1  
Package information  
P-TSSOP-16-1  
NC  
VCC  
GND  
GND  
IN  
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
GND  
GND  
Q-  
Q+  
FILTER  
GND  
GND  
NC  
GND  
GND  
MONITOR  
NC: not connected  
Figure 2 Package pinning.  
bare die  
VCC  
GND  
IN  
NC  
GND  
Q-  
GND  
Q+  
FILTER  
GND  
NC  
GND  
NC: not connected  
Figure 3 Pad assignment.  
Semiconductor Group  
5
July 1998  
FOA1061A1  
FOA1062A1  
Eye-diagrams measured at data rates of 622 Mbit/s  
ext. modulator  
EDFA  
Attenuator  
Q+  
Q-  
optical out:  
-2 dBm  
IN  
FOA1062  
(DUT)  
TEK  
CSA803A  
el.*  
α
opt.**  
monitor out: -8 dBm  
* electrical input:  
sampling head  
SD26,  
bandwidth 20 GHz,  
risetime < 17.5 ps  
** optical input:  
O/E-converter head  
SD26,  
bandwidth 20 GHz,  
opt. pulse response  
speed (FWHM) < 28.5 ps  
Bit  
pattern  
generator  
Figure 4 Measurement set-up.  
Figure 5 Eye diagrams at input power -20 dBm (top)  
and -30 dBm (bottom).  
Semiconductor Group  
6
July 1998  
FOA1061A1  
FOA1062A1  
Application notes  
a) General information  
• The output pins Q+ and Q- must be terminated equally to prevent instabilities.  
• It is recommended to minimize stray capacitance when connecting photodiode to  
transimpedance amplifier.  
• To improve power supply rejection ratio (PSRR), VCC should be supplied via resistor  
(4.7 Ω), capacitor (100 nF) to GND, and inductor (BLM11A601, Murata) to VCC-pin.  
• The monitor pin (not used in these application notes) must be left open or connected  
to VCC via resistor of 0 … 2 kΩ.  
b)  
L*  
4.7 Ω  
VCC  
GND  
100 nF  
PIN-  
Diode  
22 nF  
Q+  
FOA1061/2  
Q-  
FILTER  
IN  
Q+  
Q-  
22 nF  
*) BLM11A601, Murata  
Figure 6 Application using PIN-photodiode.  
c)  
L*  
4.7 Ω  
VCC  
GND  
100 nF  
VAPD  
x kΩ  
22 nF  
Q+  
FOA1061/2  
Q-  
FILTER  
IN  
Q+  
Q-  
x nF  
APD-Diode  
22 nF  
*) BLM11A601, Murata  
Figure 7 Application using APD-photodiode.  
Semiconductor Group  
7
July 1998  
FOA1061A1  
FOA1062A1  
c)  
Vcc  
TO-can  
PIN-Diode  
Note:  
OUT-  
OUT  
+
FOA1062  
no external  
components  
needed  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
GND  
Figure 8 Application example of FOA1062 mounted in TO-can.  
Package outline of P-TSSOP-16-1 (Plastic Thin Shrink Small Outline)  
Sorts of Packing  
For more information on package outlines for tubes, trays, etc. see our Data Book “Package  
Information” (Ordering No. B192-H663-7400).  
SMD = Surface Mounted Device  
Dimensions in mm  
Semiconductor Group  
8
July 1998  

相关型号：

FOA1100/2100

 0
ETC

FOA11002A1

 Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications
INFINEON

FOA1121A1

 Support Circuit, 1-Func, Bipolar, PDSO16, PLASTIC, TSSOP-16
INFINEON

FOA1122A1

 Support Circuit, 1-Func, Bipolar, DIE-21
INFINEON

FOA125/225/232

 0
ETC

FOA1251A1

 Support Circuit, 1-Func, Bipolar, PDSO16, PLASTIC, TSSOP-16
INFINEON

FOA1251B1

 Support Circuit, 1-Func, Bipolar, PDSO16, PLASTIC, TSSOP-16
INFINEON

FOA1252A1

 2.5 Gbit/s Transimpedance Amplifier
INFINEON

FOA21002A2

 Semiconductor Solutions for High Speed Communi cation and Fiber Optic Applications
INFINEON

FOA2251A1

 Interface Circuit, BIPolar, PQFP44, PLASTIC, MQFP-44
INFINEON

FOA2322A

 3.2 Gbi t /s Laser Driver IC for Telecom and Datacom Applications
INFINEON

FOA3251

 2.5 Gbit/s Clock and Data Recovery-3R Signal Regeneration
ETC
©2020 ICPDF网 联系我们和版权申明