FP15R12W1T7 [INFINEON]
Solder Pin;
| 型号： | FP15R12W1T7 |
| 厂家： | 
Infineon |
| 描述： | Solder Pin |
| 文件： | 总19页 (文件大小：1022K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FP15R12W1T7
™
EasyPIM module
Preliminary datasheet
EasyPIM module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC
™
™
Features
• Electrical features
- TRENCHSTOPTM IGBT7
- Overload operation up to 175°C
- Low VCEsat
• Mechanical features
- High power density
- Solder contact technology
- 2.5 kV AC 1 min insulation
- Al2O3 substrate with low thermal resistance
- Compact design
Potential applications
• Auxiliary inverters
• Motor drives
• Air conditioning
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
1
2
3
4
5
6
7
8
9
10
11
Datasheet
2
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
2.5
Unit
Isolation test voltage
Internal Isolation
Creepage distance
Creepage distance
Clearance
VISOL
RMS, f = 50 Hz, t = 1 min
kV
basic insulation (class 1, IEC 61140)
Al2O3
11.5
6.3
dCreep terminal to heatsink
mm
mm
mm
mm
dCreep terminal to terminal
dClear terminal to heatsink
dClear terminal to terminal
CTI
10.0
5.0
Clearance
Comparative tracking index
RTI Elec.
> 200
140
RTI
housing
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Stray inductance module
LsCE
30
6
nH
Module lead resistance,
terminals - chip
RAA'+CC' TH=25°C, per switch
mΩ
Module lead resistance,
terminals - chip
RCC'+EE' TH=25°C, per switch
8
mΩ
Storage temperature
Mounting force per clamp
Weight
Tstg
F
-40
20
125
50
°C
N
g
G
24
Note:
The current under continuous operation is limited to 30A rms per connector pin.
2
IGBT, Inverter
Table 3
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
15
Unit
Collector-emitter voltage
VCES
ICDC
Tvj = 25 °C
V
A
Continous DC collector
current
Tvj max = 175 °C
tP = 1 ms
TH = 110 °C
Repetitive peak collector
current
ICRM
VGES
30
20
A
V
Gate-emitter peak voltage
Datasheet
3
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 15 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.60
1.74
1.82
5.80
0.234
0
TBD
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 0.553 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
2.82
0.0099
nF
nF
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
0.003 mA
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 15 A, VCE = 600 V,
VGE = 15 V, RGon = 7.5 Ω
Tvj = 25 °C
0.023
0.025
0.026
0.012
0.015
0.016
0.144
0.190
0.256
0.199
0.301
0.329
0.87
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 15 A, VCE = 600 V,
µs
µs
µs
mJ
mJ
A
VGE = 15 V, RGon = 7.5 Ω
Turn-off delay time
(inductive load)
IC = 15 A, VCE = 600 V,
VGE = 15 V, RGoff = 7.5 Ω
Fall time (inductive load)
IC = 15 A, VCE = 600 V,
VGE = 15 V, RGoff = 7.5 Ω
Turn-on energy loss per
pulse
Eon
Eoff
ISC
IC = 15 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGon = 7.5 Ω, di/dt = 750
A/µs (Tvj = 175 °C)
1.21
1.45
Turn-off energy loss per
pulse
IC = 15 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGoff = 7.5 Ω, dv/dt =
4000 V/µs (Tvj = 175 °C)
0.922
1.44
1.8
SC data
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
48
tP ≤ 7 µs,
Tvj = 175 °C
45
Datasheet
4
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
1.80
Unit
Thermal resistance, junction
to heatsink
RthJH
Tvj op
per IGBT
K/W
°C
Temperature under
switching conditions
-40
175
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
3
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continous DC forward
current
IF
10
20
A
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
VR = 0 V, tP = 10 ms
Tvj = 125 °C
Tvj = 175 °C
27.5
24
A²s
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 10 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
15.5
19.2
22.5
0.82
1.46
2.05
0.31
0.57
0.82
TBD
V
Peak reverse recovery
current
IF = 10 A, VR = 600 V,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
A
Recovered charge
IF = 10 A, VR = 600 V,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
µC
mJ
Reverse recovery energy
Erec
IF = 10 A, VR = 600 V,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Datasheet
5
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2021-03-17
FP15R12W1T7
™
EasyPIM module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Min. Typ. Max.
2.51
Unit
Thermal resistance, junction
to heatsink
RthJH
Tvj op
per diode
K/W
°C
Temperature under
switching conditions
-40
175
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
4
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
VRRM Tvj = 25 °C
Values
Unit
Repetitive peak reverse
voltage
1600
V
Maximum RMS forward
current per chip
IFRMSM TH = 100 °C
IRMSM TH = 100 °C
25
25
A
A
A
Maximum RMS current at
rectifier output
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
300
245
450
300
I2t - value
A²s
Table 8
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
Reverse current
VF
Ir
IF = 10 A
Tvj = 150 °C
0.80
1
V
Tvj = 150 °C, VR = 1600 V
per diode
mA
K/W
Thermal resistance, junction
to heatsink
RthJH
1.54
Temperature under
switching conditions
Tvj, op
-40
150
°C
Datasheet
6
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
5 IGBT, Brake-Chopper
5
IGBT, Brake-Chopper
Table 9
Maximum rated values
Symbol Note or test condition
VCES
ICDC
Parameter
Values
1200
15
Unit
Collector-emitter voltage
Tvj = 25 °C
V
A
Continous DC collector
current
Tvj max = 175 °C
tP = 1 ms
TH = 110 °C
Repetitive peak collector
current
ICRM
VGES
30
20
A
V
Gate-emitter peak voltage
Table 10
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 15 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.60
1.74
1.82
5.80
0.234
0
TBD
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 0.553 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
2.82
0.0099
nF
nF
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
0.003 mA
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 15 A, VCE = 600 V,
VGE = 15 V, RGon = 7.5 Ω
Tvj = 25 °C
0.023
0.025
0.026
0.012
0.015
0.016
0.144
0.190
0.256
0.199
0.301
0.329
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 15 A, VCE = 600 V,
µs
µs
µs
VGE = 15 V, RGon = 7.5 Ω
Turn-off delay time
(inductive load)
IC = 15 A, VCE = 600 V,
VGE = 15 V, RGoff = 7.5 Ω
Fall time (inductive load)
IC = 15 A, VCE = 600 V,
VGE = 15 V, RGoff = 7.5 Ω
Datasheet
7
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
6 Diode, Brake-Chopper
Table 10
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Turn-on energy loss per
pulse
Eon
IC = 15 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGon = 7.5 Ω, di/dt = 750
A/µs (Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.87
1.21
1.45
0.922
1.44
1.8
mJ
Turn-off energy loss per
pulse
Eoff
IC = 15 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGoff = 7.5 Ω, dv/dt =
4000 V/µs (Tvj = 175 °C)
mJ
A
SC data
ISC
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
48
tP ≤ 7 µs,
Tvj = 175 °C
45
Thermal resistance, junction
to heatsink
RthJH
Tvj op
per IGBT
1.80
K/W
°C
Temperature under
switching conditions
-40
175
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
6
Diode, Brake-Chopper
Table 11
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continous DC forward
current
IF
10
20
A
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
VR = 0 V, tP = 10 ms
Tvj = 125 °C
Tvj = 175 °C
27.5
24
A²s
Datasheet
8
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2021-03-17
FP15R12W1T7
™
EasyPIM module
7 NTC-Thermistor
Table 12
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 10 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
15.5
19.2
22.5
0.82
1.46
2.05
0.31
0.57
0.82
2.45
TBD
V
Peak reverse recovery
current
IF = 10 A, VR = 600 V,
-diF/dt = 700 A/µs
(Tvj = 175 °C)
A
Recovered charge
IF = 10 A, VR = 600 V,
-diF/dt = 700 A/µs
(Tvj = 175 °C)
µC
mJ
Reverse recovery energy
Erec
IF = 10 A, VR = 600 V,
-diF/dt = 700 A/µs
(Tvj = 175 °C)
Thermal resistance, junction
to heatsink
RthJH
Tvj op
per diode
K/W
°C
Temperature under
switching conditions
-40
175
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
7
NTC-Thermistor
Table 13
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Rated resistance
Deviation of R100
Power dissipation
B-value
R25
ΔR/R
P25
TNTC = 25 °C
5
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
B-value
K
B-value
K
Note:
Specification according to the valid application note.
Datasheet
9
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE
output characteristic (typical), IGBT, Inverter
IC = f(VCE
)
)
VGE = 15 V
Tvj = 175 °C
30
30
25
20
15
10
5
25
20
15
10
5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
switching losses (typical), IGBT, Inverter
E = f(IC)
)
VCE = 20 V
RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE
=
15 V
30
5.0
27
24
21
18
15
12
9
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
3
0
5
6
7
8
9
10
11
12
13
14
0
5
10
15
20
25
30
Datasheet
10
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
switching times (typical), IGBT, Inverter
E = f(RG)
t = f(IC)
IC = 15 A, VCE = 600 V, VGE
=
15 V
RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE
175 °C
= 15 V, Tvj =
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
0.01
0.001
0.0001
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
switching times (typical), IGBT, Inverter
transient thermal impedance , IGBT, Inverter
t = f(RG)
Zth = f(t)
IC = 15 A, VCE = 600 V, VGE
= 15 V, Tvj = 175 °C
10
10
1
0.1
1
0.01
0.001
0.1
0.001
0
10
20
30
40
50
60
70
80
0.01
0.1
1
10
Datasheet
11
0.10
2021-03-17
FP15R12W1T7
™
EasyPIM module
8 Characteristics diagrams
dv/dt (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 15 A, VCE = 600 V, VGE = 15 V, Tvj = 25 °C
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE
)
RGoff = 7.5 Ω, VGE = 15 V, Tvj = 175 °C
10
9
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
0
200
400
600
800
1000 1200 1400
capacity characteristic (typical), IGBT, Inverter
C = f(VCE
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
)
Tvj = 25 °C, f = 100 kHz, VGE = 0 V
IC = 15 A, Tvj = 25 °C
10
15
10
5
1
0.1
0
-5
0.01
0.001
-10
-15
0.00
0
10 20 30 40 50 60 70 80 90 100
0.05
0.10
0.15
0.20
0.25
Datasheet
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2021-03-17
FP15R12W1T7
™
EasyPIM module
8 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 7.5 Ω, VCE = 600 V
20
18
16
14
12
10
8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10 12 14 16 18 20
switching losses (typical), Diode, Inverter
Erec = f(RG)
transient thermal impedance , Diode, Inverter
Zth = f(t)
VCE = 600 V, IF = 10 A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
1
0.1
0.001
0
10
20
30
40
50
60
70
80
0.01
0.1
1
10
Datasheet
13
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2021-03-17
FP15R12W1T7
™
EasyPIM module
8 Characteristics diagrams
forward characteristic (typical), Diode, Rectifier
transient thermal impedance , Diode, Rectifier
IF = f(VF)
Zth = f(t)
20
18
16
14
12
10
8
10
1
0.1
6
4
2
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.01
0.1
1
10
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE
VGE = 15 V
forward characteristic (typical), Diode, Brake-
Chopper
IF = f(VF)
)
30
20
18
16
14
12
10
8
25
20
15
10
5
6
4
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
14
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2021-03-17
FP15R12W1T7
™
EasyPIM module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
Datasheet
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2021-03-17
FP15R12W1T7
™
EasyPIM module
9 Circuit diagram
9
Circuit diagram
J
Figure 2
Datasheet
16
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2021-03-17
FP15R12W1T7
™
EasyPIM module
10 Package outlines
10
Package outlines
Infineon
Figure 3
Datasheet
17
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2021-03-17
FP15R12W1T7
™
EasyPIM module
11 Module label code
11
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 4
Datasheet
18
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2021-03-17
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-03-17
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2021 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
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aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
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Document reference
IFX-
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
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information given in this document with respect to such
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