FP50R12KS4CBOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-35;
FP50R12KS4CBOSA1
型号: FP50R12KS4CBOSA1
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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文件: 总12页 (文件大小:172K)
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FP50R12KS4CV2

IGBT Module

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183 ETC

FP50R12KT3

IGBT-modules

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674 EUPEC

FP50R12KT4

EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode

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379 INFINEON

FP50R12KT4_B11

EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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116 INFINEON

FP50R12KT4BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP50R12KT4G

EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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331 INFINEON

FP50R12KT4G_B15

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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11 INFINEON

FP50R12KT4GB15BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R12KT4GBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35

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1 INFINEON

FP50R12KT4P

Insulated Gate Bipolar Transistor

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7 INFINEON

FP50S

2,500 V - 10,000 V Rectifier Stacks 2.2 A Forward Current 3000 ns Recovery Time

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127 VMI

FP50S_13

High Voltage Rectifier Stacks 2.2A • 3000ns • Axial Leaded

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1 VMI

FP50UF

High Voltage Rectifier Stacks 2.2A • 70ns • Axial Leaded

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0 VMI

FP-510

Wideband RF/Pulse Transformer 1-1000 MHz

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18 SIRENZA

FP5101

1 Channel Synchronous PWM Controller

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23 ETC