FP75R12N2T7 [INFINEON]
EconoPIM™ 2 1200 V、75 A三相PIM IGBT模块,采用TRENCHSTOP™ IGBT7、发射极控制7二极管和NTC。集成整流器和制动斩波器的PIM(功率集成模块)可节省系统成本。也可采用压接工艺。;型号: | FP75R12N2T7 |
厂家: | Infineon |
描述: | EconoPIM™ 2 1200 V、75 A三相PIM IGBT模块,采用TRENCHSTOP™ IGBT7、发射极控制7二极管和NTC。集成整流器和制动斩波器的PIM(功率集成模块)可节省系统成本。也可采用压接工艺。 斩波器 双极性晶体管 二极管 |
文件: | 总21页 (文件大小:646K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FP75R12N2T7
™
EconoPIM 2 module
Preliminary datasheet
EconoPIM 2 module with TRENCHSTOP IGBT7 and Emitter Controlled 7 diode and NTC
™
™
Features
• Electrical features
- VCES = 1200 V
- IC nom = 75 A / ICRM = 150 A
- TRENCHSTOPTM IGBT7
- Low VCEsat
- Overload operation up to 175°C
• Mechanical features
- High power and thermal cycling capability
- Integrated NTC temperature sensor
- Copper base plate
- Al2O3 substrate with low thermal resistance
- Solder contact technology
Potential applications
• Auxiliary inverters
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
-
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.21
2021-06-23
FP75R12N2T7
™
EconoPIM 2 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
1
2
3
4
5
6
7
8
9
10
11
Datasheet
2
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FP75R12N2T7
™
EconoPIM 2 module
1 Package
1
Package
Table 1
Insulation coordination
Symbol Note or test condition
Parameter
Values
2.5
Unit
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
kV
Material of module
baseplate
Cu
Internal Isolation
Creepage distance
Clearance
basic insulation (class 1, IEC 61140)
Al2O3
10.0
7.5
dCreep terminal to heatsink
mm
mm
dClear terminal to heatsink
Comparative tracking index
RTI Elec.
CTI
> 200
140
RTI
housing
°C
Table 2
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Stray inductance module
LsCE
35
nH
Module lead resistance,
terminals - chip
RAA'+CC' TC=25°C, per switch
RCC'+EE' TC=25°C, per switch
Tstg
5.6
mΩ
Module lead resistance,
terminals - chip
5.3
mΩ
Storage temperature
-40
3
125
6
°C
Mounting torque for modul
mounting
M
- Mounting according to M5, Screw
valid application note
Nm
Weight
G
180
g
2
IGBT, Inverter
Table 3
Maximum rated values
Symbol Note or test condition
VCES
ICDC
Parameter
Values
1200
75
Unit
Collector-emitter voltage
Tvj = 25 °C
TC = 100 °C
V
A
Continous DC collector
current
Tvj max = 175 °C
tP = 1 ms
Repetitive peak collector
current
ICRM
VGES
150
20
A
V
Gate-emitter peak voltage
Datasheet
3
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2021-06-23
FP75R12N2T7
™
EconoPIM 2 module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 75 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.55
1.69
1.77
5.80
1.25
2
TBD
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 1.28 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
15.1
0.053
nF
nF
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
0.014 mA
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 75 A, VCE = 600 V,
VGE = 15 V, RGon = 5.6 Ω
Tvj = 25 °C
0.146
0.162
0.169
0.053
0.057
0.060
0.320
0.390
0.440
0.110
0.200
0.270
8.05
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
tdoff
tf
IC = 75 A, VCE = 600 V,
µs
µs
µs
mJ
mJ
A
VGE = 15 V, RGon = 5.6 Ω
Turn-off delay time
(inductive load)
IC = 75 A, VCE = 600 V,
VGE = 15 V, RGoff = 5.6 Ω
Fall time (inductive load)
IC = 75 A, VCE = 600 V,
VGE = 15 V, RGoff = 5.6 Ω
Turn-on energy loss per
pulse
Eon
Eoff
ISC
IC = 75 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGon = 5.6 Ω, di/dt =
1050 A/µs (Tvj = 175 °C)
10.6
12.3
Turn-off energy loss per
pulse
IC = 75 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGoff = 5.6 Ω, dv/dt =
3150 V/µs (Tvj = 175 °C)
4.95
7.76
9.51
SC data
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
260
tP ≤ 7 µs,
Tvj = 175 °C
250
Datasheet
4
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FP75R12N2T7
™
EconoPIM 2 module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per IGBT
0.475 K/W
Thermal resistance, case to
heatsink
per IGBT, λgrease= 1 W/(m*K)
0.141
K/W
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to
AN2018-14.
3
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continous DC forward
current
IF
75
A
A
Repetitive peak forward
current
I2t - value
IFRM
I2t
tP = 1 ms
150
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 175 °C
1150
740
A²s
Table 6
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 75 A, VGE = 0 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.72
1.59
1.52
38
TBD
V
Peak reverse recovery
current
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
A
51
59
Recovered charge
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
5.43
10.4
14.1
µC
Datasheet
5
0.21
2021-06-23
FP75R12N2T7
™
EconoPIM 2 module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Reverse recovery energy
Erec
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.79
3.5
mJ
4.83
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per diode
0.708 K/W
K/W
Thermal resistance, case to
heatsink
per diode, λgrease= 1 W/(m*K)
0.153
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to
AN2018-14.
4
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 150 °C
1600
V
Maximum RMS forward
current per chip
IFRMSM TC = 95 °C
IRMSM TC = 95 °C
75
A
A
A
Maximum RMS current at
rectifier output
100
Surge forward current
IFSM
I2t
tP = 10 ms
tP = 10 ms
Tvj = 25 °C
Tvj = 150 °C
Tvj = 25 °C
Tvj = 150 °C
745
515
I2t - value
2780
1330
A²s
Table 8
Characteristic values
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Forward voltage
Reverse current
VF
Ir
Tvj = 150 °C, IF = 75 A
Tvj = 150 °C, VR = 1600 V
per diode
1.06
1
V
mA
Thermal resistance, junction
to case
RthJC
0.697 K/W
Thermal resistance, case to
heatsink
RthCH
per diode, λPaste= 1 W /(m*K) / λgrease= 1
W/(m*K)
0.153
K/W
Datasheet
6
0.21
2021-06-23
FP75R12N2T7
™
EconoPIM 2 module
5 IGBT, Brake-Chopper
Table 8
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Temperature under
switching conditions
Tvj, op
-40
150
°C
5
IGBT, Brake-Chopper
Table 9
Maximum rated values
Parameter
Symbol Note or test condition
Values
1200
50
Unit
Collector-emitter voltage
VCES
Tvj = 25 °C
TC = 115 °C
V
A
Continous DC collector
current
ICDC
ICRM
VGES
Tvj max = 175 °C
tP = 1 ms
Repetitive peak collector
current
100
20
A
V
Gate-emitter peak voltage
Table 10
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Collector-emitter saturation
voltage
VCE sat IC = 50 A, VGE = 15 V
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.50
1.64
1.72
5.80
0.92
0
TBD
V
Gate threshold voltage
Gate charge
VGEth
QG
IC = 1.28 mA, VCE = VGE, Tvj = 25 °C
5.15
6.45
V
VGE = 15 V, VCE = 600 V
Tvj = 25 °C
µC
Ω
Internal gate resistor
Input capacitance
RGint
Cies
Cres
ICES
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
11.1
0.039
nF
nF
Reverse transfer capacitance
Collector-emitter cut-off
current
VCE = 1200 V, VGE = 0 V
Tvj = 25 °C
0.007 mA
Gate-emitter leakage current
IGES
tdon
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
100
nA
µs
Turn-on delay time
(inductive load)
IC = 50 A, VCE = 600 V,
VGE = 15 V, RGon = 7.5 Ω
Tvj = 25 °C
0.059
0.061
0.062
0.035
0.039
0.041
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Rise time (inductive load)
tr
IC = 50 A, VCE = 600 V,
µs
VGE = 15 V, RGon = 7.5 Ω
Datasheet
7
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FP75R12N2T7
™
EconoPIM 2 module
6 Diode, Brake-Chopper
Table 10
Characteristic values (continued)
Symbol Note or test condition
Parameter
Values
Unit
Min. Typ. Max.
Turn-off delay time
tdoff
IC = 50 A, VCE = 600 V,
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
0.290
0.380
0.420
0.110
0.200
0.270
3.37
µs
(inductive load)
VGE = 15 V, RGoff = 7.5 Ω
Fall time (inductive load)
tf
IC = 50 A, VCE = 600 V,
VGE = 15 V, RGoff = 7.5 Ω
µs
mJ
mJ
A
Turn-on energy loss per
pulse
Eon
Eoff
ISC
IC = 50 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGon = 7.5 Ω, di/dt =
1145 A/µs (Tvj = 175 °C)
4.26
4.66
Turn-off energy loss per
pulse
IC = 50 A, VCE = 600 V,
Lσ = 35 nH, VGE = 15 V,
RGoff = 7.5 Ω, dv/dt =
2940 V/µs (Tvj = 175 °C)
3.33
5.32
6.58
SC data
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
190
tP ≤ 7 µs,
Tvj = 175 °C
180
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per IGBT
0.580 K/W
K/W
Thermal resistance, case to
heatsink
per IGBT, λgrease= 1 W/(m*K)
0.147
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to
AN2018-14.
6
Diode, Brake-Chopper
Table 11
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1200
V
Continous DC forward
current
IF
25
50
A
A
Repetitive peak forward
current
IFRM
tP = 1 ms
Datasheet
8
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FP75R12N2T7
™
EconoPIM 2 module
7 NTC-Thermistor
Table 11
Maximum rated values (continued)
Symbol Note or test condition
Parameter
Values
125
Unit
I2t - value
I2t
tP = 10 ms, VR = 0 V
Tvj = 150 °C
Tvj = 175 °C
A²s
95
Table 12
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Forward voltage
VF
IRM
Qr
IF = 25 A
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
1.83
1.70
1.63
19.2
19.3
19.4
1.59
1.63
1.64
0.64
0.66
0.67
TBD
V
Peak reverse recovery
current
VR = 600 V, IF = 25 A,
VGE = -15 V, -diF/dt = 375
A/µs (Tvj = 175 °C)
A
Recovered charge
VR = 600 V, IF = 25 A,
VGE = -15 V, -diF/dt = 375
A/µs (Tvj = 175 °C)
µC
mJ
Reverse recovery energy
Erec
VR = 600 V, IF = 25 A,
VGE = -15 V, -diF/dt = 375
A/µs (Tvj = 175 °C)
Thermal resistance, junction
to case
RthJC
RthCH
Tvj op
per diode
1.43 K/W
K/W
Thermal resistance, case to
heatsink
per diode, λgrease= 1 W/(m*K)
0.182
Temperature under
switching conditions
-40
175
°C
Note:
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to
AN2018-14.
7
NTC-Thermistor
Table 13
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
Rated resistance
Deviation of R100
Power dissipation
R25
ΔR/R
P25
TNTC = 25 °C
5
kΩ
%
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
-5
5
20
mW
Datasheet
9
0.21
2021-06-23
FP75R12N2T7
™
EconoPIM 2 module
7 NTC-Thermistor
Table 13
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Unit
Min. Typ. Max.
B-value
B-value
B-value
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3375
3411
3433
K
K
K
Note:
Specification according to the valid application note.
Datasheet
10
0.21
2021-06-23
FP75R12N2T7
™
EconoPIM 2 module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE
output characteristic (typical), IGBT, Inverter
IC = f(VCE
)
)
VGE = 15 V
Tvj = 175 °C
150
150
125
100
75
50
25
0
125
100
75
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE
switching losses (typical), IGBT, Inverter
E = f(IC)
)
VCE = 20 V
RGoff = 5.6 Ω, RGon = 5.6 Ω, VCE = 600 V, VGE = 15 V
150
50
45
40
35
30
25
20
15
10
5
125
100
75
50
25
0
0
5
6
7
8
9
10
11
12
13
0
15 30 45 60 75 90 105 120 135 150
Datasheet
11
0.21
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FP75R12N2T7
™
EconoPIM 2 module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
switching times (typical), IGBT, Inverter
E = f(RG)
t = f(IC)
IC = 75 A, VCE = 600 V, VGE
=
15 V
RGoff = 5.6 Ω, RGon = 5.6 Ω, VCE = 600 V, VGE
175 °C
= 15 V, Tvj =
60
55
50
45
40
35
30
25
20
15
10
5
10
1
0.1
0.01
0
0
5
10 15 20 25 30 35 40 45 50 55 60
0
15 30 45 60 75 90 105 120 135 150
switching times (typical), IGBT, Inverter
transient thermal impedance , IGBT, Inverter
t = f(RG)
Zth = f(t)
IC = 75 A, VCE = 600 V, VGE
= 15 V, Tvj = 175 °C
10
1
1
0.1
0.1
0.01
0.01
0
5
10 15 20 25 30 35 40 45 50 55 60
0.001
0.01
0.1
1
10
Datasheet
12
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FP75R12N2T7
™
EconoPIM 2 module
8 Characteristics diagrams
reverse bias safe operating area (RBSOA), IGBT,
Inverter
dv/dt (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 75 A, VCE = 600 V, VGE = 15 V, Tvj = 25 °C
IC = f(VCE
)
RGoff = 5.6 Ω, VGE = 15 V, Tvj = 175 °C
200
6
5
4
3
2
1
0
175
150
125
100
75
50
25
0
0
200
400
600
800 1000 1200 1400
0
5
10 15 20 25 30 35 40 45 50 55 60
capacity characteristic (typical), IGBT, Inverter
C = f(VCE
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
IC = 75 A, Tvj = 25 °C
100
15
10
5
10
1
0
-5
0.1
0.01
-10
-15
0
10 20 30 40 50 60 70 80 90 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Datasheet
13
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FP75R12N2T7
™
EconoPIM 2 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 5.6 Ω, VCE = 600 V
150
125
100
75
6
5
4
3
2
1
0
50
25
0
0.0
0.5
1.0
1.5
2.0
2.5
0
15 30 45 60 75 90 105 120 135 150
switching losses (typical), Diode, Inverter
Erec = f(RG)
transient thermal impedance , Diode, Inverter
Zth = f(t)
VCE = 600 V, IF = 75 A
6
5
4
3
2
1
0
1
0.1
0.01
0
5
10 15 20 25 30 35 40 45 50 55 60
0.001
0.01
0.1
1
10
Datasheet
14
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FP75R12N2T7
™
EconoPIM 2 module
8 Characteristics diagrams
Forward characteristic (typical), Diode, Rectifier
Transient thermal impedance, Diode, Rectifier
IF = f(VF)
Zth = f(t)
150
135
120
105
90
1
75
0.1
60
45
30
15
0
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001
0.01
0.1
1
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE
VGE = 15 V
forward characteristic (typical), Diode, Brake-
Chopper
IF = f(VF)
)
100
50
90
80
70
60
50
40
30
20
10
0
45
40
35
30
25
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
Datasheet
15
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FP75R12N2T7
™
EconoPIM 2 module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC
)
100000
10000
1000
100
10
0
25
50
75
100
125
150
175
Datasheet
16
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FP75R12N2T7
™
EconoPIM 2 module
9 Circuit diagram
9
Circuit diagram
J
Figure 2
Datasheet
17
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FP75R12N2T7
™
EconoPIM 2 module
10 Package outlines
10
Package outlines
Infineon
Figure 3
Datasheet
18
0.21
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FP75R12N2T7
™
EconoPIM 2 module
11 Module label code
11
Module label code
Module label code
Code format
Encoding
Data Matrix
ASCII text
Barcode Code128
Code Set A
23 digits
Symbol size
Standard
16x16
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Digit
1 – 5
6 - 11
12 - 19
20 – 21
22 – 23
Example
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 4
Datasheet
19
0.21
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FP75R12N2T7
™
EconoPIM 2 module
Revision history
Revision history
Document revision
Date of release Description of changes
V1.0
0.20
0.21
2021-06-23
2021-06-23
2021-06-23
Preliminary datasheet
Datasheet
20
0.21
2021-06-23
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-06-23
Published by
Infineon Technologies AG
81726 Munich, Germany
IMPORTANT NOTICE
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
©
2021 Infineon Technologies AG
All Rights Reserved.
Except as otherwise explicitly approved by Infineon
Technologies in
a written document signed by
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aspect of this document?
Email: erratum@infineon.com
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
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be expected to result in personal injury.
Document reference
IFX-AAY056-003
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
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application.
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