FS03MR12A6MA1B [INFINEON]

PinFin Base Plate;
FS03MR12A6MA1B
型号: FS03MR12A6MA1B
厂家: Infineon    Infineon
描述:

PinFin Base Plate

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中文:  中文翻译
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FS03MR12A6MA1B  
HybridPACK Drive module  
HybridPACK Drive module with CoolSiC Automotive MOSFET  
Features  
• Electrical features  
- VDSS = 1200 V  
- ID nom = 400 A  
- New semiconductor material - Silicon Carbide  
- Low RDSon  
- Low Switching Losses  
- Low Qg and Crss  
- Low Inductive Design <10nH  
- Tvj op = 150 °C  
• Mechanical features  
- 4.2 kV DC 1 sec Insulation  
- High Creepage and Clearance Distances  
- Compact design  
- High Power Density  
- Direct Cooled PinFin Base Plate  
- High Performance Si3N4 Ceramic  
- Guiding elements for PCB and cooler assembly  
- Integrated NTC temperature sensor  
- PressFIT Contact Technology  
- RoHS compliant  
- UL 94 V0 module frame  
Potential applications  
• Automotive Applications  
• Hybrid Electrical Vehicles (H)EV  
• Motor Drives  
• Commercial Agriculture Vehicles  
Description  
T
T
T
Type  
Package  
Marking  
FS03MR12A6MA1B  
HybridPACK Drive Module  
SP001720764  
Datasheet  
www.infineon.com  
Please read the Important Notice and Warnings at the end of this document  
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
Table of contents  
Table of contents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7  
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15  
1
2
3
4
5
6
7
8
Datasheet  
2
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
1 Package  
1
Package  
Table 1  
Insulation coordination  
Symbol Note or test condition  
Parameter  
Values  
4.2  
Unit  
Isolation test voltage  
VISOL  
RMS, f = 0 Hz, t = 1 sec  
kV  
Material of module  
baseplate  
Ni+Cu1)  
Internal isolation  
Creepage distance  
Creepage distance  
Clearance  
basic insulation (class 1, IEC 61140)  
Si3N4  
9.0  
dCreep terminal to heatsink  
mm  
mm  
mm  
mm  
dCreep terminal to terminal  
dClear terminal to heatsink  
dClear terminal to terminal  
CTI  
9.0  
4.5  
Clearance  
4.5  
Comparative tracking index  
1) Ni plated Cu baseplate  
> 200  
Table 2  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Min. Typ. Max.  
641)  
Unit  
Pressure drop in cooling  
circuit  
Δp  
ΔV/Δt = 10 dm³/min, 50% water/50%  
ethylenglycol, TF = 60 °C  
mbar  
bar  
Maximum pressure in  
cooling circuit  
p
Tbaseplate < 40°C (relative pressure)  
Tbaseplate > 40°C (relative pressure)  
2.5  
2.0  
8.5  
Stray inductance module  
LsCE  
nH  
Module lead resistance,  
terminals - chip  
RCC'+EE' TF = 25°C, per switch  
0.75  
mΩ  
Storage temperature  
Tstg  
-40  
1.8  
125  
2.2  
°C  
Mounting torque for modul  
mounting  
M
Screw M4 baseplate to heatsink  
2.0  
Nm  
Weight  
G
720  
g
1) Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY.  
2
MOSFET  
Table 3  
Maximum rated values  
Symbol Note or test condition  
Parameter  
Values  
1200  
Unit  
Drain-source voltage  
DC drain current  
VDSS  
Tvj = 25 °C  
V
A
A
V
ID nom VGS = 15 V, TF = 60 °C  
Tvjmax = 175 °C  
400  
Pulsed drain current  
Gate-source voltage  
ID pulse verified by design, tp limited by Tvjmax  
800  
VGSS  
-10/+20  
Datasheet  
3
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
2 MOSFET  
Table 4  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Drain-source on resistance  
Gate threshold voltage  
RDS(on) ID = 400 A, VGS = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
2.75  
4.00  
4.55  
4.40  
3.70 mΩ  
VGS(th) ID = 240 mA, VGS = VDS  
,
3.25  
5.55  
V
(tested afte 1 ms pulse  
at VGS= +20 V)  
Total gate charge  
Internal gate resistor  
Input capacitance  
QG  
RGint  
Ciss  
VDS = 600 V, VGS = -5/+15 V  
1.32  
0.23  
42.6  
µC  
Tvj = 25 °C  
Tvj = 25 °C  
f = 1 MHz, VDS = 600 V,  
VGS = 0 V  
nF  
Output capacitance  
Coss  
Crss  
f = 1 MHz, VDS = 600 V,  
VGS = 0 V  
Tvj = 25 °C  
Tvj = 25 °C  
Tvj = 25 °C  
1.86  
0.17  
438  
nF  
nF  
µJ  
Reverse transfer capacitance  
COSS stored energy  
f = 1 MHz, VDS = 600 V,  
VGS = 0 V  
EOSS  
VDS = 600 V,  
VGS = -5/+15 V  
Drain-source leakage current  
Gate-source leakage current  
IDSX  
IGSS  
td on  
VGS = -5 V, VDSS = 1200 V Tvj = 25 °C  
VGS = 20 V, VDS = 0 V Tvj = 25 °C  
100  
400  
µA  
nA  
ns  
Turn-on delay time,  
inductive load  
ID = 400 A, RGon = 5.1 Ω, Tvj = 25 °C  
77  
62  
VGS = -5/+15 V,  
Tvj = 125 °C  
VDS = 600 V  
Tvj = 150 °C  
59  
Rise time (inductive load)  
tr  
td off  
tf  
ID = 400 A, RGon = 5.1 Ω, Tvj = 25 °C  
79  
ns  
ns  
VGS = -5/+15 V,  
Tvj = 125 °C  
VDS = 600 V  
70  
Tvj = 150 °C  
69  
Tuen-off delay time,  
inductive load  
ID = 400 A, RGoff = 5.1 Ω, Tvj = 25 °C  
263  
287  
294  
64  
VGS = -5/+15 V,  
Tvj = 125 °C  
VDS = 600 V  
Tvj = 150 °C  
Fall time (inductive load)  
ID = 400 A, RGoff = 5.1 Ω, Tvj = 25 °C  
ns  
VGS = -5/+15 V,  
Tvj = 125 °C  
VDS = 600 V  
64  
Tvj = 150 °C  
65  
Turn-on energy loss per  
pulse  
Eon  
ID = 400 A, RGon = 5.1 Ω, Tvj = 25 °C,  
19.48  
mJ  
VGS = -5/+15 V,  
di/dt = 4 kA/µs  
VDS = 600 V, Lσ = 20 nH  
Tvj = 125 °C,  
19.85  
20.16  
di/dt = 4.6 kA/µs  
Tvj = 150 °C,  
di/dt = 4.6 kA/µs  
Datasheet  
4
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
3 Body diode  
Table 4  
Characteristic values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Min. Typ. Max.  
17.61  
Unit  
Tuen-off energy loss per  
Eoff  
ID = 400 A, RGoff = 5.1 Ω, Tvj = 25 °C,  
mJ  
pulse  
VGS = -5/+15 V,  
du/dt = 7.3 kV/µs  
VDS = 600 V, Lσ = 20 nH  
Tvj = 125 °C,  
17.95  
18.21  
5300  
4800  
du/dt = 7.2 kV/µs  
Tvj = 150 °C,  
du/dt = 7.1 kV/µs  
Short circuit data  
ISC  
VGS = -5/+15 V,  
VDD = 800 V,  
tSC = 3 µs,  
Tvj = 25 °C  
A
VDSmax = VDSS-LsDS*di/dt,  
RG = 5.1 Ω  
tSC = 3 µs,  
Tvj = 150 °C  
Thermal resistance, junction  
to cooling fluid  
RthJF  
Tvj op  
per MOSFET, V/∆t = 10.0 dm³/min; fluid =  
50% water/50% ethylenglycol, TF = 60 °C  
0.1 0.1081 K/W  
)
Temperature under  
switching conditions  
-40  
150  
°C  
1) EoL criteria see AQG324, verified by characterization with 4.5 sigma. Cooler design and flow direction according  
to application note AN-HPDPERF-ASSEMBLY  
3
Body diode  
Table 5  
Maximum rated values  
Symbol Note or test condition  
ISD Tvjmax = 175 °C, VGS = -5 V TF = 60 °C  
Parameter  
Values  
Unit  
DC body diode forward  
current  
210  
A
Pulsed body diode current  
ISD pulse verified by design, tp limited by Tvjmax  
800  
A
Table 6  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Forward voltage  
VDSR  
ISD = 400 A, VGS = -5 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
4.42  
4.22  
4.16  
165  
287  
309  
6.15  
V
Peak reverse recovery  
current  
Irrm  
ISD = 400 A, Vr = 600 V,  
VGS = -5 V  
A
Datasheet  
5
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
4 NTC-Thermistor  
Table 6  
Characteristic values (continued)  
Symbol Note or test condition  
Parameter  
Values  
Unit  
Min. Typ. Max.  
Recovered charge  
Qrr  
ISD = 400 A, Vr = 600 V,  
VGS = -5 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
11.20  
18.10  
19.30  
1.4  
µC  
Reverse recovery energy  
Erec  
ISD = 400 A, Vr = 600 V,  
VGS = -5 V  
Tvj = 25 °C,  
-di/dt = 5.9 kA/µs  
mJ  
Tvj = 125 °C,  
4.1  
4.7  
-di/dt = 6.9 kA/µs  
Tvj = 150 °C,  
-di/dt = 6.9 kA/µs  
4
NTC-Thermistor  
Table 7  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Min. Typ. Max.  
Rated resistance  
Deviation of R100  
Power dissipation  
B-value  
R25  
ΔR/R  
P25  
TNTC = 25 °C  
5
kΩ  
%
TNTC = 25 °C, R100 = 493 Ω  
TNTC = 25 °C  
-5  
5
20  
mW  
K
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]  
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]  
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]  
3375  
3411  
3433  
B-value  
K
B-value  
K
Datasheet  
6
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
5 Characteristics diagrams  
5
Characteristics diagrams  
pressure drop in cooling circuit,  
Δp = f(ΔV/Δt)  
TF = 60 °C, fluid = 50% water/50% ethylenglycol  
output characteristic (typical), MOSFET  
ID = f(VDS  
VGS = 15 V  
)
120  
100  
80  
60  
40  
20  
0
800  
600  
400  
200  
0
-200  
-400  
-600  
-800  
-4.0 -3.0 -2.0 -1.0 0.0  
1.0  
2.0  
3.0  
4.0  
4
5
6
7
8
9
10 11 12 13 14  
output characteristic (typical), MOSFET  
ID = f(VDS  
transfer characteristic (typical), MOSFET  
ID = f(VGS  
)
)
Tvj = 25 °C  
VDS = 20 V  
800  
800  
600  
400  
200  
0
600  
400  
200  
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
2
4
6
8
10  
12  
Datasheet  
7
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
5 Characteristics diagrams  
Drain source on-resistance (typical), MOSFET  
RDS(on) = f(Tvj)  
drain source on-resistance (typical), MOSFET  
RDS(on) = f(ID)  
ID = 400 A, VGS = 15 V  
VGS = 15 V  
5
4
3
2
1
0
6
5
4
3
2
1
0
25  
50  
75  
100  
125  
150  
0
100 200 300 400 500 600 700 800  
capacity characteristic (typical), MOSFET  
C = f(VDS  
switching losses (typical), MOSFET  
E = f(RG)  
)
f = 1 MHz, VGS = 0.0 V, Tvj = 25 °C  
ID = 400 A, VDS = 600 V, VGS = -5.0/15.0 V  
120  
100  
80  
60  
40  
20  
0
100  
10  
1
0.1  
0
100  
200  
300  
400  
500  
600  
5
10  
15  
20  
25  
30  
Datasheet  
8
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
5 Characteristics diagrams  
switching losses (typical), MOSFET  
E = f(ID)  
thermal impedance , MOSFET  
RthJF = f(dv/dt)  
VDS = 600 V, RGoff = 5.1 Ω, RGon = 5.1 Ω, VGS = -5.0/15.0 V  
fluid = 50% water/50% ethylenglycol , TF = 60 °C  
50  
40  
30  
20  
10  
0
0.120  
0.114  
0.108  
0.102  
0.096  
0.090  
0
200  
400  
600  
800  
4
6
8
10  
12  
14  
transient thermal impedance , MOSFET  
Zth = f(t)  
forward characteristic body diode (typical), MOSFET  
ISD = f(VSD  
)
ΔV/Δt = 10 dm³/min, fluid = 50% water/50%  
ethylenglycol , TF = 60 °C  
Tvj = 25 °C  
1
800  
700  
600  
500  
400  
300  
200  
100  
0
0.1  
0.01  
0.001  
0
1
2
3
4
5
6
0.001  
0.01  
0.1  
1
10  
Datasheet  
9
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
5 Characteristics diagrams  
Switching losses body diode (typical), MOSFET  
Switching losses body diode (typical), MOSFET  
Erec = f(RG)  
Erec = f(ISD  
)
Vr = 600 V, RGon = 5.1 Ω, VGS = -5.0/15.0 V  
Vr = 600 V, ISD = 400 A, VGS = -5.0/15.0 V  
10  
10  
8
6
4
2
0
8
6
4
2
0
0
200  
400  
600  
800  
5
10  
15  
20  
25  
30  
Reverse bias safe operating area (RBSOA), MOSFET  
ID = f(VDS  
temperature characteristic (typical), NTC-Thermistor  
R = f(TNTC  
)
)
RGoff = 5.1 Ω, VGS = +15V/-5 V, Tvj = 150 °C  
1000  
100000  
10000  
1000  
800  
600  
400  
200  
0
100  
0
200  
400  
600  
800 1000 1200 1400  
0
20  
40  
60  
80 100 120 140 160  
Datasheet  
10  
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
6 Circuit diagram  
6
Circuit diagram  
P1  
P2  
P3  
D1.2  
D1.1  
D3.2  
D5.2  
D5.1  
T1  
D3.1  
T
T
T
T2  
T3  
G1  
S1  
G3  
S3  
G5  
S5  
U
V
W
D2  
D4  
D6  
T4  
T5  
G2  
G4  
G6  
S2.1  
S2.2  
S4.1  
S4.2  
S6.1  
S6.2  
T6  
N1  
N2  
N3  
Figure 2  
Datasheet  
11  
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
7 Package outlines  
7
Package outlines  
Ø5,3±0,15{  
B
n0,6 FG  
A
j
n1,2 DE  
F
6x(N1-N3;P1-P3)  
G
6x  
n5,5±0,1  
6x  
14±0,2 6x  
D
6x  
22,25±0,4  
16,25  
9,75±0,4  
1±0,15  
16±0,2  
n0,5 DE  
A
j
n1,6 BC  
Y
B
N2  
P2  
P1  
N1  
N3  
P3  
8x  
5±0,4  
0
X
0
0
G4  
G6  
G2  
D4  
D6  
15,5±0,5  
D2  
D3.2 S4.2  
D5.2 S6.2  
D1.2 S2.2  
S4.1  
S6.1  
S2.1  
4±0,3  
T1  
T2  
T3  
T4  
T5  
T6  
6,35±0,5  
A
G1 S1  
G3  
G5 S5  
D5.1  
S3  
66,5±0,5  
D1.1  
D3.1  
82  
87±0,4  
90,75±0,4  
98,25  
82  
C
V
U
W
C
1±0,15  
E
3x  
104,25±0,4  
3x  
n5,5±0,1  
3x  
14±0,2  
H
n0,6 H I  
A
j
n1,2 DE  
3x(U;V;W)  
I
B
S
D2  
D3  
D4  
X-Y ( 1 : 1 )  
8x  
L
8x  
Y
N2  
P2  
N3  
N1  
P1  
P3  
n0,8 LM  
n1,6 B C  
D1  
9,3±0,2  
A
j
0
8
A
M
c 0,3 CZ  
X
G2  
G4  
G6  
D2  
D4  
D6  
6x common  
zones  
D1-D2  
18,85  
origin axis generated by  
D1.2,S2.2,G2,S2.1,D2,D3.2,S4.2,  
G4,S4.1,D4,D5.2,S6.2,G6,S6.1,D6  
D1.2 S2.2  
D3.2 S4.2  
D5.2 S6.2  
S2.1 Z  
S4.1  
S6.1  
dimensioned for  
EJOT Delta PT  
WN5451 30 x 10  
J
K
D2-D3  
D3-D4  
D8-D7  
D7-D6  
D6-D5  
R
51,85  
59,35  
67,15  
69,85  
74,1  
82  
T1  
T3  
T4  
T5  
T6  
T
T2  
G1 S1  
G3S3  
D3.1  
G5 S5  
D5.1  
D1.1  
3,94±0,5  
C
U
V
W
D8  
refers  
D7  
D6  
D5  
to local CZ  
Areas R,S or T  
(19,75)  
Z ( 1,5 : 1 )  
Drawing: D00112361 Rev07  
general  
edges  
surface  
**  
**  
tolerances  
KJ  
BC  
A
j
1. DIN  
DIN EN ISO  
1302  
G2  
S2.1  
DIN ISO 13715  
16742-TG4  
2. DIN ISO  
2768-mK  
30x  
D1.2  
S2.2  
** Pin positions  
checked with pin gauge  
according to Application Note  
AN-HPD_ASSEMBLY  
All dimensions refer to module in  
delivery condition  
Figure 3  
Datasheet  
12  
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
8 Module label code  
8
Module label code  
Module label code  
Code format  
Encoding  
Data Matrix  
ASCII text  
Barcode Code128  
Code Set A  
23 digits  
Symbol size  
Standard  
16x16  
IEC24720 and IEC16022  
IEC8859-1  
Code content  
Content  
Digit  
1 – 5  
6 - 11  
12 - 19  
20 – 21  
22 – 23  
Example  
71549  
142846  
55054991  
15  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
30  
Example  
71549142846550549911530  
71549142846550549911530  
Packing label code  
Code format  
Encoding  
Barcode Code128  
Code Set A  
Symbol size  
Standard  
34 digits  
IEC8859-1  
Code content  
Content  
Identifier  
X
1T  
S
9D  
Q
Digit  
2 – 9  
12 – 19  
21 – 25  
28 – 31  
33 – 34  
Example  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
95056609  
2X0003E0  
754389  
1139  
15  
Example  
X950566091T2X0003E0S754389D1139Q15  
Figure 4  
Datasheet  
13  
1.00  
2021-03-23  
FS03MR12A6MA1B  
HybridPACK Drive module  
Revision history  
Revision history  
Revision  
Date of release Description of changes  
v1.0  
v1.1  
-
2017-11-06  
2018-11-28  
-
Target datasheet  
Target datasheet  
Datasheet migrated to new system:¨  
Layout changed  
Revision number scheme changed: 0.xy = Target/Preliminary; 1.xy =  
Final  
1.00  
2021-03-23  
Final datasheet  
Datasheet  
14  
1.00  
2021-03-23  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
Edition 2021-03-23  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
IMPORTANT NOTICE  
WARNINGS  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Btschafftnhtiꢀsgaeanꢀit”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
third party.  
In addition, any information given in this document is  
subject to customer’s compliance with its obligations  
stated in this document and any applicable legal  
requirements, norms and standards concerning  
customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies offict.  
Except as otherwise explicitly approved by Infineon  
Technologies in  
authorized representatives of Infineon Technologies,  
Infineon Technologies’ products may not be used in  
any applications where a failure of the product or  
any consequences of the use thereof can reasonably  
be expected to result in personal injury.  
a written document signed by  
©
2021 Infineon Technologies AG  
All Rights Reserved.  
Do you have a question about any  
aspect of this document?  
Email: erratum@infineon.com  
Document reference  
IFX-  
The data contained in this document is exclusively  
intended for technically trained sꢀaff. It is the  
responsibility of customer’s technical departments to  
evaluate the suitability of the product for the intended  
application and the completeness of the product  
information given in this document with respect to such  
application.  

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