FS150R07N3E4B11BOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-35;
FS150R07N3E4B11BOSA1
型号: FS150R07N3E4B11BOSA1
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-35

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文件: 总9页 (文件大小:669K)
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FS150R07PE4BOSA1

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20

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0 INFINEON

FS150R12KE3

IGBT-modules

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173 EUPEC

FS150R12KE3

IGBT-Module

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177 EUPEC

FS150R12KE3_03

IGBT-modules

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14 EUPEC

FS150R12KE3G

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-29

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4 INFINEON

FS150R12KE3GBOSA1

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-29

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0 INFINEON

FS150R12KF4

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)

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45 ETC

FS150R12KT3

IGBT-Module

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329 EUPEC

FS150R12KT3

EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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116 EUPEC

FS150R12KT3_04

EconoPACK3 with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode

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31 EUPEC

FS150R12KT4

EconoPACK3 module with trench/fieldstop IGBT4 and EmCon4 diode

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306 INFINEON

FS150R12KT4_B11

EconoPACK3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode

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76 INFINEON

FS150R12KT4_B9

EconoPACK3 module with trench/fieldstop IGBT4 and doubled mounting Emitter Controlled 4 diode

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90 INFINEON

FS150R12KT4B11BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FS150R12KT4B9BDLA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-33

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0 INFINEON