FS3L400R10W3S7F_B11 [INFINEON]

PressFIT;
FS3L400R10W3S7F_B11
型号: FS3L400R10W3S7F_B11
厂家: Infineon    Infineon
描述:

PressFIT

文件: 总16页 (文件大小:668K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FS3L400R10W3S7F_B11  
EasyPACK module  
EasyPACK module with TRENCHSTOP IGBT7 and CoolSiC Schottky diode and PressFIT / NTC  
Features  
• Electrical features  
- VCES = 950 V  
- IC nom = 200 A / ICRM = 300 A  
- CoolSiCTM Schottky diode gen 5  
- Low switching losses  
- TRENCHSTOPTM IGBT7  
• Mechanical features  
- Integrated NTC temperature sensor  
- Al2O3 substrate with low thermal resistance  
- PressFIT contact technology  
- Compact design  
Potential applications  
• Three-level applications  
• Solar applications  
• UPS systems  
Product validation  
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068  
Description  
Datasheet  
www.infineon.com  
Please read the sections "Important notice" and "Warnings" at the end of this document  
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
Table of contents  
Table of contents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
IGBT, Boost . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Diode, Reverse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5  
Diode, Boost . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16  
1
2
3
4
5
6
7
8
9
Datasheet  
2
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
1 Package  
1
Package  
Table 1  
Insulation coordination  
Symbol Note or test condition  
Parameter  
Values  
3.2  
Unit  
Isolation test voltage  
Internal isolation  
Creepage distance  
Creepage distance  
Clearance  
VISOL  
RMS, f = 50 Hz, t = 1 min  
kV  
basic insulation (class 1, IEC 61140)  
Al2O3  
11.2  
6.8  
dCreep terminal to heatsink  
mm  
mm  
mm  
mm  
dCreep terminal to terminal  
dClear terminal to heatsink  
dClear terminal to terminal  
CTI  
9.4  
Clearance  
5.5  
Comparative tracking  
index  
> 400  
Relative thermal index  
(electrical)  
RTI  
housing  
140  
°C  
Table 2  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
18  
Unit  
Min.  
Max.  
Stray inductance module  
Storage temperature  
LsCE  
nH  
°C  
Tstg  
M
-40  
1.3  
125  
1.5  
Mounting torque for  
module mounting  
- Mounting according to M5, Screw  
valid application note  
Nm  
Weight  
G
78  
g
Note:  
The current under continuous operation is limited to 25A rms per connector pin.  
2
IGBT, Boost  
Table 3  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
950  
Unit  
Collector-emitter voltage  
VCES  
ICN  
Tvj = 25 °C  
TH = 65 °C  
V
A
Implemented collector  
current  
200  
Continuous DC collector  
current  
ICDC  
ICRM  
VGES  
Tvj max = 175 °C  
120  
300  
20  
A
A
V
Repetitive peak collector  
current  
tp limited by Tvj op  
Gate-emitter peak voltage  
Datasheet  
3
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
2 IGBT, Boost  
Table 4  
Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
1.23  
1.27  
1.27  
5.10  
0.45  
1.5  
Unit  
Min.  
Max.  
Collector-emitter  
saturation voltage  
VCE sat IC = 45 A, VGE = 15 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.48  
V
Gate threshold voltage  
Gate charge  
VGEth  
QG  
IC = 3.25 mA, VCE = VGE, Tvj = 25 °C  
4.35  
5.85  
V
VGE = 15 V, VCC = 600 V  
Tvj = 25 °C  
µC  
Internal gate resistor  
Input capacitance  
RGint  
Cies  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V  
12.6  
0.039  
nF  
nF  
Reverse transfer  
capacitance  
Cres  
Collector-emitter cut-off  
ICES  
IGES  
tdon  
VCE = 950 V, VGE = 0 V  
Tvj = 25 °C  
0.026 mA  
current  
Gate-emitter leakage  
current  
VCE = 0 V, VGE = 20 V, Tvj = 25 °C  
100  
nA  
µs  
Turn-on delay time  
(inductive load)  
IC = 45 A, VCC = 500 V,  
VGE = 15 V, RGon = 3.9 Ω  
Tvj = 25 °C  
0.068  
0.078  
0.080  
0.007  
0.008  
0.009  
0.198  
0.263  
0.280  
0.043  
0.089  
0.097  
0.473  
0.544  
0.557  
1.14  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Rise time (inductive load)  
tr  
tdoff  
tf  
IC = 45 A, VCC = 500 V,  
VGE = 15 V, RGon = 3.9 Ω  
µs  
µs  
Turn-off delay time  
(inductive load)  
IC = 45 A, VCC = 500 V,  
VGE = 15 V, RGoff = 1.5 Ω  
Fall time (inductive load)  
IC = 45 A, VCC = 500 V,  
VGE = 15 V, RGoff = 1.5 Ω  
µs  
Turn-on energy loss per  
pulse  
Eon  
Eoff  
RthJH  
IC = 45 A, VCC = 500 V,  
Lσ = 35 nH, VGE = 15 V,  
RGon = 3.9 Ω, di/dt =  
4000 A/µs (Tvj = 150 °C)  
mJ  
mJ  
K/W  
Turn-off energy loss per  
pulse  
IC = 45 A, VCC = 500 V,  
Lσ = 35 nH, VGE = 15 V,  
RGoff = 1.5 Ω, dv/dt =  
3200 V/µs (Tvj = 150 °C)  
1.95  
2.19  
Thermal resistance,  
junction to heat sink  
per IGBT, λgrease = 3.3 W/(m·K)  
0.433  
(table continues...)  
Datasheet  
4
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
3 Diode, Reverse  
Table 4  
(continued) Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
Unit  
Min.  
Max.  
Temperature under  
switching conditions  
Tvj op  
-40  
150  
°C  
3
Diode, Reverse  
Table 5  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
Tvj = 25 °C  
1200  
V
Continuous DC forward  
current  
IF  
75  
A
A
Repetitive peak forward  
current  
I2t - value  
IFRM  
I2t  
tP = 1 ms  
150  
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 175 °C  
453  
392  
A²s  
Table 6  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.72  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IF = 75 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
2.10  
V
1.59  
1.52  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 3.3 W/(m·K)  
0.933  
K/W  
°C  
Temperature under  
switching conditions  
-40  
175  
Note:  
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN  
2018-14.  
4
Diode, Boost  
Table 7  
Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Repetitive peak reverse  
voltage  
VRRM  
Tvj = 25 °C  
1200  
V
(table continues...)  
Datasheet  
5
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
5 NTC-Thermistor  
Table 7  
(continued) Maximum rated values  
Parameter  
Symbol Note or test condition  
Values  
Unit  
Continuous DC forward  
current  
IF  
60  
A
Repetitive peak forward  
current  
I2t - value  
IFRM  
I2t  
tP = 1 ms  
120  
A
tP = 10 ms, VR = 0 V  
Tvj = 125 °C  
Tvj = 150 °C  
472  
450  
A²s  
Table 8  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
1.38  
Unit  
Min.  
Max.  
Forward voltage  
VF  
IRM  
Qr  
IF = 45 A, VGE = 0 V  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 150 °C  
1.58  
V
1.52  
1.60  
Peak reverse recovery  
current  
VCC = 500 V, IF = 45 A,  
VGE=-15 V, -diF/dt = 4000  
A/µs (Tvj = 150 °C)  
46.2  
A
46.2  
46.2  
Recovered charge  
VCC = 500 V, IF = 45 A,  
VGE=-15 V, -diF/dt = 4000  
A/µs (Tvj = 150 °C)  
1.27  
µC  
mJ  
1.27  
1.27  
Reverse recovery energy  
Erec  
VCC = 500 V, IF = 45 A,  
VGE=-15 V, -diF/dt = 4000  
A/µs (Tvj = 150 °C)  
0.128  
0.128  
0.128  
0.689  
Thermal resistance,  
junction to heat sink  
RthJH  
Tvj op  
per diode, λgrease = 3.3 W/(m·K)  
K/W  
°C  
Temperature under  
switching conditions  
-40  
150  
5
NTC-Thermistor  
Table 9  
Characteristic values  
Symbol Note or test condition  
Parameter  
Values  
Typ.  
5
Unit  
Min.  
Max.  
Rated resistance  
Deviation of R100  
Power dissipation  
R25  
ΔR/R  
P25  
TNTC = 25 °C  
kΩ  
%
TNTC = 100 °C, R100 = 493 Ω  
TNTC = 25 °C  
-5  
5
20  
mW  
K
B-value  
B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]  
3375  
(table continues...)  
Datasheet  
6
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
5 NTC-Thermistor  
Table 9  
(continued) Characteristic values  
Parameter  
Symbol Note or test condition  
Values  
Typ.  
Unit  
Min.  
Max.  
B-value  
B-value  
B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]  
B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]  
3411  
K
K
3433  
Note:  
Specification according to the valid application note.  
Datasheet  
7
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
6 Characteristics diagrams  
6
Characteristics diagrams  
Output characteristic (typical), IGBT, Boost  
Output characteristic field (typical), IGBT, Boost  
IC = f(VCE)  
IC = f(VCE)  
VGE = 15 V  
Tvj = 150 °C  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
Transfer characteristic (typical), IGBT, Boost  
IC = f(VGE)  
Capacity characteristic (typical), IGBT, Boost  
C = f(VCE)  
VCE = 20 V  
f = 100 kHz, VGE = 0 V, Tvj = 25 °C  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
10  
1
0.1  
0.01  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
0
10 20 30 40 50 60 70 80 90 100  
Datasheet  
8
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
6 Characteristics diagrams  
Gate charge characteristic (typical), IGBT, Boost  
VGE = f(QG)  
Switching losses (typical), IGBT, Boost  
E = f(IC)  
IC = 200 A, Tvj = 25 °C  
RGoff = 1.5 Ω, RGon = 3.9 Ω, VCC = 500 V, VGE = 15 V  
15  
10  
5
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
-5  
-10  
-15  
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50  
0
15  
30  
45  
60  
75  
90  
Switching losses (typical), IGBT, Boost  
E = f(RG)  
Switching times (typical), IGBT, Boost  
t = f(IC)  
IC = 45 A, VCC = 500 V, VGE = 15 V  
RGoff = 1.5 Ω, RGon = 3.9 Ω, VCC = 500 V, VGE = 15 V, Tvj =  
150 °C  
3.00  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
10  
1
0.1  
0.01  
0.001  
0
5
10  
15  
20  
25  
30  
35  
40  
0
15  
30  
45  
60  
75  
90  
Datasheet  
9
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
6 Characteristics diagrams  
Switching times (typical), IGBT, Boost  
t = f(RG)  
Reverse bias safe operating area (RBSOA), IGBT, Boost  
IC = f(VCE)  
IC = 45 A, VCC = 500 V, VGE = 15 V, Tvj = 150 °C  
RGoff = 1.5 Ω, VGE = 15 V, Tvj = 150 °C  
10  
350  
300  
250  
200  
150  
100  
50  
1
0.1  
0.01  
0.001  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
100 200 300 400 500 600 700 800 900 1000  
Transient thermal impedance , IGBT, Boost  
Forward characteristic (typical), Diode, Reverse  
Zth = f(t)  
IF = f(VF)  
1
150  
135  
120  
105  
90  
75  
0.1  
60  
45  
30  
15  
0
0.01  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25  
0.001  
0.01  
0.1  
1
10  
Datasheet  
10  
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
6 Characteristics diagrams  
Transient thermal impedance, Diode, Reverse  
Forward characteristic (typical), Diode, Boost  
Zth = f(t)  
IF = f(VF)  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
1
0.1  
0
0.01  
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50  
0.001  
0.01  
0.1  
1
10  
Switching losses (typical), Diode, Boost  
Erec = f(IF)  
Switching losses (typical), Diode, Boost  
Erec = f(RG)  
RGon = 3.9 Ω, VCC = 500 V  
IF = 45 A, VCC = 500 V  
0.50  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
0.50  
0.45  
0.40  
0.35  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
5
10  
15  
20  
25  
30  
35  
40  
Datasheet  
11  
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
6 Characteristics diagrams  
Transient thermal impedance, Diode, Boost  
Zth = f(t)  
Temperature characteristic (typical), NTC-Thermistor  
R = f(TNTC  
)
1
100000  
10000  
1000  
0.1  
100  
0.01  
0
25  
50  
75  
100  
125  
150  
175  
0.001  
0.01  
0.1  
1
10  
Datasheet  
12  
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
7 Circuit diagram  
7
Circuit diagram  
Figure 1  
8
Package outlines  
dimensioned for EJOT Delta PT WN5451 25  
choose length according to pcb thickness  
max. screw-in depth 8,5mm  
4x  
r
e
h
s
a
4x P3,5  
pcb hole pattern  
(P4,2)  
w
d
a
e
h
w
26  
24  
e
DC1+  
DC1N  
DC1-  
DC2-  
DC2N  
DC2+  
r
c
s
20,8  
17,6  
14,4  
11,2  
8
o
t
1
,
g
0
n
i
2
14  
B
d
GA2  
EA2  
BSTC-  
EC2  
GC2  
1
r
4
,
P
o
5
c
x
c
P
2
a
BSTA+  
x
2
4,8  
1,6  
5
BSTA-  
NTC1  
NTC2  
4
,
0
0
B
0
2
6
GA1  
EA1  
EB1  
4,8  
8
EC1 GC1  
GB1  
14  
)
4
17,6  
20,8  
24  
,
3
P
(
26  
BSTB+  
BSTB- EB2 GB2  
BSTC+  
0
3
3
4
4
,
,
7
7
4
4
0
3
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
8
3
0
8
6
2
0
8
6
2
0
0
2
6
8
0
2
6
8
0
4
4
4
4
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
(99,3 B0,1) Distance of threaded holes in heatsink  
6
2
9
3
0
6
3
7
7
3
6
0
3
9
2
6
0
4
4
0
4
4
1
1
1
1
1
1
3
3
2
2
2
2
2
2
3
3
4
4
109,85B0,45  
1
0
- Details about hole specification for contacts refer to AN2009-01 chapter 2  
.
9
2
8
- Diameters of drill P1,15mm  
3
8
1
- Copper thickness in hole 25~50um  
0
0
1
W
,
0
)
2
)
B
1
4
(
2
,
,
6
2
1
1
(
recommended pcb design height  
Figure 2  
Datasheet  
13  
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
9 Module label code  
9
Module label code  
Module label code  
Code format  
Encoding  
Data Matrix  
ASCII text  
Barcode Code128  
Code Set A  
23 digits  
Symbol size  
Standard  
16x16  
IEC24720 and IEC16022  
IEC8859-1  
Code content  
Content  
Digit  
1 – 5  
6 - 11  
12 - 19  
20 – 21  
22 – 23  
Example  
Module serial number  
Module material number  
Production order number  
Date code (production year)  
Date code (production week)  
71549  
142846  
55054991  
15  
30  
Example  
71549142846550549911530  
71549142846550549911530  
Figure 3  
Datasheet  
14  
Revision 1.00  
2022-08-24  
FS3L400R10W3S7F_B11  
EasyPACK module  
Revision history  
Revision history  
Document revision  
Date of release Description of changes  
0.10  
1.00  
2022-04-29  
2022-08-24  
Initial version  
Final datasheet  
Datasheet  
15  
Revision 1.00  
2022-08-24  
Trademarks  
All referenced product or service names and trademarks are the property of their respective owners.  
Edition 2022-08-24  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
Important notice  
Warnings  
The information given in this document shall in no  
event be regarded as a guarantee of conditions or  
characteristics (“Beschaffenheitsgarantie”).  
With respect to any examples, hints or any typical  
values stated herein and/or any information regarding  
the application of the product, Infineon Technologies  
hereby disclaims any and all warranties and liabilities  
of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any  
third party.  
In addition, any information given in this document is  
subject to customer’s compliance with its obligations  
stated in this document and any applicable legal  
requirements, norms and standards concerning  
customer’s products and any use of the product of  
Infineon Technologies in customer’s applications.  
Due to technical requirements products may contain  
dangerous substances. For information on the types  
in question please contact your nearest Infineon  
Technologies office.  
Except as otherwise explicitly approved by Infineon  
Technologies in  
authorized representatives of Infineon Technologies,  
Infineon Technologies’ products may not be used in  
any applications where a failure of the product or  
any consequences of the use thereof can reasonably  
be expected to result in personal injury.  
a written document signed by  
©
2022 Infineon Technologies AG  
All Rights Reserved.  
Do you have a question about any  
aspect of this document?  
Email: erratum@infineon.com  
Document reference  
IFX-ABD624-002  
The data contained in this document is exclusively  
intended for technically trained staff. It is the  
responsibility of customer’s technical departments to  
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