FS650R08A4P2 [INFINEON]
Wave baseplate;
| 型号： | FS650R08A4P2 |
| 厂家： | 
Infineon |
| 描述： | Wave baseplate |
| 文件： | 总17页 (文件大小：2483K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HybridPACK™ꢀDC6ꢀModule
FS650R08A4P2
DC6iꢀvariant
FinalꢀDataꢀSheet
V3.0,ꢀ2020-05-06
AutomotiveꢀHighꢀPower
FS650R08A4P2
HybridPACK™ꢀDC6ꢀModule
1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription
HybridPACK™ꢀDC6iꢀmoduleꢀwithꢀEDT2ꢀIGBTꢀandꢀDiode
T
T
T
VCES = 750 V
IC = 650 A
Typical Applications
Description
• Automotive Applications
• Hybrid Electrical Vehicles (H)EV
• Motor Drives
• Commercial Agriculture Vehicles
• Optimized for automotive applications with DC link
The HybridPACKTM DC6i is a very compact six-pack
module (750V/650A) optimized for hybrid and
electric vehicles. The power module implements the
new EDT2 IGBT generation, which is an automotive
Micro-Pattern Trench-Field-Stop cell design
optimized for electric drive train applications. The
chipset has benchmark current density combined
with short circuit ruggedness and increased
blocking voltage for reliable inverter operation under
harsh environmental conditions. The EDT2 IGBTs
also show excellent light load power losses, which
helps to improve system efficiency over a real
driving cycle. The EDT2 IGBT was optimized for
applications with switching frequencies in the range
of 10 kHz.
voltages up to 470 V
Electrical Features
• Blocking voltage 750V
• Low VCEsat
• Low Switching Losses
• Low Qg and Crss
• Low Inductive Design
• Tvj op = 150°C
The new HybridPACKTM DC6i power module family
comes with mechanical guiding elements
• Short-time extended Operation Temperature
Tvj op = 175°C
supporting easy assembly processes for customers.
Furthermore, the press-fit pins for the signal
terminals avoid additional time consuming selective
solder processes, which provides cost savings on
system level and increases system reliability. The
direct cooled baseplate with ribbon bonds structure
in the FS650R08A4P2 product shows superior
thermal characteristics. Due to the high clearance &
creepage distances, the module family is also well
suited for increased system working voltages and
supports modular inverter approaches.
Mechanical Features
• 2.5kV AC 1min Insulation
• High Creepage and Clearance Distances
• Compact design
• High Power Density
• Direct Cooled Base Plate with Ribbon Bonds
• Guiding elements for PCB and cooler assembly
• Integrated NTC temperature sensor
• PressFIT Contact Technology
• RoHS compliant
Product Name
Ordering Code
SP001714512
FS650R08A4P2
Final Data Sheet
2
V3.0,ꢀꢀ2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
2
IGBT,Inverter
2.1 Maximum Rated Values
Parameter
Conditions
Symbol
VCES
ICN
Value
750
Unit
V
Collector-emitter voltage
Tvj = 25°C
Implemented collector current
Continuous DC collector current
Repetitive peak collector current
Total power dissipation
650
A
TF = 65°C, Tvj max = 175°C
tP = 1 ms
IC nom
ICRM
3751)
1300
4881)
+/-20
A
A
TF = 75°C, Tvj max = 175°C
Ptot
W
V
Gate-emitter peak voltage
VGES
2.2 Characteristic Values
min. typ. max.
Collector-emitter saturation voltage
IC = 375 A, VGE = 15 V
IC = 375 A, VGE = 15 V
IC = 375 A, VGE = 15 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
1.10 1.35
1.15
1.15
VCE sat
V
V
IC = 650 A, VGE = 15 V
IC = 650 A, VGE = 15 V
Tvj = 25°C
Tvj = 175°C
1.30
1.45
Gate threshold voltage
IC = 11.5 mA, VCE = VGE
Tvj = 25°C
Tvj = 175°C
4.90 5.80 6.50
4,10
VGEth
Gate charge
VGE = -8 V ... 15 V, VCE = 400V
QG
RGint
Cies
Coes
Cres
ICES
IGES
3.55
1.0
µC
Ω
Internal gate resistor
Tvj = 25°C
Tvj = 25°C
Tvj = 25°C
Tvj = 25°C
Tvj = 25°C
Tvj = 25°C
Input capacitance
f = 1 MHz, VCE = 50 V, VGE = 0 V
f = 1 MHz, VCE = 50 V, VGE = 0 V
f = 1 MHz, VCE = 50 V, VGE = 0 V
VCE = 750 V, VGE = 0 V
65.0
0.83
0.25
1.0
nF
nF
nF
mA
nA
Output capacitance
Reverse transfer capacitance
Collector-emitter cut-off current
Gate-emitter leakage current
Turn-on delay time, inductive load
VCE = 0 V, VGE = 20 V
400
IC = 375 A, VCE = 400 V
VGE = -8 V / +15 V
RGon = 2.4 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
0.30
0.32
0.33
td on
µs
µs
µs
µs
Rise time, inductive load
IC = 375 A, VCE = 400 V
VGE = -8 V / +15 V
RGon = 2.4 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
0.07
0.08
0.08
tr
Turn-off delay time, inductive load
Fall time, inductive load
IC = 375 A, VCE = 400 V
VGE = -8 V / +15 V
RGoff = 5.1 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
0.80
0.88
0.92
td off
IC = 375 A, VCE = 400 V
VGE = -8 V / +15 V
RGoff = 5.1 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
0.06
0.07
0.08
tf
Turn-on energy loss per pulse
IC = 375 A, VCE = 400 V, LS = 20 nH
VGE = -8 V / +15 V
RGon = 2.4 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
8.00
11.5
13.0
Eon
mJ
di/dt (Tvj 25°C) = 7000 A/µs
di/dt (Tvj 175°C) = 4000 A/µs
Turn-off energy loss per pulse
IC = 375 A, VCE = 400 V, LS = 20 nH
VGE = -8 V / +15 V
RGoff = 5.1 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
18.0
23.5
24.5
Eoff
mJ
A
dv/dt (Tvj 25°C) = 3800 V/µs
dv/dt (Tvj 175°C) = 3300 V/µs
SC data
VGE ≤ 15 V, VCC = 400 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 6 µs, Tvj = 25°C
tP ≤ 3 µs, Tvj = 175°C
3900
3200
ISC
Thermal resistance, junction to cooling fluid per IGBT; ∆V/∆t = 10 dm³/min, TF = 75°C
RthJF
0.1702) 0.2052) K/W
1503)
Temperature under switching conditions
top continuous
-40
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
Tvj op
150
175
°C
1) Verified by characterization / design not by test.
2) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol.
3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
Final Data Sheet
3
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
3
Diode, Inverter
3.1 Maximum Rated Values
Parameter
Conditions
Symbol
VRRM
IFN
Value
750
Unit
V
Repetitive peak reverse voltage
Implemented forward current
Continuous DC forward current
Repetitive peak forward current
I²t - value
Tvj = 25°C
650
A
IF
3751)
A
tP = 1 ms
IFRM
1300
A
VR = 0 V, tP = 10 ms, Tvj = 150°C
VR = 0 V, tP = 10 ms, Tvj = 175°C
16500
14000
A²s
A²s
I²t
3.2 Characteristic Values
min. typ. max.
Forward voltage
IF = 375 A, VGE = 0 V
IF = 375 A, VGE = 0 V
IF = 375 A, VGE = 0 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
1.45 1.65
1.35
1.30
VF
V
IF = 650 A, VGE = 0 V
IF = 650 A, VGE = 0 V
Tvj = 25°C
Tvj = 175°C
1.70
1.60
Peak reverse recovery current
Recovered charge
IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) Tvj = 25°C
205
320
345
VR = 400 V
VGE = -8 V
Tvj = 150°C
Tvj = 175°C
IRM
A
IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) Tvj = 25°C
24.5
47.5
56.0
VR = 400 V
VGE = -8 V
Tvj = 150°C
Tvj = 175°C
Qr
µC
mJ
Reverse recovery energy
IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) Tvj = 25°C
8.60
16.0
19.0
VR = 400 V
VGE = -8 V
Tvj = 150°C
Tvj = 175°C
Erec
RthJF
Tvj op
Thermal resistance, junction to cooling fluid per diode; ∆V/∆t = 10 dm³/min, TF = 75°C
Temperature under switching conditions top continuous
0.2302) 0.2752) K/W
1503)
-40
150
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
175
°C
4
NTC-Thermistor
min. typ. max.
Parameter
Conditions
Symbol
R25
Value
Unit
kΩ
%
Rated resistance
Deviation of R100
Power dissipation
B-value
TC = 25°C
5.00
TC = 100°C, R100 = 493 Ω
TC = 25°C
∆R/R
P25
-5
5
20.0 mW
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
3375
3411
3433
K
K
K
B-value
B-value
Specification according to the valid application note.
1) Verified by characterization / design not by test.
2) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol.
3) For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
Final Data Sheet
4
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
5
Module
Parameter
Conditions
Symbol
Value
2.5
Unit
Isolation test voltage
Material of module baseplate
Internal isolation
RMS, f = 50 Hz, t = 1 min
VISOL
kV
Cu/Ni/Al1)
2)
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
terminal to heatsink
terminal to terminal
18.2
8.2
dCreep
mm
mm
Clearance
terminal to heatsink
terminal to terminal
18.2
5.9
dClear
CTI
Comperative tracking index
> 200
min. typ. max.
Pressure drop in cooling circuit
∆V/∆t = 10.0 dm³/min; TF = 75°C
∆p
903)
mbar
bar
Maximum pressure in cooling circuit
Tbaseplate < 40°C
Tbaseplate ≥ 40°C
(relative pressure)
2.5
2.0
p
Stray inductance module
Storage temperature
LsCE
Tstg
M
15
nH
°C
-40
3.00
3.0
125
Mounting torque for modul mounting
Terminal connection torque
Weight
Screw M5 baseplate to heatsink
Screw M5
6.00 Nm
M
-
6.0
Nm
g
G
490
1) Ni plated Cu baseplate with Al ribbon bonds.
2) Improved Al2O3 ceramic.
3) Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol.
Final Data Sheet
5
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
6
Characteristics Diagrams
output characteristic IGBT,Inverter (typical)
IC = f (VCE
output characteristic IGBT,Inverter (typical)
IC = f (VCE
)
)
VGE = 15 V
Tvj = 150°C
1300
1300
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
VGE = 19V
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0
VCE [V]
VCE [V]
transfer characteristic IGBT,Inverter (typical)
switching losses IGBT,Inverter (typical)
Eon = f (IC), Eoff = f (IC),
IC = f (VGE
)
VCE = 20 V
VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V
1300
55
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
1200
1100
1000
900
800
700
600
500
400
300
200
100
50
45
40
35
30
25
20
15
10
5
0
5
0
6
7
8
9
10
11
12
0
100
200
300
400
500
600
700
VGE [V]
IC [A]
Final Data Sheet
6
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
switching losses IGBT,Inverter (typical)
Eon = f (RG), Eoff = f (RG),
transient thermal impedance IGBT,Inverter
ZthJF = f (t), cooler design according to AN-HPDC6i
VGE = +15V / -8V, IC = 450 A, VCE = 400 V
∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol
80
1
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
ZthJF : IGBT
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
70
60
0,1
50
40
30
20
10
0
0,01
i:
1
2
3
4
ri[K/W]: 0,01 0,07 0,08 0,045
τi[s]:
0,001 0,03 0,25 1,5
0,001
0,001
0
2
4
6
8
10 12 14 16 18 20 22 24
0,01
0,1
1
10
RG [Ω]
t [s]
reverse bias safe operating area IGBT,Inverter (RBSOA)
IC = f (VCE
thermal impedance IGBT,Inverter
RthJF = f (∆V/∆t), cooler design according to AN-HPDC6i
)
VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C
Tf = 75°C; 50% water / 50% ethylenglycol
1400
0,225
RthJF: IGBT
1300
1200
1100
1000
900
0,220
0,215
0,210
0,205
0,200
0,195
800
700
600
500
400
300
IC, Modul
IC, Chip
200
100
0
0
100
200
300
400
VCE [V]
500
600
700
800
4
5
6
7
8
9
10
11
12
13
14
∆V/∆t [dm³/min]
Final Data Sheet
7
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
capacity characteristic IGBT,Inverter (typical)
C = f(VCE
gate charge characteristic IGBT,Inverter (typical)
VGE = f(QG)
)
VGE = 0 V, Tvj = 25°C, f = 1MHz
VCE = 400 V, IC = 450 A, Tvj = 25°C
100
15
QG
12
9
Cies
Coes
Cres
10
6
3
0
1
-3
-6
-9
0,1
0
100
200
300
400
500
0,0
0,5
1,0
1,5
2,0
QG [µC]
2,5
3,0
3,5
4,0
VCE [V]
maximum allowed collector-emitter voltage
VCES = f(Tvj), verified by characterization / design not by test
voltage slope IGBT,Inverter (typical)
dv/dt = f (RG)
ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C
VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj = 150°C
800
3,5
VCES
dv/dtoff: IGBT
dv/dton: IGBT
3,0
2,5
2,0
1,5
1,0
0,5
0,0
775
750
725
700
675
650
-50 -25
0
25
50
75 100 125 150 175 200
Tvj [°C]
0
2
4
6
8
10 12 14 16 18 20 22 24
RG [Ω]
Final Data Sheet
8
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
current slope IGBT,Inverter (typical)
di/dt = f (RG),
forward characteristic of Diode, Inverter (typical)
IF = f (VF)
VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj= 150°C
6
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
di/dtoff: IGBT
di/dton: IGBT
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
5
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18 20 22 24
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
RG [Ω]
VF [V]
switching losses Diode, Inverter (typical)
Erec = f (IF),
switching losses Diode, Inverter (typical)
Erec = f (RG),
RGon = 2.4 Ω, VCE = 400 V
IF = 375 A, VCE = 400 V
28
22
Erec, Tvj = 150°C
Erec, Tvj = 175°C
Erec, Tvj = 150°C
Erec, Tvj = 175°C
26
20
24
22
20
18
16
14
12
10
8
18
16
14
12
10
8
6
6
4
4
2
2
0
0
0
100
200
300 400
IF [A]
500
600
700
0
2
4
6
8
10 12 14 16 18 20 22 24
RG [Ω]
Final Data Sheet
9
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
transient thermal impedance Diode, Inverter
safe operation area Diode, Inverter (SOA)
ZthJF = f(t), cooler design according to AN-HPDC6i
∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol
IR = f(VR)
Tvj = 150°C
1
1400
1300
1200
1100
1000
900
ZthJF : Diode
0,1
800
700
600
500
0,01
400
IR, RGon = 0.50 Ω
IR, RGon = 0.75 Ω
IR, RGon = 1.00 Ω
300
200
i:
1
2
3
4
ri[K/W]: 0,017 0,12 0,1 0,038
τi[s]:
0,001 0,03 0,25 1,5
100
0,001
0,001
0
0
0,01
0,1
t [s]
1
10
100
200
300
400
VR [V]
500
600
700
800
thermal impedance Diode, Inverter
RthJF = f(∆V/∆t), cooler design according to AN-HPDC6i
NTC-Thermistor-temperature characteristic (typical)
R = f (T)
Tf = 75°C; 50% water / 50% ethylenglycol
0,295
100000
RthJF: Diode
Rtyp
0,290
0,285
0,280
0,275
0,270
0,265
10000
1000
100
4
5
6
7
8
9
10
11
12
13
14
0
20
40
60
80
TC [°C]
100
120
140
160
∆V/∆t [dm³/min]
Final Data Sheet
10
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
pressure drop in cooling circuit
∆p = f (∆V/∆t), cooler design according to AN-HPDC6i
Tf = 75°C; 50% water / 50% ethylenglycol
160
∆p: Modul
140
120
100
80
60
40
20
0
4
5
6
7
8
9
10
11
12
13
14
∆V/∆t [dm³/min]
Final Data Sheet
11
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
7
Circuit diagram
H_P_DC6i
P1
P2
P3
T1
C1
C3
C5
T
T2
G1
E1
G3
E3
G5
E5
T3
U
V
W
T
T4
T5
G2
E2
G4
E4
G6
E6
T
T6
N1
N2
N3
Final Data Sheet
12
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
8
Package outlines
5
,
5
,
0
5
0
,
140B0,4
B
0
B
5
,
B
5
6
3
5
,
,
2
0
1
1
2
2
63,55
62,85
)
x
9
(
102,4 max. Reserved area
A
5
,
0
47,6
43,5
36,8
3,05 max. loop height
B
5
43B0,3
0
,
4
7
,
1
0
B
29,05
21,75
6
C ( 5 : 1 )
,
A ( 2 : 1 )
(4)
2
1
1
14B0,3
C
6,9
0
0
5,85
6,55
)
2
(
** Pin positions checked
with pin gauge according
to Application Note
0
1
5
5
5
8
5
5
2
5
5
5
9
4
,
,
,
,
,
,
1
**ABC
21x
6
3
8
6
3
6
L
7
,
,
5
,
,
3
,
2
,
0
4
2
3
2
7
5
8
0
0
2
4
4
6
1
1
P6,6B0,1
2
2
6
0
0
1
1
P1,0ABC
L
9x
(15)
D-D ( 1 : 1 )
V
W
U
77,5
P1,0ABC
L
5
1
9,8 min.
,
P0,2ABC
L
3x
0
B
D
D
B
1
,
9
,
0
4
57
B
a
P
e
4
E5
G5
E3
A
,
r
E1
G1
2
a
G3
C3
T4
P
d
C
e
C5
C1
T1
v
r
for Ejot
PT30x10
e
5
5
T6
s
T2
0
1
,
,
e
0
0
T5
T3
R
(23,57)
+
-
.
x
5
G2
E2
G4
E4
a
,
G6
5
m
P
4
E6
,
5
8
B ( 2 : 1 )
10,5 min.
1
,
4
0
0
B
4
,
5
P
B
5
M
20,5
N1
N3
P2
N2
P1
P3
12,85B0,2 (4x) (Control board height)
All dimensions are measured in the delivered state.
)
0
1
1
7
2
3
5
6
7
8
4
6
1
1
1
1
3
5
7
9
2
6
1
5
1
1
(
Sprue area, max. height 0,6mm
Final Data Sheet
13
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
9
Label Codes
9.1 Module Code
Code Format
Data Matrix
Encoding
ASCII Text
Symbol Size
Standard
16x16
IEC24720 and IEC16022
Code Content
Content
Digit
1 - 5
6 - 11
12 - 19
20 - 21
22 - 23
Example (below)
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
71549
142846
55054991
15
30
Example
71549142846550549911530
9.2 Packing Code
Code Format
Code128
Code Set A
34 digits
Encoding
Symbol Size
Standard
IEC8859-1
Code Content
Content
Identifier
X
1T
S
9D
Q
Digit
2 - 9
12 - 19
21 - 25
28 - 31
33 - 34
Example (below)
Backend Construction Number
Production Lot Number
Serial Number
Date Code
Box Quantity
95056609
2X0003E0
754389
1139
15
Example
X950566091T2X0003E0S754389D1139Q15
Final Data Sheet
14
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
Revision History
Major changes since previous revision
Revision History
Reference
V1.0
Date
Description
2017-08-31
2018-01-18
2018-06-25
2019-02-12
2019-10-30
2020-05-06
Target datasheet
V1.1
Change of package designation
Extention of target data (E, Rth, ...)
New package outlines / pinning
Preliminary datasheet
Final datasheet
V1.2
V1.3
V2.0
V3.0
Final Data Sheet
15
V3.0, 2020-05-06
FS650R08A4P2
HybridPACK™ DC6 Module
Terms & Conditions of usage
Edition 2018-08-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any
examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon
Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office
(http://www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the
nearest Infineon Technologies Office.
These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life
support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact
your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review
product requirements and reliability testing.
Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class
III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Trademarks
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,
DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,
HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,
µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of
DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION
FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor
Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,
MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave
Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun
Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.
VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of
WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last update
2011-11-11
Final Data Sheet
16
V3.0, 2020-05-06
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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