FS660R08A6P2FLB [INFINEON]

Flat Baseplate;


型号：	FS660R08A6P2FLB
厂家：	Infineon
描述：	Flat Baseplate
文件：	总15页 (文件大小：6231K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HybridPACK™ꢀDriveꢀModule

FS660R08A6P2FLB

FinalꢀDataꢀSheet

V3.0,ꢀ2019-05-20

AutomotiveꢀHighꢀPower

FS660R08A6P2FLB

HybridPACK™ꢀDriveꢀModule

1ꢀꢀꢀꢀꢀFeaturesꢀ/ꢀDescription

HybridPACK™ꢀDriveꢀmoduleꢀwithꢀEDT2ꢀIGBTꢀandꢀDiode

V_CES= 750 V

I_C= 660 A

Typical Applications

Description

• Automotive Applications

• Hybrid Electrical Vehicles (H)EV

• Motor Drives

The HybridPACK^TMDrive is a very compact

six-pack module optimized for hybrid and electric

vehicles. The product FS660R08A6P2FLB comes

with a flat baseplate and is a 750V/660A module

derivate within the HybridPACK Drive family. The

power module implements the new EDT2 IGBT

generation, which is an automotive Micro-Pattern

Trench-Field-Stop cell design optimized for electric

drive train applications. The chipset has benchmark

current density combined with short circuit

ruggedness and increased blocking voltage for

reliable inverter operation under harsh

• Commercial Agriculture Vehicles

Electrical Features

• Blocking voltage 750V

• Low V_CEsat

• Low Switching Losses

• Low Qg and Crss

• Low Inductive Design

• T_{vj op}= 150°C

environmental conditions. The EDT2 IGBTs also

show excellent light load power losses, which helps

to improve system efficiency over a real driving

cycle. The EDT2 IGBT was optimized for

applications with switching frequencies in the range

of 10 kHz.

• Short-time extended Operation Temperature

T_{vj op}= 175°C

The new The HybridPACK^TMDrive power module

family comes with mechanical guiding elements

supporting easy assembly processes for customers.

Furthermore, the press-fit pins for the signal

terminals avoid additional time consuming selective

solder processes, which provides cost savings on

system level and increases system reliability. The

two products in the The HybridPACK^TMDrive family

with flat baseplate in the FS660R08A6P2FLB and

PinFin baseplate in the FS820R08A6P2LB allow a

very cost effective scaling for different inverter

power levels at a minimum inverter design effort.

Mechanical Features

• 4.2kV DC 1sec Insulation

• High Creepage and Clearance Distances

• Compact design

• High Power Density

• Copper Base Plate

• Guiding elements for PCB and cooler assembly

• Integrated NTC temperature sensor

• PressFIT Contact Technology

• RoHS compliant

• UL 94 V0 module frame

Product Name

Ordering Code

SP001850450

FS660R08A6P2FLB

Final Data Sheet

V3.0,ꢀꢀ2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

IGBT,Inverter

2.1 Maximum Rated Values

Parameter

Conditions

Symbol

V_CES

I_CN

Value

750

Unit

Collector-emitter voltage

T_vj= 25°C

Implemented collector current

Continuous DC collector current

Repetitive peak collector current

Total power dissipation

660

T_C= 80°C, T_{vj max}= 175°C

t_P= 1 ms

I_{C nom}

I_CRM

450¹⁾

1320

1053¹⁾

+/-20

T_C= 75°C, T_{vj max}= 175°C

P_tot

Gate-emitter peak voltage

V_GES

2.2 Characteristic Values

min. typ. max.

Collector-emitter saturation voltage

I_C= 450 A, V_GE= 15 V

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

1.10 1.35

1.15

V_{CE sat}

I_C= 660 A, V_GE= 15 V

T_vj= 25°C

T_vj= 175°C

1.25

1.35

Gate threshold voltage

I_C= 9.60 mA, V_CE= V_GE

T_vj= 25°C

T_vj= 175°C

4.90 5.80 6.50

4,10

V_GEth

Gate charge

V_GE= -8 V ... 15 V, V_CE= 400V

Q_G

R_Gint

C_ies

C_oes

C_res

4.40

0.7

µC

Ω

Internal gate resistor

Input capacitance

T_vj= 25°C

f = 1 MHz, V_CE= 50 V, V_GE= 0 V

80.0

1.00

0.30

Output capacitance

Reverse transfer capacitance

Collector-emitter cut-off current

V_CE= 750 V, V_GE= 0 V

T_vj= 25°C

T_vj= 175°C

1.0

I_CES

I_GES

t_{d on}

Gate-emitter leakage current

V_CE= 0 V, V_GE= 20 V

T_vj= 25°C

400

Turn-on delay time, inductive load

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Gon= 2.4 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.28

0.29

0.30

µs

Rise time, inductive load

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Gon= 2.4 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.07

0.08

t_r

Turn-off delay time, inductive load

Fall time, inductive load

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Goff= 5.1 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.94

1.05

t_{d off}

I_C= 450 A, V_CE= 400 V

V_GE= -8 V / +15 V

R_Goff= 5.1 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

0.04

0.05

0.06

t_f

Turn-on energy loss per pulse

I_C= 450 A, V_CE= 400 V, L_S= 20 nH

V_GE= -8 V / +15 V

R_Gon= 2.4 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

13.5

17.5

18.0

E_on

di/dt (T_vj25°C) = 5500 A/µs

di/dt (T_vj150°C) = 5000 A/µs

Turn-off energy loss per pulse

I_C= 450 A, V_CE= 400 V, L_S= 20 nH

V_GE= -8 V / +15 V

R_Goff= 5.1 Ω

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

23.5

29.0

30.0

E_off

dv/dt (T_vj25°C) = 3100 V/µs

dv/dt (T_vj150°C) = 2500 V/µs

SC data

V_GE≤ 15 V, V_CC= 400 V

V_CEmax= V_CES-L_sCE·di/dt

t_P≤ 6 µs, T_vj= 25°C

t_P≤ 3 µs, T_vj= 175°C

4800

3900

I_SC

Thermal resistance, junction to case

Thermal resistance, case to heatsink

per IGBT

R_thJC

R_thCH

0.080 0.095 K/W

0.050²⁾

K/W

°C

λ_Paste= 1 W/(m·K)

λ_grease= 1 W/(m·K)

Temperature under switching conditions

t_opcontinuous

-40

150

150³⁾

175

for 10s within a period of 30s, occurence maximum 3000

times over lifetime

T_{vj op}

¹⁾Verified by characterization / design not by test.

²⁾cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W

³⁾For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Diode, Inverter

3.1 Maximum Rated Values

Parameter

Conditions

Symbol

V_RRM

I_FN

Value

750

Unit

Repetitive peak reverse voltage

Implemented forward current

Continuous DC forward current

Repetitive peak forward current

I²t - value

T_vj= 25°C

660

I_F

450¹⁾

t_P= 1 ms

I_FRM

1320

V_R= 0 V, t_P= 10 ms, T_vj= 150°C

V_R= 0 V, t_P= 10 ms, T_vj= 175°C

19000

16000

A²s

I²t

3.2 Characteristic Values

min. typ. max.

Forward voltage

I_F= 450 A, V_GE= 0 V

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

1.45 1.65

1.30

1.25

V_F

I_F= 660 A, V_GE= 0 V

T_vj= 25°C

T_vj= 175°C

1.60

1.45

Peak reverse recovery current

Recovered charge

I_F= 450 A, - di_F/dt = 5000 A/µs (T_vj= 150°C) T_vj= 25°C

250

350

370

V_R= 400 V

V_GE= -8 V

T_vj= 150°C

T_vj= 175°C

I_RM

I_F= 450 A, - di_F/dt = 5000 A/µs (T_vj= 150°C) T_vj= 25°C

20.0

40.0

45.0

V_R= 400 V

V_GE= -8 V

T_vj= 150°C

T_vj= 175°C

Q_r

µC

Reverse recovery energy

I_F= 450 A, - di_F/dt = 5000 A/µs (T_vj= 150°C) T_vj= 25°C

7.00

13.0

15.0

V_R= 400 V

V_GE= -8 V

T_vj= 150°C

T_vj= 175°C

E_rec

Thermal resistance, junction to case

Thermal resistance, case to heatsink

per diode

R_thJC

R_thCH

0.125 0.150 K/W

per diode

λ_Paste= 1 W/(m·K)

0.050²⁾

K/W

°C

λ_grease= 1 W/(m·K)

Temperature under switching conditions

t_opcontinuous

-40

150

150³⁾

175

for 10s within a period of 30s, occurence maximum 3000

times over lifetime

T_{vj op}

NTC-Thermistor

min. typ. max.

Parameter

Conditions

Symbol

R₂₅

Value

Unit

kΩ

Rated resistance

Deviation of R100

Power dissipation

B-value

T_C= 25°C

5.00

T_C= 100°C, R₁₀₀= 493 Ω

T_C= 25°C

∆R/R

P₂₅

20.0 mW

R₂= R₂₅exp [B_25/50(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/80(1/T₂- 1/(298,15 K))]

R₂= R₂₅exp [B_25/100(1/T₂- 1/(298,15 K))]

B_25/50

B_25/80

B_25/100

3375

3411

3433

B-value

Specification according to the valid application note.

¹⁾Verified by characterization / design not by test.

²⁾cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W

³⁾For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Module

Parameter

Conditions

Symbol

Value

Unit

Isolation test voltage

RMS, f = 0 Hz, t = 1 sec

V_ISOL

4.2

Maximum RMS module terminal current

T_F= 75°C, T_Ct= 105°C

T_C= 85°C, T_Ct= 105°C

500

I_tRMS

Material of module baseplate

Internal isolation

Cu+Ni¹⁾

basic insulation (class 1, IEC 61140)

Al₂O₃

Creepage distance

terminal to heatsink

terminal to terminal

9.0

d_Creep

Clearance

terminal to heatsink

terminal to terminal

4.5

d_Clear

CTI

Comperative tracking index

Maximum pressure in cooling circuit

> 200

min. typ. max.

T_baseplate< 40°C

T_baseplate> 40°C

(relative pressure)

3.0³⁾

2.5

bar

Stray inductance module

L_sCE

R_CC'+EE'

T_stg

8.0

mΩ

°C

Module lead resistance, terminals - chip

Storage temperature

T_C= 25 °C, per switch

0.75

-40

125

Mounting torque for modul mounting

Screw M4 baseplate to heatsink

Screw EJOT Delta PCB to frame

1.80 2.00 2.20

0.45 0.50 0.55⁴⁾

Weight

600

¹⁾Ni plated Cu baseplate.

²⁾Improved Al₂O₃ceramic.

³⁾According to application note AN-HPD-ASSEMBLY

⁴⁾EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Characteristics Diagrams

output characteristic IGBT,Inverter (typical)

I_C= f (V_CE

output characteristic IGBT,Inverter (typical)

I_C= f (V_CE

)

V_GE= 15 V

T_vj= 150°C

1300

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

V_GE= 19V

V_GE= 17V

V_GE= 15V

V_GE= 13V

V_GE= 11V

V_GE= 9V

1200

1100

1000

900

800

700

600

500

400

300

200

100

1200

1100

1000

900

800

700

600

500

400

300

200

100

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2

0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 3,2 3,6 4,0

V_CE[V]

transfer characteristic IGBT,Inverter (typical)

switching losses IGBT,Inverter (typical)

E_on= f (I_C), E_off= f (I_C),

I_C= f (V_GE

)

V_CE= 20 V

V_GE= +15 V / -8 V, R_Gon= 2.4 Ω, R_Goff= 5.1 Ω, V_CE= 400 V

1300

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

E_on, T_vj= 150°C

E_off, T_vj= 150°C

E_on, T_vj= 175°C

1200

1100

1000

900

800

700

600

500

400

300

200

100

E_off, T_vj= 175°C

100 200 300 400 500 600 700 800 900

V_GE[V]

I_C[A]

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

switching losses IGBT,Inverter (typical)

E_on= f (R_G), E_off= f (R_G),

transient thermal impedance IGBT,Inverter

Z_thJC= f (t)

V_GE= +15V / -8V, I_C= 450 A, V_CE= 400 V

thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K)

140

E_on, T_vj= 150°C

E_off, T_vj= 150°C

E_on, T_vj= 175°C

Z_thJC: IGBT

120

100

E_off, T_vj= 175°C

0,1

0,01

r_i[K/W]: 0,005 0,055 0,022 0,013

τ_i[s]:

0,001 0,03 0,25 1,5

0,001

10 12 14 16 18 20 22 24

0,01

0,1

t [s]

R_G[Ω]

reverse bias safe operating area IGBT,Inverter (RBSOA)

I_C= f (V_CE

capacity characteristic IGBT,Inverter (typical)

C = f(V_CE

)

V_GE= +15V / -8V, R_Goff= 5,1 Ω, T_vj= 175°C

V_GE= 0 V, T_vj= 25°C, f = 1MHz

1400

100

1300

1200

1100

1000

900

C_ies

C_oes

C_res

800

700

600

500

400

300

I_C, Modul

I_C, Chip

200

100

0,1

100

200

300

400

V_CE[V]

500

600

700

800

100

200

300

400

500

V_CE[V]

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

gate charge characteristic IGBT,Inverter (typical)

V_GE= f(Q_G)

maximum allowed collector-emitter voltage

V_CES= f(T_vj), verified by characterization / design not by test

V_CE= 400 V, I_C= 450 A, T_vj= 25°C

I_CES= 1 mA for T_vj≤ 25°C; I_CES= 30 mA for T_vj> 25°C

800

Q_G

V_CES

775

750

725

700

675

650

-3

-6

-9

-50 -25

75 100 125 150 175 200

T_vj[°C]

Q_G[µC]

forward characteristic of Diode, Inverter (typical)

I_F= f (V_F)

switching losses Diode, Inverter (typical)

E_rec= f (I_F),

R_Gon= 2.4 Ω, V_CE= 400 V

1300

T_vj= 25°C

T_vj= 150°C

T_vj= 175°C

E_rec, T_vj= 150°C

E_rec, T_vj= 175°C

1200

1100

1000

900

800

700

600

500

400

300

200

100

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2

100 200 300 400 500 600 700 800 900

I_F[A]

V_F[V]

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

switching losses Diode, Inverter (typical)

E_rec= f (R_G),

transient thermal impedance Diode, Inverter

Z_thJC= f (t)

I_F= 450 A, V_CE= 400 V

thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K)

E_rec, T_vj= 150°C

E_rec, T_vj= 175°C

Z_thJC: Diode

0,1

0,01

r_i[K/W]: 0,015 0,1 0,025 0,01

τ_i[s]:

0,001 0,03 0,25 1,5

0,001

10 12 14 16 18 20 22 24

0,01

0,1

t [s]

R_G[Ω]

NTC-Thermistor-temperature characteristic (typical)

R = f (T)

100000

R_typ

10000

1000

100

T_C[°C]

100

120

140

160

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Circuit diagram

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Package outlines

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Label Codes

9.1 Module Code

Code Format

Data Matrix

Encoding

ASCII Text

Symbol Size

Standard

16x16

IEC24720 and IEC16022

Code Content

Content

Digit

1 - 5

6 - 11

12 - 19

20 - 21

22 - 23

Example (below)

71549

142846

55054991

Module Serial Number

Module Material Number

Production Order Number

Datecode (Production Year)

Datecode (Production Week)

Example

71549142846550549911530

9.2 Packing Code

Code Format

Code128

Code Set A

34 digits

Encoding

Symbol Size

Standard

IEC8859-1

Code Content

Content

Identifier

Digit

2 - 9

12 - 19

21 - 25

28 - 31

33 - 34

Example (below)

95056609

2X0003E0

754389

1139

Backend Construction Number

Production Lot Number

Serial Number

Date Code

Box Quantity

Example

X950566091T2X0003E0S754389D1139Q15

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Revision History

Major changes since previous revision

Revision History

Reference

V2.0

Date

Description

2018-03-07

2018-11-28

2019-05-20

V2.1

Correction of pin designation in package outlines

V3.0

Final Data Sheet

V3.0, 2019-05-20

FS660R08A6P2FLB

HybridPACK™ Drive Module

Terms & Conditions of usage

Edition 2018-08-01

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any

examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon

Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office

(http://www.infineon.com)

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the

nearest Infineon Technologies Office.

These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life

support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact

your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review

product requirements and reliability testing.

Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class

III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they

fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Trademarks

Trademarks of Infineon Technologies AG

AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,

DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,

HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,

PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,

SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.

Other Trademarks

Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,

µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of

DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.

FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of

Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION

FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor

Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,

MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave

Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun

Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.

TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.

VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of

WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.

Last update

2011-11-11

Final Data Sheet

V3.0, 2019-05-20

w w w . i n f i n e o n . c o m

Published by Infineon Technologies AG

FS660R08A6P2FLB [INFINEON]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E